Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe

Michael Chilcote; Alessandro R. Mazza; Qiangsheng Lu; Isaiah Gray; Qi Tian; Qinwen Deng; Duncan Moseley; An-Hsi Chen; Jason Lapano; Jason S. Gardner; Gyula Eres; T. Zac Ward; Erxi Feng; Huibo Cao; Valeria Lauter; Michael A. McGuire; Raphael Hermann; David Parker; Myung-Geun Han; Asghar Kayani; Gaurab Rimal; Liang Wu; Timothy R. Charlton; Robert G. Moore; Matthew Brahlek

doi:10.1002/adfm.202405829

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe

Michael Chilcote, Alessandro R. Mazza, Qiangsheng Lu, Isaiah Gray et al.

2025

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

20 nm MnTe film grown by MBE on InP(111) and measured by transport, ARPES, and polarized neutron reflectometry.

2 preparations5 characterizations2 properties3 figures

ExperimentalMnTeStudied MaterialInPSubstrate / Dielectric

~70 nm MnTe film grown by MBE on InP(111) and measured by neutron diffraction.

2 preparations4 characterizations1 property2 figures

ExperimentalMnTeStudied MaterialInPSubstrate / Dielectric

Materials

MnTe

Studied Material

Variables

crystal_structure= NiAs

studied material

InP

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	InP substrate thickness	—angstrom	InP	20 nm MnTe film grown by MBE on InP(111) and measured by tra ~70 nm MnTe film grown by MBE on InP(111) and measured by ne	—
Fet Sheet Resistance	sheet resistance	—ohm/sq	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra	—
PL Peak	electronic state	metallic	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra	—
Magnetic Transition Temperature	Néel temperature	310K	MnTe	~70 nm MnTe film grown by MBE on InP(111) and measured by ne	—
Xrd Peak Two Theta	(002)	—deg	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra ~70 nm MnTe film grown by MBE on InP(111) and measured by ne	—
Weak Ferromagnetism	ferromagnetic moment	present	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	InP substrate thickness	—angstrom	InP	20 nm MnTe film grown by MBE on InP(111) and measured by tra ~70 nm MnTe film grown by MBE on InP(111) and measured by ne	—
Fet Sheet Resistance	sheet resistance	—ohm/sq	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra	—
PL Peak	electronic state	metallic	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra	—
Magnetic Transition Temperature	Néel temperature	310K	MnTe	~70 nm MnTe film grown by MBE on InP(111) and measured by ne	—
Xrd Peak Two Theta	(002)	—deg	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra ~70 nm MnTe film grown by MBE on InP(111) and measured by ne	—
Weak Ferromagnetism	ferromagnetic moment	present	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	InP substrate thickness	—angstrom	InP	20 nm MnTe film grown by MBE on InP(111) and measured by tra ~70 nm MnTe film grown by MBE on InP(111) and measured by ne	—
Fet Sheet Resistance	sheet resistance	—ohm/sq	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra	—
PL Peak	electronic state	metallic	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra	—
Magnetic Transition Temperature	Néel temperature	310K	MnTe	~70 nm MnTe film grown by MBE on InP(111) and measured by ne	—
Xrd Peak Two Theta	(002)	—deg	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra ~70 nm MnTe film grown by MBE on InP(111) and measured by ne	—
Weak Ferromagnetism	ferromagnetic moment	present	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	InP substrate thickness	—angstrom	InP	20 nm MnTe film grown by MBE on InP(111) and measured by tra ~70 nm MnTe film grown by MBE on InP(111) and measured by ne	—
Fet Sheet Resistance	sheet resistance	—ohm/sq	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra	—
PL Peak	electronic state	metallic	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra	—
Magnetic Transition Temperature	Néel temperature	310K	MnTe	~70 nm MnTe film grown by MBE on InP(111) and measured by ne	—
Xrd Peak Two Theta	(002)	—deg	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra ~70 nm MnTe film grown by MBE on InP(111) and measured by ne	—
Weak Ferromagnetism	ferromagnetic moment	present	MnTe	20 nm MnTe film grown by MBE on InP(111) and measured by tra	—

Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe

Samples

20 nm MnTe film grown by MBE on InP(111) and measured by transport, ARPES, and polarized neutron reflectometry.

~70 nm MnTe film grown by MBE on InP(111) and measured by neutron diffraction.

Materials

Why these are connected

Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe

Samples

20 nm MnTe film grown by MBE on InP(111) and measured by transport, ARPES, and polarized neutron reflectometry.

~70 nm MnTe film grown by MBE on InP(111) and measured by neutron diffraction.

Materials

Why these are connected

Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe

Samples

20 nm MnTe film grown by MBE on InP(111) and measured by transport, ARPES, and polarized neutron reflectometry.

~70 nm MnTe film grown by MBE on InP(111) and measured by neutron diffraction.

Materials

Why these are connected

Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe

Samples

20 nm MnTe film grown by MBE on InP(111) and measured by transport, ARPES, and polarized neutron reflectometry.

~70 nm MnTe film grown by MBE on InP(111) and measured by neutron diffraction.

Materials

Why these are connected

Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe

Samples

20 nm MnTe film grown by MBE on InP(111) and measured by transport, ARPES, and polarized neutron reflectometry.

~70 nm MnTe film grown by MBE on InP(111) and measured by neutron diffraction.

Materials

Why these are connected

Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe

Samples

20 nm MnTe film grown by MBE on InP(111) and measured by transport, ARPES, and polarized neutron reflectometry.

~70 nm MnTe film grown by MBE on InP(111) and measured by neutron diffraction.

Materials

Why these are connected

Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe

Samples

20 nm MnTe film grown by MBE on InP(111) and measured by transport, ARPES, and polarized neutron reflectometry.

~70 nm MnTe film grown by MBE on InP(111) and measured by neutron diffraction.

Materials

Why these are connected

Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe

Samples

20 nm MnTe film grown by MBE on InP(111) and measured by transport, ARPES, and polarized neutron reflectometry.

~70 nm MnTe film grown by MBE on InP(111) and measured by neutron diffraction.

Materials

Why these are connected

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Growth

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Growth

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