Research paper
Experimental CharacterizationCompact and fully functional high-frequency sine wave gating InGaAs/InP single-photon detector module
Qi Xu, Chao Yu, Dajian Cui, Xuan-Yi Zhang et al.
Copyright © 2026 Matter42. All rights reserved.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization1 property1 figure
1 characterization9 properties1 figure
1 characterization6 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Module Size | SPD module size | 6 cm × 5.7 cm × 1.7 cm | — | |||
| Module Size | SWGIC size | 30 mm × 20 mm × 3 mm | — | |||
| Optical Aperture Diameter | active region diameter | 25um | — | |||
| Gate Peak To Peak Voltage | OUT₁ gate signal | 20V | — | |||
| Gate Signal Frequency | OUT₁ gate signal | 1.25GHz | — | |||
| Signal Fwhm | OUT₁ gate signal | 100MHz | — | |||
| Output Power | OUT₁ maximum output power | 30.8dBm | — | |||
| Monitor Output Voltage | OUT₂ voltage corresponding to OUT₁ output power | 1.1 to 2.2V | — | |||
| Delay Step | minimum delay adjustment step | 12.5ps | — | |||
| Delay Error | maximum delay error | 9ps | — | |||
| Delay Error | mean delay error | 3ps | — | |||
| Photon Detection Efficiency | PDE | 40% | — | |||
| Dark Count Rate | DCR | 9kcps | — | |||
| Afterpulse Probability | afterpulse probability | 4.6% | — | |||
| Operation Temperature | SPD operating temperature | 238K | — | |||
| Hold Off Time | hold-off time | 160ns | — |
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization1 property1 figure
1 characterization9 properties1 figure
1 characterization6 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Module Size | SPD module size | 6 cm × 5.7 cm × 1.7 cm | — | |||
| Module Size | SWGIC size | 30 mm × 20 mm × 3 mm | — | |||
| Optical Aperture Diameter | active region diameter | 25um | — | |||
| Gate Peak To Peak Voltage | OUT₁ gate signal | 20V | — | |||
| Gate Signal Frequency | OUT₁ gate signal | 1.25GHz | — | |||
| Signal Fwhm | OUT₁ gate signal | 100MHz | — | |||
| Output Power | OUT₁ maximum output power | 30.8dBm | — | |||
| Monitor Output Voltage | OUT₂ voltage corresponding to OUT₁ output power | 1.1 to 2.2V | — | |||
| Delay Step | minimum delay adjustment step | 12.5ps | — | |||
| Delay Error | maximum delay error | 9ps | — | |||
| Delay Error | mean delay error | 3ps | — | |||
| Photon Detection Efficiency | PDE | 40% | — | |||
| Dark Count Rate | DCR | 9kcps | — | |||
| Afterpulse Probability | afterpulse probability | 4.6% | — | |||
| Operation Temperature | SPD operating temperature | 238K | — | |||
| Hold Off Time | hold-off time | 160ns | — |
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Novel indium phosphide charged particle detector characterization with a 120 GeV proton beam
Pulse duration retrieval using a commercial laser diode with a monitor photodiode
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization1 property1 figure
1 characterization9 properties1 figure
1 characterization6 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Module Size | SPD module size | 6 cm × 5.7 cm × 1.7 cm | — | |||
| Module Size | SWGIC size | 30 mm × 20 mm × 3 mm | — | |||
| Optical Aperture Diameter | active region diameter | 25um | — | |||
| Gate Peak To Peak Voltage | OUT₁ gate signal | 20V | — | |||
| Gate Signal Frequency | OUT₁ gate signal | 1.25GHz | — | |||
| Signal Fwhm | OUT₁ gate signal | 100MHz | — | |||
| Output Power | OUT₁ maximum output power | 30.8dBm | — | |||
| Monitor Output Voltage | OUT₂ voltage corresponding to OUT₁ output power | 1.1 to 2.2V | — | |||
| Delay Step | minimum delay adjustment step | 12.5ps | — | |||
| Delay Error | maximum delay error | 9ps | — | |||
| Delay Error | mean delay error | 3ps | — | |||
| Photon Detection Efficiency | PDE | 40% | — | |||
| Dark Count Rate | DCR | 9kcps | — | |||
| Afterpulse Probability | afterpulse probability | 4.6% | — | |||
| Operation Temperature | SPD operating temperature | 238K | — | |||
| Hold Off Time | hold-off time | 160ns | — |
Related documents with shared materials, methods, properties, or citations.
