Method for Synthesizing Graphene

Nathaniel R. Quick

Patent

Atlas literature

Patent

US 8,617,669

Method for Synthesizing Graphene

Nathaniel R. Quick

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

apparatus side view

FIG. 1. The wide bandgap material 10 deﬁnes a ﬁrst and a second surface 11 and 12 and a peripheral edge 13. The substrate 20 deﬁnes a ﬁrst and a second surface …

FIG. 2

FIG. 2 is an enlarged isometric view of the layer of the wide bandgap material formed in the non-wide bandgap material; [00019]

FIG. 3

FIG. 3 is an enlarged sectional view of a ﬁrst embodiment of the invention illustrating a wide bandgap material 10 A formed in the substrate 20A. In this …

FIG. 4

FIG. 4 is an enlarged sectional view of a second embodiment of the invention illustrating a wide bandgap material 10 B formed in the substrate 2 0 B. In this …

FIG. 5

FIG. 5 is an enlarged sectional view of a third embodiment of the invention illustrating a wide bandgap material 1O C formed in the substrate 20C. In this …

FIG. 6

FIG. 6 is an enlarged sectional view of a fourth embodiment of the invention illustrating a component 50 D deﬁned in a wide bandgap material 1O D formed in the …

FIG. 7

FIG. 7 is an enlarged isometric view of a ﬁfth embodiment of the invention illustrating a semiconductor device 50E deﬁned in the wide bandgap material 10 E …

FIG. 8

FIG. 8 is a sectional view along line 8-8 in

FIG. 9

FIG. 9 is a sectional view along line 9-9 in

FIG. 10

FIG. 10 is an enlarged isometric view of a sixth embodiment of the invention illustrating a ﬁrst semiconductor device 51F deﬁned in the wide bandgap material …

FIG. 11

FIG. 11 is a sectional view along line 11-11 in

FIG. 12

FIG. 12 is a sectional view along line 12-12 in

FIG. 13

apparatus side view

FIG. 13. The non-wide bandgap material 15G is indicated as NON-WBG. The substrate 20G deﬁnes a ﬁrst and a second surface 21G and 22G and a peripheral edge 23G. …

FIG. 14

FIG. 14 illustrates a ﬁrst step in the process of increasing the thermal conductivity in the non-wide bandgap substrate 20G. A doping gas is applied to the …

FIG. 15

FIGS. 15 illustrate the forming of thermal conducting material 50G within the wide bandgap material 1O G of the substrate 20G. The thermal conducting material …

FIG. 16

FIG. 16 illustrates the focusing of a third thermal energy beam 40G"inside of the thermal conducting material 50G. The third thermal energy beam 40G " is …

FIG. 17

FIG. 17. The basal planes 55G of the thermal conducting material 50 G act as a plurality of micro ﬁns 65G 21 0 S extending in a parallel relationship to be …

FIG. 18

FIG. 18 is a side sectional view of one of the plurality of dies 60G of

FIG. 19

FIG. 19 is a side sectional view of a convention die 60H of the prior art incorporated into a conventional heat spreader 80H and a conventional heat sink 90H …

FIG. 20

FIGS. 20-23 increases the thickness of the assembly as the layers of silicon carbide material 10 1 and the thermal conducting material 50 1 are added onto the …

FIG. 21

FIG. 21 with a layer of thermal conducting material 50 1 deposited onto the silicon carbide material 50 1 by a conventional vapor deposition process. The …

FIG. 22

FIG. 22 illustrating the alignment of the molecular basal planes 55 1 of the carbon material 54 1. The basal planes 55 1 of the carbon material 54 1 are shown …

FIG. 23

FIGS. 23, 27 and 29, it should be understood that the carbon material 54J can actually have various degrees or types of crystalline structure. [000142] In …

FIG. 24

FIGS. 24-29 illustrate a process of the present invention for increasing the thermal conductivity of a substrate 20J formed from a silicon material 1 5 J. As …

FIG. 25

FIG. 25 with a portion of the silicon carbide material 1O J being converted into a layer of thermal conducting carbon material 50J. A second thermal energy …

FIG. 26

FIG. 26 illustrating the alignment of the crystal lattice basal planes 55J of the carbon material 54 J. The basal planes 55J of the carbon material 54 J are …

FIG. 27

FIG. 27. The carbon donating doping gas may be selected from the group consisting of methane and acetylene. [000138]

FIG. 28

FIG. 28.illustrating the alignment of the molecular basal planes 55J of the carbon material 54J. The basal planes 55J of the carbon material 54J are shown as …

FIG. 29

FIG. 29 is a magniﬁed view of a portion of

FIG. 30

FIGS. 30-32 illustrate a process of the present invention for increasing the thermal conductivity of a substrate 20K formed from a silicon carbide material 10 …

FIG. 31

FIG. 31 with the molecular planes of the layer of carbon thermal conducting material being orientated to extend from the substrate formed by focusing a thermal …

