Patent
US 9,318,872VCSEL WITH INTEGRATED ELECTRICALLY MODULATED INTRA-CAVITY GRAPHENE ABSORBER
Luke A. Graham, Ralph H. Johnson, James K. Guenter
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,318,872Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A illustrates a cross-sectional profile of an embodiment of a VCSEL 25 having a graphene intra-cavity absorber that includes a single graphene region and contact region sandwiching a dielectric region. [013]
Figure 1 B illustrates an embodiment of a cross-sectional profile of the graphene intra-cavity absorber. [014]
Figure 1 C illustrates a top view of an embodiment of a VCSEL. 30 [015]
Figure 2 illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber that includes two regions of graphene sandwiching a dielectric region. -4- [016]
Figure 2A illustrates an embodiment of a graphene intra-cavity absorber in direct contact with a contact region that can be used in a VCSEL. [017]
Figure 2B illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 5 region that can be used in the VCSEL of
Figure 2C illustrates an embodiment of a graphene intra-cavity absorber in direct contact with a contact region and corresponding electrodes that can be used in a VCSEL. [019]
Figure 2D illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 10 region and independent electrodes for the graphene intra-cavity absorber that can be used in a VCSEL. [020]
Figure 3 illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber that includes two regions of graphene sandwiching a dielectric region, where the graphene intra-cavity absorber is within a dielectric mirror. 15 [021]
Figure 3A illustrates an embodiment of a graphene intra-cavity absorber having independent electrodes within a dielectric mirror. [022]
Figure 4 includes a graph for an embodiment of a graphene intra-cavity absorber along that illustrates the index of refraction and aluminum concentration as a function of location and the doping of the semiconductor. 20 [023]
Figure 5 includes a graph illustrating the index of refraction and E -field amplitude of the graphene intra-cavity absorber of
Figure 6 illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber with conductive oxide and silicon dioxide regions. [025]
Figure 7A includes graphs that show non-absorbing and absorbing characteristics 25 of the VCSEL of
Figure 7B includes a graph that shows the coupled cavity resonance with graphene regions at antinodes of the optical electric field. [027]
Figure 8A illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber before oxidation. 30 [028]
Figure 8B illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber after oxidation. [029]
Figure 9 illustrates some example embodiments of non-transparent electrodes in relation to the graphene regions. -5-
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A VCSEL comprising: a bottom electrode; a bottom mirror stack electrically coupled to and over the bottom electrode; an active region having a lasing region over the bottom mirror stack; a top mirror stack over the active region; an oxide aperture over the active region; a contact region over the top mirror stack; a contact electrode electrically coupled with the contact region; a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region and between the graphene region and lasing region such that the dielectric region isolates the graphene region from the lasing region the g raphene intra-cavity absorber including a bottom g raphene region over the contact region, a dielectric region over the contact region, and a top graphene region over the dielectric region; a g raphene electrode electronically coupled with the top g raphene region; and a dielectric mirror over the g raphene region.
The VCSEL of claim 1, comprising a graphene electrode electronically coupled with at least one graphene region, w herein the graphene electrode electronically coupled with the at least one graphene region provides modulation voltage to modulate absorption of the graphene intra-cavity absorber.
The VCSEL of claim 1, comprising [[a]] the contact region being adjacent with and in contact with at least one dielectric region.
The VCSEL of claim 1, comprising: at least two graphene regions sandwiching at least one dielectric region therebetween, the at least two g raphene regions including the bottom g raphene region and top graphene region; a first graphene electrode electronically coupled with a first graphene region; and a second graphene electrode electronically coupled with a second graphene region.
The VCSEL of claim 1, wherein the graphene intra-cavity absorber is in a top mirror.
