Patent
US 9,722,122BORON, BISMUTH CO-DOPING OF GALLIUM ARSENIDE AND OTHER COMPOUNDS FOR PHOTONIC AND HETEROJUNCTION BIPOLAR TRANSISTOR DEVICES
Angelo MASCARENHAS
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,722,122Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatic cross-sectional view of a monolithic, quadruple junction, solar cell including a cell of co-doped GaAs:Bi:B; [0015]
FIG. 2 is a graphical illustration of a prior art direct bandgap with an acceptor dopant energy level; [0016]
FIG. 3 is a graphical illustration of a prior art direct bandgap with a donor dopant 10 energy level; [0017]
FIG. 4 is a graphical representation of a bandgap 40 of a semiconductor material that is co-doped with Boron and deep donor 48 (Bismuth) impurities; [0018]
FIG. 5 is a diagrammatic sectional view of a heterojunction bipolar transistor; and [0019]
FIG. 6 is a diagrammatic sectional view of a heterojunction bipolar transistor 15 according to this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A two-junction tandem solar cell comprising: a monolithic first cell comprising a substrate with a bandgap of about 1.1 eV and a first charge-doped p-n junction between a GaP window layer and a BSR layer of GaP:B:Bi; and a monolithic second cell adjacent to the first cell, the second cell comprising GaP that is isoelectronically co-doped with an acceptor element and a deep donor element to have an effective bandgap of about 1.75 eV and a second charge-doped p-n junction. 11. The solar cell of claim 10, further comprising a charge- doped tunnel junction between the first cell and the isoelectronically co-doped GaP second cell.
The solar cell of claim 10, wherein the BSR layer of GaP:B:Bi has a higher bandgap than the first p-n junction. 13. The solar cell of claim 11, further comprising a first conductive contact under the substrate and a second conductive contact located on the second cell.
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The solar cell of claim 28, wherein a content of the GaP:B:Bi crystal lattice is about 5 atomic percent B and about 2.2 atomic percent Bi.
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The solar cell of claim 11, wherein the acceptor element is B and the deep donor element is Bi to form an isoelectronically co-doped GaP:B:Bi crystal lattice that is lattice matched to the substrate. 3
Layer stacks claimed or described, ordered top of device to substrate.
two-junction tandem solar cell
monolithic quadruple junction solar cell
Materials described outside the worked examples.
GaP window layer
GaP
GaP:B:Bi
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graphical illustration of a prior art direct bandgap with an acceptor dopant energy level; [0016]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap of Ge first cell | 0.67 eV | Ge |
Related documents with shared materials, methods, properties, or citations.
Sb2S3 and GaAs Absorber Layer-based Quantum Dot Solar Cells with Cadmium Telluride-based HTL: A Comparative Study
Energy Effective Mass Dependence of Electron Tunneling Through CdS/CdSe, AlxGa1-xAs/GaAs and AlSb/InAs Multiple Quantum Barriers
Patent
Atlas literature
Patent
US 9,722,122Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatic cross-sectional view of a monolithic, quadruple junction, solar cell including a cell of co-doped GaAs:Bi:B; [0015]
FIG. 2 is a graphical illustration of a prior art direct bandgap with an acceptor dopant energy level; [0016]
FIG. 3 is a graphical illustration of a prior art direct bandgap with a donor dopant 10 energy level; [0017]
FIG. 4 is a graphical representation of a bandgap 40 of a semiconductor material that is co-doped with Boron and deep donor 48 (Bismuth) impurities; [0018]
FIG. 5 is a diagrammatic sectional view of a heterojunction bipolar transistor; and [0019]
FIG. 6 is a diagrammatic sectional view of a heterojunction bipolar transistor 15 according to this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-9.. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A two-junction tandem solar cell comprising: a monolithic first cell comprising a substrate with a bandgap of about 1.1 eV and a first charge-doped p-n junction between a GaP window layer and a BSR layer of GaP:B:Bi; and a monolithic second cell adjacent to the first cell, the second cell comprising GaP that is isoelectronically co-doped with an acceptor element and a deep donor element to have an effective bandgap of about 1.75 eV and a second charge-doped p-n junction. 11. The solar cell of claim 10, further comprising a charge- doped tunnel junction between the first cell and the isoelectronically co-doped GaP second cell.
