Exciton-polaritons in GaAs-based slab waveguide photonic crystals

C. E. Whittaker; T. Isoniemi; S. Lovett; P. M. Walker; S. Kolodny; V. Kozin; I. V. Iorsh; I. Farrer; D. A. Ritchie; M. S. Skolnick; D. N. Krizhanovskii

doi:10.1038/s41467-018-03188-x

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Experimental GrowthExperimental CharacterizationComputational Multiscale

Exciton-polaritons in GaAs-based slab waveguide photonic crystals

C. E. Whittaker, T. Isoniemi, S. Lovett, P. M. Walker et al.

arXiv preprint·2023·10.1038/s41467-018-03188-x·arXiv:2308.15185

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

MBE-grown GaAs-based slab waveguide structure patterned into a square-lattice photonic crystal with etched holes and grating couplers; several fabricated devices varied lattice constant, hole diameter, and etch depth.

3 preparations2 characterizations5 properties2 figures

ExperimentalGaAs-based slab waveguide photonic crystal with embedded In0.06Ga0.94As quantum wellsStudied MaterialIn0.06Ga0.94AsStudied MaterialAl0.9Ga0.1AsSubstrate / DielectricGaAsSubstrate / Dielectric

Representative photonic crystal device used for angle-resolved photoluminescence measurements, with hole diameter 47 nm and etch depth 64 nm.

3 preparations3 characterizations1 property3 figures

ExperimentalGaAs-based slab waveguide photonic crystal with embedded In0.06Ga0.94As quantum wellsStudied Material

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