Patent
US 10,775,651DOUBLE-LAYER GRAPHENE OPTICAL MODULATORS AND METHODS OF FABRICATION THEREOF
Hamed Dalir, Yang Xia, Yuan Wang, Xiang Zhang
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,775,651Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows an example of a flow diagram illustrating a manufacturing process for a double-layer graphene modulator.
Figures 2A-2E show examples of schematic illustrations of a double-layer graphene modulator at various stages in the manufacturing process.
Figure 3 shows an example of a cross-sectional schematic illustration of a double- layer graphene modulator.
Figure 4 shows an example of the schematic illustration of a double-layer graphene modulator.
Figure 5 shows the radio frequency response of the device. The 3 dB cut-off frequency of 35 GHz was obtained with an RF power of -7 dBm biased at V D C = 25 V.
Figure 6 shows the athermal operation of the graphene modulator under a large temperature range.
Figure 7A shows the static result of a planar double-layer graphene modulator. A modulation depth of-2 dB was achieved on a 30 p m long device with a swing voltage of 25 V at the standard optical wavelength of 1.55 pm.
Figure 7 B shows the uniform modulation depth of the device across the full measured wavelength range from 1500 nm to 1640 nm covering the entire optical communication region (1525-1565 nm (C band) and 1570-1610 nm (L band)) observed with a fixed swing voltage. Such a broadband functionality in a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a substrate; a first electrically insulating material disposed over the substrate; a first graphene layer and a second graphene layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, a thickness of the first electrically insulating material between the first graphene layer and the second g raphene layer being 120 nanometers, at least a portion of the second graphene layer overlaying at least a portion of the first graphene layer; and a waveguide disposed on the first electrically insulating material, the waveguide overlaying both the first graphene layer and the second graphene layer. Currently amended
The device of claim 1, wherein the first graphene layer and the second graphene layer each consist of a single layer of carbon atoms. Original
(Ori g inal) The device of claim 1, further comprising a first electrode in contact with the first g raphene layer; and a second electrode in contact with the second graphene layer. Original
The device of claim 1, wherein the first electrically insulating material comprises A₁ 2 0 3. Original
The device of claim 1, wherein a thickness of the first electrically insulating material between the substrate and the first graphene layer is about 10 nanometers to 20 nanometers. Original
The device of claim 1, wherein the first graphene layer and the second graphene layer are substantially parallel to each other. Original
The device of claim 1, wherein a width of the waveguide is substantially parallel to the first graphene layer and the second graphene layer. Original
The device of claim 1, wherein the waveguide comprises a material selected from a group consisting of silicon, silicon nitride, a chalcogenide glass, and a polymer. Original
The device of claim 1, wherein a width of the waveguide is about 100 nanometers to microns, wherein a height of the waveguide is about 100 nanometers to 10 microns, and wherein a length of the waveguide is about 1 micron to 1 millimeter. Original
The device of claim 1, wherein the substrate comprises an insulating material. Original
The device of claim 1, wherein the substrate comprises a material selected from a group consisting of an oxide, a nitride, and a polymer film. Original
The device of claim 1, wherein the substrate has a lower index of refraction than the waveguide. Original
Canceled
Canceled
A device comprising: a substrate; a first electrically insulating material disposed over the substrate; a first 2-D semiconductor layer and a second 2-D semiconductor layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, a thickness of the first electrically insulating material between the first 2-D semiconductor layer and the second 2-D semiconductor layer being 120 nanometers, at least a portion of the second 2-D semiconductor layer overlaying at least a portion of the first 2-D semiconductor layer; and a waveguide disposed on the first electrically insulating material, the waveguide overlaying both the first 2-D semiconductor layer and the second 2-D semiconductor layer. Currently amended
The device of claim 16, wherein the first and the second 2-D semiconductor layers are selected from a group consisting of molybdenum disilicide, black phosphorine, and graphene. Original
(Withdrawn, Currently Amended) A method comprising: (a) depositing a first electrically insulating material over a substrate; (b) depositing a first graphene layer on the first electrically insulating material; (c) depositing a first electrode on a portion of the first graphene layer; (d) depositing the first electrically insulating material on the first graphene layer; (e) after operation (d), depositing a second graphene layer on the first electrically insulating material; (f) depositing a second electrode on a portion of the second graphene layer; (g) depositing the first electrically insulating material on the second graphene layer; and (h) after operation (g), forming a waveguide on the first electrically insulating material, a resulting device comprising: the substrate; the first electrically insulating material disposed over the substrate; the first graphene layer and the second graphene layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, a thickness of the first electrically insulating material between the first graphene layer and the second graphene layer being 120 nanometers, at least a portion of the second graphene layer overlaying at least a portion of the first graphene layer; and the waveguide disposed on the first electrically insulating material, the waveguide overlaying both the first graphene layer and the second graphene layer. Currently amended
The method of claim 18, further comprising: after operation (h), annealing the substrate and the depositions thereon at about 200 ° C to 500 ° C for about 5 minutes to 15 minutes. Withdrawn
The method of claim 18, wherein the waveguide overlays both the first graphene layer and the second graphene layer. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
double-layer graphene optical modulator
Materials described outside the worked examples.
