Patent
US 9,281,385SEMICONDUCTING GRAPHENE COMPOSITION, AND ELECTRICAL DEVICE INCLUDING THE SAME
Hyeon-jin SHIN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,281,385Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph of energy (E, electron volts) versus wavenumber (k, 1/nanometers) and is a band diagram of graphene; [0011]
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0012]
FIG. 3 illustrate an optical transparency of a graphene monolayer obtained according to a preparation example 1. [0013]
FIGS. 4A through
FIG. 5A.
FIG. 6A.
FIG. 7B illustrate an embodiment of a process of disposing sodium on a graphene monolayer according to Example 1; and [0014]
FIG. 8 shows band gap evaluation results of a sodium-containing graphene composition prepared according to Example 1.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene composition comprising: a planar-shaped molecular structure consisting of a graphene monolayer having a planer structure; and an alkali metal disposed on the graphene monolayer, wherein the alkali metal is in the form of at least one selected from the group consisting of a continuous thin film, a nanorod, and a nanocluster.
The graphene composition of claim 1, wherein the alkali metal comprises at least one element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, and francium.
The graphene composition of claim 1, wherein the alkali metal is sodium.
The graphene composition of claim 1, wherein the alkali metal is disposed on at least one surface of the graphene monolayer.
The graphene composition of claim 1, wherein the alkali metal has a 2-dimensional thin film structure.
The graphene composition of claim 1, wherein the alkali metal is in the form of a continuous thin film having a thickness of about 2 to about 200 angstroms.
The graphene composition of claim 1, wherein the alkali metal occupies about 30 to about 99 percent of an entire surface of the graphene monolayer.
The graphene composition of claim 1, wherein the alkali metal occupies about 50 to about percent of an entire surface of the graphene monolayer.
The graphene composition of claim 1, wherein the composition has a band gap of about 0.4 electron volt or more.
The graphene composition of claim 1, wherein the graphene composition has a band gap of about 0.45 electron volt to about 0.8 electron volt.
The graphene composition of claim 1, wherein the graphene composition has a band gap of about 0.6 electron volt to about 0.8 electron volt.
The graphene composition of claim 1, wherein the graphene monolayer has an area of 1 square centimeter or more.
The graphene composition of claim 1, wherein the graphene monolayer has 10 or fewer wrinkles per 1000 square micrometers area.
The graphene composition of claim 1, wherein a purity of the graphene monolayer is about 99 percent or more.
The graphene composition of claim 1, wherein a substrate is f u rther disposed under the graphene monolayer.
An electrical device comprising the graphene composition of claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
graphene composition
electrical device incorporating graphene composition
Materials described outside the worked examples.
graphene monolayer
alkali metal
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a graph of energy (E, electron volts) versus wavenumber (k, 1/nanometers) and is a band diagram of graphene; [0011]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
band gap of graphene composition with alkali metal | ≥ 0.4 eV | graphene monolayer |
band gap range of graphene composition (embodiment) | 0.45–0.8 eV |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED SWITCHING ELEMENTS USING A DIAMOND-SHAPED NANO-PATCH AND INTERCONNECTING NANO-RIBBONS
GRAPHENE SEMICONDUCTOR AND ELECTRICAL DEVICE INCLUDING THE SAME
Patent
Atlas literature
Patent
US 9,281,385Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph of energy (E, electron volts) versus wavenumber (k, 1/nanometers) and is a band diagram of graphene; [0011]
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0012]
FIG. 3 illustrate an optical transparency of a graphene monolayer obtained according to a preparation example 1. [0013]
FIGS. 4A through
FIG. 5A.
FIG. 6A.
FIG. 7B illustrate an embodiment of a process of disposing sodium on a graphene monolayer according to Example 1; and [0014]
FIG. 8 shows band gap evaluation results of a sodium-containing graphene composition prepared according to Example 1.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene composition comprising: a planar-shaped molecular structure consisting of a graphene monolayer having a planer structure; and an alkali metal disposed on the graphene monolayer, wherein the alkali metal is in the form of at least one selected from the group consisting of a continuous thin film, a nanorod, and a nanocluster.
The graphene composition of claim 1, wherein the alkali metal comprises at least one element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, and francium.
The graphene composition of claim 1, wherein the alkali metal is sodium.
The graphene composition of claim 1, wherein the alkali metal is disposed on at least one surface of the graphene monolayer.
The graphene composition of claim 1, wherein the alkali metal has a 2-dimensional thin film structure.
The graphene composition of claim 1, wherein the alkali metal is in the form of a continuous thin film having a thickness of about 2 to about 200 angstroms.
The graphene composition of claim 1, wherein the alkali metal occupies about 30 to about 99 percent of an entire surface of the graphene monolayer.
The graphene composition of claim 1, wherein the alkali metal occupies about 50 to about percent of an entire surface of the graphene monolayer.
The graphene composition of claim 1, wherein the composition has a band gap of about 0.4 electron volt or more.
