Near transform-limited single photons from rapid-thermal annealed quantum dots

H. Mannel; F. Rimek; M. Zöllner; N. Schwarz; F. Schaumburg; A. D. Wieck; N. Bart; A. Ludwig; M. Geller

doi:10.1007/s00339-019-3050-6

Paper details

Research paper

Experimental GrowthExperimental Characterization

Near transform-limited single photons from rapid-thermal annealed quantum dots

H. Mannel, F. Rimek, M. Zöllner, N. Schwarz et al.

arXiv·2026·10.1007/s00339-019-3050-6·arXiv:2507.11108

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Single self-assembled quantum dot QD₁ embedded in a p-i-n diode structure with InAs/GaAs quantum-dot active region and GaAs/AlGaAs microcavity layers; post-growth rapid thermal annealed.

2 preparations3 characterizations4 properties4 figures

ExperimentalInAsStudied MaterialGaAsSubstrate / DielectricAlGaAsSubstrate / Dielectricp-i-n diodeSubstrate / Dielectric

Single self-assembled quantum dot QD₂ in the same p-i-n diode / microcavity heterostructure used for resonance-fluorescence comparison; post-growth rapid thermal annealed.

2 preparations2 properties

ExperimentalInGaAsStudied MaterialGaAsSubstrate / DielectricAlGaAsSubstrate / Dielectricp-i-n diodeSubstrate / Dielectric

Materials

InAs quantum dots

InAs

Studied Material

Also known as

self-assembled quantum dotsQDsQD

Variables

host= GaAs

composition= self-assembled

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Near transform-limited single photons from rapid-thermal annealed quantum dots | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	emission wavelength after RTA	~950nm	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	neutral exciton	X0	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	charged trion	X-	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	resonance fluorescence line	X-	InGaAs	Single self-assembled quantum dot QD₂ in the same p-i-n diod	—
PL Peak	linewidth	360MHz	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	linewidth	310MHz	InGaAs	Single self-assembled quantum dot QD₂ in the same p-i-n diod	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	emission wavelength after RTA	~950nm	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	neutral exciton	X0	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	charged trion	X-	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	resonance fluorescence line	X-	InGaAs	Single self-assembled quantum dot QD₂ in the same p-i-n diod	—
PL Peak	linewidth	360MHz	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	linewidth	310MHz	InGaAs	Single self-assembled quantum dot QD₂ in the same p-i-n diod	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	emission wavelength after RTA	~950nm	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	neutral exciton	X0	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	charged trion	X-	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	resonance fluorescence line	X-	InGaAs	Single self-assembled quantum dot QD₂ in the same p-i-n diod	—
PL Peak	linewidth	360MHz	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	linewidth	310MHz	InGaAs	Single self-assembled quantum dot QD₂ in the same p-i-n diod	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	emission wavelength after RTA	~950nm	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	neutral exciton	X0	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	charged trion	X-	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	resonance fluorescence line	X-	InGaAs	Single self-assembled quantum dot QD₂ in the same p-i-n diod	—
PL Peak	linewidth	360MHz	InAs	Single self-assembled quantum dot QD₁ embedded in a p-i-n di	—
PL Peak	linewidth	310MHz	InGaAs	Single self-assembled quantum dot QD₂ in the same p-i-n diod	—

Near transform-limited single photons from rapid-thermal annealed quantum dots

Samples

Single self-assembled quantum dot QD₁ embedded in a p-i-n diode structure with InAs/GaAs quantum-dot active region and GaAs/AlGaAs microcavity layers; post-growth rapid thermal annealed.

Single self-assembled quantum dot QD₂ in the same p-i-n diode / microcavity heterostructure used for resonance-fluorescence comparison; post-growth rapid thermal annealed.

Materials

Why these are connected

Near transform-limited single photons from rapid-thermal annealed quantum dots

Samples

Single self-assembled quantum dot QD₁ embedded in a p-i-n diode structure with InAs/GaAs quantum-dot active region and GaAs/AlGaAs microcavity layers; post-growth rapid thermal annealed.

Single self-assembled quantum dot QD₂ in the same p-i-n diode / microcavity heterostructure used for resonance-fluorescence comparison; post-growth rapid thermal annealed.

Materials

Why these are connected

Near transform-limited single photons from rapid-thermal annealed quantum dots

Samples

Single self-assembled quantum dot QD₁ embedded in a p-i-n diode structure with InAs/GaAs quantum-dot active region and GaAs/AlGaAs microcavity layers; post-growth rapid thermal annealed.

Single self-assembled quantum dot QD₂ in the same p-i-n diode / microcavity heterostructure used for resonance-fluorescence comparison; post-growth rapid thermal annealed.

Materials

Why these are connected

Near transform-limited single photons from rapid-thermal annealed quantum dots

Samples

Single self-assembled quantum dot QD₁ embedded in a p-i-n diode structure with InAs/GaAs quantum-dot active region and GaAs/AlGaAs microcavity layers; post-growth rapid thermal annealed.

Single self-assembled quantum dot QD₂ in the same p-i-n diode / microcavity heterostructure used for resonance-fluorescence comparison; post-growth rapid thermal annealed.

Materials

Why these are connected

Near transform-limited single photons from rapid-thermal annealed quantum dots

Samples

Single self-assembled quantum dot QD₁ embedded in a p-i-n diode structure with InAs/GaAs quantum-dot active region and GaAs/AlGaAs microcavity layers; post-growth rapid thermal annealed.

Single self-assembled quantum dot QD₂ in the same p-i-n diode / microcavity heterostructure used for resonance-fluorescence comparison; post-growth rapid thermal annealed.

Materials

Why these are connected

Near transform-limited single photons from rapid-thermal annealed quantum dots

Samples

Single self-assembled quantum dot QD₁ embedded in a p-i-n diode structure with InAs/GaAs quantum-dot active region and GaAs/AlGaAs microcavity layers; post-growth rapid thermal annealed.

Single self-assembled quantum dot QD₂ in the same p-i-n diode / microcavity heterostructure used for resonance-fluorescence comparison; post-growth rapid thermal annealed.

Materials

Why these are connected

Near transform-limited single photons from rapid-thermal annealed quantum dots

Samples

Single self-assembled quantum dot QD₁ embedded in a p-i-n diode structure with InAs/GaAs quantum-dot active region and GaAs/AlGaAs microcavity layers; post-growth rapid thermal annealed.

Single self-assembled quantum dot QD₂ in the same p-i-n diode / microcavity heterostructure used for resonance-fluorescence comparison; post-growth rapid thermal annealed.

Materials

Why these are connected

Near transform-limited single photons from rapid-thermal annealed quantum dots

Samples

Single self-assembled quantum dot QD₁ embedded in a p-i-n diode structure with InAs/GaAs quantum-dot active region and GaAs/AlGaAs microcavity layers; post-growth rapid thermal annealed.

Single self-assembled quantum dot QD₂ in the same p-i-n diode / microcavity heterostructure used for resonance-fluorescence comparison; post-growth rapid thermal annealed.

Materials

Why these are connected

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