graphene
C
first electrically insulating material
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Modulation Speed Ghz | 35 GHz | — |
Modulation Depth Db | 2 dB |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,775,651Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows an example of a flow diagram illustrating a manufacturing process for a double-layer graphene modulator.
Figures 2A-2E show examples of schematic illustrations of a double-layer graphene modulator at various stages in the manufacturing process.
Figure 3 shows an example of a cross-sectional schematic illustration of a double- layer graphene modulator.
Figure 4 shows an example of the schematic illustration of a double-layer graphene modulator.
Figure 5 shows the radio frequency response of the device. The 3 dB cut-off frequency of 35 GHz was obtained with an RF power of -7 dBm biased at V D C = 25 V.
Figure 6 shows the athermal operation of the graphene modulator under a large temperature range.
Figure 7A shows the static result of a planar double-layer graphene modulator. A modulation depth of-2 dB was achieved on a 30 p m long device with a swing voltage of 25 V at the standard optical wavelength of 1.55 pm.
Figure 7 B shows the uniform modulation depth of the device across the full measured wavelength range from 1500 nm to 1640 nm covering the entire optical communication region (1525-1565 nm (C band) and 1570-1610 nm (L band)) observed with a fixed swing voltage. Such a broadband functionality in a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a substrate; a first electrically insulating material disposed over the substrate; a first graphene layer and a second graphene layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, a thickness of the first electrically insulating material between the first graphene layer and the second g raphene layer being 120 nanometers, at least a portion of the second graphene layer overlaying at least a portion of the first graphene layer; and a waveguide disposed on the first electrically insulating material, the waveguide overlaying both the first graphene layer and the second graphene layer. Currently amended
The device of claim 1, wherein the first graphene layer and the second graphene layer each consist of a single layer of carbon atoms. Original
(Ori g inal) The device of claim 1, further comprising a first electrode in contact with the first g raphene layer; and a second electrode in contact with the second graphene layer. Original
The device of claim 1, wherein the first electrically insulating material comprises A₁ 2 0 3. Original
The device of claim 1, wherein a thickness of the first electrically insulating material between the substrate and the first graphene layer is about 10 nanometers to 20 nanometers. Original
The device of claim 1, wherein the first graphene layer and the second graphene layer are substantially parallel to each other. Original
The device of claim 1, wherein a width of the waveguide is substantially parallel to the first graphene layer and the second graphene layer. Original
The device of claim 1, wherein the waveguide comprises a material selected from a group consisting of silicon, silicon nitride, a chalcogenide glass, and a polymer. Original
The device of claim 1, wherein a width of the waveguide is about 100 nanometers to microns, wherein a height of the waveguide is about 100 nanometers to 10 microns, and wherein a length of the waveguide is about 1 micron to 1 millimeter. Original
The device of claim 1, wherein the substrate comprises an insulating material. Original
The device of claim 1, wherein the substrate comprises a material selected from a group consisting of an oxide, a nitride, and a polymer film. Original
The device of claim 1, wherein the substrate has a lower index of refraction than the waveguide. Original
Canceled
Canceled
