Exciton-polaritons in GaAs-based slab waveguide photonic crystals

C. E. Whittaker; T. Isoniemi; S. Lovett; P. M. Walker; S. Kolodny; V. Kozin; I. V. Iorsh; I. Farrer; D. A. Ritchie; M. S. Skolnick; D. N. Krizhanovskii

doi:10.1038/s41467-018-03188-x

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational Multiscale

Exciton-polaritons in GaAs-based slab waveguide photonic crystals

C. E. Whittaker, T. Isoniemi, S. Lovett, P. M. Walker et al.

arXiv preprint·2023·10.1038/s41467-018-03188-x·arXiv:2308.15185

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

MBE-grown GaAs-based slab waveguide structure patterned into a square-lattice photonic crystal with etched holes and grating couplers; several fabricated devices varied lattice constant, hole diameter, and etch depth.

3 preparations2 characterizations5 properties2 figures

ExperimentalGaAs-based slab waveguide photonic crystal with embedded In0.06Ga0.94As quantum wellsStudied MaterialIn0.06Ga0.94AsStudied MaterialAl0.9Ga0.1AsSubstrate / DielectricGaAsSubstrate / Dielectric

Representative photonic crystal device used for angle-resolved photoluminescence measurements, with hole diameter 47 nm and etch depth 64 nm.

3 preparations3 characterizations1 property3 figures

ExperimentalGaAs-based slab waveguide photonic crystal with embedded In0.06Ga0.94As quantum wellsStudied Material

Materials

GaAs-based slab waveguide photonic crystal with embedded In0.06Ga0.94As quantum wells

Studied Material

Also known as

GaAs-based WG PhCpolariton waveguide PhC

Variables

embedded_qws= 3

photonic_crystal_geometry= square lattice

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Exciton-polaritons in GaAs-based slab waveguide photonic crystals | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Layer Thickness	waveguide core thickness	295nm	GaAs-based slab waveguide photonic crystal with embedded In0.06Ga0.94As quantum wells	MBE-grown GaAs-based slab waveguide structure patterned into		—
Layer Thickness	cladding thickness	750nm	Al0.9Ga0.1As	MBE-grown GaAs-based slab waveguide structure patterned into		—
Layer Thickness	quantum well thickness	10nm	In0.06Ga0.94As	MBE-grown GaAs-based slab waveguide structure patterned into		—
Layer Thickness	GaAs cap thickness	50nm	GaAs	MBE-grown GaAs-based slab waveguide structure patterned into		—
Photonic Band Gap Width	TE-like gap near X	10meV	GaAs-based slab waveguide photonic crystal with embedded In0.06Ga0.94As quantum wells	MBE-grown GaAs-based slab waveguide structure patterned into Representative photonic crystal device used for angle-resolv		—
PL Peak	regex-detected PL peak	637nm	—	—	—	—
Pl Peak Fwhm	PL peak	10meV	—	—	—	—
Pl Peak Fwhm	PL peak	16meV	—	—	—	—
Pl Peak Fwhm	PL peak	100meV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Layer Thickness	waveguide core thickness	295nm	GaAs-based slab waveguide photonic crystal with embedded In0.06Ga0.94As quantum wells	MBE-grown GaAs-based slab waveguide structure patterned into		—
Layer Thickness	cladding thickness	750nm	Al0.9Ga0.1As	MBE-grown GaAs-based slab waveguide structure patterned into		—
Layer Thickness	quantum well thickness	10nm	In0.06Ga0.94As	MBE-grown GaAs-based slab waveguide structure patterned into		—
Layer Thickness	GaAs cap thickness	50nm	GaAs	MBE-grown GaAs-based slab waveguide structure patterned into		—
Photonic Band Gap Width	TE-like gap near X	10meV	GaAs-based slab waveguide photonic crystal with embedded In0.06Ga0.94As quantum wells	MBE-grown GaAs-based slab waveguide structure patterned into Representative photonic crystal device used for angle-resolv		—
PL Peak	regex-detected PL peak	637nm	—	—	—	—
Pl Peak Fwhm	PL peak	10meV	—	—	—	—
Pl Peak Fwhm	PL peak	16meV	—	—	—	—
Pl Peak Fwhm	PL peak	100meV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Layer Thickness	waveguide core thickness	295nm	GaAs-based slab waveguide photonic crystal with embedded In0.06Ga0.94As quantum wells	MBE-grown GaAs-based slab waveguide structure patterned into		—
Layer Thickness	cladding thickness	750nm	Al0.9Ga0.1As	MBE-grown GaAs-based slab waveguide structure patterned into		—
Layer Thickness	quantum well thickness	10nm	In0.06Ga0.94As	MBE-grown GaAs-based slab waveguide structure patterned into		—
Layer Thickness	GaAs cap thickness	50nm	GaAs	MBE-grown GaAs-based slab waveguide structure patterned into		—
Photonic Band Gap Width	TE-like gap near X	10meV	GaAs-based slab waveguide photonic crystal with embedded In0.06Ga0.94As quantum wells	MBE-grown GaAs-based slab waveguide structure patterned into Representative photonic crystal device used for angle-resolv		—
PL Peak	regex-detected PL peak	637nm	—	—	—	—
Pl Peak Fwhm	PL peak	10meV	—	—	—	—
Pl Peak Fwhm	PL peak	16meV	—	—	—	—
Pl Peak Fwhm	PL peak	100meV	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Layer Thickness	waveguide core thickness	295nm	GaAs-based slab waveguide photonic crystal with embedded In0.06Ga0.94As quantum wells	MBE-grown GaAs-based slab waveguide structure patterned into		—
Layer Thickness	cladding thickness	750nm	Al0.9Ga0.1As	MBE-grown GaAs-based slab waveguide structure patterned into		—
Layer Thickness	quantum well thickness	10nm	In0.06Ga0.94As	MBE-grown GaAs-based slab waveguide structure patterned into		—
Layer Thickness	GaAs cap thickness	50nm	GaAs	MBE-grown GaAs-based slab waveguide structure patterned into		—
Photonic Band Gap Width	TE-like gap near X	10meV	GaAs-based slab waveguide photonic crystal with embedded In0.06Ga0.94As quantum wells	MBE-grown GaAs-based slab waveguide structure patterned into Representative photonic crystal device used for angle-resolv		—
PL Peak	regex-detected PL peak	637nm	—	—	—	—
Pl Peak Fwhm	PL peak	10meV	—	—	—	—
Pl Peak Fwhm	PL peak	16meV	—	—	—	—
Pl Peak Fwhm	PL peak	100meV	—	—	—	—

