Abstract

III-V semiconductor nanowire-based photodetectors have significant potential for remote sensing and LiDAR applications, particularly due to their ability to operate at 1.55 μm. Achieving room-temperature operation and near-unity absorption using these nanowires at 1.55 μm is crucial for single-photon detection, which offers a promising solution to the challenges posed by the existing superconducting nanowire single-photon detectors. Key materials suited for this wavelength include lattice-matched In0.53Ga0.47As and Ga0.5As0.5Sb to InP. This study reports a comparison between InGaAs and GaAsSb nanowires to achieve high absorption efficiency at room temperature. Through optimized nanowire arrangement and geometry, we aim to maximize absorption. Our approach features a comparative analysis of patterned InGaAs and GaAsSb nanowires with absorption characteristics modeled using finite-difference time-domain simulations to enhance absorption at the target wavelength. We also present the complete workflow for nanowire fabrication, modeling, and simulation, encompassing the production of tapered nanowire structures and measurement of their absorption efficiency. Our experimental results show that tapered InGaAs and GaAsSb nanowires exhibit an absorption efficiency of 93% and 92%, respectively, at room temperature around 1.55 μm.

Abstract

III-V semiconductor nanowire-based photodetectors have significant potential for remote sensing and LiDAR applications, particularly due to their ability to operate at 1.55 μm. Achieving room-temperature operation and near-unity absorption using these nanowires at 1.55 μm is crucial for single-photon detection, which offers a promising solution to the challenges posed by the existing superconducting nanowire single-photon detectors. Key materials suited for this wavelength include lattice-matched In0.53Ga0.47As and Ga0.5As0.5Sb to InP. This study reports a comparison between InGaAs and GaAsSb nanowires to achieve high absorption efficiency at room temperature. Through optimized nanowire arrangement and geometry, we aim to maximize absorption. Our approach features a comparative analysis of patterned InGaAs and GaAsSb nanowires with absorption characteristics modeled using finite-difference time-domain simulations to enhance absorption at the target wavelength. We also present the complete workflow for nanowire fabrication, modeling, and simulation, encompassing the production of tapered nanowire structures and measurement of their absorption efficiency. Our experimental results show that tapered InGaAs and GaAsSb nanowires exhibit an absorption efficiency of 93% and 92%, respectively, at room temperature around 1.55 μm.

Abstract

III-V semiconductor nanowire-based photodetectors have significant potential for remote sensing and LiDAR applications, particularly due to their ability to operate at 1.55 μm. Achieving room-temperature operation and near-unity absorption using these nanowires at 1.55 μm is crucial for single-photon detection, which offers a promising solution to the challenges posed by the existing superconducting nanowire single-photon detectors. Key materials suited for this wavelength include lattice-matched In0.53Ga0.47As and Ga0.5As0.5Sb to InP. This study reports a comparison between InGaAs and GaAsSb nanowires to achieve high absorption efficiency at room temperature. Through optimized nanowire arrangement and geometry, we aim to maximize absorption. Our approach features a comparative analysis of patterned InGaAs and GaAsSb nanowires with absorption characteristics modeled using finite-difference time-domain simulations to enhance absorption at the target wavelength. We also present the complete workflow for nanowire fabrication, modeling, and simulation, encompassing the production of tapered nanowire structures and measurement of their absorption efficiency. Our experimental results show that tapered InGaAs and GaAsSb nanowires exhibit an absorption efficiency of 93% and 92%, respectively, at room temperature around 1.55 μm.

Abstract

III-V semiconductor nanowire-based photodetectors have significant potential for remote sensing and LiDAR applications, particularly due to their ability to operate at 1.55 μm. Achieving room-temperature operation and near-unity absorption using these nanowires at 1.55 μm is crucial for single-photon detection, which offers a promising solution to the challenges posed by the existing superconducting nanowire single-photon detectors. Key materials suited for this wavelength include lattice-matched In0.53Ga0.47As and Ga0.5As0.5Sb to InP. This study reports a comparison between InGaAs and GaAsSb nanowires to achieve high absorption efficiency at room temperature. Through optimized nanowire arrangement and geometry, we aim to maximize absorption. Our approach features a comparative analysis of patterned InGaAs and GaAsSb nanowires with absorption characteristics modeled using finite-difference time-domain simulations to enhance absorption at the target wavelength. We also present the complete workflow for nanowire fabrication, modeling, and simulation, encompassing the production of tapered nanowire structures and measurement of their absorption efficiency. Our experimental results show that tapered InGaAs and GaAsSb nanowires exhibit an absorption efficiency of 93% and 92%, respectively, at room temperature around 1.55 μm.