A device comprising: a substrate; a first electrically insulating material disposed over the substrate; a first 2-D semiconductor layer and a second 2-D semiconductor layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, a thickness of the first electrically insulating material between the first 2-D semiconductor layer and the second 2-D semiconductor layer being 120 nanometers, at least a portion of the second 2-D semiconductor layer overlaying at least a portion of the first 2-D semiconductor layer; and a waveguide disposed on the first electrically insulating material, the waveguide overlaying both the first 2-D semiconductor layer and the second 2-D semiconductor layer. Currently amended
The device of claim 16, wherein the first and the second 2-D semiconductor layers are selected from a group consisting of molybdenum disilicide, black phosphorine, and graphene. Original
(Withdrawn, Currently Amended) A method comprising: (a) depositing a first electrically insulating material over a substrate; (b) depositing a first graphene layer on the first electrically insulating material; (c) depositing a first electrode on a portion of the first graphene layer; (d) depositing the first electrically insulating material on the first graphene layer; (e) after operation (d), depositing a second graphene layer on the first electrically insulating material; (f) depositing a second electrode on a portion of the second graphene layer; (g) depositing the first electrically insulating material on the second graphene layer; and (h) after operation (g), forming a waveguide on the first electrically insulating material, a resulting device comprising: the substrate; the first electrically insulating material disposed over the substrate; the first graphene layer and the second graphene layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, a thickness of the first electrically insulating material between the first graphene layer and the second graphene layer being 120 nanometers, at least a portion of the second graphene layer overlaying at least a portion of the first graphene layer; and the waveguide disposed on the first electrically insulating material, the waveguide overlaying both the first graphene layer and the second graphene layer. Currently amended
The method of claim 18, further comprising: after operation (h), annealing the substrate and the depositions thereon at about 200 ° C to 500 ° C for about 5 minutes to 15 minutes. Withdrawn
The method of claim 18, wherein the waveguide overlays both the first graphene layer and the second graphene layer. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
double-layer graphene optical modulator
Materials described outside the worked examples.
graphene
C
first electrically insulating material
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Modulation Speed Ghz | 35 GHz | — |
Modulation Depth Db | 2 dB |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,775,651Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows an example of a flow diagram illustrating a manufacturing process for a double-layer graphene modulator.
Figures 2A-2E show examples of schematic illustrations of a double-layer graphene modulator at various stages in the manufacturing process.
Figure 3 shows an example of a cross-sectional schematic illustration of a double- layer graphene modulator.
Figure 4 shows an example of the schematic illustration of a double-layer graphene modulator.
Figure 5 shows the radio frequency response of the device. The 3 dB cut-off frequency of 35 GHz was obtained with an RF power of -7 dBm biased at V D C = 25 V.
Figure 6 shows the athermal operation of the graphene modulator under a large temperature range.
Figure 7A shows the static result of a planar double-layer graphene modulator. A modulation depth of-2 dB was achieved on a 30 p m long device with a swing voltage of 25 V at the standard optical wavelength of 1.55 pm.
