Patent
US 10,224,405MULTILAYER GRAPHENE, METHOD OF FORMING THE SAME, DEVICE INCLUDING THE MULTILAYER GRAPHENE, AND METHOD OF MANUFACTURING THE DEVICE
Hyowon KIM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 10,224,405Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A- 1 F are cross-sectional views illustrating a method of forming a multilayer graphene, according to an exemplary embodiment; [00 38]
FIG. 2 is a diagram showing the energy band structure of a first bilayer graphene illustrated in
FIG. 3 is a perspective view of a multilayer graphene f o rmed according to the method according to the exemplary embodiment of
FIGS. 4A-4F are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [0041]
FIGS. 5A-5H illustrate and describe a method of forming the multilayer graphene 340 having a pnp structure, it will be understood by one of ordinary skill in …
FIGS. 6A-6D are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [0043]
FIGS. 7A-7 D are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [00 44]
FIG. 8 is a plan view of a multilayer graphene randomly f o rmed according to the method according to the exemplary embodiment of
FIGS. 9A-9F are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [00 46]
FIGS. 10A-10 C are perspective views illustrating a method of manufacturing a multilayer graphene, acc o rding to another exemplary embodiment. [0130] …
FIG. 11 is a plan view of a structure of a multilayer graphene according to an exemplary embodiment; [0048]
FIG. 12. For example, the first multilayer graphene 1 40 a and the second multilayer graphene 140 b of
FIG. 13A. The underlayer 172 0 may be a conductive layer (e.g., a metal layer), and the multilayer graphene 173 0 may be a semiconductor layer including a pn …
FIG. 14 C may be a transistor, and the multilayer graphene 1330 may be used as a channel layer in the transistor. The multilayer graphene 1330 may have a pnp …
FIG. 15 C may be a bottom-gate transistor, and the multilayer graphene 143 0 may be a channel layer in the bottom-gate transistor. The multilayer graphene 1430 …
FIGS. 16A-16C are cr o ss-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary embodiment. [0 …
FIGS. 17A and 17B are cr o ss-secti o nal views illustrating a meth o d of manufacturing a graphene-containing device, acc o rding to another exemplary …
FIG. 18 is a scanning tunneling microscopy (STM) image showing a Ni- do ped m ono layer graphene; [0055]
FIG. 19 is an STM image showing an n-type bilayer graphene manufactured acc o rding to an exemplary embodiment; and [0056]
FIGS. 20- 24 show chemical structures of various source gases that may be used to form a multilayer graphene in exemplary embodiments.
FIG. 21 shows the chemical structure of benzene (CH 6),
FIG. 22 shows the chemical structure of ethylene (C 2 H 4),
FIG. 23 shows the chemical structure of acetylene (C 2 H 2), and
FIG. 24 shows the chemical structure of triethylborane (GH 15 B). Materials as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a multilayer graphene, the method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; and forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the second multilayer graphene comprising a portion of the first graphene corresponding to the second area, wherein the first temperature is different from the second temperature.
The method of claim 1, wherein the first graphene is a monolayer graphene.
The method of claim 1, wherein one of the first multilayer graphene and the second multilayer graphene is a p-type multilayer graphene and the other one of the first multilayer graphene and the second multilayer graphene is an n-type multilayer graphene, and the first multilayer graphene and the second multilayer graphene form a pn junction.
The method of claim 1, wherein the first source gas is the same as the second source gas.
The method of claim 1, wherein the first source gas is different from the second source gas.
The method of claim 1, wherein the first multilayer graphene and the second multilayer graphene are both of a p-type conductive type or an n-type conductive type and have doping concentrations different from each other. 57
The method of claim 1, wherein the first multilayer graphene is formed using a first mask that exposes the first area of the first graphene, and 58 the second multilayer graphene is formed using a second mask that exposes the second area of the first graphene.
The method of claim 1, wherein the first and second multilayer graphenes are randomly distributed.
The method of claim 1, wherein the underlayer comprises a catalyst metal.
The method of claim 1, further comprising forming the underlayer by forming a first material layer on a substrate, and forming a plurality of underlayers spaced apart from one another by patterning the first material layer.
A method of forming a multilayer graphene, the method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; and forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the 59 second multilayer graphene comprising a portion of the first graphene corresponding to the second area, wherein the first source gas is different from the second source gas.
The method of claim 28, wherein the first graphene is a monolayer graphene.
