High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Spin properties in droplet epitaxy-grown telecom quantum dots

Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors

Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band

Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy

Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN

Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)

Excited-State Trions in a Quantum Well

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Spin properties in droplet epitaxy-grown telecom quantum dots

Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors

Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band

Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy

Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN

Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)

Excited-State Trions in a Quantum Well

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Spin properties in droplet epitaxy-grown telecom quantum dots

Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors

Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band

Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy

Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN

Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)

Excited-State Trions in a Quantum Well

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Spin properties in droplet epitaxy-grown telecom quantum dots

Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors

Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band

Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy

Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN

Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)

Excited-State Trions in a Quantum Well