The solar cell of claim 10, wherein the BSR layer of GaP:B:Bi has a higher bandgap than the first p-n junction. 13. The solar cell of claim 11, further comprising a first conductive contact under the substrate and a second conductive contact located on the second cell.
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The solar cell of claim 28, wherein a content of the GaP:B:Bi crystal lattice is about 5 atomic percent B and about 2.2 atomic percent Bi.
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The solar cell of claim 11, wherein the acceptor element is B and the deep donor element is Bi to form an isoelectronically co-doped GaP:B:Bi crystal lattice that is lattice matched to the substrate. 3
Layer stacks claimed or described, ordered top of device to substrate.
two-junction tandem solar cell
monolithic quadruple junction solar cell
Materials described outside the worked examples.
GaP window layer
GaP
GaP:B:Bi
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graphical illustration of a prior art direct bandgap with an acceptor dopant energy level; [0016]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap of Ge first cell | 0.67 eV | Ge |
Related documents with shared materials, methods, properties, or citations.
Sb2S3 and GaAs Absorber Layer-based Quantum Dot Solar Cells with Cadmium Telluride-based HTL: A Comparative Study
Energy Effective Mass Dependence of Electron Tunneling Through CdS/CdSe, AlxGa1-xAs/GaAs and AlSb/InAs Multiple Quantum Barriers
Patent
Atlas literature
Patent
US 9,722,122Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatic cross-sectional view of a monolithic, quadruple junction, solar cell including a cell of co-doped GaAs:Bi:B; [0015]
FIG. 2 is a graphical illustration of a prior art direct bandgap with an acceptor dopant energy level; [0016]
FIG. 3 is a graphical illustration of a prior art direct bandgap with a donor dopant 10 energy level; [0017]
FIG. 4 is a graphical representation of a bandgap 40 of a semiconductor material that is co-doped with Boron and deep donor 48 (Bismuth) impurities; [0018]
FIG. 5 is a diagrammatic sectional view of a heterojunction bipolar transistor; and [0019]
FIG. 6 is a diagrammatic sectional view of a heterojunction bipolar transistor 15 according to this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-9.. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A two-junction tandem solar cell comprising: a monolithic first cell comprising a substrate with a bandgap of about 1.1 eV and a first charge-doped p-n junction between a GaP window layer and a BSR layer of GaP:B:Bi; and a monolithic second cell adjacent to the first cell, the second cell comprising GaP that is isoelectronically co-doped with an acceptor element and a deep donor element to have an effective bandgap of about 1.75 eV and a second charge-doped p-n junction. 11. The solar cell of claim 10, further comprising a charge- doped tunnel junction between the first cell and the isoelectronically co-doped GaP second cell.
The solar cell of claim 10, wherein the BSR layer of GaP:B:Bi has a higher bandgap than the first p-n junction. 13. The solar cell of claim 11, further comprising a first conductive contact under the substrate and a second conductive contact located on the second cell.
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The solar cell of claim 28, wherein a content of the GaP:B:Bi crystal lattice is about 5 atomic percent B and about 2.2 atomic percent Bi.
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The solar cell of claim 11, wherein the acceptor element is B and the deep donor element is Bi to form an isoelectronically co-doped GaP:B:Bi crystal lattice that is lattice matched to the substrate. 3
Layer stacks claimed or described, ordered top of device to substrate.
two-junction tandem solar cell
monolithic quadruple junction solar cell
Materials described outside the worked examples.
GaP window layer
GaP
GaP:B:Bi
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graphical illustration of a prior art direct bandgap with an acceptor dopant energy level; [0016]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap of Ge first cell | 0.67 eV | Ge |
Related documents with shared materials, methods, properties, or citations.
