Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
A mechanically exfoliated monolayer graphene field-effect device encapsulated in multilayer hBN, transferred onto Si++/SiO2, etched into a rectangular channel, and contacted by edge gold electrodes. The paper highlights device D₃ as a representative measured device.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
A mechanically exfoliated monolayer graphene field-effect device encapsulated in multilayer hBN, transferred onto Si++/SiO2, etched into a rectangular channel, and contacted by edge gold electrodes. The paper highlights device D₃ as a representative measured device.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
A mechanically exfoliated monolayer graphene field-effect device encapsulated in multilayer hBN, transferred onto Si++/SiO2, etched into a rectangular channel, and contacted by edge gold electrodes. The paper highlights device D₃ as a representative measured device.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
A mechanically exfoliated monolayer graphene field-effect device encapsulated in multilayer hBN, transferred onto Si++/SiO2, etched into a rectangular channel, and contacted by edge gold electrodes. The paper highlights device D₃ as a representative measured device.