The VCSEL of claim 1, comprising: a bottom electrode; the bottom mirror stack is a bottom semiconductor mirror stack electrically coupled to and over the bottom electrode; an active region having the lasing region over the bottom semiconductor mirror stack; the top mirror stack is a top semiconductor mirror stack over the active region; an oxide aperture over the active region; a contact region over the top semiconductor mirror stack; the contact electrode being an annular contact electrode electrically coupled with the contact region; an electrically insulating region over the contact region; [[a]] t he bottom graphene region over the contact region with the electrically insulating region therebetween; Page 3 of 11 Application No. 14/589,392 Attorney Docket Number F1002.12491US02 Responsive to Office Action mailed a bottom graphene electrode electronically coupled with the bottom graphene region; [[a]] t he dielectric region over the contact region [[and]] is within an aperture of the annular contact electrode, a top graphene region over the dielectric region; a top graphene electrode electronically coupled with the graphene region; and a dielectric mirror over the graphene region. Page 4 of 11 Application No. 14/589,392 Attorney Docket Number F1002.12491US02 Responsive to Office Action mailed
A method of emitting modulated light, the method comprising, providing the VCSEL of claim 1, a VCSEL having a lasing region and a graphene intra- cavity absorber with at least one graphene region and at least one dielectric region adjacent to the graphene region such that the dielectric region isolates the graphene region from the lasing region; operating the VCSEL so as to produce light; and operating the graphene intra-cavity absorber so as to modulate the light.
The VCSEL of claim 1, the lasing region being configured so that the VCSEL emits a laser having a wavelength of 850 nm to 1.5 microns.
canceled
- 10. canceled
A method of manufacturing a VCSEL, the method comprising forming a VCSEL semiconductor region having a lasing region, and a contact region over the lasing region; forming a dielectric region over the contact region; forming a graphene region over the dielectric region such that the dielectric region isolates the graphene region from the lasing region; and forming a graphene electrode so as to be electrically coupled with the graphene region s forming at least one AlAs region and at least one GaAs region between the g raphene region and the VCSEL semiconductor region; and oxidizing at least one of the AlAs regions to be an insulating aluminum oxide region.
The method of claim 12, comprising forming a dielectric mirror stack over the graphene region.
The method of claim 12, comprising: forming a bottom graphene region under the dielectric region; and forming a bottom graphene electrode to be electronically coupled with the bottom graphene region.
The method of claim 12, comprising: forming a silicon dioxide region under the bottom graphene region; and forming a conductive oxide region under the silicon dioxide region.
The method of claim 12, comprising configuring the lasing region so that the VCSEL emits a laser having a wavelength of 850 nm to 1.5 microns.
canceled
A VCSEL comprising: a bottom electrode; a bottom semiconductor mirror stack electrically coupled to and over the bottom electrode; an active region having a lasing region over the bottom semiconductor mirror stack; a top semiconductor mirror stack over the active region; Page 6 of 11 Application No. 14/589,392 Attorney Docket Number F1002.12491US02 Responsive to Office Action mailed an oxide aperture over the active region; a contact region over the top semiconductor mirror stack; an annular contact electrode electrically coupled with the contact region; an electrically insulating region over the contact region; a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region and between the graphene region and lasing region such that the dielectric region isolates the graphene region from the lasing region, the graphene intra-cavity absorber including a bottom graphene region over the contact region with the electrically insulating region therebetween, a bottom graphene electrode electronically coupled with the bottom graphene region; a dielectric region over the contact region and within an aperture of the annular contact electrode, and a top graphene region over the electronically coupled with the top graphene region; region. Page 7 of 11 dielectric region; a top graphene electrode and a dielectric mirror over the graphene
Layer stacks claimed or described, ordered top of device to substrate.
VCSEL with graphene intra-cavity absorber
Materials described outside the worked examples.
