Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations6 properties5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | InP wafer thickness | 357um | — | |||
| Fet Breakdown Voltage | breakdown voltage | 1010V | — | |||
| Fet Threshold Voltage | operating voltage at onset of non-ohmic behavior | 350V | — | |||
| Power Dissipation | power dissipation at operating voltage | 9.08mW | — | |||
| Volume | active volume under central pad | 0.0014cm³ | — | |||
| Power Density | approximate power density | 6.48W/cm³ | — |
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations6 properties5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | InP wafer thickness | 357um | — | |||
| Fet Breakdown Voltage | breakdown voltage | 1010V | — | |||
| Fet Threshold Voltage | operating voltage at onset of non-ohmic behavior | 350V | — | |||
| Power Dissipation | power dissipation at operating voltage | 9.08mW | — | |||
| Volume | active volume under central pad | 0.0014cm³ | — | |||
| Power Density | approximate power density | 6.48W/cm³ | — |
Related documents with shared materials, methods, properties, or citations.
Compact and fully functional high-frequency sine wave gating InGaAs/InP single-photon detector module
Low Excess Noise, High Quantum Efficiency Avalanche Photodiodes for Beyond 2 µm Wavelength Detection
Novel indium phosphide charged particle detector characterization with a 120 GeV proton beam
17 GHz Lossless InP-Membrane Active Metasurface
Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
A Wafer-Scale Heterogeneous III-V-on-Silicon Nitride Quantum Photonic Platform
Large even-odd spacing and g-factor anisotropy in PbTe quantum dots
Voltage-Programmable Photon Statistics Using a High-Extinction Thin-film Lithium Niobate Modulator
LOW-RESISTIVE, CMOS-COMPATIBLE, AU-FREE OHMIC CONTACT TO N-INP
Combined Light Excitation and Scanning Gate Microscopy on Heterostructure Nanowire Photovoltaic Devices
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations6 properties5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | InP wafer thickness | 357um | — | |||
| Fet Breakdown Voltage | breakdown voltage | 1010V | — | |||
| Fet Threshold Voltage | operating voltage at onset of non-ohmic behavior | 350V | — | |||
| Power Dissipation | power dissipation at operating voltage | 9.08mW | — | |||
| Volume | active volume under central pad | 0.0014cm³ | — | |||
| Power Density | approximate power density | 6.48W/cm³ | — |
Related documents with shared materials, methods, properties, or citations.
Compact and fully functional high-frequency sine wave gating InGaAs/InP single-photon detector module
Low Excess Noise, High Quantum Efficiency Avalanche Photodiodes for Beyond 2 µm Wavelength Detection
Novel indium phosphide charged particle detector characterization with a 120 GeV proton beam
17 GHz Lossless InP-Membrane Active Metasurface
Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
A Wafer-Scale Heterogeneous III-V-on-Silicon Nitride Quantum Photonic Platform
Large even-odd spacing and g-factor anisotropy in PbTe quantum dots
Voltage-Programmable Photon Statistics Using a High-Extinction Thin-film Lithium Niobate Modulator
LOW-RESISTIVE, CMOS-COMPATIBLE, AU-FREE OHMIC CONTACT TO N-INP
Combined Light Excitation and Scanning Gate Microscopy on Heterostructure Nanowire Photovoltaic Devices
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
2 characterizations6 properties5 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | InP wafer thickness | 357um | — | |||
| Fet Breakdown Voltage | breakdown voltage | 1010V | — | |||
| Fet Threshold Voltage | operating voltage at onset of non-ohmic behavior | 350V | — | |||
| Power Dissipation | power dissipation at operating voltage | 9.08mW | — | |||
| Volume | active volume under central pad | 0.0014cm³ | — | |||
| Power Density | approximate power density | 6.48W/cm³ | — |
Related documents with shared materials, methods, properties, or citations.
Compact and fully functional high-frequency sine wave gating InGaAs/InP single-photon detector module
Low Excess Noise, High Quantum Efficiency Avalanche Photodiodes for Beyond 2 µm Wavelength Detection
Novel indium phosphide charged particle detector characterization with a 120 GeV proton beam
17 GHz Lossless InP-Membrane Active Metasurface
Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
A Wafer-Scale Heterogeneous III-V-on-Silicon Nitride Quantum Photonic Platform
Large even-odd spacing and g-factor anisotropy in PbTe quantum dots
Voltage-Programmable Photon Statistics Using a High-Extinction Thin-film Lithium Niobate Modulator
LOW-RESISTIVE, CMOS-COMPATIBLE, AU-FREE OHMIC CONTACT TO N-INP
Combined Light Excitation and Scanning Gate Microscopy on Heterostructure Nanowire Photovoltaic Devices