Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

I. Limame; P. Ludewig; A. Koulas-Simos; C. C. Palekar; J. Donges; C.-W. Shih; K. Gaur; S. Tripathi; S. Rodt; W. Stolz; K. Volz; S. Reitzenstein

doi:10.48550/arXiv.2512.10073

Research paper

Experimental GrowthExperimental CharacterizationComputational MultiscaleOther Computational

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

I. Limame, P. Ludewig, A. Koulas-Simos, C. C. Palekar et al.

arXiv preprint·2025·arXiv:2512.10073

Research paper

Experimental GrowthExperimental CharacterizationComputational MultiscaleOther Computational

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

I. Limame, P. Ludewig, A. Koulas-Simos, C. C. Palekar et al.

arXiv preprint·2025·arXiv:2512.10073

Research paper

Experimental GrowthExperimental CharacterizationComputational MultiscaleOther Computational

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

I. Limame, P. Ludewig, A. Koulas-Simos, C. C. Palekar et al.

arXiv preprint·2025·arXiv:2512.10073

Research paper

Experimental GrowthExperimental CharacterizationComputational MultiscaleOther Computational

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

I. Limame, P. Ludewig, A. Koulas-Simos, C. C. Palekar et al.

arXiv preprint·2025·arXiv:2512.10073

Research paper

Experimental GrowthExperimental CharacterizationComputational MultiscaleOther Computational

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

I. Limame, P. Ludewig, A. Koulas-Simos, C. C. Palekar et al.

arXiv preprint·2025·arXiv:2512.10073

Research paper

Experimental GrowthExperimental CharacterizationComputational MultiscaleOther Computational

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

I. Limame, P. Ludewig, A. Koulas-Simos, C. C. Palekar et al.

arXiv preprint·2025·arXiv:2512.10073

Research paper

Experimental GrowthExperimental CharacterizationComputational MultiscaleOther Computational

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

I. Limame, P. Ludewig, A. Koulas-Simos, C. C. Palekar et al.

arXiv preprint·2025·arXiv:2512.10073

Research paper

Experimental GrowthExperimental CharacterizationComputational MultiscaleOther Computational

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

I. Limame, P. Ludewig, A. Koulas-Simos, C. C. Palekar et al.

arXiv preprint·2025·arXiv:2512.10073

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

6 preparations6 characterizations22 properties5 figures

ExperimentalInGaAsStudied MaterialGaAsStudied MaterialGaPStudied MaterialAl0.90Ga0.10AsStudied MaterialSiSubstrate / DielectricIn0.5Ga0.5AsStudied MaterialIn0.23Ga0.77AsStudied Material

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

6 preparations6 characterizations22 properties5 figures

ExperimentalInGaAsStudied MaterialGaAsStudied MaterialGaPStudied MaterialAl0.90Ga0.10AsStudied MaterialSiSubstrate / DielectricIn0.5Ga0.5AsStudied MaterialIn0.23Ga0.77AsStudied Material

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

6 preparations6 characterizations22 properties5 figures

ExperimentalInGaAsStudied MaterialGaAsStudied MaterialGaPStudied MaterialAl0.90Ga0.10AsStudied MaterialSiSubstrate / DielectricIn0.5Ga0.5AsStudied MaterialIn0.23Ga0.77AsStudied Material

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

6 preparations6 characterizations22 properties5 figures

ExperimentalInGaAsStudied MaterialGaAsStudied MaterialGaPStudied MaterialAl0.90Ga0.10AsStudied MaterialSiSubstrate / DielectricIn0.5Ga0.5AsStudied MaterialIn0.23Ga0.77AsStudied Material

Type	Label	Value	Material	Sample	Source
Emitter Offset	QD offset from mesa center	20nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Quantum Dot Density	QD density	1–5×10^9cm⁻²	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Photon Extraction Efficiency	experimental PEE	40%	InGaAs GaAs GaP Al0.90Ga0.10As Si	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Photon Extraction Efficiency	simulated PEE	43%	InGaAs GaAs GaP Al0.90Ga0.10As Si	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Photon Extraction Efficiency	simulated maximum PEE	64%	InGaAs GaAs GaP Al0.90Ga0.10As Si	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Raman Peak	fine-structure splitting	34.2µeV	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
PL Peak	X	0.9369eV	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
PL Peak	XX	0.9346eV	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Pl Peak Intensity	X	P^0.78	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Pl Peak Intensity	XX	P^1.31	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Single Photon Purity	low excitation power	99.3%	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Single Photon Purity	at saturation	82.8%	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Single Photon Purity	77 K operation	88%	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Radiative Lifetime	exciton lifetime	987ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	126ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	800ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	800ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	61ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Mean	x-coordinate mismatch mean	-17nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Mean	y-coordinate mismatch mean	-19nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Spread	x-coordinate mismatch spread	46nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Spread	y-coordinate mismatch spread	41nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—