graphene
dielectric
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2B illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 5 region that can be used in the VCSEL of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
VCSEL emission wavelength range | 850–1500 nm | — |
Thickness | 795–1550 nm |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED PLASMONIC SLOT ELECTRO-OPTICAL MODULATOR
CIRCUIT INCLUDING A NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICE HAVING A GRAPHENE CHANNEL, AND METHOD OF OPERATING THE CIRUCIT
Patent
Atlas literature
Patent
US 9,318,872Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A illustrates a cross-sectional profile of an embodiment of a VCSEL 25 having a graphene intra-cavity absorber that includes a single graphene region and contact region sandwiching a dielectric region. [013]
Figure 1 B illustrates an embodiment of a cross-sectional profile of the graphene intra-cavity absorber. [014]
Figure 1 C illustrates a top view of an embodiment of a VCSEL. 30 [015]
Figure 2 illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber that includes two regions of graphene sandwiching a dielectric region. -4- [016]
Figure 2A illustrates an embodiment of a graphene intra-cavity absorber in direct contact with a contact region that can be used in a VCSEL. [017]
Figure 2B illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 5 region that can be used in the VCSEL of
Figure 2C illustrates an embodiment of a graphene intra-cavity absorber in direct contact with a contact region and corresponding electrodes that can be used in a VCSEL. [019]
Figure 2D illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 10 region and independent electrodes for the graphene intra-cavity absorber that can be used in a VCSEL. [020]
Figure 3 illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber that includes two regions of graphene sandwiching a dielectric region, where the graphene intra-cavity absorber is within a dielectric mirror. 15 [021]
Figure 3A illustrates an embodiment of a graphene intra-cavity absorber having independent electrodes within a dielectric mirror. [022]
Figure 4 includes a graph for an embodiment of a graphene intra-cavity absorber along that illustrates the index of refraction and aluminum concentration as a function of location and the doping of the semiconductor. 20 [023]
Figure 5 includes a graph illustrating the index of refraction and E -field amplitude of the graphene intra-cavity absorber of
Figure 6 illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber with conductive oxide and silicon dioxide regions. [025]
Figure 7A includes graphs that show non-absorbing and absorbing characteristics 25 of the VCSEL of
Figure 7B includes a graph that shows the coupled cavity resonance with graphene regions at antinodes of the optical electric field. [027]
Figure 8A illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber before oxidation. 30 [028]
Figure 8B illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber after oxidation. [029]
Figure 9 illustrates some example embodiments of non-transparent electrodes in relation to the graphene regions. -5-
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A VCSEL comprising: a bottom electrode; a bottom mirror stack electrically coupled to and over the bottom electrode; an active region having a lasing region over the bottom mirror stack; a top mirror stack over the active region; an oxide aperture over the active region; a contact region over the top mirror stack; a contact electrode electrically coupled with the contact region; a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region and between the graphene region and lasing region such that the dielectric region isolates the graphene region from the lasing region the g raphene intra-cavity absorber including a bottom g raphene region over the contact region, a dielectric region over the contact region, and a top graphene region over the dielectric region; a g raphene electrode electronically coupled with the top g raphene region; and a dielectric mirror over the g raphene region.
The VCSEL of claim 1, comprising a graphene electrode electronically coupled with at least one graphene region, w herein the graphene electrode electronically coupled with the at least one graphene region provides modulation voltage to modulate absorption of the graphene intra-cavity absorber.
The VCSEL of claim 1, comprising [[a]] the contact region being adjacent with and in contact with at least one dielectric region.
The VCSEL of claim 1, comprising: at least two graphene regions sandwiching at least one dielectric region therebetween, the at least two g raphene regions including the bottom g raphene region and top graphene region; a first graphene electrode electronically coupled with a first graphene region; and a second graphene electrode electronically coupled with a second graphene region.
The VCSEL of claim 1, wherein the graphene intra-cavity absorber is in a top mirror.
The VCSEL of claim 1, comprising: a bottom electrode; the bottom mirror stack is a bottom semiconductor mirror stack electrically coupled to and over the bottom electrode; an active region having the lasing region over the bottom semiconductor mirror stack; the top mirror stack is a top semiconductor mirror stack over the active region; an oxide aperture over the active region; a contact region over the top semiconductor mirror stack; the contact electrode being an annular contact electrode electrically coupled with the contact region; an electrically insulating region over the contact region; [[a]] t he bottom graphene region over the contact region with the electrically insulating region therebetween; Page 3 of 11 Application No. 14/589,392 Attorney Docket Number F1002.12491US02 Responsive to Office Action mailed a bottom graphene electrode electronically coupled with the bottom graphene region; [[a]] t he dielectric region over the contact region [[and]] is within an aperture of the annular contact electrode, a top graphene region over the dielectric region; a top graphene electrode electronically coupled with the graphene region; and a dielectric mirror over the graphene region. Page 4 of 11 Application No. 14/589,392 Attorney Docket Number F1002.12491US02 Responsive to Office Action mailed
A method of emitting modulated light, the method comprising, providing the VCSEL of claim 1, a VCSEL having a lasing region and a graphene intra- cavity absorber with at least one graphene region and at least one dielectric region adjacent to the graphene region such that the dielectric region isolates the graphene region from the lasing region; operating the VCSEL so as to produce light; and operating the graphene intra-cavity absorber so as to modulate the light.