Figure 7 B shows the uniform modulation depth of the device across the full measured wavelength range from 1500 nm to 1640 nm covering the entire optical communication region (1525-1565 nm (C band) and 1570-1610 nm (L band)) observed with a fixed swing voltage. Such a broadband functionality in a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a substrate; a first electrically insulating material disposed over the substrate; a first graphene layer and a second graphene layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, a thickness of the first electrically insulating material between the first graphene layer and the second g raphene layer being 120 nanometers, at least a portion of the second graphene layer overlaying at least a portion of the first graphene layer; and a waveguide disposed on the first electrically insulating material, the waveguide overlaying both the first graphene layer and the second graphene layer. Currently amended
The device of claim 1, wherein the first graphene layer and the second graphene layer each consist of a single layer of carbon atoms. Original
(Ori g inal) The device of claim 1, further comprising a first electrode in contact with the first g raphene layer; and a second electrode in contact with the second graphene layer. Original
The device of claim 1, wherein the first electrically insulating material comprises A₁ 2 0 3. Original
The device of claim 1, wherein a thickness of the first electrically insulating material between the substrate and the first graphene layer is about 10 nanometers to 20 nanometers. Original
The device of claim 1, wherein the first graphene layer and the second graphene layer are substantially parallel to each other. Original
The device of claim 1, wherein a width of the waveguide is substantially parallel to the first graphene layer and the second graphene layer. Original
The device of claim 1, wherein the waveguide comprises a material selected from a group consisting of silicon, silicon nitride, a chalcogenide glass, and a polymer. Original
The device of claim 1, wherein a width of the waveguide is about 100 nanometers to microns, wherein a height of the waveguide is about 100 nanometers to 10 microns, and wherein a length of the waveguide is about 1 micron to 1 millimeter. Original
The device of claim 1, wherein the substrate comprises an insulating material. Original
The device of claim 1, wherein the substrate comprises a material selected from a group consisting of an oxide, a nitride, and a polymer film. Original
The device of claim 1, wherein the substrate has a lower index of refraction than the waveguide. Original
Canceled
Canceled
A device comprising: a substrate; a first electrically insulating material disposed over the substrate; a first 2-D semiconductor layer and a second 2-D semiconductor layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, a thickness of the first electrically insulating material between the first 2-D semiconductor layer and the second 2-D semiconductor layer being 120 nanometers, at least a portion of the second 2-D semiconductor layer overlaying at least a portion of the first 2-D semiconductor layer; and a waveguide disposed on the first electrically insulating material, the waveguide overlaying both the first 2-D semiconductor layer and the second 2-D semiconductor layer. Currently amended
The device of claim 16, wherein the first and the second 2-D semiconductor layers are selected from a group consisting of molybdenum disilicide, black phosphorine, and graphene. Original
(Withdrawn, Currently Amended) A method comprising: (a) depositing a first electrically insulating material over a substrate; (b) depositing a first graphene layer on the first electrically insulating material; (c) depositing a first electrode on a portion of the first graphene layer; (d) depositing the first electrically insulating material on the first graphene layer; (e) after operation (d), depositing a second graphene layer on the first electrically insulating material; (f) depositing a second electrode on a portion of the second graphene layer; (g) depositing the first electrically insulating material on the second graphene layer; and (h) after operation (g), forming a waveguide on the first electrically insulating material, a resulting device comprising: the substrate; the first electrically insulating material disposed over the substrate; the first graphene layer and the second graphene layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, a thickness of the first electrically insulating material between the first graphene layer and the second graphene layer being 120 nanometers, at least a portion of the second graphene layer overlaying at least a portion of the first graphene layer; and the waveguide disposed on the first electrically insulating material, the waveguide overlaying both the first graphene layer and the second graphene layer. Currently amended
The method of claim 18, further comprising: after operation (h), annealing the substrate and the depositions thereon at about 200 ° C to 500 ° C for about 5 minutes to 15 minutes. Withdrawn
The method of claim 18, wherein the waveguide overlays both the first graphene layer and the second graphene layer. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
double-layer graphene optical modulator
Materials described outside the worked examples.
graphene
C
first electrically insulating material
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Modulation Speed Ghz | 35 GHz | — |
Modulation Depth Db | 2 dB |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,775,651Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows an example of a flow diagram illustrating a manufacturing process for a double-layer graphene modulator.
Figures 2A-2E show examples of schematic illustrations of a double-layer graphene modulator at various stages in the manufacturing process.
Figure 3 shows an example of a cross-sectional schematic illustration of a double- layer graphene modulator.
Figure 4 shows an example of the schematic illustration of a double-layer graphene modulator.
