Patent
US 8,999,201Graphene Substituted with Boron and Nitrogen, Method of Fabricating the Same, and Transistor Having the Same
Sung-hoon LEE
US
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US 8,999,201Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
FIG 2 is a graph showing a result of calculating a band gap of graphene substituted with B and N according to density function theory,
FIG 3 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
FIG 4 is a graph showing a result of calculating a band gap of graphene substituted with hexagonal boron nit ri de according to the density function theory, and 2 Atty Dkt No 2557S 1 -001575-US-DVA
FIG 5 is a sectional view of a field effect transistor including graphene according to example embodiments
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
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A tr allsistor, comprising: a c han nel formed of -ri-graphenc where m the gra p hene incl udes a sit uct ure of sei hon {C)atoms p amalv sI 4gi'Ytd warh boron f3) aomnsndfli rog en (NJ toins ~and thegrapnicne has a jband gaip an 'do >-u mn c 7 The transistor of claim 6, wherein the B atoms a ri d the N atoms substitute from about 1% to about 20% of the C atoms of the graphen e
The transistor o f cla n n 6 where in a dl itference between den si ties of the B atoms and the N atoms i s below 10 13 cm 2
The transistor of claim 8, whe r ein the B atoms and di e N atoms a te present in the graphene at substantially the same ratio. 10 fThe trans is tor of cla in 9, wherein the C atoms of the graphene are partially substituted with at least one d im er hav mn g one of di e B atoms and one of the N atoms or at least one hexagonal structure having three o f the B atoms and three of the N
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor with BN-substituted graphene channel
Materials described outside the worked examples.
BN-substituted graphene
borazine
B₃N₃H₆
ammonia borane
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 1 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
band gap (claimed, non-zero) | — | BN-substituted graphene |
band gap at n=10 super cell (approximately 1 atomic % impurities) | 0.05 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,999,201Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
FIG 2 is a graph showing a result of calculating a band gap of graphene substituted with B and N according to density function theory,
FIG 3 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
FIG 4 is a graph showing a result of calculating a band gap of graphene substituted with hexagonal boron nit ri de according to the density function theory, and 2 Atty Dkt No 2557S 1 -001575-US-DVA
FIG 5 is a sectional view of a field effect transistor including graphene according to example embodiments
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
A tr allsistor, comprising: a c han nel formed of -ri-graphenc where m the gra p hene incl udes a sit uct ure of sei hon {C)atoms p amalv sI 4gi'Ytd warh boron f3) aomnsndfli rog en (NJ toins ~and thegrapnicne has a jband gaip an 'do >-u mn c 7 The transistor of claim 6, wherein the B atoms a ri d the N atoms substitute from about 1% to about 20% of the C atoms of the graphen e
The transistor o f cla n n 6 where in a dl itference between den si ties of the B atoms and the N atoms i s below 10 13 cm 2
The transistor of claim 8, whe r ein the B atoms and di e N atoms a te present in the graphene at substantially the same ratio. 10 fThe trans is tor of cla in 9, wherein the C atoms of the graphene are partially substituted with at least one d im er hav mn g one of di e B atoms and one of the N atoms or at least one hexagonal structure having three o f the B atoms and three of the N
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor with BN-substituted graphene channel
Materials described outside the worked examples.
BN-substituted graphene
borazine
B₃N₃H₆
ammonia borane
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 1 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
band gap (claimed, non-zero) | — | BN-substituted graphene |
band gap at n=10 super cell (approximately 1 atomic % impurities) | 0.05 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,999,201Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
FIG 2 is a graph showing a result of calculating a band gap of graphene substituted with B and N according to density function theory,
FIG 3 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
FIG 4 is a graph showing a result of calculating a band gap of graphene substituted with hexagonal boron nit ri de according to the density function theory, and 2 Atty Dkt No 2557S 1 -001575-US-DVA
FIG 5 is a sectional view of a field effect transistor including graphene according to example embodiments
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
A tr allsistor, comprising: a c han nel formed of -ri-graphenc where m the gra p hene incl udes a sit uct ure of sei hon {C)atoms p amalv sI 4gi'Ytd warh boron f3) aomnsndfli rog en (NJ toins ~and thegrapnicne has a jband gaip an 'do >-u mn c 7 The transistor of claim 6, wherein the B atoms a ri d the N atoms substitute from about 1% to about 20% of the C atoms of the graphen e
The transistor o f cla n n 6 where in a dl itference between den si ties of the B atoms and the N atoms i s below 10 13 cm 2
The transistor of claim 8, whe r ein the B atoms and di e N atoms a te present in the graphene at substantially the same ratio. 10 fThe trans is tor of cla in 9, wherein the C atoms of the graphene are partially substituted with at least one d im er hav mn g one of di e B atoms and one of the N atoms or at least one hexagonal structure having three o f the B atoms and three of the N
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor with BN-substituted graphene channel
Materials described outside the worked examples.
