Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
hBN-encapsulated twisted double bilayer graphene device prepared by standard cut-and-stack transfer, patterned into a Hall bar with metallic heater and topgate structure on SiO₂/Si backgate substrate; two devices with twist angles 1.660° (D₁) and 1.200° (D₂) are reported.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
hBN-encapsulated twisted double bilayer graphene device prepared by standard cut-and-stack transfer, patterned into a Hall bar with metallic heater and topgate structure on SiO₂/Si backgate substrate; two devices with twist angles 1.660° (D₁) and 1.200° (D₂) are reported.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
hBN-encapsulated twisted double bilayer graphene device prepared by standard cut-and-stack transfer, patterned into a Hall bar with metallic heater and topgate structure on SiO₂/Si backgate substrate; two devices with twist angles 1.660° (D₁) and 1.200° (D₂) are reported.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
hBN-encapsulated twisted double bilayer graphene device prepared by standard cut-and-stack transfer, patterned into a Hall bar with metallic heater and topgate structure on SiO₂/Si backgate substrate; two devices with twist angles 1.660° (D₁) and 1.200° (D₂) are reported.