FIG. 32

FIG. 32 is a side sectional view of the substrate 20K of

FIG. 33

performance graph

FIG. 33 is a graph of the thermal conductivity of diﬀerent carbon materials. The thermal conductivity of diamond or diamond like carbon material is compared to …

FIG. 34

FIG. 34 is a listing of the thermal conductivity of various materials. The thermal conductivity of silicon carbide is three times greater than the thermal …

FIG. 35

FIG. 35B illustrating a second grapheme layer on the surface of a substrate; and [00054]

FIG. 36

FIG. 36 is an isometric view of graphene islands located on a substrate. The present invention can be used to deposit graphene at isolated spots on the …

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

5 independent · 4 dependent

1
Independentgraphenecarbon doping gassubstrate
A method for synthesizing graphene, comprising the steps of: providing a substrate; focusing a laser beam in the presence of a carbon doping gas to induce two p hoton photolytic decomposition of the carbon do p ing g as only near the gas-substrate surface interface at the laser focal p oint to p roduce a l ane of gas4e atomic carbon with carbon-carbon bonds in a h exa g onal aray; and continuing focusing the laser beam to photolytically react the carbon with the substrate to grow graphene.
2
Independentgraphenecarbon doping gasSi
A method for synthesizing graphene, comprising the steps of: providing a silicon substrate; focusing a laser beam in the presence of a carbon doping gas to induce two photon photolytic decomposition of the carbon dopin g g as only near the g as-silicon substrate surface interface at the laser focal D oint to p roduce a Dlane of gas-4o atomic carbon with carbon-carbon bonds in a hexagonal array; and continuing focusing the laser beam to photolytically react the carbon with the silicon substrate to grow graphene.
1. 3
  Dependent← claim 2grapheneSi
  3 A method for synthesizing graphene as set forth in claim 2 wherein a frequency doubled Nd:YAG laser produces a 532 nm wavelength to create two-photon absorption in silicon to limit temperature below the melting point of silicon.
2. 5
  Dependent← claim 2graphene
  A method for synthesizing graphene as set forth in claim 2 wherein the graphene is limited to 3 planes of hexagonically oriented carbon.
3. 6
  Dependent← claim 2grapheneSi
  A method for synthesizing graphene as set forth in claim 2 wherein the step of focusing the laser beam includes focusing the laser beam on portion of the silicon substrate to create islands and connecting lines of grapheme on the surface of the silicon substrate.
4
IndependentgrapheneSi
A method for synthesizing graphene as set forth in c l aim 2 wherein the laser radiation-silicon interaction catalyzes the silicon for carbon chemisorption.
7
Independentgraphenecarbon doping gasSiC
A method of forming graphene, comprising the steps of: providing a silicon carbide substrate transparent to 532 nm wavelength; immersing a top surface of the silicon carbide substrate in carbon containing doping gas; and focusing a 532 nm laser from a bottom surface to the top surface of the silicon carbide substrate to photolytically decompose the carbon on the top surface of the silicon carbide substrate growing graphene on the top surface of the silicon carbide 4 PAGE 51 6 RCVD AT 3 1131 2013 3:07:35 PM [Easte rn Daylight T une} SVR:W-PTOFAX-001 1 19 * DNIS:2738300 * C SID:8132545400 * DURATION (mm-ss):01 -16 03/1 3/2013 14:08 FAX 8132545400 I 100 6/00 6 Application No. 12/928.229 Art Unit 1715 substrate.
1. 8
  Dependent← claim 7graphene
  A method for synthesizing graphene as set forth in claim 7 wherein the graphene is limited to 3 planes of hexagonically oriented carbon.
9
Independentgraphenecarbon doping gaswide bandgap substrate
A method of forming graphene, comprising the steps of: providing a wide bandgap substrate transparent to 532 nm wavelength; immersing a top surface of the wide bandgap substrate in carbon containing doping gas; and focusing a 532 nm laser from a bottom surface to the top surface of the wide bandgap substrate to photolytically decompose the carbon on the top surface of the wide bandgap substrate growing graphene on the top surface of the wide bandgap substrate.

Materials

Materials described outside the worked examples.

graphene

Synthesized Product

carbon doping gas

Precursor Gas

Process steps

Additional fabrication and treatment steps described in the patent.

Laser Photolytic Growth

Step 1

Ambient

carbon doping gas

Process details

region:gas-substrate surface interface at laser focal point

mechanism:two-photon photolytic decomposition

product structure:

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

bandgap

Bandgap

FIG. 1. The wide bandgap material 10 deﬁnes a ﬁrst and a second surface 11 and 12 and a peripheral edge 13. The substrate 20 deﬁnes a ﬁrst and a second surface …

Figure references

FIG. 1

bandgap

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Method for Synthesizing Graphene | Matter42 Literature