Research paper
Experimental CharacterizationCombined Light Excitation and Scanning Gate Microscopy on Heterostructure Nanowire Photovoltaic Devices
Yen-Po Liu, Jonatan Fast, Yang Chen, Ren Zhe et al.
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Sample Length | nanowire total length | 2um | — | |||
| Sample Diameter | nanowire diameter | 50nm | — | |||
| Sample Length | InP segment length | 25nm | — | |||
| Substrate Thickness | SiO₂ layer thickness | 100nm | — | |||
| Thickness | Ni contact thickness | 25nm | — | |||
| Thickness | Au contact thickness | 75nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Sample Length | nanowire total length | 2um | — | |||
| Sample Diameter | nanowire diameter | 50nm | — | |||
| Sample Length | InP segment length | 25nm | — | |||
| Substrate Thickness | SiO₂ layer thickness | 100nm | — | |||
| Thickness | Ni contact thickness | 25nm | — | |||
| Thickness | Au contact thickness | 75nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Sample Length | nanowire total length | 2um | — | |||
| Sample Diameter | nanowire diameter | 50nm | — | |||
| Sample Length | InP segment length | 25nm | — | |||
| Substrate Thickness | SiO₂ layer thickness | 100nm | — | |||
| Thickness | Ni contact thickness | 25nm | — | |||
| Thickness | Au contact thickness | 75nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Sample Length | nanowire total length | 2um | — | |||
| Sample Diameter | nanowire diameter | 50nm | — | |||
| Sample Length | InP segment length | 25nm | — | |||
| Substrate Thickness | SiO₂ layer thickness | 100nm | — | |||
| Thickness | Ni contact thickness | 25nm | — | |||
| Thickness | Au contact thickness | 75nm | — |