The method of claim 28, wherein one of the first source gas and the second source gas comprises a first hydrocarbon compound and the other one of the first source gas and the second source gas comprises a second hydrocarbon compound, and the first hydrocarbon compound does not contain nitrogen (N), and the second hydrocarbon compound contains N.
A method of forming a multilayer graphene, the method comprising: forming a first graphene on an underlayer; and forming a multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the multilayer graphene comprising a portion of the first graphene corresponding to the first area, wherein a temperature used to form the first graphene is different from the first temperature, or a source gas used to form the first graphene is different from the first source gas.
The method of claim 37, wherein the multilayer graphene is a bilayer graphene. 61
The method of claim 37, wherein one of the first graphene and the multilayer graphene is a p-type multilayer graphene and the other one of the first graphene and the multilayer graphene is an n-type multilayer graphene, and the first graphene and the multilayer graphene form a pn junction.
A method of manufacturing a graphene-containing device, the method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the second multilayer graphene comprising a portion of the first graphene corresponding to the second area; and forming a device unit comprising the multilayer graphene, wherein the first temperature is different from the second temperature.
The method of claim 40, wherein the multilayer graphene is formed on a first substrate, and the device unit is formed on the second substrate after the multilayer graphene has been transferred from the first substrate to a second substrate. 62
The method of claim 40, wherein the multilayer graphene is formed on a first substrate, and the device unit is formed on the first substrate.
A graphene-containing device comprising a multilayer graphene formed by using a method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; and forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the second multilayer graphene comprising a portion of the first graphene corresponding to the second area, wherein the first temperature is different from the second temperature.
The graphene-containing device of claim 43, wherein the graphene- containing device is a diode, and the graphene-containing device comprises a first electrode connected to the first multilayer graphene and a second electrode connected to the second multilayer graphene.
The graphene-containing device of claim 43, wherein the graphene- containing device is a transistor, and 63 the multilayer graphene is a channel layer.
The graphene-containing device of claim 43, wherein the graphene- containing device comprises one of a tunneling device, a binary junction transistor (BJT), a barristor, a field effect transistor (FET), a memory device, a solar cell, a photodetector, a sensor, and a light-emitting device.
A graphene device comprising a multilayer graphene, the multilayer graphene comprising: an n-type multilayer graphene formed on a first area; and a p-type multilayer graphene formed on a second area adjacent to the first area, wherein the n-type multilayer graphene has a crystal structure in which some of carbon (C) atoms are replaced by first atoms, and the p-type multilayer graphene has a crystal structure including only C atoms or has a crystal structure in which a plurality of C atoms are replaced by second atoms different from the first atoms.
The graphene device of claim 48, wherein the multilayer graphene is a bilayer graphene. 64
The graphene device of claim 48, wherein the first atoms are N atoms.
A method of forming a defect-free junction between edge portions of graphene sheets comprising: forming a first graphene on an underlayer; forming a second graphene between the first graphene and the underlayer by exposing a first area of the first graphene to a first temperature above about 450 0C and a first source gas comprising a hydrocarbon compound; forming a third graphene between the first graphene and the underlayer by exposing a second area of the first graphene to a second temperature above about 450 0C and a second source gas comprising a hydrocarbon compound, wherein the third graphene is in direct contact with an edge portion of the second graphene, and wherein the second area of the first graphene does not include any of the first area of the first graphene.
Layer stacks claimed or described, ordered top of device to substrate.
graphene pn junction
graphene-containing device
Materials described outside the worked examples.