The VCSEL of claim 1, the lasing region being configured so that the VCSEL emits a laser having a wavelength of 850 nm to 1.5 microns.
canceled
- 10. canceled
A method of manufacturing a VCSEL, the method comprising forming a VCSEL semiconductor region having a lasing region, and a contact region over the lasing region; forming a dielectric region over the contact region; forming a graphene region over the dielectric region such that the dielectric region isolates the graphene region from the lasing region; and forming a graphene electrode so as to be electrically coupled with the graphene region s forming at least one AlAs region and at least one GaAs region between the g raphene region and the VCSEL semiconductor region; and oxidizing at least one of the AlAs regions to be an insulating aluminum oxide region.
The method of claim 12, comprising forming a dielectric mirror stack over the graphene region.
The method of claim 12, comprising: forming a bottom graphene region under the dielectric region; and forming a bottom graphene electrode to be electronically coupled with the bottom graphene region.
The method of claim 12, comprising: forming a silicon dioxide region under the bottom graphene region; and forming a conductive oxide region under the silicon dioxide region.
The method of claim 12, comprising configuring the lasing region so that the VCSEL emits a laser having a wavelength of 850 nm to 1.5 microns.
canceled
A VCSEL comprising: a bottom electrode; a bottom semiconductor mirror stack electrically coupled to and over the bottom electrode; an active region having a lasing region over the bottom semiconductor mirror stack; a top semiconductor mirror stack over the active region; Page 6 of 11 Application No. 14/589,392 Attorney Docket Number F1002.12491US02 Responsive to Office Action mailed an oxide aperture over the active region; a contact region over the top semiconductor mirror stack; an annular contact electrode electrically coupled with the contact region; an electrically insulating region over the contact region; a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region and between the graphene region and lasing region such that the dielectric region isolates the graphene region from the lasing region, the graphene intra-cavity absorber including a bottom graphene region over the contact region with the electrically insulating region therebetween, a bottom graphene electrode electronically coupled with the bottom graphene region; a dielectric region over the contact region and within an aperture of the annular contact electrode, and a top graphene region over the electronically coupled with the top graphene region; region. Page 7 of 11 dielectric region; a top graphene electrode and a dielectric mirror over the graphene
Layer stacks claimed or described, ordered top of device to substrate.
VCSEL with graphene intra-cavity absorber
Materials described outside the worked examples.
graphene
dielectric
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2B illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 5 region that can be used in the VCSEL of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
VCSEL emission wavelength range | 850–1500 nm | — |
Thickness | 795–1550 nm |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED PLASMONIC SLOT ELECTRO-OPTICAL MODULATOR
CIRCUIT INCLUDING A NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICE HAVING A GRAPHENE CHANNEL, AND METHOD OF OPERATING THE CIRUCIT
Patent
Atlas literature
Patent
US 9,318,872Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A illustrates a cross-sectional profile of an embodiment of a VCSEL 25 having a graphene intra-cavity absorber that includes a single graphene region and contact region sandwiching a dielectric region. [013]
Figure 1 B illustrates an embodiment of a cross-sectional profile of the graphene intra-cavity absorber. [014]
Figure 1 C illustrates a top view of an embodiment of a VCSEL. 30 [015]
Figure 2 illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber that includes two regions of graphene sandwiching a dielectric region. -4- [016]
Figure 2A illustrates an embodiment of a graphene intra-cavity absorber in direct contact with a contact region that can be used in a VCSEL. [017]
Figure 2B illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 5 region that can be used in the VCSEL of
Figure 2C illustrates an embodiment of a graphene intra-cavity absorber in direct contact with a contact region and corresponding electrodes that can be used in a VCSEL. [019]
Figure 2D illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 10 region and independent electrodes for the graphene intra-cavity absorber that can be used in a VCSEL. [020]
Figure 3 illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber that includes two regions of graphene sandwiching a dielectric region, where the graphene intra-cavity absorber is within a dielectric mirror. 15 [021]
Figure 3A illustrates an embodiment of a graphene intra-cavity absorber having independent electrodes within a dielectric mirror. [022]
Figure 4 includes a graph for an embodiment of a graphene intra-cavity absorber along that illustrates the index of refraction and aluminum concentration as a function of location and the doping of the semiconductor. 20 [023]
Figure 5 includes a graph illustrating the index of refraction and E -field amplitude of the graphene intra-cavity absorber of
Figure 6 illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber with conductive oxide and silicon dioxide regions. [025]
Figure 7A includes graphs that show non-absorbing and absorbing characteristics 25 of the VCSEL of
Figure 7B includes a graph that shows the coupled cavity resonance with graphene regions at antinodes of the optical electric field. [027]
Figure 8A illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber before oxidation. 30 [028]
Figure 8B illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber after oxidation. [029]
Figure 9 illustrates some example embodiments of non-transparent electrodes in relation to the graphene regions. -5-
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A VCSEL comprising: a bottom electrode; a bottom mirror stack electrically coupled to and over the bottom electrode; an active region having a lasing region over the bottom mirror stack; a top mirror stack over the active region; an oxide aperture over the active region; a contact region over the top mirror stack; a contact electrode electrically coupled with the contact region; a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region and between the graphene region and lasing region such that the dielectric region isolates the graphene region from the lasing region the g raphene intra-cavity absorber including a bottom g raphene region over the contact region, a dielectric region over the contact region, and a top graphene region over the dielectric region; a g raphene electrode electronically coupled with the top g raphene region; and a dielectric mirror over the g raphene region.
