Observation of oscillating g-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts

K. L. Hudson; A. Srinivasan; D. S. Miserev; Q. Wang; O. Klochan; O. P. Sushkov; I. Farrer; D. A. Ritchie; A. R. Hamilton

doi:10.48550/arxiv.2211.00253

Paper details

Research paper

Experimental CharacterizationTheoretical

Observation of oscillating g-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts

K. L. Hudson, A. Srinivasan, D. S. Miserev, Q. Wang et al.

Physical Review Letters·2022·10.48550/arxiv.2211.00253·arXiv:2211.00253

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with three lithographically identical QPCs patterned on a single chip, oriented along [001], [011], and [010].

1 characterization8 properties2 figures

ExperimentalGaAsStudied MaterialAlGaAsSubstrate / Dielectric

Materials

GaAs

Studied Material

Also known as

gallium arsenide

studied material

AlGaAs

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Observation of oscillating g-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Carrier Density	2DHG density	200000000000cm⁻²	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Mobility	2DHG mobility	550000cm²/Vs	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Mean Free Path	mean free path	4.1um	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Fet Mobility	field-effect mobility	550000cm²/Vs	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Ratio	g⊥/g∥	0.15	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Ratio	g⊥/g∥	2	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Ratio	g⊥/g∥	2	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Anisotropy	in-plane g-factor anisotropy	factor of 5 change	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—

Properties

Type	Label	Value	Material	Sample	Source
Carrier Density	2DHG density	200000000000cm⁻²	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Mobility	2DHG mobility	550000cm²/Vs	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Mean Free Path	mean free path	4.1um	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Fet Mobility	field-effect mobility	550000cm²/Vs	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Ratio	g⊥/g∥	0.15	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Ratio	g⊥/g∥	2	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Ratio	g⊥/g∥	2	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Anisotropy	in-plane g-factor anisotropy	factor of 5 change	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—

Properties

Type	Label	Value	Material	Sample	Source
Carrier Density	2DHG density	200000000000cm⁻²	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Mobility	2DHG mobility	550000cm²/Vs	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Mean Free Path	mean free path	4.1um	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Fet Mobility	field-effect mobility	550000cm²/Vs	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Ratio	g⊥/g∥	0.15	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Ratio	g⊥/g∥	2	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Ratio	g⊥/g∥	2	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Anisotropy	in-plane g-factor anisotropy	factor of 5 change	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—

Properties

Type	Label	Value	Material	Sample	Source
Carrier Density	2DHG density	200000000000cm⁻²	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Mobility	2DHG mobility	550000cm²/Vs	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Mean Free Path	mean free path	4.1um	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Fet Mobility	field-effect mobility	550000cm²/Vs	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Ratio	g⊥/g∥	0.15	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Ratio	g⊥/g∥	2	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Ratio	g⊥/g∥	2	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—
Transport Anisotropy	in-plane g-factor anisotropy	factor of 5 change	GaAs AlGaAs	Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with th	—

Observation of oscillating g-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts

Samples

Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with three lithographically identical QPCs patterned on a single chip, oriented along [001], [011], and [010].

Materials

Why these are connected

Observation of oscillating g-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts

Samples

Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with three lithographically identical QPCs patterned on a single chip, oriented along [001], [011], and [010].

Materials

Why these are connected

Observation of oscillating g-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts

Samples

Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with three lithographically identical QPCs patterned on a single chip, oriented along [001], [011], and [010].

Materials

Why these are connected

Observation of oscillating g-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts

Samples

Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with three lithographically identical QPCs patterned on a single chip, oriented along [001], [011], and [010].

Materials

Why these are connected

Observation of oscillating g-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts

Samples

Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with three lithographically identical QPCs patterned on a single chip, oriented along [001], [011], and [010].

Materials

Why these are connected

Observation of oscillating g-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts

Samples

Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with three lithographically identical QPCs patterned on a single chip, oriented along [001], [011], and [010].

Materials

Why these are connected

Observation of oscillating g-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts

Samples

Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with three lithographically identical QPCs patterned on a single chip, oriented along [001], [011], and [010].

Materials

Why these are connected

Observation of oscillating g-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts

Samples

Undoped (100) GaAs/AlGaAs heterostructure wafer W₉₁₇ with three lithographically identical QPCs patterned on a single chip, oriented along [001], [011], and [010].

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations