Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation

Paper details

Research paper

Experimental Characterization

Hatam Mahmudlu, Robert Johanning, Anahita Khodadad Kashi, Albert van Rees et al.

Nature Communications·2025·10.1038/s41566-023-01193-1·arXiv:2206.08715

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

2 characterizations12 properties1 figure

ExperimentalInPStudied MaterialSi₃N₄Studied Material

InP

Studied Material

Also known as

indium phosphide

Variables

function= electrically pumped gain section / reflective semiconductor optical amplifier

studied material

Si₃N₄

Studied Material

Related documents with shared materials, methods, properties, or citations.

Fully on-chip photonic turnkey quantum source for entangled qubit/qudit state generation | Matter42 Literature

Type	Label	Value	Material	Sample	Source
Optical Band Gap	laser line frequency	193.4THz	InP Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	FSR R₁	107GHz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	FSR R₂	167GHz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	FSR R₃	199GHz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	side-mode suppression ratio	55dB	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	pair-emission bandwidth	1THz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	pair detection rate	620Hz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Fet On Off Ratio	coincidence-to-accidental ratio	80	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	interference visibility	96%	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	tomographic fidelity	99%	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	number of resonant modes for pair emission	4	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	noise suppression	55dB	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—

Type	Label	Value	Material	Sample	Source
Optical Band Gap	laser line frequency	193.4THz	InP Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	FSR R₁	107GHz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	FSR R₂	167GHz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	FSR R₃	199GHz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	side-mode suppression ratio	55dB	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	pair-emission bandwidth	1THz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	pair detection rate	620Hz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Fet On Off Ratio	coincidence-to-accidental ratio	80	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	interference visibility	96%	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	tomographic fidelity	99%	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	number of resonant modes for pair emission	4	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	noise suppression	55dB	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—

Type	Label	Value	Material	Sample	Source
Optical Band Gap	laser line frequency	193.4THz	InP Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	FSR R₁	107GHz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	FSR R₂	167GHz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	FSR R₃	199GHz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	side-mode suppression ratio	55dB	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	pair-emission bandwidth	1THz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	pair detection rate	620Hz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Fet On Off Ratio	coincidence-to-accidental ratio	80	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	interference visibility	96%	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	tomographic fidelity	99%	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	number of resonant modes for pair emission	4	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	noise suppression	55dB	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—

Type	Label	Value	Material	Sample	Source
Optical Band Gap	laser line frequency	193.4THz	InP Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	FSR R₁	107GHz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	FSR R₂	167GHz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	FSR R₃	199GHz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	side-mode suppression ratio	55dB	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	pair-emission bandwidth	1THz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	pair detection rate	620Hz	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Fet On Off Ratio	coincidence-to-accidental ratio	80	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	interference visibility	96%	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	tomographic fidelity	99%	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	number of resonant modes for pair emission	4	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—
Optical Band Gap	noise suppression	55dB	Si₃N₄	Hybrid integrated photonic quantum source consisting of an e	—