first graphene (monolayer graphene)
C
N-containing hydrocarbon compound
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a diagram showing the energy band structure of a first bilayer graphene illustrated in
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US 10,224,405Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A- 1 F are cross-sectional views illustrating a method of forming a multilayer graphene, according to an exemplary embodiment; [00 38]
FIG. 2 is a diagram showing the energy band structure of a first bilayer graphene illustrated in
FIG. 3 is a perspective view of a multilayer graphene f o rmed according to the method according to the exemplary embodiment of
FIGS. 4A-4F are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [0041]
FIGS. 5A-5H illustrate and describe a method of forming the multilayer graphene 340 having a pnp structure, it will be understood by one of ordinary skill in …
FIGS. 6A-6D are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [0043]
FIGS. 7A-7 D are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [00 44]
FIG. 8 is a plan view of a multilayer graphene randomly f o rmed according to the method according to the exemplary embodiment of
FIGS. 9A-9F are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [00 46]
FIGS. 10A-10 C are perspective views illustrating a method of manufacturing a multilayer graphene, acc o rding to another exemplary embodiment. [0130] …
FIG. 11 is a plan view of a structure of a multilayer graphene according to an exemplary embodiment; [0048]
FIG. 12. For example, the first multilayer graphene 1 40 a and the second multilayer graphene 140 b of
FIG. 13A. The underlayer 172 0 may be a conductive layer (e.g., a metal layer), and the multilayer graphene 173 0 may be a semiconductor layer including a pn …
FIG. 14 C may be a transistor, and the multilayer graphene 1330 may be used as a channel layer in the transistor. The multilayer graphene 1330 may have a pnp …
FIG. 15 C may be a bottom-gate transistor, and the multilayer graphene 143 0 may be a channel layer in the bottom-gate transistor. The multilayer graphene 1430 …
FIGS. 16A-16C are cr o ss-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary embodiment. [0 …
FIGS. 17A and 17B are cr o ss-secti o nal views illustrating a meth o d of manufacturing a graphene-containing device, acc o rding to another exemplary …
FIG. 18 is a scanning tunneling microscopy (STM) image showing a Ni- do ped m ono layer graphene; [0055]
FIG. 19 is an STM image showing an n-type bilayer graphene manufactured acc o rding to an exemplary embodiment; and [0056]
FIGS. 20- 24 show chemical structures of various source gases that may be used to form a multilayer graphene in exemplary embodiments.
FIG. 21 shows the chemical structure of benzene (CH 6),
FIG. 22 shows the chemical structure of ethylene (C 2 H 4),
FIG. 23 shows the chemical structure of acetylene (C 2 H 2), and
FIG. 24 shows the chemical structure of triethylborane (GH 15 B). Materials as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a multilayer graphene, the method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; and forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the second multilayer graphene comprising a portion of the first graphene corresponding to the second area, wherein the first temperature is different from the second temperature.
The method of claim 1, wherein the first graphene is a monolayer graphene.
The method of claim 1, wherein one of the first multilayer graphene and the second multilayer graphene is a p-type multilayer graphene and the other one of the first multilayer graphene and the second multilayer graphene is an n-type multilayer graphene, and the first multilayer graphene and the second multilayer graphene form a pn junction.
The method of claim 1, wherein the first source gas is the same as the second source gas.
The method of claim 1, wherein the first source gas is different from the second source gas.
The method of claim 1, wherein the first multilayer graphene and the second multilayer graphene are both of a p-type conductive type or an n-type conductive type and have doping concentrations different from each other. 57
The method of claim 1, wherein the first multilayer graphene is formed using a first mask that exposes the first area of the first graphene, and 58 the second multilayer graphene is formed using a second mask that exposes the second area of the first graphene.
The method of claim 1, wherein the first and second multilayer graphenes are randomly distributed.
The method of claim 1, wherein the underlayer comprises a catalyst metal.
The method of claim 1, further comprising forming the underlayer by forming a first material layer on a substrate, and forming a plurality of underlayers spaced apart from one another by patterning the first material layer.
A method of forming a multilayer graphene, the method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; and forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the 59 second multilayer graphene comprising a portion of the first graphene corresponding to the second area, wherein the first source gas is different from the second source gas.
The method of claim 28, wherein the first graphene is a monolayer graphene.
The method of claim 28, wherein one of the first source gas and the second source gas comprises a first hydrocarbon compound and the other one of the first source gas and the second source gas comprises a second hydrocarbon compound, and the first hydrocarbon compound does not contain nitrogen (N), and the second hydrocarbon compound contains N.
A method of forming a multilayer graphene, the method comprising: forming a first graphene on an underlayer; and forming a multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the multilayer graphene comprising a portion of the first graphene corresponding to the first area, wherein a temperature used to form the first graphene is different from the first temperature, or a source gas used to form the first graphene is different from the first source gas.
The method of claim 37, wherein the multilayer graphene is a bilayer graphene. 61
The method of claim 37, wherein one of the first graphene and the multilayer graphene is a p-type multilayer graphene and the other one of the first graphene and the multilayer graphene is an n-type multilayer graphene, and the first graphene and the multilayer graphene form a pn junction.
A method of manufacturing a graphene-containing device, the method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the second multilayer graphene comprising a portion of the first graphene corresponding to the second area; and forming a device unit comprising the multilayer graphene, wherein the first temperature is different from the second temperature.