The graphene composition of claim 1, wherein the graphene composition has a band gap of about 0.45 electron volt to about 0.8 electron volt.
The graphene composition of claim 1, wherein the graphene composition has a band gap of about 0.6 electron volt to about 0.8 electron volt.
The graphene composition of claim 1, wherein the graphene monolayer has an area of 1 square centimeter or more.
The graphene composition of claim 1, wherein the graphene monolayer has 10 or fewer wrinkles per 1000 square micrometers area.
The graphene composition of claim 1, wherein a purity of the graphene monolayer is about 99 percent or more.
The graphene composition of claim 1, wherein a substrate is f u rther disposed under the graphene monolayer.
An electrical device comprising the graphene composition of claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
graphene composition
electrical device incorporating graphene composition
Materials described outside the worked examples.
graphene monolayer
alkali metal
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a graph of energy (E, electron volts) versus wavenumber (k, 1/nanometers) and is a band diagram of graphene; [0011]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
band gap of graphene composition with alkali metal | ≥ 0.4 eV | graphene monolayer |
band gap range of graphene composition (embodiment) | 0.45–0.8 eV |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED SWITCHING ELEMENTS USING A DIAMOND-SHAPED NANO-PATCH AND INTERCONNECTING NANO-RIBBONS
GRAPHENE SEMICONDUCTOR AND ELECTRICAL DEVICE INCLUDING THE SAME
Patent
Atlas literature
Patent
US 9,281,385Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph of energy (E, electron volts) versus wavenumber (k, 1/nanometers) and is a band diagram of graphene; [0011]
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0012]
FIG. 3 illustrate an optical transparency of a graphene monolayer obtained according to a preparation example 1. [0013]
FIGS. 4A through
FIG. 5A.
FIG. 6A.
FIG. 7B illustrate an embodiment of a process of disposing sodium on a graphene monolayer according to Example 1; and [0014]
FIG. 8 shows band gap evaluation results of a sodium-containing graphene composition prepared according to Example 1.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene composition comprising: a planar-shaped molecular structure consisting of a graphene monolayer having a planer structure; and an alkali metal disposed on the graphene monolayer, wherein the alkali metal is in the form of at least one selected from the group consisting of a continuous thin film, a nanorod, and a nanocluster.
The graphene composition of claim 1, wherein the alkali metal comprises at least one element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, and francium.
The graphene composition of claim 1, wherein the alkali metal is sodium.
The graphene composition of claim 1, wherein the alkali metal is disposed on at least one surface of the graphene monolayer.
The graphene composition of claim 1, wherein the alkali metal has a 2-dimensional thin film structure.
The graphene composition of claim 1, wherein the alkali metal is in the form of a continuous thin film having a thickness of about 2 to about 200 angstroms.
The graphene composition of claim 1, wherein the alkali metal occupies about 30 to about 99 percent of an entire surface of the graphene monolayer.
The graphene composition of claim 1, wherein the alkali metal occupies about 50 to about percent of an entire surface of the graphene monolayer.
The graphene composition of claim 1, wherein the composition has a band gap of about 0.4 electron volt or more.
The graphene composition of claim 1, wherein the graphene composition has a band gap of about 0.45 electron volt to about 0.8 electron volt.
The graphene composition of claim 1, wherein the graphene composition has a band gap of about 0.6 electron volt to about 0.8 electron volt.
The graphene composition of claim 1, wherein the graphene monolayer has an area of 1 square centimeter or more.
The graphene composition of claim 1, wherein the graphene monolayer has 10 or fewer wrinkles per 1000 square micrometers area.
The graphene composition of claim 1, wherein a purity of the graphene monolayer is about 99 percent or more.
The graphene composition of claim 1, wherein a substrate is f u rther disposed under the graphene monolayer.
An electrical device comprising the graphene composition of claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
graphene composition
electrical device incorporating graphene composition
Materials described outside the worked examples.
graphene monolayer
alkali metal
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a graph of energy (E, electron volts) versus wavenumber (k, 1/nanometers) and is a band diagram of graphene; [0011]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
band gap of graphene composition with alkali metal | ≥ 0.4 eV | graphene monolayer |
band gap range of graphene composition (embodiment) | 0.45–0.8 eV |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED SWITCHING ELEMENTS USING A DIAMOND-SHAPED NANO-PATCH AND INTERCONNECTING NANO-RIBBONS
GRAPHENE SEMICONDUCTOR AND ELECTRICAL DEVICE INCLUDING THE SAME
Patent
Atlas literature
Patent
US 9,281,385Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a graph of energy (E, electron volts) versus wavenumber (k, 1/nanometers) and is a band diagram of graphene; [0011]
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0012]
FIG. 3 illustrate an optical transparency of a graphene monolayer obtained according to a preparation example 1. [0013]
FIGS. 4A through
FIG. 5A.
FIG. 6A.
