Research paper
Experimental CharacterizationTheoretical| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | InP slab thickness | 150nm | — | |||
| Substrate Thickness | SiO₂ spacer thickness | 50nm | — | |||
| Substrate Thickness | SiO₂ overlayer thickness | 110nm | — | |||
| Lateral Feature Size | nanoparticle diameter | 60nm | — | |||
| Lateral Feature Size | array period | 308nm | — | |||
| Fet Threshold Voltage | lasing threshold fluence | 94.99µJ/cm² pulse^-1 | — | |||
| Quality Factor | SLR cavity quality factor | 800 | — | |||
| Spectral Tuning Range | lasing wavelength tuning range | 70nm | — | |||
| Peak Shift | blue shift of lasing peak | <2nm | — | |||
| Linewidth | lasing peak FWHM | 1.1nm | — | |||
| Peak Position | center of InP gain region | 900nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | InP slab thickness | 150nm | — | |||
| Substrate Thickness | SiO₂ spacer thickness | 50nm | — | |||
| Substrate Thickness | SiO₂ overlayer thickness | 110nm | — | |||
| Lateral Feature Size | nanoparticle diameter | 60nm | — | |||
| Lateral Feature Size | array period | 308nm | — | |||
| Fet Threshold Voltage | lasing threshold fluence | 94.99µJ/cm² pulse^-1 | — | |||
| Quality Factor | SLR cavity quality factor | 800 | — | |||
| Spectral Tuning Range | lasing wavelength tuning range | 70nm | — | |||
| Peak Shift | blue shift of lasing peak | <2nm | — | |||
| Linewidth | lasing peak FWHM | 1.1nm | — | |||
| Peak Position | center of InP gain region | 900nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | InP slab thickness | 150nm | — | |||
| Substrate Thickness | SiO₂ spacer thickness | 50nm | — | |||
| Substrate Thickness | SiO₂ overlayer thickness | 110nm | — | |||
| Lateral Feature Size | nanoparticle diameter | 60nm | — | |||
| Lateral Feature Size | array period | 308nm | — | |||
| Fet Threshold Voltage | lasing threshold fluence | 94.99µJ/cm² pulse^-1 | — | |||
| Quality Factor | SLR cavity quality factor | 800 | — | |||
| Spectral Tuning Range | lasing wavelength tuning range | 70nm | — | |||
| Peak Shift | blue shift of lasing peak | <2nm | — | |||
| Linewidth | lasing peak FWHM | 1.1nm | — | |||
| Peak Position | center of InP gain region | 900nm | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | InP slab thickness | 150nm | — | |||
| Substrate Thickness | SiO₂ spacer thickness | 50nm | — | |||
| Substrate Thickness | SiO₂ overlayer thickness | 110nm | — | |||
| Lateral Feature Size | nanoparticle diameter | 60nm | — | |||
| Lateral Feature Size | array period | 308nm | — | |||
| Fet Threshold Voltage | lasing threshold fluence | 94.99µJ/cm² pulse^-1 | — | |||
| Quality Factor | SLR cavity quality factor | 800 | — | |||
| Spectral Tuning Range | lasing wavelength tuning range | 70nm | — | |||
| Peak Shift | blue shift of lasing peak | <2nm | — | |||
| Linewidth | lasing peak FWHM | 1.1nm | — | |||
| Peak Position | center of InP gain region | 900nm | — |
figure_digitization.json#Figure 3figure_digitization.json#Figure 3figure_digitization.json#Figure 3figure_digitization.json#Figure 3