CLAIMS: 1 1. A method for synthesizing graphene, the method comprising: 2 patterning and etching a first set of regions of a dielectric layer located on a 3 silicon substrate; 4 depositing a metal barrier onto said dielectric layer; 5 depositing a metal onto said metal barrier forming a stack of said metal/metal 6 barrier; 7 annealing said metal/metal barrier stack; 8 performing a chemical mechanical polishing of said metal following said 9 deposition of said metal onto said metal barrier whereby said metal resides in said 10 first set of regions of said dielectric layer after said chemical mechanical polishing is 11 performed; 12 patterning and etching photoresist mask regions to cover a second set of 13 regions of said dielectric layer, wherein said second set of regions does not overlap 14 with said first set of regions; 15 implanting carbon in said metal via ion implantation, wherein said carbon is 16 distributed in said metal; 17 removing said photoresist mask regions; 18 annealing said metal with said implanted carbon; and 19 cooling said metal with said implanted carbon after said annealing in order to 20 precipitate said carbon from said metal by diffusion to form a layer of graphene on a 21 surface of said metal.

CLAIMS: 1 1. A method for synthesizing graphene, the method comprising: 2 patterning and etching a first set of regions of a dielectric layer located on a 3 silicon substrate; 4 depositing a metal barrier onto said dielectric layer; 5 depositing a metal onto said metal barrier forming a stack of said metal/metal 6 barrier; 7 annealing said metal/metal barrier stack; 8 performing a chemical mechanical polishing of said metal following said 9 deposition of said metal onto said metal barrier whereby said metal resides in said 10 first set of regions of said dielectric layer after said chemical mechanical polishing is 11 performed; 12 patterning and etching photoresist mask regions to cover a second set of 13 regions of said dielectric layer, wherein said second set of regions does not overlap 14 with said first set of regions; 15 implanting carbon in said metal via ion implantation, wherein said carbon is 16 distributed in said metal; 17 removing said photoresist mask regions; 18 annealing said metal with said implanted carbon; and 19 cooling said metal with said implanted carbon after said annealing in order to 20 precipitate said carbon from said metal by diffusion to form a layer of graphene on a 21 surface of said metal.

CLAIMS: 1 1. A method for synthesizing graphene, the method comprising: 2 patterning and etching a first set of regions of a dielectric layer located on a 3 silicon substrate; 4 depositing a metal barrier onto said dielectric layer; 5 depositing a metal onto said metal barrier forming a stack of said metal/metal 6 barrier; 7 annealing said metal/metal barrier stack; 8 performing a chemical mechanical polishing of said metal following said 9 deposition of said metal onto said metal barrier whereby said metal resides in said 10 first set of regions of said dielectric layer after said chemical mechanical polishing is 11 performed; 12 patterning and etching photoresist mask regions to cover a second set of 13 regions of said dielectric layer, wherein said second set of regions does not overlap 14 with said first set of regions; 15 implanting carbon in said metal via ion implantation, wherein said carbon is 16 distributed in said metal; 17 removing said photoresist mask regions; 18 annealing said metal with said implanted carbon; and 19 cooling said metal with said implanted carbon after said annealing in order to 20 precipitate said carbon from said metal by diffusion to form a layer of graphene on a 21 surface of said metal.

CLAIMS: 1 1. A method for synthesizing graphene, the method comprising: 2 patterning and etching a first set of regions of a dielectric layer located on a 3 silicon substrate; 4 depositing a metal barrier onto said dielectric layer; 5 depositing a metal onto said metal barrier forming a stack of said metal/metal 6 barrier; 7 annealing said metal/metal barrier stack; 8 performing a chemical mechanical polishing of said metal following said 9 deposition of said metal onto said metal barrier whereby said metal resides in said 10 first set of regions of said dielectric layer after said chemical mechanical polishing is 11 performed; 12 patterning and etching photoresist mask regions to cover a second set of 13 regions of said dielectric layer, wherein said second set of regions does not overlap 14 with said first set of regions; 15 implanting carbon in said metal via ion implantation, wherein said carbon is 16 distributed in said metal; 17 removing said photoresist mask regions; 18 annealing said metal with said implanted carbon; and 19 cooling said metal with said implanted carbon after said annealing in order to 20 precipitate said carbon from said metal by diffusion to form a layer of graphene on a 21 surface of said metal.