FIG. 7B illustrate an embodiment of a process of disposing sodium on a graphene monolayer according to Example 1; and [0014]
FIG. 8 shows band gap evaluation results of a sodium-containing graphene composition prepared according to Example 1.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene composition comprising: a planar-shaped molecular structure consisting of a graphene monolayer having a planer structure; and an alkali metal disposed on the graphene monolayer, wherein the alkali metal is in the form of at least one selected from the group consisting of a continuous thin film, a nanorod, and a nanocluster.
The graphene composition of claim 1, wherein the alkali metal comprises at least one element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, and francium.
The graphene composition of claim 1, wherein the alkali metal is sodium.
The graphene composition of claim 1, wherein the alkali metal is disposed on at least one surface of the graphene monolayer.
The graphene composition of claim 1, wherein the alkali metal has a 2-dimensional thin film structure.
The graphene composition of claim 1, wherein the alkali metal is in the form of a continuous thin film having a thickness of about 2 to about 200 angstroms.
The graphene composition of claim 1, wherein the alkali metal occupies about 30 to about 99 percent of an entire surface of the graphene monolayer.
The graphene composition of claim 1, wherein the alkali metal occupies about 50 to about percent of an entire surface of the graphene monolayer.
The graphene composition of claim 1, wherein the composition has a band gap of about 0.4 electron volt or more.
The graphene composition of claim 1, wherein the graphene composition has a band gap of about 0.45 electron volt to about 0.8 electron volt.
The graphene composition of claim 1, wherein the graphene composition has a band gap of about 0.6 electron volt to about 0.8 electron volt.
The graphene composition of claim 1, wherein the graphene monolayer has an area of 1 square centimeter or more.
The graphene composition of claim 1, wherein the graphene monolayer has 10 or fewer wrinkles per 1000 square micrometers area.
The graphene composition of claim 1, wherein a purity of the graphene monolayer is about 99 percent or more.
The graphene composition of claim 1, wherein a substrate is f u rther disposed under the graphene monolayer.
An electrical device comprising the graphene composition of claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
graphene composition
electrical device incorporating graphene composition
Materials described outside the worked examples.
graphene monolayer
alkali metal
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 is a graph of energy (E, electron volts) versus wavenumber (k, 1/nanometers) and is a band diagram of graphene; [0011]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
band gap of graphene composition with alkali metal | ≥ 0.4 eV | graphene monolayer |
band gap range of graphene composition (embodiment) | 0.45–0.8 eV |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED SWITCHING ELEMENTS USING A DIAMOND-SHAPED NANO-PATCH AND INTERCONNECTING NANO-RIBBONS
GRAPHENE SEMICONDUCTOR AND ELECTRICAL DEVICE INCLUDING THE SAME
sodium
Na
substrate
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0012]
FIG. 8 shows band gap evaluation results of a sodium-containing graphene composition prepared according to Example 1.
band gap range of graphene composition (more specific embodiment) | 0.6–0.8 eV | graphene monolayer |
Duration | 600–86400 s | — |
Duration | 1200–79200 s | — |
Duration | 1800–72000 s | — |
Thickness | 1–10 nm | — |
Thickness | 4–300 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Thickness | 2–200 Å | — |
Duration | 0.001–1000 hours | — |
Duration | 0.01–100 hours | — |
Pressure | 100–700 torr | — |
sodium
Na
substrate
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0012]
FIG. 8 shows band gap evaluation results of a sodium-containing graphene composition prepared according to Example 1.
band gap range of graphene composition (more specific embodiment) | 0.6–0.8 eV | graphene monolayer |
Duration | 600–86400 s | — |
Duration | 1200–79200 s | — |
Duration | 1800–72000 s | — |
Thickness | 1–10 nm | — |
Thickness | 4–300 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Thickness | 2–200 Å | — |
Duration | 0.001–1000 hours | — |
Duration | 0.01–100 hours | — |
Pressure | 100–700 torr | — |
sodium
Na
substrate
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0012]
FIG. 8 shows band gap evaluation results of a sodium-containing graphene composition prepared according to Example 1.
band gap range of graphene composition (more specific embodiment) | 0.6–0.8 eV | graphene monolayer |
Duration | 600–86400 s | — |
Duration | 1200–79200 s | — |
Duration | 1800–72000 s | — |
Thickness | 1–10 nm | — |
Thickness | 4–300 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Thickness | 2–200 Å | — |
Duration | 0.001–1000 hours | — |
Duration | 0.01–100 hours | — |
Pressure | 100–700 torr | — |
sodium
Na
substrate
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0012]
FIG. 8 shows band gap evaluation results of a sodium-containing graphene composition prepared according to Example 1.
band gap range of graphene composition (more specific embodiment) | 0.6–0.8 eV | graphene monolayer |
Duration | 600–86400 s | — |
Duration | 1200–79200 s | — |
Duration | 1800–72000 s | — |
Thickness | 1–10 nm | — |
Thickness | 4–300 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Thickness | 2–200 Å | — |
Duration | 0.001–1000 hours | — |
Duration | 0.01–100 hours | — |
Pressure | 100–700 torr | — |