Exciton-polaritons in GaAs-based slab waveguide photonic crystals

Samples

MBE-grown GaAs-based slab waveguide structure patterned into a square-lattice photonic crystal with etched holes and grating couplers; several fabricated devices varied lattice constant, hole diameter, and etch depth.

Representative photonic crystal device used for angle-resolved photoluminescence measurements, with hole diameter 47 nm and etch depth 64 nm.

Materials

Why these are connected

Exciton-polaritons in GaAs-based slab waveguide photonic crystals

Samples

MBE-grown GaAs-based slab waveguide structure patterned into a square-lattice photonic crystal with etched holes and grating couplers; several fabricated devices varied lattice constant, hole diameter, and etch depth.

Representative photonic crystal device used for angle-resolved photoluminescence measurements, with hole diameter 47 nm and etch depth 64 nm.

Materials

Why these are connected

Exciton-polaritons in GaAs-based slab waveguide photonic crystals

Samples

MBE-grown GaAs-based slab waveguide structure patterned into a square-lattice photonic crystal with etched holes and grating couplers; several fabricated devices varied lattice constant, hole diameter, and etch depth.

Representative photonic crystal device used for angle-resolved photoluminescence measurements, with hole diameter 47 nm and etch depth 64 nm.

Materials

Why these are connected

Exciton-polaritons in GaAs-based slab waveguide photonic crystals

Samples

MBE-grown GaAs-based slab waveguide structure patterned into a square-lattice photonic crystal with etched holes and grating couplers; several fabricated devices varied lattice constant, hole diameter, and etch depth.

Representative photonic crystal device used for angle-resolved photoluminescence measurements, with hole diameter 47 nm and etch depth 64 nm.

Materials

Why these are connected

Exciton-polaritons in GaAs-based slab waveguide photonic crystals

Samples

MBE-grown GaAs-based slab waveguide structure patterned into a square-lattice photonic crystal with etched holes and grating couplers; several fabricated devices varied lattice constant, hole diameter, and etch depth.

Representative photonic crystal device used for angle-resolved photoluminescence measurements, with hole diameter 47 nm and etch depth 64 nm.

Materials

Why these are connected

Exciton-polaritons in GaAs-based slab waveguide photonic crystals

Samples

MBE-grown GaAs-based slab waveguide structure patterned into a square-lattice photonic crystal with etched holes and grating couplers; several fabricated devices varied lattice constant, hole diameter, and etch depth.

Representative photonic crystal device used for angle-resolved photoluminescence measurements, with hole diameter 47 nm and etch depth 64 nm.

Materials

Why these are connected

Exciton-polaritons in GaAs-based slab waveguide photonic crystals

Samples

MBE-grown GaAs-based slab waveguide structure patterned into a square-lattice photonic crystal with etched holes and grating couplers; several fabricated devices varied lattice constant, hole diameter, and etch depth.

Representative photonic crystal device used for angle-resolved photoluminescence measurements, with hole diameter 47 nm and etch depth 64 nm.

Materials

Why these are connected

Exciton-polaritons in GaAs-based slab waveguide photonic crystals

Samples

MBE-grown GaAs-based slab waveguide structure patterned into a square-lattice photonic crystal with etched holes and grating couplers; several fabricated devices varied lattice constant, hole diameter, and etch depth.

Representative photonic crystal device used for angle-resolved photoluminescence measurements, with hole diameter 47 nm and etch depth 64 nm.

Materials

Why these are connected

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