Sb2S3 and GaAs Absorber Layer-based Quantum Dot Solar Cells with Cadmium Telluride-based HTL: A Comparative Study
Energy Effective Mass Dependence of Electron Tunneling Through CdS/CdSe, AlxGa1-xAs/GaAs and AlSb/InAs Multiple Quantum Barriers
Patent
Atlas literature
Patent
US 9,722,122Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagrammatic cross-sectional view of a monolithic, quadruple junction, solar cell including a cell of co-doped GaAs:Bi:B; [0015]
FIG. 2 is a graphical illustration of a prior art direct bandgap with an acceptor dopant energy level; [0016]
FIG. 3 is a graphical illustration of a prior art direct bandgap with a donor dopant 10 energy level; [0017]
FIG. 4 is a graphical representation of a bandgap 40 of a semiconductor material that is co-doped with Boron and deep donor 48 (Bismuth) impurities; [0018]
FIG. 5 is a diagrammatic sectional view of a heterojunction bipolar transistor; and [0019]
FIG. 6 is a diagrammatic sectional view of a heterojunction bipolar transistor 15 according to this disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-9.. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
A two-junction tandem solar cell comprising: a monolithic first cell comprising a substrate with a bandgap of about 1.1 eV and a first charge-doped p-n junction between a GaP window layer and a BSR layer of GaP:B:Bi; and a monolithic second cell adjacent to the first cell, the second cell comprising GaP that is isoelectronically co-doped with an acceptor element and a deep donor element to have an effective bandgap of about 1.75 eV and a second charge-doped p-n junction. 11. The solar cell of claim 10, further comprising a charge- doped tunnel junction between the first cell and the isoelectronically co-doped GaP second cell.
The solar cell of claim 10, wherein the BSR layer of GaP:B:Bi has a higher bandgap than the first p-n junction. 13. The solar cell of claim 11, further comprising a first conductive contact under the substrate and a second conductive contact located on the second cell.
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The solar cell of claim 28, wherein a content of the GaP:B:Bi crystal lattice is about 5 atomic percent B and about 2.2 atomic percent Bi.
16-27.. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
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canceled
canceled
canceled
The solar cell of claim 11, wherein the acceptor element is B and the deep donor element is Bi to form an isoelectronically co-doped GaP:B:Bi crystal lattice that is lattice matched to the substrate. 3
Layer stacks claimed or described, ordered top of device to substrate.
two-junction tandem solar cell
monolithic quadruple junction solar cell
Materials described outside the worked examples.
GaP window layer
GaP
GaP:B:Bi
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graphical illustration of a prior art direct bandgap with an acceptor dopant energy level; [0016]
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
bandgap of Ge first cell | 0.67 eV | Ge |
Related documents with shared materials, methods, properties, or citations.
Sb2S3 and GaAs Absorber Layer-based Quantum Dot Solar Cells with Cadmium Telluride-based HTL: A Comparative Study
Energy Effective Mass Dependence of Electron Tunneling Through CdS/CdSe, AlxGa1-xAs/GaAs and AlSb/InAs Multiple Quantum Barriers
heterojunction bipolar transistor (HBT)
substrate with bandgap ~1.1 eV
GaAs:Bi:B
Ge first cell
Ge
GaAs isoelectronically co-doped with B and Bi
GaAs:B:Bi
InGaP fourth cell
InGaP
GaAs third cell
GaAs
FIG. 3 is a graphical illustration of a prior art direct bandgap with a donor dopant 10 energy level; [0017]
FIG. 4 is a graphical representation of a bandgap 40 of a semiconductor material that is co-doped with Boron and deep donor 48 (Bismuth) impurities; [0018]
FIG. 5 is a diagrammatic sectional view of a heterojunction bipolar transistor; and [0019]
FIG. 6 is a diagrammatic sectional view of a heterojunction bipolar transistor 15 according to this disclosure.