The VCSEL of claim 1, comprising a graphene electrode electronically coupled with at least one graphene region, w herein the graphene electrode electronically coupled with the at least one graphene region provides modulation voltage to modulate absorption of the graphene intra-cavity absorber.
The VCSEL of claim 1, comprising [[a]] the contact region being adjacent with and in contact with at least one dielectric region.
The VCSEL of claim 1, comprising: at least two graphene regions sandwiching at least one dielectric region therebetween, the at least two g raphene regions including the bottom g raphene region and top graphene region; a first graphene electrode electronically coupled with a first graphene region; and a second graphene electrode electronically coupled with a second graphene region.
The VCSEL of claim 1, wherein the graphene intra-cavity absorber is in a top mirror.
The VCSEL of claim 1, comprising: a bottom electrode; the bottom mirror stack is a bottom semiconductor mirror stack electrically coupled to and over the bottom electrode; an active region having the lasing region over the bottom semiconductor mirror stack; the top mirror stack is a top semiconductor mirror stack over the active region; an oxide aperture over the active region; a contact region over the top semiconductor mirror stack; the contact electrode being an annular contact electrode electrically coupled with the contact region; an electrically insulating region over the contact region; [[a]] t he bottom graphene region over the contact region with the electrically insulating region therebetween; Page 3 of 11 Application No. 14/589,392 Attorney Docket Number F1002.12491US02 Responsive to Office Action mailed a bottom graphene electrode electronically coupled with the bottom graphene region; [[a]] t he dielectric region over the contact region [[and]] is within an aperture of the annular contact electrode, a top graphene region over the dielectric region; a top graphene electrode electronically coupled with the graphene region; and a dielectric mirror over the graphene region. Page 4 of 11 Application No. 14/589,392 Attorney Docket Number F1002.12491US02 Responsive to Office Action mailed
A method of emitting modulated light, the method comprising, providing the VCSEL of claim 1, a VCSEL having a lasing region and a graphene intra- cavity absorber with at least one graphene region and at least one dielectric region adjacent to the graphene region such that the dielectric region isolates the graphene region from the lasing region; operating the VCSEL so as to produce light; and operating the graphene intra-cavity absorber so as to modulate the light.
The VCSEL of claim 1, the lasing region being configured so that the VCSEL emits a laser having a wavelength of 850 nm to 1.5 microns.
canceled
- 10. canceled
A method of manufacturing a VCSEL, the method comprising forming a VCSEL semiconductor region having a lasing region, and a contact region over the lasing region; forming a dielectric region over the contact region; forming a graphene region over the dielectric region such that the dielectric region isolates the graphene region from the lasing region; and forming a graphene electrode so as to be electrically coupled with the graphene region s forming at least one AlAs region and at least one GaAs region between the g raphene region and the VCSEL semiconductor region; and oxidizing at least one of the AlAs regions to be an insulating aluminum oxide region.
The method of claim 12, comprising forming a dielectric mirror stack over the graphene region.
The method of claim 12, comprising: forming a bottom graphene region under the dielectric region; and forming a bottom graphene electrode to be electronically coupled with the bottom graphene region.
The method of claim 12, comprising: forming a silicon dioxide region under the bottom graphene region; and forming a conductive oxide region under the silicon dioxide region.
