Patent
US 10,157,989GRAPHENE ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF
Chang Seung Lee
US
Copyright © 2026 Matter42. All rights reserved.
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Atlas literature
Patent
US 10,157,989Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic sectional view of a graphene electronic device according to example embodiments. [19]
FIG. 2 is a schematic sectional view illustrating a method of manufacturing the graphene electronic device shown in
FIG. 3 is a schematic sectional view of a thin film transistor according to example embodiments. [21]
FIG. 4 is a schematic sectional view of a graphene electronic device according to example embodiments. [22]
FIGS. 5 to 7 are schematic sectional views illustrating a method of manufacturing the graphene electronic device shown in
FIG. 6, the structure 500 formed as described above may be reversed and attached to a substrate 410. The attachment of the graphene layer 430 and the substrate …
FIG. 7, the sacrificial insulating layer 520 may be removed, for example, by wet etching, to separate the sacrificial substrate 510. Therefore, the catalyst …
FIG. 8 is a schematic sectional view of a thin film diode according to example embodiments. [24]
FIGS. 9 to 12 are schematic sectional views illustrating a method of manufacturing the thin film diode shown in F I G. 8.
FIG. 10, a subsidiary insulating layer 620 and a conductor layer (not shown) may be deposited in sequence on a substrate 610 regardless of the structure 700. …
FIG. 11, the structure 700 may be reversed and attached to the gate insulating layer 640, and the sacrificial insulating layer 720 may be removed to separate …
FIG. 12, the catalyst layer 730 may be converted into a metal compound layer 665 having a semiconductive property by a heat treatment. The metal compound layer …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene electronic device, the method comprising: forming a metal compound layer and a catalyst layer on a substrate, the catalyst layer including a metal element in the metal compound layer; growing a graphene layer on the catalyst layer; converting the catalyst layer into a portion of the metal compound layer; and forming at least one electrode on the graphene layer. Previously presented
The method of claim 1, wherein the metal element includes at least one of copper (Cu), cobalt (Co), and nickel (Ni). Original
The method of claim 1, wherein the graphene layer includes one of monolayer graphene and multilayer graphene. Original
A method of manufacturing a graphene electronic device, the method comprising: forming a first insulating layer on a first substrate; forming a catalyst layer on the first insulating layer, the catalyst layer including a metal element; forming a graphene layer on the catalyst layer to form a structure including the first substrate, the catalyst layer, and the graphene layer; attaching the structure to a second substrate such that the graphene layer is closer to the second substrate than the first substrate; removing the first insulating layer to separate the first substrate from the second substrate; and forming a metal compound layer by combining the metal element in the catalyst layer with another element. Original
The method of claim 7, wherein the metal element includes at least one of copper (Cu), cobalt (Co), and nickel (Ni). Original
The method of claim 7, wherein the graphene layer includes one of monolayer graphene and multilayer graphene. Original
A graphene electronic device comprising: a metal compound layer on a substrate; a planar graphene layer on the substrate in a direction substantially perpendicular to a longitudinal direction of the substrate; a gate electrode distinct from the substrate; and at least one electrode on the graphene layer, the graphene layer being between the at least one electrode and the substrate and between the at least one electrode and the metal compound layer in the direction substantially perpendicular to the longitudinal direction of the substrate, and directly in contact with the metal compound layer in an area overlapping the at least one electrode in the direction substantially perpendicular to the longitudinal direction of the substrate, wherein the metal compound layer is a single continuous layer, [[and]] includes a metal element configured to serve as a catalyst for growing the graphene layer and extends across an entire length of the graphene layer. Currently amended
The graphene electronic device of claim 14, wherein the metal element includes at least one of copper (Cu), cobalt (Co), and nickel (Ni). Original
The graphene electronic device of claim 14, wherein the graphene layer includes one of monolayer graphene and multilayer graphene. Original
Layer stacks claimed or described, ordered top of device to substrate.
top-gate graphene field-effect transistor (method 1)
graphene electronic device via transfer method (method 2)
Materials described outside the worked examples.
metal compound layer
graphene layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a schematic sectional view of a thin film transistor according to example embodiments. [21]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,157,989Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic sectional view of a graphene electronic device according to example embodiments. [19]
FIG. 2 is a schematic sectional view illustrating a method of manufacturing the graphene electronic device shown in
FIG. 3 is a schematic sectional view of a thin film transistor according to example embodiments. [21]
FIG. 4 is a schematic sectional view of a graphene electronic device according to example embodiments. [22]
FIGS. 5 to 7 are schematic sectional views illustrating a method of manufacturing the graphene electronic device shown in
FIG. 6, the structure 500 formed as described above may be reversed and attached to a substrate 410. The attachment of the graphene layer 430 and the substrate …
FIG. 7, the sacrificial insulating layer 520 may be removed, for example, by wet etching, to separate the sacrificial substrate 510. Therefore, the catalyst …
FIG. 8 is a schematic sectional view of a thin film diode according to example embodiments. [24]
FIGS. 9 to 12 are schematic sectional views illustrating a method of manufacturing the thin film diode shown in F I G. 8.
