Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations6 properties5 figures
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Exciton-polaritons in GaAs-based slab waveguide photonic crystals
Near transform-limited single photons from rapid-thermal annealed quantum dots
Comparative Study of InGaAs and GaAsSb Nanowires for Room Temperature Operation of Avalanche Photodiodes at 1.55 μm
Directional telecom photons from a chirally coupled quantum dot
In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission
Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications
Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se2 on 2D, 3D and polycrystalline substrates
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Magnetic field induced polarization enhancement in the photoluminescence of MBE-grown WSe2 layers
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations6 properties5 figures
Related documents with shared materials, methods, properties, or citations.
Exciton-polaritons in GaAs-based slab waveguide photonic crystals
Near transform-limited single photons from rapid-thermal annealed quantum dots
Comparative Study of InGaAs and GaAsSb Nanowires for Room Temperature Operation of Avalanche Photodiodes at 1.55 μm
Directional telecom photons from a chirally coupled quantum dot
In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission
Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications
Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se2 on 2D, 3D and polycrystalline substrates
The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots
Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources
Single photon emitters in thin GaAsN nanowire tubes grown on Si
Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride
Magnetic field induced polarization enhancement in the photoluminescence of MBE-grown WSe2 layers
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations6 properties5 figures
Related documents with shared materials, methods, properties, or citations.
Exciton-polaritons in GaAs-based slab waveguide photonic crystals
Near transform-limited single photons from rapid-thermal annealed quantum dots
Comparative Study of InGaAs and GaAsSb Nanowires for Room Temperature Operation of Avalanche Photodiodes at 1.55 μm
Directional telecom photons from a chirally coupled quantum dot
In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission
Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications
Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se2 on 2D, 3D and polycrystalline substrates
The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots
Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources
Single photon emitters in thin GaAsN nanowire tubes grown on Si
Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride
Magnetic field induced polarization enhancement in the photoluminescence of MBE-grown WSe2 layers
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations6 properties5 figures
Related documents with shared materials, methods, properties, or citations.
Exciton-polaritons in GaAs-based slab waveguide photonic crystals
Near transform-limited single photons from rapid-thermal annealed quantum dots
Comparative Study of InGaAs and GaAsSb Nanowires for Room Temperature Operation of Avalanche Photodiodes at 1.55 μm
Directional telecom photons from a chirally coupled quantum dot
In-situ Silicon Doped hBN by High-Temperature Molecular Beam Epitaxy Enables Single Photon Emission
Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications
Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se2 on 2D, 3D and polycrystalline substrates
The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots
Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources
Single photon emitters in thin GaAsN nanowire tubes grown on Si
Enhanced optical properties of MoSe2 grown by molecular beam epitaxy on hexagonal boron nitride
Magnetic field induced polarization enhancement in the photoluminescence of MBE-grown WSe2 layers