The method of claim 40, wherein the multilayer graphene is formed on a first substrate, and the device unit is formed on the second substrate after the multilayer graphene has been transferred from the first substrate to a second substrate. 62
The method of claim 40, wherein the multilayer graphene is formed on a first substrate, and the device unit is formed on the first substrate.
A graphene-containing device comprising a multilayer graphene formed by using a method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; and forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the second multilayer graphene comprising a portion of the first graphene corresponding to the second area, wherein the first temperature is different from the second temperature.
The graphene-containing device of claim 43, wherein the graphene- containing device is a diode, and the graphene-containing device comprises a first electrode connected to the first multilayer graphene and a second electrode connected to the second multilayer graphene.
The graphene-containing device of claim 43, wherein the graphene- containing device is a transistor, and 63 the multilayer graphene is a channel layer.
The graphene-containing device of claim 43, wherein the graphene- containing device comprises one of a tunneling device, a binary junction transistor (BJT), a barristor, a field effect transistor (FET), a memory device, a solar cell, a photodetector, a sensor, and a light-emitting device.
A graphene device comprising a multilayer graphene, the multilayer graphene comprising: an n-type multilayer graphene formed on a first area; and a p-type multilayer graphene formed on a second area adjacent to the first area, wherein the n-type multilayer graphene has a crystal structure in which some of carbon (C) atoms are replaced by first atoms, and the p-type multilayer graphene has a crystal structure including only C atoms or has a crystal structure in which a plurality of C atoms are replaced by second atoms different from the first atoms.
The graphene device of claim 48, wherein the multilayer graphene is a bilayer graphene. 64
The graphene device of claim 48, wherein the first atoms are N atoms.
A method of forming a defect-free junction between edge portions of graphene sheets comprising: forming a first graphene on an underlayer; forming a second graphene between the first graphene and the underlayer by exposing a first area of the first graphene to a first temperature above about 450 0C and a first source gas comprising a hydrocarbon compound; forming a third graphene between the first graphene and the underlayer by exposing a second area of the first graphene to a second temperature above about 450 0C and a second source gas comprising a hydrocarbon compound, wherein the third graphene is in direct contact with an edge portion of the second graphene, and wherein the second area of the first graphene does not include any of the first area of the first graphene.
Layer stacks claimed or described, ordered top of device to substrate.
graphene pn junction
graphene-containing device
Materials described outside the worked examples.
first graphene (monolayer graphene)
C
N-containing hydrocarbon compound
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a diagram showing the energy band structure of a first bilayer graphene illustrated in
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US 10,224,405Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A- 1 F are cross-sectional views illustrating a method of forming a multilayer graphene, according to an exemplary embodiment; [00 38]
FIG. 2 is a diagram showing the energy band structure of a first bilayer graphene illustrated in
FIG. 3 is a perspective view of a multilayer graphene f o rmed according to the method according to the exemplary embodiment of
FIGS. 4A-4F are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [0041]
FIGS. 5A-5H illustrate and describe a method of forming the multilayer graphene 340 having a pnp structure, it will be understood by one of ordinary skill in …
FIGS. 6A-6D are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [0043]
FIGS. 7A-7 D are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [00 44]
FIG. 8 is a plan view of a multilayer graphene randomly f o rmed according to the method according to the exemplary embodiment of
FIGS. 9A-9F are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [00 46]
FIGS. 10A-10 C are perspective views illustrating a method of manufacturing a multilayer graphene, acc o rding to another exemplary embodiment. [0130] …
FIG. 11 is a plan view of a structure of a multilayer graphene according to an exemplary embodiment; [0048]
FIG. 12. For example, the first multilayer graphene 1 40 a and the second multilayer graphene 140 b of
FIG. 13A. The underlayer 172 0 may be a conductive layer (e.g., a metal layer), and the multilayer graphene 173 0 may be a semiconductor layer including a pn …
FIG. 14 C may be a transistor, and the multilayer graphene 1330 may be used as a channel layer in the transistor. The multilayer graphene 1330 may have a pnp …
FIG. 15 C may be a bottom-gate transistor, and the multilayer graphene 143 0 may be a channel layer in the bottom-gate transistor. The multilayer graphene 1430 …
FIGS. 16A-16C are cr o ss-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary embodiment. [0 …
FIGS. 17A and 17B are cr o ss-secti o nal views illustrating a meth o d of manufacturing a graphene-containing device, acc o rding to another exemplary …
FIG. 18 is a scanning tunneling microscopy (STM) image showing a Ni- do ped m ono layer graphene; [0055]
FIG. 19 is an STM image showing an n-type bilayer graphene manufactured acc o rding to an exemplary embodiment; and [0056]
FIGS. 20- 24 show chemical structures of various source gases that may be used to form a multilayer graphene in exemplary embodiments.