Figure 5 shows the radio frequency response of the device. The 3 dB cut-off frequency of 35 GHz was obtained with an RF power of -7 dBm biased at V D C = 25 V.
Figure 6 shows the athermal operation of the graphene modulator under a large temperature range.
Figure 7A shows the static result of a planar double-layer graphene modulator. A modulation depth of-2 dB was achieved on a 30 p m long device with a swing voltage of 25 V at the standard optical wavelength of 1.55 pm.
Figure 7 B shows the uniform modulation depth of the device across the full measured wavelength range from 1500 nm to 1640 nm covering the entire optical communication region (1525-1565 nm (C band) and 1570-1610 nm (L band)) observed with a fixed swing voltage. Such a broadband functionality in a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising: a substrate; a first electrically insulating material disposed over the substrate; a first graphene layer and a second graphene layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, a thickness of the first electrically insulating material between the first graphene layer and the second g raphene layer being 120 nanometers, at least a portion of the second graphene layer overlaying at least a portion of the first graphene layer; and a waveguide disposed on the first electrically insulating material, the waveguide overlaying both the first graphene layer and the second graphene layer. Currently amended
The device of claim 1, wherein the first graphene layer and the second graphene layer each consist of a single layer of carbon atoms. Original
(Ori g inal) The device of claim 1, further comprising a first electrode in contact with the first g raphene layer; and a second electrode in contact with the second graphene layer. Original
The device of claim 1, wherein the first electrically insulating material comprises A₁ 2 0 3. Original
The device of claim 1, wherein a thickness of the first electrically insulating material between the substrate and the first graphene layer is about 10 nanometers to 20 nanometers. Original
The device of claim 1, wherein the first graphene layer and the second graphene layer are substantially parallel to each other. Original
The device of claim 1, wherein a width of the waveguide is substantially parallel to the first graphene layer and the second graphene layer. Original
The device of claim 1, wherein the waveguide comprises a material selected from a group consisting of silicon, silicon nitride, a chalcogenide glass, and a polymer. Original
The device of claim 1, wherein a width of the waveguide is about 100 nanometers to microns, wherein a height of the waveguide is about 100 nanometers to 10 microns, and wherein a length of the waveguide is about 1 micron to 1 millimeter. Original
The device of claim 1, wherein the substrate comprises an insulating material. Original
The device of claim 1, wherein the substrate comprises a material selected from a group consisting of an oxide, a nitride, and a polymer film. Original
The device of claim 1, wherein the substrate has a lower index of refraction than the waveguide. Original
Canceled
Canceled
A device comprising: a substrate; a first electrically insulating material disposed over the substrate; a first 2-D semiconductor layer and a second 2-D semiconductor layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, a thickness of the first electrically insulating material between the first 2-D semiconductor layer and the second 2-D semiconductor layer being 120 nanometers, at least a portion of the second 2-D semiconductor layer overlaying at least a portion of the first 2-D semiconductor layer; and a waveguide disposed on the first electrically insulating material, the waveguide overlaying both the first 2-D semiconductor layer and the second 2-D semiconductor layer. Currently amended
The device of claim 16, wherein the first and the second 2-D semiconductor layers are selected from a group consisting of molybdenum disilicide, black phosphorine, and graphene. Original
(Withdrawn, Currently Amended) A method comprising: (a) depositing a first electrically insulating material over a substrate; (b) depositing a first graphene layer on the first electrically insulating material; (c) depositing a first electrode on a portion of the first graphene layer; (d) depositing the first electrically insulating material on the first graphene layer; (e) after operation (d), depositing a second graphene layer on the first electrically insulating material; (f) depositing a second electrode on a portion of the second graphene layer; (g) depositing the first electrically insulating material on the second graphene layer; and (h) after operation (g), forming a waveguide on the first electrically insulating material, a resulting device comprising: the substrate; the first electrically insulating material disposed over the substrate; the first graphene layer and the second graphene layer disposed in the first electrically insulating material and being separated by the first electrically insulating material, a thickness of the first electrically insulating material between the first graphene layer and the second graphene layer being 120 nanometers, at least a portion of the second graphene layer overlaying at least a portion of the first graphene layer; and the waveguide disposed on the first electrically insulating material, the waveguide overlaying both the first graphene layer and the second graphene layer. Currently amended
The method of claim 18, further comprising: after operation (h), annealing the substrate and the depositions thereon at about 200 ° C to 500 ° C for about 5 minutes to 15 minutes. Withdrawn
The method of claim 18, wherein the waveguide overlays both the first graphene layer and the second graphene layer. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
double-layer graphene optical modulator
Materials described outside the worked examples.