FIG. 10, a subsidiary insulating layer 620 and a conductor layer (not shown) may be deposited in sequence on a substrate 610 regardless of the structure 700. …
FIG. 11, the structure 700 may be reversed and attached to the gate insulating layer 640, and the sacrificial insulating layer 720 may be removed to separate …
FIG. 12, the catalyst layer 730 may be converted into a metal compound layer 665 having a semiconductive property by a heat treatment. The metal compound layer …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene electronic device, the method comprising: forming a metal compound layer and a catalyst layer on a substrate, the catalyst layer including a metal element in the metal compound layer; growing a graphene layer on the catalyst layer; converting the catalyst layer into a portion of the metal compound layer; and forming at least one electrode on the graphene layer. Previously presented
The method of claim 1, wherein the metal element includes at least one of copper (Cu), cobalt (Co), and nickel (Ni). Original
The method of claim 1, wherein the graphene layer includes one of monolayer graphene and multilayer graphene. Original
A method of manufacturing a graphene electronic device, the method comprising: forming a first insulating layer on a first substrate; forming a catalyst layer on the first insulating layer, the catalyst layer including a metal element; forming a graphene layer on the catalyst layer to form a structure including the first substrate, the catalyst layer, and the graphene layer; attaching the structure to a second substrate such that the graphene layer is closer to the second substrate than the first substrate; removing the first insulating layer to separate the first substrate from the second substrate; and forming a metal compound layer by combining the metal element in the catalyst layer with another element. Original
The method of claim 7, wherein the metal element includes at least one of copper (Cu), cobalt (Co), and nickel (Ni). Original
The method of claim 7, wherein the graphene layer includes one of monolayer graphene and multilayer graphene. Original
A graphene electronic device comprising: a metal compound layer on a substrate; a planar graphene layer on the substrate in a direction substantially perpendicular to a longitudinal direction of the substrate; a gate electrode distinct from the substrate; and at least one electrode on the graphene layer, the graphene layer being between the at least one electrode and the substrate and between the at least one electrode and the metal compound layer in the direction substantially perpendicular to the longitudinal direction of the substrate, and directly in contact with the metal compound layer in an area overlapping the at least one electrode in the direction substantially perpendicular to the longitudinal direction of the substrate, wherein the metal compound layer is a single continuous layer, [[and]] includes a metal element configured to serve as a catalyst for growing the graphene layer and extends across an entire length of the graphene layer. Currently amended
The graphene electronic device of claim 14, wherein the metal element includes at least one of copper (Cu), cobalt (Co), and nickel (Ni). Original
The graphene electronic device of claim 14, wherein the graphene layer includes one of monolayer graphene and multilayer graphene. Original
Layer stacks claimed or described, ordered top of device to substrate.
top-gate graphene field-effect transistor (method 1)
graphene electronic device via transfer method (method 2)
Materials described outside the worked examples.
metal compound layer
graphene layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a schematic sectional view of a thin film transistor according to example embodiments. [21]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,157,989Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic sectional view of a graphene electronic device according to example embodiments. [19]
FIG. 2 is a schematic sectional view illustrating a method of manufacturing the graphene electronic device shown in
FIG. 3 is a schematic sectional view of a thin film transistor according to example embodiments. [21]
FIG. 4 is a schematic sectional view of a graphene electronic device according to example embodiments. [22]
FIGS. 5 to 7 are schematic sectional views illustrating a method of manufacturing the graphene electronic device shown in
FIG. 6, the structure 500 formed as described above may be reversed and attached to a substrate 410. The attachment of the graphene layer 430 and the substrate …
FIG. 7, the sacrificial insulating layer 520 may be removed, for example, by wet etching, to separate the sacrificial substrate 510. Therefore, the catalyst …
FIG. 8 is a schematic sectional view of a thin film diode according to example embodiments. [24]
FIGS. 9 to 12 are schematic sectional views illustrating a method of manufacturing the thin film diode shown in F I G. 8.