FIG. 21 shows the chemical structure of benzene (CH 6),
FIG. 22 shows the chemical structure of ethylene (C 2 H 4),
FIG. 23 shows the chemical structure of acetylene (C 2 H 2), and
FIG. 24 shows the chemical structure of triethylborane (GH 15 B). Materials as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a multilayer graphene, the method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; and forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the second multilayer graphene comprising a portion of the first graphene corresponding to the second area, wherein the first temperature is different from the second temperature.
The method of claim 1, wherein the first graphene is a monolayer graphene.
The method of claim 1, wherein one of the first multilayer graphene and the second multilayer graphene is a p-type multilayer graphene and the other one of the first multilayer graphene and the second multilayer graphene is an n-type multilayer graphene, and the first multilayer graphene and the second multilayer graphene form a pn junction.
The method of claim 1, wherein the first source gas is the same as the second source gas.
The method of claim 1, wherein the first source gas is different from the second source gas.
The method of claim 1, wherein the first multilayer graphene and the second multilayer graphene are both of a p-type conductive type or an n-type conductive type and have doping concentrations different from each other. 57
The method of claim 1, wherein the first multilayer graphene is formed using a first mask that exposes the first area of the first graphene, and 58 the second multilayer graphene is formed using a second mask that exposes the second area of the first graphene.
The method of claim 1, wherein the first and second multilayer graphenes are randomly distributed.
The method of claim 1, wherein the underlayer comprises a catalyst metal.
The method of claim 1, further comprising forming the underlayer by forming a first material layer on a substrate, and forming a plurality of underlayers spaced apart from one another by patterning the first material layer.
A method of forming a multilayer graphene, the method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; and forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the 59 second multilayer graphene comprising a portion of the first graphene corresponding to the second area, wherein the first source gas is different from the second source gas.
The method of claim 28, wherein the first graphene is a monolayer graphene.
The method of claim 28, wherein one of the first source gas and the second source gas comprises a first hydrocarbon compound and the other one of the first source gas and the second source gas comprises a second hydrocarbon compound, and the first hydrocarbon compound does not contain nitrogen (N), and the second hydrocarbon compound contains N.
A method of forming a multilayer graphene, the method comprising: forming a first graphene on an underlayer; and forming a multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the multilayer graphene comprising a portion of the first graphene corresponding to the first area, wherein a temperature used to form the first graphene is different from the first temperature, or a source gas used to form the first graphene is different from the first source gas.
The method of claim 37, wherein the multilayer graphene is a bilayer graphene. 61
The method of claim 37, wherein one of the first graphene and the multilayer graphene is a p-type multilayer graphene and the other one of the first graphene and the multilayer graphene is an n-type multilayer graphene, and the first graphene and the multilayer graphene form a pn junction.
A method of manufacturing a graphene-containing device, the method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the second multilayer graphene comprising a portion of the first graphene corresponding to the second area; and forming a device unit comprising the multilayer graphene, wherein the first temperature is different from the second temperature.
The method of claim 40, wherein the multilayer graphene is formed on a first substrate, and the device unit is formed on the second substrate after the multilayer graphene has been transferred from the first substrate to a second substrate. 62
The method of claim 40, wherein the multilayer graphene is formed on a first substrate, and the device unit is formed on the first substrate.
A graphene-containing device comprising a multilayer graphene formed by using a method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; and forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the second multilayer graphene comprising a portion of the first graphene corresponding to the second area, wherein the first temperature is different from the second temperature.
The graphene-containing device of claim 43, wherein the graphene- containing device is a diode, and the graphene-containing device comprises a first electrode connected to the first multilayer graphene and a second electrode connected to the second multilayer graphene.
The graphene-containing device of claim 43, wherein the graphene- containing device is a transistor, and 63 the multilayer graphene is a channel layer.
The graphene-containing device of claim 43, wherein the graphene- containing device comprises one of a tunneling device, a binary junction transistor (BJT), a barristor, a field effect transistor (FET), a memory device, a solar cell, a photodetector, a sensor, and a light-emitting device.