The method of claim 12, comprising configuring the lasing region so that the VCSEL emits a laser having a wavelength of 850 nm to 1.5 microns.
canceled
A VCSEL comprising: a bottom electrode; a bottom semiconductor mirror stack electrically coupled to and over the bottom electrode; an active region having a lasing region over the bottom semiconductor mirror stack; a top semiconductor mirror stack over the active region; Page 6 of 11 Application No. 14/589,392 Attorney Docket Number F1002.12491US02 Responsive to Office Action mailed an oxide aperture over the active region; a contact region over the top semiconductor mirror stack; an annular contact electrode electrically coupled with the contact region; an electrically insulating region over the contact region; a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region and between the graphene region and lasing region such that the dielectric region isolates the graphene region from the lasing region, the graphene intra-cavity absorber including a bottom graphene region over the contact region with the electrically insulating region therebetween, a bottom graphene electrode electronically coupled with the bottom graphene region; a dielectric region over the contact region and within an aperture of the annular contact electrode, and a top graphene region over the electronically coupled with the top graphene region; region. Page 7 of 11 dielectric region; a top graphene electrode and a dielectric mirror over the graphene
Layer stacks claimed or described, ordered top of device to substrate.
VCSEL with graphene intra-cavity absorber
Materials described outside the worked examples.
graphene
dielectric
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2B illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 5 region that can be used in the VCSEL of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
VCSEL emission wavelength range | 850–1500 nm | — |
Thickness | 795–1550 nm |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED PLASMONIC SLOT ELECTRO-OPTICAL MODULATOR
CIRCUIT INCLUDING A NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICE HAVING A GRAPHENE CHANNEL, AND METHOD OF OPERATING THE CIRUCIT
Patent
Atlas literature
Patent
US 9,318,872Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 A illustrates a cross-sectional profile of an embodiment of a VCSEL 25 having a graphene intra-cavity absorber that includes a single graphene region and contact region sandwiching a dielectric region. [013]
Figure 1 B illustrates an embodiment of a cross-sectional profile of the graphene intra-cavity absorber. [014]
Figure 1 C illustrates a top view of an embodiment of a VCSEL. 30 [015]
Figure 2 illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber that includes two regions of graphene sandwiching a dielectric region. -4- [016]
Figure 2A illustrates an embodiment of a graphene intra-cavity absorber in direct contact with a contact region that can be used in a VCSEL. [017]
Figure 2B illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 5 region that can be used in the VCSEL of
Figure 2C illustrates an embodiment of a graphene intra-cavity absorber in direct contact with a contact region and corresponding electrodes that can be used in a VCSEL. [019]
Figure 2D illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 10 region and independent electrodes for the graphene intra-cavity absorber that can be used in a VCSEL. [020]
Figure 3 illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber that includes two regions of graphene sandwiching a dielectric region, where the graphene intra-cavity absorber is within a dielectric mirror. 15 [021]
Figure 3A illustrates an embodiment of a graphene intra-cavity absorber having independent electrodes within a dielectric mirror. [022]
Figure 4 includes a graph for an embodiment of a graphene intra-cavity absorber along that illustrates the index of refraction and aluminum concentration as a function of location and the doping of the semiconductor. 20 [023]
Figure 5 includes a graph illustrating the index of refraction and E -field amplitude of the graphene intra-cavity absorber of
Figure 6 illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber with conductive oxide and silicon dioxide regions. [025]
Figure 7A includes graphs that show non-absorbing and absorbing characteristics 25 of the VCSEL of
Figure 7B includes a graph that shows the coupled cavity resonance with graphene regions at antinodes of the optical electric field. [027]
Figure 8A illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber before oxidation. 30 [028]
Figure 8B illustrates a cross-sectional profile of an embodiment of a VCSEL having a graphene intra-cavity absorber after oxidation. [029]
Figure 9 illustrates some example embodiments of non-transparent electrodes in relation to the graphene regions. -5-
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A VCSEL comprising: a bottom electrode; a bottom mirror stack electrically coupled to and over the bottom electrode; an active region having a lasing region over the bottom mirror stack; a top mirror stack over the active region; an oxide aperture over the active region; a contact region over the top mirror stack; a contact electrode electrically coupled with the contact region; a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region and between the graphene region and lasing region such that the dielectric region isolates the graphene region from the lasing region the g raphene intra-cavity absorber including a bottom g raphene region over the contact region, a dielectric region over the contact region, and a top graphene region over the dielectric region; a g raphene electrode electronically coupled with the top g raphene region; and a dielectric mirror over the g raphene region.