BN-substituted graphene
borazine
B₃N₃H₆
ammonia borane
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 1 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
band gap (claimed, non-zero) | — | BN-substituted graphene |
band gap at n=10 super cell (approximately 1 atomic % impurities) | 0.05 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,999,201Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
FIG 2 is a graph showing a result of calculating a band gap of graphene substituted with B and N according to density function theory,
FIG 3 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
FIG 4 is a graph showing a result of calculating a band gap of graphene substituted with hexagonal boron nit ri de according to the density function theory, and 2 Atty Dkt No 2557S 1 -001575-US-DVA
FIG 5 is a sectional view of a field effect transistor including graphene according to example embodiments
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
canceled
canceled
canceled
canceled
A tr allsistor, comprising: a c han nel formed of -ri-graphenc where m the gra p hene incl udes a sit uct ure of sei hon {C)atoms p amalv sI 4gi'Ytd warh boron f3) aomnsndfli rog en (NJ toins ~and thegrapnicne has a jband gaip an 'do >-u mn c 7 The transistor of claim 6, wherein the B atoms a ri d the N atoms substitute from about 1% to about 20% of the C atoms of the graphen e
The transistor o f cla n n 6 where in a dl itference between den si ties of the B atoms and the N atoms i s below 10 13 cm 2
The transistor of claim 8, whe r ein the B atoms and di e N atoms a te present in the graphene at substantially the same ratio. 10 fThe trans is tor of cla in 9, wherein the C atoms of the graphene are partially substituted with at least one d im er hav mn g one of di e B atoms and one of the N atoms or at least one hexagonal structure having three o f the B atoms and three of the N
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor with BN-substituted graphene channel
Materials described outside the worked examples.
BN-substituted graphene
borazine
B₃N₃H₆
ammonia borane
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 1 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
band gap (claimed, non-zero) | — | BN-substituted graphene |
band gap at n=10 super cell (approximately 1 atomic % impurities) | 0.05 eV |
Related documents with shared materials, methods, properties, or citations.
BH₃NH₃
FIG 2 is a graph showing a result of calculating a band gap of graphene substituted with B and N according to density function theory,
FIG 2 is a graph showing a result of calculating a band gap of graphene substituted with B and N according to density function theory,
FIG 3 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
FIG 4 is a graph showing a result of calculating a band gap of graphene substituted with hexagonal boron nit ri de according to the density function theory, and 2 Atty Dkt No 2557S 1 -001575-US-DVA
FIG 4 is a graph showing a result of calculating a band gap of graphene substituted with hexagonal boron nit ri de according to the density function theory, and 2 Atty Dkt No 2557S 1 -001575-US-DVA
FIG 5 is a sectional view of a field effect transistor including graphene according to example embodiments
Thickness | ≤ 10000000000000 cm | — |
BH₃NH₃
FIG 2 is a graph showing a result of calculating a band gap of graphene substituted with B and N according to density function theory,
FIG 2 is a graph showing a result of calculating a band gap of graphene substituted with B and N according to density function theory,
FIG 3 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
FIG 4 is a graph showing a result of calculating a band gap of graphene substituted with hexagonal boron nit ri de according to the density function theory, and 2 Atty Dkt No 2557S 1 -001575-US-DVA
FIG 4 is a graph showing a result of calculating a band gap of graphene substituted with hexagonal boron nit ri de according to the density function theory, and 2 Atty Dkt No 2557S 1 -001575-US-DVA
FIG 5 is a sectional view of a field effect transistor including graphene according to example embodiments
Thickness | ≤ 10000000000000 cm | — |
BH₃NH₃
FIG 2 is a graph showing a result of calculating a band gap of graphene substituted with B and N according to density function theory,
FIG 2 is a graph showing a result of calculating a band gap of graphene substituted with B and N according to density function theory,
FIG 3 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
FIG 4 is a graph showing a result of calculating a band gap of graphene substituted with hexagonal boron nit ri de according to the density function theory, and 2 Atty Dkt No 2557S 1 -001575-US-DVA
FIG 4 is a graph showing a result of calculating a band gap of graphene substituted with hexagonal boron nit ri de according to the density function theory, and 2 Atty Dkt No 2557S 1 -001575-US-DVA
FIG 5 is a sectional view of a field effect transistor including graphene according to example embodiments
Thickness | ≤ 10000000000000 cm | — |
BH₃NH₃
FIG 2 is a graph showing a result of calculating a band gap of graphene substituted with B and N according to density function theory,
FIG 2 is a graph showing a result of calculating a band gap of graphene substituted with B and N according to density function theory,
FIG 3 is a schematic diagram of graphene in which a band gap is formed according to example embodiments,
FIG 4 is a graph showing a result of calculating a band gap of graphene substituted with hexagonal boron nit ri de according to the density function theory, and 2 Atty Dkt No 2557S 1 -001575-US-DVA
FIG 4 is a graph showing a result of calculating a band gap of graphene substituted with hexagonal boron nit ri de according to the density function theory, and 2 Atty Dkt No 2557S 1 -001575-US-DVA
FIG 5 is a sectional view of a field effect transistor including graphene according to example embodiments
Thickness | ≤ 10000000000000 cm | — |