FIG. 10, a subsidiary insulating layer 620 and a conductor layer (not shown) may be deposited in sequence on a substrate 610 regardless of the structure 700. …
FIG. 11, the structure 700 may be reversed and attached to the gate insulating layer 640, and the sacrificial insulating layer 720 may be removed to separate …
FIG. 12, the catalyst layer 730 may be converted into a metal compound layer 665 having a semiconductive property by a heat treatment. The metal compound layer …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene electronic device, the method comprising: forming a metal compound layer and a catalyst layer on a substrate, the catalyst layer including a metal element in the metal compound layer; growing a graphene layer on the catalyst layer; converting the catalyst layer into a portion of the metal compound layer; and forming at least one electrode on the graphene layer. Previously presented
The method of claim 1, wherein the metal element includes at least one of copper (Cu), cobalt (Co), and nickel (Ni). Original
The method of claim 1, wherein the graphene layer includes one of monolayer graphene and multilayer graphene. Original
A method of manufacturing a graphene electronic device, the method comprising: forming a first insulating layer on a first substrate; forming a catalyst layer on the first insulating layer, the catalyst layer including a metal element; forming a graphene layer on the catalyst layer to form a structure including the first substrate, the catalyst layer, and the graphene layer; attaching the structure to a second substrate such that the graphene layer is closer to the second substrate than the first substrate; removing the first insulating layer to separate the first substrate from the second substrate; and forming a metal compound layer by combining the metal element in the catalyst layer with another element. Original
The method of claim 7, wherein the metal element includes at least one of copper (Cu), cobalt (Co), and nickel (Ni). Original
The method of claim 7, wherein the graphene layer includes one of monolayer graphene and multilayer graphene. Original
A graphene electronic device comprising: a metal compound layer on a substrate; a planar graphene layer on the substrate in a direction substantially perpendicular to a longitudinal direction of the substrate; a gate electrode distinct from the substrate; and at least one electrode on the graphene layer, the graphene layer being between the at least one electrode and the substrate and between the at least one electrode and the metal compound layer in the direction substantially perpendicular to the longitudinal direction of the substrate, and directly in contact with the metal compound layer in an area overlapping the at least one electrode in the direction substantially perpendicular to the longitudinal direction of the substrate, wherein the metal compound layer is a single continuous layer, [[and]] includes a metal element configured to serve as a catalyst for growing the graphene layer and extends across an entire length of the graphene layer. Currently amended
The graphene electronic device of claim 14, wherein the metal element includes at least one of copper (Cu), cobalt (Co), and nickel (Ni). Original
The graphene electronic device of claim 14, wherein the graphene layer includes one of monolayer graphene and multilayer graphene. Original
Layer stacks claimed or described, ordered top of device to substrate.
top-gate graphene field-effect transistor (method 1)
graphene electronic device via transfer method (method 2)
Materials described outside the worked examples.
metal compound layer
graphene layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a schematic sectional view of a thin film transistor according to example embodiments. [21]
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,157,989Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic sectional view of a graphene electronic device according to example embodiments. [19]
FIG. 2 is a schematic sectional view illustrating a method of manufacturing the graphene electronic device shown in
FIG. 3 is a schematic sectional view of a thin film transistor according to example embodiments. [21]
FIG. 4 is a schematic sectional view of a graphene electronic device according to example embodiments. [22]
FIGS. 5 to 7 are schematic sectional views illustrating a method of manufacturing the graphene electronic device shown in
FIG. 6, the structure 500 formed as described above may be reversed and attached to a substrate 410. The attachment of the graphene layer 430 and the substrate …
FIG. 7, the sacrificial insulating layer 520 may be removed, for example, by wet etching, to separate the sacrificial substrate 510. Therefore, the catalyst …
FIG. 8 is a schematic sectional view of a thin film diode according to example embodiments. [24]
FIGS. 9 to 12 are schematic sectional views illustrating a method of manufacturing the thin film diode shown in F I G. 8.