A graphene device comprising a multilayer graphene, the multilayer graphene comprising: an n-type multilayer graphene formed on a first area; and a p-type multilayer graphene formed on a second area adjacent to the first area, wherein the n-type multilayer graphene has a crystal structure in which some of carbon (C) atoms are replaced by first atoms, and the p-type multilayer graphene has a crystal structure including only C atoms or has a crystal structure in which a plurality of C atoms are replaced by second atoms different from the first atoms.
The graphene device of claim 48, wherein the multilayer graphene is a bilayer graphene. 64
The graphene device of claim 48, wherein the first atoms are N atoms.
A method of forming a defect-free junction between edge portions of graphene sheets comprising: forming a first graphene on an underlayer; forming a second graphene between the first graphene and the underlayer by exposing a first area of the first graphene to a first temperature above about 450 0C and a first source gas comprising a hydrocarbon compound; forming a third graphene between the first graphene and the underlayer by exposing a second area of the first graphene to a second temperature above about 450 0C and a second source gas comprising a hydrocarbon compound, wherein the third graphene is in direct contact with an edge portion of the second graphene, and wherein the second area of the first graphene does not include any of the first area of the first graphene.
Layer stacks claimed or described, ordered top of device to substrate.
graphene pn junction
graphene-containing device
Materials described outside the worked examples.
first graphene (monolayer graphene)
C
N-containing hydrocarbon compound
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a diagram showing the energy band structure of a first bilayer graphene illustrated in
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US 10,224,405Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1A- 1 F are cross-sectional views illustrating a method of forming a multilayer graphene, according to an exemplary embodiment; [00 38]
FIG. 2 is a diagram showing the energy band structure of a first bilayer graphene illustrated in
FIG. 3 is a perspective view of a multilayer graphene f o rmed according to the method according to the exemplary embodiment of
FIGS. 4A-4F are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [0041]
FIGS. 5A-5H illustrate and describe a method of forming the multilayer graphene 340 having a pnp structure, it will be understood by one of ordinary skill in …
FIGS. 6A-6D are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [0043]
FIGS. 7A-7 D are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [00 44]
FIG. 8 is a plan view of a multilayer graphene randomly f o rmed according to the method according to the exemplary embodiment of
FIGS. 9A-9F are cross-sectional views illustrating a method of manufacturing a multilayer graphene, according to another exemplary embodiment; [00 46]
FIGS. 10A-10 C are perspective views illustrating a method of manufacturing a multilayer graphene, acc o rding to another exemplary embodiment. [0130] …
FIG. 11 is a plan view of a structure of a multilayer graphene according to an exemplary embodiment; [0048]
FIG. 12. For example, the first multilayer graphene 1 40 a and the second multilayer graphene 140 b of
FIG. 13A. The underlayer 172 0 may be a conductive layer (e.g., a metal layer), and the multilayer graphene 173 0 may be a semiconductor layer including a pn …
FIG. 14 C may be a transistor, and the multilayer graphene 1330 may be used as a channel layer in the transistor. The multilayer graphene 1330 may have a pnp …
FIG. 15 C may be a bottom-gate transistor, and the multilayer graphene 143 0 may be a channel layer in the bottom-gate transistor. The multilayer graphene 1430 …
FIGS. 16A-16C are cr o ss-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary embodiment. [0 …
FIGS. 17A and 17B are cr o ss-secti o nal views illustrating a meth o d of manufacturing a graphene-containing device, acc o rding to another exemplary …
FIG. 18 is a scanning tunneling microscopy (STM) image showing a Ni- do ped m ono layer graphene; [0055]
FIG. 19 is an STM image showing an n-type bilayer graphene manufactured acc o rding to an exemplary embodiment; and [0056]
FIGS. 20- 24 show chemical structures of various source gases that may be used to form a multilayer graphene in exemplary embodiments.
FIG. 21 shows the chemical structure of benzene (CH 6),
FIG. 22 shows the chemical structure of ethylene (C 2 H 4),
FIG. 23 shows the chemical structure of acetylene (C 2 H 2), and
FIG. 24 shows the chemical structure of triethylborane (GH 15 B). Materials as shown in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a multilayer graphene, the method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; and forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the second multilayer graphene comprising a portion of the first graphene corresponding to the second area, wherein the first temperature is different from the second temperature.
The method of claim 1, wherein the first graphene is a monolayer graphene.