graphene
C
first electrically insulating material
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Modulation Speed Ghz | 35 GHz | — |
Modulation Depth Db | 2 dB |
Related documents with shared materials, methods, properties, or citations.
double-layer 2-D semiconductor optical modulator
aluminum oxide
Al₂O₃
waveguide
metal electrode
waveguide material
substrate
2-D semiconductor layer
hafnium oxide
HfO₂
silicon dioxide
SiO₂
| — |
Optical Bandwidth Nm | — | — |
Thermal Operating Range C | — | — |
Duration | 30 seconds to 300 °C | — |
Temperature | 25–145 °C | — |
Thickness | 1500–1640 nm | — |
Thickness | 1–2 nm | — |
Duration | 5–15 minutes | — |
Thickness | 5–150 nm | — |
Thickness | 10–20 nm | — |
Thickness | 100–10000 nm | — |
Thickness | 1000–1000000 nm | — |
Thickness | ≥ 200000 cm | — |
Temperature | 200–500 °C | — |
double-layer 2-D semiconductor optical modulator
aluminum oxide
Al₂O₃
waveguide
metal electrode
waveguide material
substrate
2-D semiconductor layer
hafnium oxide
HfO₂
silicon dioxide
SiO₂
| — |
Optical Bandwidth Nm | — | — |
Thermal Operating Range C | — | — |
Duration | 30 seconds to 300 °C | — |
Temperature | 25–145 °C | — |
Thickness | 1500–1640 nm | — |
Thickness | 1–2 nm | — |
Duration | 5–15 minutes | — |
Thickness | 5–150 nm | — |
Thickness | 10–20 nm | — |
Thickness | 100–10000 nm | — |
Thickness | 1000–1000000 nm | — |
Thickness | ≥ 200000 cm | — |
Temperature | 200–500 °C | — |
double-layer 2-D semiconductor optical modulator
aluminum oxide
Al₂O₃
waveguide
metal electrode
waveguide material
substrate
2-D semiconductor layer
hafnium oxide
HfO₂
silicon dioxide
SiO₂
| — |
Optical Bandwidth Nm | — | — |
Thermal Operating Range C | — | — |
Duration | 30 seconds to 300 °C | — |
Temperature | 25–145 °C | — |
Thickness | 1500–1640 nm | — |
Thickness | 1–2 nm | — |
Duration | 5–15 minutes | — |
Thickness | 5–150 nm | — |
Thickness | 10–20 nm | — |
Thickness | 100–10000 nm | — |
Thickness | 1000–1000000 nm | — |
Thickness | ≥ 200000 cm | — |
Temperature | 200–500 °C | — |
double-layer 2-D semiconductor optical modulator
aluminum oxide
Al₂O₃
waveguide
metal electrode
waveguide material
substrate
2-D semiconductor layer
hafnium oxide
HfO₂
silicon dioxide
SiO₂
| — |
Optical Bandwidth Nm | — | — |
Thermal Operating Range C | — | — |
Duration | 30 seconds to 300 °C | — |
Temperature | 25–145 °C | — |
Thickness | 1500–1640 nm | — |
Thickness | 1–2 nm | — |
Duration | 5–15 minutes | — |
Thickness | 5–150 nm | — |
Thickness | 10–20 nm | — |
Thickness | 100–10000 nm | — |
Thickness | 1000–1000000 nm | — |
Thickness | ≥ 200000 cm | — |
Temperature | 200–500 °C | — |