FIG. 10, a subsidiary insulating layer 620 and a conductor layer (not shown) may be deposited in sequence on a substrate 610 regardless of the structure 700. …
FIG. 11, the structure 700 may be reversed and attached to the gate insulating layer 640, and the sacrificial insulating layer 720 may be removed to separate …
FIG. 12, the catalyst layer 730 may be converted into a metal compound layer 665 having a semiconductive property by a heat treatment. The metal compound layer …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of manufacturing a graphene electronic device, the method comprising: forming a metal compound layer and a catalyst layer on a substrate, the catalyst layer including a metal element in the metal compound layer; growing a graphene layer on the catalyst layer; converting the catalyst layer into a portion of the metal compound layer; and forming at least one electrode on the graphene layer. Previously presented
The method of claim 1, wherein the metal element includes at least one of copper (Cu), cobalt (Co), and nickel (Ni). Original
The method of claim 1, wherein the graphene layer includes one of monolayer graphene and multilayer graphene. Original
A method of manufacturing a graphene electronic device, the method comprising: forming a first insulating layer on a first substrate; forming a catalyst layer on the first insulating layer, the catalyst layer including a metal element; forming a graphene layer on the catalyst layer to form a structure including the first substrate, the catalyst layer, and the graphene layer; attaching the structure to a second substrate such that the graphene layer is closer to the second substrate than the first substrate; removing the first insulating layer to separate the first substrate from the second substrate; and forming a metal compound layer by combining the metal element in the catalyst layer with another element. Original
The method of claim 7, wherein the metal element includes at least one of copper (Cu), cobalt (Co), and nickel (Ni). Original
The method of claim 7, wherein the graphene layer includes one of monolayer graphene and multilayer graphene. Original
A graphene electronic device comprising: a metal compound layer on a substrate; a planar graphene layer on the substrate in a direction substantially perpendicular to a longitudinal direction of the substrate; a gate electrode distinct from the substrate; and at least one electrode on the graphene layer, the graphene layer being between the at least one electrode and the substrate and between the at least one electrode and the metal compound layer in the direction substantially perpendicular to the longitudinal direction of the substrate, and directly in contact with the metal compound layer in an area overlapping the at least one electrode in the direction substantially perpendicular to the longitudinal direction of the substrate, wherein the metal compound layer is a single continuous layer, [[and]] includes a metal element configured to serve as a catalyst for growing the graphene layer and extends across an entire length of the graphene layer. Currently amended
The graphene electronic device of claim 14, wherein the metal element includes at least one of copper (Cu), cobalt (Co), and nickel (Ni). Original
The graphene electronic device of claim 14, wherein the graphene layer includes one of monolayer graphene and multilayer graphene. Original
Layer stacks claimed or described, ordered top of device to substrate.
top-gate graphene field-effect transistor (method 1)
graphene electronic device via transfer method (method 2)
Materials described outside the worked examples.
metal compound layer
graphene layer
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a schematic sectional view of a thin film transistor according to example embodiments. [21]
Related documents with shared materials, methods, properties, or citations.
graphene electronic device with top gate
graphene electronic device with bottom gate
catalyst layer
copper
Cu
cobalt
Co
nickel
Ni
copper sulfide
CuS
dicopper sulfide
Cu₂S
copper(II) oxide
CuO
copper(I) oxide
Cu₂O
cobalt(II) oxide
CoO
nickel(II) oxide
NiO
cobalt suboxide
CoOx
silicon
Si
METHOD AND SYSTEM FOR PRODUCING GRAPHENE AND FUNCTIONALIZED GRAPHENE
graphene electronic device with top gate
graphene electronic device with bottom gate
catalyst layer
copper
Cu
cobalt
Co
nickel
Ni
copper sulfide
CuS
dicopper sulfide
Cu₂S
copper(II) oxide
CuO
copper(I) oxide
Cu₂O
cobalt(II) oxide
CoO
nickel(II) oxide
NiO
cobalt suboxide
CoOx
silicon
Si
METHOD AND SYSTEM FOR PRODUCING GRAPHENE AND FUNCTIONALIZED GRAPHENE
graphene electronic device with top gate
graphene electronic device with bottom gate
catalyst layer
copper
Cu
cobalt
Co
nickel
Ni
copper sulfide
CuS
dicopper sulfide
Cu₂S
copper(II) oxide
CuO
copper(I) oxide
Cu₂O
cobalt(II) oxide
CoO
nickel(II) oxide
NiO
cobalt suboxide
CoOx
silicon
Si
METHOD AND SYSTEM FOR PRODUCING GRAPHENE AND FUNCTIONALIZED GRAPHENE
graphene electronic device with top gate
graphene electronic device with bottom gate
catalyst layer
copper
Cu
cobalt
Co
nickel
Ni
copper sulfide
CuS
dicopper sulfide
Cu₂S
copper(II) oxide
CuO
copper(I) oxide
Cu₂O
cobalt(II) oxide
CoO
nickel(II) oxide
NiO
cobalt suboxide
CoOx
silicon
Si