The method of claim 1, wherein one of the first multilayer graphene and the second multilayer graphene is a p-type multilayer graphene and the other one of the first multilayer graphene and the second multilayer graphene is an n-type multilayer graphene, and the first multilayer graphene and the second multilayer graphene form a pn junction.
The method of claim 1, wherein the first source gas is the same as the second source gas.
The method of claim 1, wherein the first source gas is different from the second source gas.
The method of claim 1, wherein the first multilayer graphene and the second multilayer graphene are both of a p-type conductive type or an n-type conductive type and have doping concentrations different from each other. 57
The method of claim 1, wherein the first multilayer graphene is formed using a first mask that exposes the first area of the first graphene, and 58 the second multilayer graphene is formed using a second mask that exposes the second area of the first graphene.
The method of claim 1, wherein the first and second multilayer graphenes are randomly distributed.
The method of claim 1, wherein the underlayer comprises a catalyst metal.
The method of claim 1, further comprising forming the underlayer by forming a first material layer on a substrate, and forming a plurality of underlayers spaced apart from one another by patterning the first material layer.
A method of forming a multilayer graphene, the method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; and forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the 59 second multilayer graphene comprising a portion of the first graphene corresponding to the second area, wherein the first source gas is different from the second source gas.
The method of claim 28, wherein the first graphene is a monolayer graphene.
The method of claim 28, wherein one of the first source gas and the second source gas comprises a first hydrocarbon compound and the other one of the first source gas and the second source gas comprises a second hydrocarbon compound, and the first hydrocarbon compound does not contain nitrogen (N), and the second hydrocarbon compound contains N.
A method of forming a multilayer graphene, the method comprising: forming a first graphene on an underlayer; and forming a multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the multilayer graphene comprising a portion of the first graphene corresponding to the first area, wherein a temperature used to form the first graphene is different from the first temperature, or a source gas used to form the first graphene is different from the first source gas.
The method of claim 37, wherein the multilayer graphene is a bilayer graphene. 61
The method of claim 37, wherein one of the first graphene and the multilayer graphene is a p-type multilayer graphene and the other one of the first graphene and the multilayer graphene is an n-type multilayer graphene, and the first graphene and the multilayer graphene form a pn junction.
A method of manufacturing a graphene-containing device, the method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the second multilayer graphene comprising a portion of the first graphene corresponding to the second area; and forming a device unit comprising the multilayer graphene, wherein the first temperature is different from the second temperature.
The method of claim 40, wherein the multilayer graphene is formed on a first substrate, and the device unit is formed on the second substrate after the multilayer graphene has been transferred from the first substrate to a second substrate. 62
The method of claim 40, wherein the multilayer graphene is formed on a first substrate, and the device unit is formed on the first substrate.
A graphene-containing device comprising a multilayer graphene formed by using a method comprising: forming a first graphene on an underlayer; forming a first multilayer graphene on a first area of the first graphene at a first temperature by using a first source gas, the first multilayer graphene comprising a portion of the first graphene corresponding to the first area; and forming a second multilayer graphene on a second area of the first graphene adjacent to the first area at a second temperature by using a second source gas, the second multilayer graphene comprising a portion of the first graphene corresponding to the second area, wherein the first temperature is different from the second temperature.
The graphene-containing device of claim 43, wherein the graphene- containing device is a diode, and the graphene-containing device comprises a first electrode connected to the first multilayer graphene and a second electrode connected to the second multilayer graphene.
The graphene-containing device of claim 43, wherein the graphene- containing device is a transistor, and 63 the multilayer graphene is a channel layer.
The graphene-containing device of claim 43, wherein the graphene- containing device comprises one of a tunneling device, a binary junction transistor (BJT), a barristor, a field effect transistor (FET), a memory device, a solar cell, a photodetector, a sensor, and a light-emitting device.
A graphene device comprising a multilayer graphene, the multilayer graphene comprising: an n-type multilayer graphene formed on a first area; and a p-type multilayer graphene formed on a second area adjacent to the first area, wherein the n-type multilayer graphene has a crystal structure in which some of carbon (C) atoms are replaced by first atoms, and the p-type multilayer graphene has a crystal structure including only C atoms or has a crystal structure in which a plurality of C atoms are replaced by second atoms different from the first atoms.
The graphene device of claim 48, wherein the multilayer graphene is a bilayer graphene. 64
The graphene device of claim 48, wherein the first atoms are N atoms.