The VCSEL of claim 1, comprising a graphene electrode electronically coupled with at least one graphene region, w herein the graphene electrode electronically coupled with the at least one graphene region provides modulation voltage to modulate absorption of the graphene intra-cavity absorber.
The VCSEL of claim 1, comprising [[a]] the contact region being adjacent with and in contact with at least one dielectric region.
The VCSEL of claim 1, comprising: at least two graphene regions sandwiching at least one dielectric region therebetween, the at least two g raphene regions including the bottom g raphene region and top graphene region; a first graphene electrode electronically coupled with a first graphene region; and a second graphene electrode electronically coupled with a second graphene region.
The VCSEL of claim 1, wherein the graphene intra-cavity absorber is in a top mirror.
The VCSEL of claim 1, comprising: a bottom electrode; the bottom mirror stack is a bottom semiconductor mirror stack electrically coupled to and over the bottom electrode; an active region having the lasing region over the bottom semiconductor mirror stack; the top mirror stack is a top semiconductor mirror stack over the active region; an oxide aperture over the active region; a contact region over the top semiconductor mirror stack; the contact electrode being an annular contact electrode electrically coupled with the contact region; an electrically insulating region over the contact region; [[a]] t he bottom graphene region over the contact region with the electrically insulating region therebetween; Page 3 of 11 Application No. 14/589,392 Attorney Docket Number F1002.12491US02 Responsive to Office Action mailed a bottom graphene electrode electronically coupled with the bottom graphene region; [[a]] t he dielectric region over the contact region [[and]] is within an aperture of the annular contact electrode, a top graphene region over the dielectric region; a top graphene electrode electronically coupled with the graphene region; and a dielectric mirror over the graphene region. Page 4 of 11 Application No. 14/589,392 Attorney Docket Number F1002.12491US02 Responsive to Office Action mailed
A method of emitting modulated light, the method comprising, providing the VCSEL of claim 1, a VCSEL having a lasing region and a graphene intra- cavity absorber with at least one graphene region and at least one dielectric region adjacent to the graphene region such that the dielectric region isolates the graphene region from the lasing region; operating the VCSEL so as to produce light; and operating the graphene intra-cavity absorber so as to modulate the light.
The VCSEL of claim 1, the lasing region being configured so that the VCSEL emits a laser having a wavelength of 850 nm to 1.5 microns.
canceled
- 10. canceled
A method of manufacturing a VCSEL, the method comprising forming a VCSEL semiconductor region having a lasing region, and a contact region over the lasing region; forming a dielectric region over the contact region; forming a graphene region over the dielectric region such that the dielectric region isolates the graphene region from the lasing region; and forming a graphene electrode so as to be electrically coupled with the graphene region s forming at least one AlAs region and at least one GaAs region between the g raphene region and the VCSEL semiconductor region; and oxidizing at least one of the AlAs regions to be an insulating aluminum oxide region.
The method of claim 12, comprising forming a dielectric mirror stack over the graphene region.
The method of claim 12, comprising: forming a bottom graphene region under the dielectric region; and forming a bottom graphene electrode to be electronically coupled with the bottom graphene region.
The method of claim 12, comprising: forming a silicon dioxide region under the bottom graphene region; and forming a conductive oxide region under the silicon dioxide region.
The method of claim 12, comprising configuring the lasing region so that the VCSEL emits a laser having a wavelength of 850 nm to 1.5 microns.
canceled
A VCSEL comprising: a bottom electrode; a bottom semiconductor mirror stack electrically coupled to and over the bottom electrode; an active region having a lasing region over the bottom semiconductor mirror stack; a top semiconductor mirror stack over the active region; Page 6 of 11 Application No. 14/589,392 Attorney Docket Number F1002.12491US02 Responsive to Office Action mailed an oxide aperture over the active region; a contact region over the top semiconductor mirror stack; an annular contact electrode electrically coupled with the contact region; an electrically insulating region over the contact region; a graphene intra-cavity absorber having at least one graphene region and at least one dielectric region adjacent to the graphene region and between the graphene region and lasing region such that the dielectric region isolates the graphene region from the lasing region, the graphene intra-cavity absorber including a bottom graphene region over the contact region with the electrically insulating region therebetween, a bottom graphene electrode electronically coupled with the bottom graphene region; a dielectric region over the contact region and within an aperture of the annular contact electrode, and a top graphene region over the electronically coupled with the top graphene region; region. Page 7 of 11 dielectric region; a top graphene electrode and a dielectric mirror over the graphene
Layer stacks claimed or described, ordered top of device to substrate.