Type	Label	Value	Material	Sample	Source
Emitter Offset	QD offset from mesa center	20nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Quantum Dot Density	QD density	1–5×10^9cm⁻²	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Photon Extraction Efficiency	experimental PEE	40%	InGaAs GaAs GaP Al0.90Ga0.10As Si	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Photon Extraction Efficiency	simulated PEE	43%	InGaAs GaAs GaP Al0.90Ga0.10As Si	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Photon Extraction Efficiency	simulated maximum PEE	64%	InGaAs GaAs GaP Al0.90Ga0.10As Si	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Raman Peak	fine-structure splitting	34.2µeV	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
PL Peak	X	0.9369eV	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
PL Peak	XX	0.9346eV	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Pl Peak Intensity	X	P^0.78	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Pl Peak Intensity	XX	P^1.31	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Single Photon Purity	low excitation power	99.3%	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Single Photon Purity	at saturation	82.8%	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Single Photon Purity	77 K operation	88%	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Radiative Lifetime	exciton lifetime	987ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	126ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	800ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	800ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	61ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Mean	x-coordinate mismatch mean	-17nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Mean	y-coordinate mismatch mean	-19nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Spread	x-coordinate mismatch spread	46nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Spread	y-coordinate mismatch spread	41nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—

Type	Label	Value	Material	Sample	Source
Emitter Offset	QD offset from mesa center	20nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Quantum Dot Density	QD density	1–5×10^9cm⁻²	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Photon Extraction Efficiency	experimental PEE	40%	InGaAs GaAs GaP Al0.90Ga0.10As Si	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Photon Extraction Efficiency	simulated PEE	43%	InGaAs GaAs GaP Al0.90Ga0.10As Si	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Photon Extraction Efficiency	simulated maximum PEE	64%	InGaAs GaAs GaP Al0.90Ga0.10As Si	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Raman Peak	fine-structure splitting	34.2µeV	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
PL Peak	X	0.9369eV	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
PL Peak	XX	0.9346eV	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Pl Peak Intensity	X	P^0.78	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Pl Peak Intensity	XX	P^1.31	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Single Photon Purity	low excitation power	99.3%	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Single Photon Purity	at saturation	82.8%	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Single Photon Purity	77 K operation	88%	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Radiative Lifetime	exciton lifetime	987ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	126ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	800ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	800ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	61ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Mean	x-coordinate mismatch mean	-17nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Mean	y-coordinate mismatch mean	-19nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Spread	x-coordinate mismatch spread	46nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Spread	y-coordinate mismatch spread	41nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—

Type	Label	Value	Material	Sample	Source
Emitter Offset	QD offset from mesa center	20nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Quantum Dot Density	QD density	1–5×10^9cm⁻²	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Photon Extraction Efficiency	experimental PEE	40%	InGaAs GaAs GaP Al0.90Ga0.10As Si	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Photon Extraction Efficiency	simulated PEE	43%	InGaAs GaAs GaP Al0.90Ga0.10As Si	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Photon Extraction Efficiency	simulated maximum PEE	64%	InGaAs GaAs GaP Al0.90Ga0.10As Si	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Raman Peak	fine-structure splitting	34.2µeV	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
PL Peak	X	0.9369eV	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
PL Peak	XX	0.9346eV	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Pl Peak Intensity	X	P^0.78	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Pl Peak Intensity	XX	P^1.31	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Single Photon Purity	low excitation power	99.3%	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Single Photon Purity	at saturation	82.8%	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Single Photon Purity	77 K operation	88%	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Radiative Lifetime	exciton lifetime	987ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	126ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	800ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	800ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Rise Time	carrier rise time	61ps	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Mean	x-coordinate mismatch mean	-17nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Mean	y-coordinate mismatch mean	-19nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Spread	x-coordinate mismatch spread	46nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—
Offset Distribution Spread	y-coordinate mismatch spread	41nm	InGaAs	Directly epitaxially grown InGaAs/GaAs quantum-dot heterostr	—

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Samples

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

Materials

Growth

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

Materials

Growth

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

Materials

Growth

Processing

Characterization

Properties

Simulations

Why these are connected

Samples

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

Materials

Growth

Processing

Characterization

Properties

Simulations

Why these are connected