| 1.05 eV |
GaAs:B:Bi |
bandgap of GaAs third cell | 1.42 eV | GaAs |
bandgap of InGaP fourth cell | 1.9 eV | InGaP |
bandgap of first cell substrate | 1.1 eV | substrate with bandgap ~1.1 eV |
effective bandgap of isoelectronically co-doped GaP second cell | 1.75 eV | GaP:B:Bi |
Thickness | 652–873 nm | — |
Thickness | 873–1180 nm | — |
Thickness | 1180–1850 nm | — |
heterojunction bipolar transistor (HBT)
substrate with bandgap ~1.1 eV
GaAs:Bi:B
Ge first cell
Ge
GaAs isoelectronically co-doped with B and Bi
GaAs:B:Bi
InGaP fourth cell
InGaP
GaAs third cell
GaAs
FIG. 3 is a graphical illustration of a prior art direct bandgap with a donor dopant 10 energy level; [0017]
FIG. 4 is a graphical representation of a bandgap 40 of a semiconductor material that is co-doped with Boron and deep donor 48 (Bismuth) impurities; [0018]
FIG. 5 is a diagrammatic sectional view of a heterojunction bipolar transistor; and [0019]
FIG. 6 is a diagrammatic sectional view of a heterojunction bipolar transistor 15 according to this disclosure.
| 1.05 eV |
GaAs:B:Bi |
bandgap of GaAs third cell | 1.42 eV | GaAs |
bandgap of InGaP fourth cell | 1.9 eV | InGaP |
bandgap of first cell substrate | 1.1 eV | substrate with bandgap ~1.1 eV |
effective bandgap of isoelectronically co-doped GaP second cell | 1.75 eV | GaP:B:Bi |
Thickness | 652–873 nm | — |
Thickness | 873–1180 nm | — |
Thickness | 1180–1850 nm | — |
heterojunction bipolar transistor (HBT)
substrate with bandgap ~1.1 eV
GaAs:Bi:B
Ge first cell
Ge
GaAs isoelectronically co-doped with B and Bi
GaAs:B:Bi
InGaP fourth cell
InGaP
GaAs third cell
GaAs
FIG. 3 is a graphical illustration of a prior art direct bandgap with a donor dopant 10 energy level; [0017]
FIG. 4 is a graphical representation of a bandgap 40 of a semiconductor material that is co-doped with Boron and deep donor 48 (Bismuth) impurities; [0018]
FIG. 5 is a diagrammatic sectional view of a heterojunction bipolar transistor; and [0019]
FIG. 6 is a diagrammatic sectional view of a heterojunction bipolar transistor 15 according to this disclosure.
| 1.05 eV |
GaAs:B:Bi |
bandgap of GaAs third cell | 1.42 eV | GaAs |
bandgap of InGaP fourth cell | 1.9 eV | InGaP |
bandgap of first cell substrate | 1.1 eV | substrate with bandgap ~1.1 eV |
effective bandgap of isoelectronically co-doped GaP second cell | 1.75 eV | GaP:B:Bi |
Thickness | 652–873 nm | — |
Thickness | 873–1180 nm | — |
Thickness | 1180–1850 nm | — |
heterojunction bipolar transistor (HBT)
substrate with bandgap ~1.1 eV
GaAs:Bi:B
Ge first cell
Ge
GaAs isoelectronically co-doped with B and Bi
GaAs:B:Bi
InGaP fourth cell
InGaP
GaAs third cell
GaAs
FIG. 3 is a graphical illustration of a prior art direct bandgap with a donor dopant 10 energy level; [0017]
FIG. 4 is a graphical representation of a bandgap 40 of a semiconductor material that is co-doped with Boron and deep donor 48 (Bismuth) impurities; [0018]
FIG. 5 is a diagrammatic sectional view of a heterojunction bipolar transistor; and [0019]
FIG. 6 is a diagrammatic sectional view of a heterojunction bipolar transistor 15 according to this disclosure.
| 1.05 eV |
GaAs:B:Bi |
bandgap of GaAs third cell | 1.42 eV | GaAs |
bandgap of InGaP fourth cell | 1.9 eV | InGaP |
bandgap of first cell substrate | 1.1 eV | substrate with bandgap ~1.1 eV |
effective bandgap of isoelectronically co-doped GaP second cell | 1.75 eV | GaP:B:Bi |
Thickness | 652–873 nm | — |
Thickness | 873–1180 nm | — |
Thickness | 1180–1850 nm | — |