Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

I. Limame; P. Ludewig; A. Koulas-Simos; C. C. Palekar; J. Donges; C.-W. Shih; K. Gaur; S. Tripathi; S. Rodt; W. Stolz; K. Volz; S. Reitzenstein

doi:10.48550/arXiv.2512.10073

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Experimental GrowthExperimental CharacterizationComputational MultiscaleOther Computational

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

I. Limame, P. Ludewig, A. Koulas-Simos, C. C. Palekar et al.

arXiv preprint·2025·arXiv:2512.10073

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

6 preparations6 characterizations22 properties5 figures

ExperimentalInGaAsStudied MaterialGaAsStudied MaterialGaPStudied MaterialAl0.90Ga0.10AsStudied MaterialSiSubstrate / DielectricIn0.5Ga0.5AsStudied MaterialIn0.23Ga0.77AsStudied Material

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate | Matter42 Literature

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Samples

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Samples

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Samples

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Samples

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Samples

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Samples

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Samples

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

Samples

Directly epitaxially grown InGaAs/GaAs quantum-dot heterostructure on Si(001) with GaP-based buffer/template and backside DBR, subsequently patterned into a circular Bragg grating resonator device by in-situ electron-beam lithography.

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