VCSEL with graphene intra-cavity absorber
Materials described outside the worked examples.
graphene
dielectric
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Figure 2B illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 5 region that can be used in the VCSEL of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
VCSEL emission wavelength range | 850–1500 nm | — |
Thickness | 795–1550 nm |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED PLASMONIC SLOT ELECTRO-OPTICAL MODULATOR
CIRCUIT INCLUDING A NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICE HAVING A GRAPHENE CHANNEL, AND METHOD OF OPERATING THE CIRUCIT
VCSEL with graphene intra-cavity absorber (semiconductor mirrors, annular contact electrode)
electrically insulating region
dielectric mirror
AlAs
GaAs
insulating aluminum oxide
Al₂O₃
silicon dioxide
SiO₂
conductive oxide
Figure 2D illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 10 region and independent electrodes for the graphene intra-cavity absorber that can be used in a VCSEL. [020]
Figure 5 includes a graph illustrating the index of refraction and E -field amplitude of the graphene intra-cavity absorber of
| — |
Thickness | 908–1300 nm | — |
Voltage | 2–5 V | — |
Thickness | 50–100 µm | — |
Thickness | 5–20 nm | — |
Thickness | 3–4 µm | — |
Thickness | 4–5 µm | — |
Pressure | 6–8 pa | — |
Thickness | 6–10 µm | — |
Thickness | ≤ 20 um | — |
VCSEL with graphene intra-cavity absorber (semiconductor mirrors, annular contact electrode)
electrically insulating region
dielectric mirror
AlAs
GaAs
insulating aluminum oxide
Al₂O₃
silicon dioxide
SiO₂
conductive oxide
Figure 2D illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 10 region and independent electrodes for the graphene intra-cavity absorber that can be used in a VCSEL. [020]
Figure 5 includes a graph illustrating the index of refraction and E -field amplitude of the graphene intra-cavity absorber of
| — |
Thickness | 908–1300 nm | — |
Voltage | 2–5 V | — |
Thickness | 50–100 µm | — |
Thickness | 5–20 nm | — |
Thickness | 3–4 µm | — |
Thickness | 4–5 µm | — |
Pressure | 6–8 pa | — |
Thickness | 6–10 µm | — |
Thickness | ≤ 20 um | — |
VCSEL with graphene intra-cavity absorber (semiconductor mirrors, annular contact electrode)
electrically insulating region
dielectric mirror
AlAs
GaAs
insulating aluminum oxide
Al₂O₃
silicon dioxide
SiO₂
conductive oxide
Figure 2D illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 10 region and independent electrodes for the graphene intra-cavity absorber that can be used in a VCSEL. [020]
Figure 5 includes a graph illustrating the index of refraction and E -field amplitude of the graphene intra-cavity absorber of
| — |
Thickness | 908–1300 nm | — |
Voltage | 2–5 V | — |
Thickness | 50–100 µm | — |
Thickness | 5–20 nm | — |
Thickness | 3–4 µm | — |
Thickness | 4–5 µm | — |
Pressure | 6–8 pa | — |
Thickness | 6–10 µm | — |
Thickness | ≤ 20 um | — |
VCSEL with graphene intra-cavity absorber (semiconductor mirrors, annular contact electrode)
electrically insulating region
dielectric mirror
AlAs
GaAs
insulating aluminum oxide
Al₂O₃
silicon dioxide
SiO₂
conductive oxide
Figure 2D illustrates an embodiment of a graphene intra-cavity absorber with an electrically insulating region between the graphene intra-cavity absorber and contact 10 region and independent electrodes for the graphene intra-cavity absorber that can be used in a VCSEL. [020]
Figure 5 includes a graph illustrating the index of refraction and E -field amplitude of the graphene intra-cavity absorber of
| — |
Thickness | 908–1300 nm | — |
Voltage | 2–5 V | — |
Thickness | 50–100 µm | — |
Thickness | 5–20 nm | — |
Thickness | 3–4 µm | — |
Thickness | 4–5 µm | — |
Pressure | 6–8 pa | — |
Thickness | 6–10 µm | — |
Thickness | ≤ 20 um | — |