A method of forming a defect-free junction between edge portions of graphene sheets comprising: forming a first graphene on an underlayer; forming a second graphene between the first graphene and the underlayer by exposing a first area of the first graphene to a first temperature above about 450 0C and a first source gas comprising a hydrocarbon compound; forming a third graphene between the first graphene and the underlayer by exposing a second area of the first graphene to a second temperature above about 450 0C and a second source gas comprising a hydrocarbon compound, wherein the third graphene is in direct contact with an edge portion of the second graphene, and wherein the second area of the first graphene does not include any of the first area of the first graphene.
Layer stacks claimed or described, ordered top of device to substrate.
graphene pn junction
graphene-containing device
Materials described outside the worked examples.
first graphene (monolayer graphene)
C
N-containing hydrocarbon compound
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a diagram showing the energy band structure of a first bilayer graphene illustrated in
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FIGS. 5A-5H illustrate and describe a method of forming the multilayer graphene 340 having a pnp structure, it will be understood by one of ordinary skill in …
FIG. 14 C may be a transistor, and the multilayer graphene 1330 may be used as a channel layer in the transistor. The multilayer graphene 1330 may have a pnp …
FIG. 14 C may be a transistor, and the multilayer graphene 1330 may be used as a channel layer in the transistor. The multilayer graphene 1330 may have a pnp …
FIG. 15 C may be a bottom-gate transistor, and the multilayer graphene 143 0 may be a channel layer in the bottom-gate transistor. The multilayer graphene 1430 …
FIGS. 16A-16C are cr o ss-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary embodiment. [0 …
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FIGS. 5A-5H illustrate and describe a method of forming the multilayer graphene 340 having a pnp structure, it will be understood by one of ordinary skill in …
FIG. 14 C may be a transistor, and the multilayer graphene 1330 may be used as a channel layer in the transistor. The multilayer graphene 1330 may have a pnp …
FIG. 14 C may be a transistor, and the multilayer graphene 1330 may be used as a channel layer in the transistor. The multilayer graphene 1330 may have a pnp …
FIG. 15 C may be a bottom-gate transistor, and the multilayer graphene 143 0 may be a channel layer in the bottom-gate transistor. The multilayer graphene 1430 …
FIGS. 16A-16C are cr o ss-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary embodiment. [0 …
graphene diode
graphene transistor
graphene device with n-type and p-type multilayer graphene
pyridine
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hydrocarbon compound (no nitrogen)
catalyst metal underlayer
platinum
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gold
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benzene
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ethylene
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acetylene
C₂H₂
triethylborane
C₆H₁₅B
FIGS. 5A-5H illustrate and describe a method of forming the multilayer graphene 340 having a pnp structure, it will be understood by one of ordinary skill in …
FIG. 14 C may be a transistor, and the multilayer graphene 1330 may be used as a channel layer in the transistor. The multilayer graphene 1330 may have a pnp …
FIG. 14 C may be a transistor, and the multilayer graphene 1330 may be used as a channel layer in the transistor. The multilayer graphene 1330 may have a pnp …
FIG. 15 C may be a bottom-gate transistor, and the multilayer graphene 143 0 may be a channel layer in the bottom-gate transistor. The multilayer graphene 1430 …
FIGS. 16A-16C are cr o ss-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary embodiment. [0 …
graphene diode
graphene transistor
graphene device with n-type and p-type multilayer graphene
pyridine
C₅H₅N
hydrocarbon compound (no nitrogen)
catalyst metal underlayer
platinum
Pt
gold
Au
benzene
C₆H₆
ethylene
C₂H₄
acetylene
C₂H₂
triethylborane
C₆H₁₅B
FIGS. 5A-5H illustrate and describe a method of forming the multilayer graphene 340 having a pnp structure, it will be understood by one of ordinary skill in …
FIG. 14 C may be a transistor, and the multilayer graphene 1330 may be used as a channel layer in the transistor. The multilayer graphene 1330 may have a pnp …
FIG. 14 C may be a transistor, and the multilayer graphene 1330 may be used as a channel layer in the transistor. The multilayer graphene 1330 may have a pnp …
FIG. 15 C may be a bottom-gate transistor, and the multilayer graphene 143 0 may be a channel layer in the bottom-gate transistor. The multilayer graphene 1430 …
FIGS. 16A-16C are cr o ss-sectional views illustrating a method of manufacturing a graphene-containing device, according to another exemplary embodiment. [0 …