Quantum valley Hall states in low-buckled counterparts of graphene bilayer

Yu-Hao Shen; Jun-Ding Zheng; Wen-Yi Tong; Zhi-Qiang Bao; Xian-Gang Wan; Chun-Gang Duan

doi:10.1103/PhysRevB.111.075421

Paper

Atlas literature

Research paper

TheoreticalComputed Band Structure

Quantum valley Hall states in low-buckled counterparts of graphene bilayer

Yu-Hao Shen, Jun-Ding Zheng, Wen-Yi Tong, Zhi-Qiang Bao et al.

2024·10.1103/PhysRevB.111.075421·arXiv:2403.13277

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Generic AA-stacked low-buckled bilayer model used for tight-binding calculations of valley Hall phase transition.

1 characterization4 properties1 figure

SimulatedAA-stacked low-buckled bilayer silicene-family systemSimulated Alloy

Twisted low-buckled germanene bilayer model used to demonstrate moire-induced band inversion and edge states.

1 property

Simulatedtwisted van der Waals bilayer silicene-family systemSimulated AlloyGeStudied Material

Quantum valley Hall states in low-buckled counterparts of graphene bilayer | Matter42 Literature

Quantum valley Hall states in low-buckled counterparts of graphene bilayer

Samples

Generic AA-stacked low-buckled bilayer model used for tight-binding calculations of valley Hall phase transition.

Twisted low-buckled germanene bilayer model used to demonstrate moire-induced band inversion and edge states.

Quantum valley Hall states in low-buckled counterparts of graphene bilayer

Samples

Generic AA-stacked low-buckled bilayer model used for tight-binding calculations of valley Hall phase transition.

Twisted low-buckled germanene bilayer model used to demonstrate moire-induced band inversion and edge states.

Quantum valley Hall states in low-buckled counterparts of graphene bilayer

Samples

Generic AA-stacked low-buckled bilayer model used for tight-binding calculations of valley Hall phase transition.

Twisted low-buckled germanene bilayer model used to demonstrate moire-induced band inversion and edge states.

Quantum valley Hall states in low-buckled counterparts of graphene bilayer

Samples

Generic AA-stacked low-buckled bilayer model used for tight-binding calculations of valley Hall phase transition.

Twisted low-buckled germanene bilayer model used to demonstrate moire-induced band inversion and edge states.

Quantum valley Hall states in low-buckled counterparts of graphene bilayer

Samples

Generic AA-stacked low-buckled bilayer model used for tight-binding calculations of valley Hall phase transition.

Twisted low-buckled germanene bilayer model used to demonstrate moire-induced band inversion and edge states.

Quantum valley Hall states in low-buckled counterparts of graphene bilayer

Samples

Generic AA-stacked low-buckled bilayer model used for tight-binding calculations of valley Hall phase transition.

Twisted low-buckled germanene bilayer model used to demonstrate moire-induced band inversion and edge states.

Quantum valley Hall states in low-buckled counterparts of graphene bilayer

Samples

Generic AA-stacked low-buckled bilayer model used for tight-binding calculations of valley Hall phase transition.

Twisted low-buckled germanene bilayer model used to demonstrate moire-induced band inversion and edge states.

Quantum valley Hall states in low-buckled counterparts of graphene bilayer

Samples

Generic AA-stacked low-buckled bilayer model used for tight-binding calculations of valley Hall phase transition.

Twisted low-buckled germanene bilayer model used to demonstrate moire-induced band inversion and edge states.

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