Low Excess Noise, High Quantum Efficiency Avalanche Photodiodes for Beyond 2 µm Wavelength Detection
Characterizing Novel Indium Phosphide Pad Detectors with Focused X-ray Beams and Laboratory Tests
Recent advances in InGaAs/InP single-photon detectors
Phase-space analysis of a two-section InP laser as an all-optical spiking neuron: dependency on control and design parameters
Novel indium phosphide charged particle detector characterization with a 120 GeV proton beam
Pulse duration retrieval using a commercial laser diode with a monitor photodiode
A Wafer-Scale Heterogeneous III-V-on-Silicon Nitride Quantum Photonic Platform
Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
Antarctic Infrared Binocular Telescope. I. System Overview, Laboratory Testing, and On-Sky Performance Evaluation
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Lifetime Prediction of 1550 nm DFB Laser using Machine learning Techniques
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization1 property1 figure
1 characterization9 properties1 figure
1 characterization6 properties1 figure
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Module Size | SPD module size | 6 cm × 5.7 cm × 1.7 cm | — | |||
| Module Size | SWGIC size | 30 mm × 20 mm × 3 mm | — | |||
| Optical Aperture Diameter | active region diameter | 25um | — | |||
| Gate Peak To Peak Voltage | OUT₁ gate signal | 20V | — | |||
| Gate Signal Frequency | OUT₁ gate signal | 1.25GHz | — | |||
| Signal Fwhm | OUT₁ gate signal | 100MHz | — | |||
| Output Power | OUT₁ maximum output power | 30.8dBm | — | |||
| Monitor Output Voltage | OUT₂ voltage corresponding to OUT₁ output power | 1.1 to 2.2V | — | |||
| Delay Step | minimum delay adjustment step | 12.5ps | — | |||
| Delay Error | maximum delay error | 9ps | — | |||
| Delay Error | mean delay error | 3ps | — | |||
| Photon Detection Efficiency | PDE | 40% | — | |||
| Dark Count Rate | DCR | 9kcps | — | |||
| Afterpulse Probability | afterpulse probability | 4.6% | — | |||
| Operation Temperature | SPD operating temperature | 238K | — | |||
| Hold Off Time | hold-off time | 160ns | — |
Related documents with shared materials, methods, properties, or citations.
Low Excess Noise, High Quantum Efficiency Avalanche Photodiodes for Beyond 2 µm Wavelength Detection
Characterizing Novel Indium Phosphide Pad Detectors with Focused X-ray Beams and Laboratory Tests
Recent advances in InGaAs/InP single-photon detectors
Phase-space analysis of a two-section InP laser as an all-optical spiking neuron: dependency on control and design parameters
Novel indium phosphide charged particle detector characterization with a 120 GeV proton beam
Pulse duration retrieval using a commercial laser diode with a monitor photodiode
A Wafer-Scale Heterogeneous III-V-on-Silicon Nitride Quantum Photonic Platform
Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation
Antarctic Infrared Binocular Telescope. I. System Overview, Laboratory Testing, and On-Sky Performance Evaluation
Combined Light Excitation and Scanning Gate Microscopy on Heterostructure Nanowire Photovoltaic Devices
Tunable quantum emitters on large-scale foundry silicon photonics
Lifetime Prediction of 1550 nm DFB Laser using Machine learning Techniques