Patent
US 9,269,764GRAPHENE SEMICONDUCTOR AND ELECTRICAL DEVICE INCLUDING THE SAME
Jong-ryoul AHN
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,269,764Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a band gap of a graphene; [0010]
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0011]
FIG. 3 is a graph of transmittance (percent, %) versus wavelength (nanometer, nm), which illustrates a light transmittance of the graphene monolayer prepared …
FIG. 4 illustrates a scanning tunneling microscope ("STM") image of the graphene monolayer obtained in Preparation Example 1, and
FIG. 5A.
FIGS. 6 through 9 illustrate a process of depositing sodium on monolayer graphene prepared according to Example 1; [0016]
FIG. 7 shows sodium nanorods, and
FIGS. 8 and 9 show a two-dimensional thin film structure of sodium. [00128]
FIG. 10 illustrates a band gap of the pure graphene shown in
FIG. 11, it can be seen that a band gap of about 0.6 eV was formed. The band gap evaluation results were obtained by using an optical transmission measurement …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene semiconductor comprising: graphene; a metal atomic layer disposed on the graphene; and a first oxide layer disposed on the metal atomic layer, wherein the metal atomic layer comprises an alkali metal, which is capable of charge transfer with the graphene, the first oxide layer comprises an a lk ali metal oxide, the alkali metal oxide is an oxidation product of a surface of the metal atomic layer, and a thickness of the first oxide layer is in a range of about 1 nanometer to about 100 nanometers.
The graphene semiconductor of claim 1, wherein the metal atomic layer comprises sodium.
The graphene semiconductor of claim 1, wherein the metal atomic layer is disposed on a surface of the graphene.
The graphene semiconductor of claim 1, wherein the metal atomic layer comprises a two-dimensional film structure.
The graphene semiconductor of claim 1, wherein the metal atomic layer has a form of a film, a nanorod, a nano-cluster, or a combination thereof.
The graphene semiconductor of claim 1, wherein the metal atomic layer occupies about 30 % to about 99 % of an entire surface of the graphene.
The graphene semiconductor of claim 1, wherein the graphene semiconductor has a band gap of about 0.4 electron volt or more.
The graphene semiconductor of claim 1, wherein the graphene semiconductor has a band gap of about 0.45 electron volt to about 0.8 electron volt.
The graphene semiconductor of claim 1 further comprising a second oxide layer disposed on the first oxide layer.
An electrical device comprising the graphene semiconductor of claim 1.
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canceled
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A method of selecting a band gap of graphene, the method comprising: disposing graphene on a substrate; disposing a metal atomic layer comprising an a lk ali metal on the graphene; and forming a first oxide layer having a thickness in a nanometers on the graphene by oxidizing a surface gap of the graphene.
The method of claim 16, further comprising layer.
The method of claim 16, further comprising dispose an additional metal atomic layer on the additional metal atomic layer by oxidizing the l1US₀/SI-39876-US/YPL₁₂ 0 4US range of about 1 nanometer to about 100 of the metal atomic layer to select the band 0 4US Application No. 13/905,527 Response disposing a second oxide layer on the first oxide repeating the disposing and the forming to graphene and form an additional oxide layer on additional metal atomic layer. 4 RE₂₀₁ 10751
Layer stacks claimed or described, ordered top of device to substrate.
graphene semiconductor
Materials described outside the worked examples.
graphene
alkali metal atomic layer
alkali metal oxide (first oxide layer)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | ≥ 0.4 | graphene |
Optical Band Gap | 0.45–0.8 |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED SWITCHING ELEMENTS USING A DIAMOND-SHAPED NANO-PATCH AND INTERCONNECTING NANO-RIBBONS
GRAPHENE SUBSTITUTED WITH BORON AND NITROGEN, METHOD OF FABRICATING THE SAME, AND TRANSISTOR HAVING THE SAME
Patent
Atlas literature
Patent
US 9,269,764Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a band gap of a graphene; [0010]
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0011]
FIG. 3 is a graph of transmittance (percent, %) versus wavelength (nanometer, nm), which illustrates a light transmittance of the graphene monolayer prepared …
FIG. 4 illustrates a scanning tunneling microscope ("STM") image of the graphene monolayer obtained in Preparation Example 1, and
FIG. 5A.
FIGS. 6 through 9 illustrate a process of depositing sodium on monolayer graphene prepared according to Example 1; [0016]
FIG. 7 shows sodium nanorods, and
FIGS. 8 and 9 show a two-dimensional thin film structure of sodium. [00128]
FIG. 10 illustrates a band gap of the pure graphene shown in
FIG. 11, it can be seen that a band gap of about 0.6 eV was formed. The band gap evaluation results were obtained by using an optical transmission measurement …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene semiconductor comprising: graphene; a metal atomic layer disposed on the graphene; and a first oxide layer disposed on the metal atomic layer, wherein the metal atomic layer comprises an alkali metal, which is capable of charge transfer with the graphene, the first oxide layer comprises an a lk ali metal oxide, the alkali metal oxide is an oxidation product of a surface of the metal atomic layer, and a thickness of the first oxide layer is in a range of about 1 nanometer to about 100 nanometers.
The graphene semiconductor of claim 1, wherein the metal atomic layer comprises sodium.
The graphene semiconductor of claim 1, wherein the metal atomic layer is disposed on a surface of the graphene.
The graphene semiconductor of claim 1, wherein the metal atomic layer comprises a two-dimensional film structure.
The graphene semiconductor of claim 1, wherein the metal atomic layer has a form of a film, a nanorod, a nano-cluster, or a combination thereof.
The graphene semiconductor of claim 1, wherein the metal atomic layer occupies about 30 % to about 99 % of an entire surface of the graphene.
The graphene semiconductor of claim 1, wherein the graphene semiconductor has a band gap of about 0.4 electron volt or more.
The graphene semiconductor of claim 1, wherein the graphene semiconductor has a band gap of about 0.45 electron volt to about 0.8 electron volt.
The graphene semiconductor of claim 1 further comprising a second oxide layer disposed on the first oxide layer.
An electrical device comprising the graphene semiconductor of claim 1.
. canceled
. canceled
canceled
. canceled
A method of selecting a band gap of graphene, the method comprising: disposing graphene on a substrate; disposing a metal atomic layer comprising an a lk ali metal on the graphene; and forming a first oxide layer having a thickness in a nanometers on the graphene by oxidizing a surface gap of the graphene.
The method of claim 16, further comprising layer.
The method of claim 16, further comprising dispose an additional metal atomic layer on the additional metal atomic layer by oxidizing the l1US₀/SI-39876-US/YPL₁₂ 0 4US range of about 1 nanometer to about 100 of the metal atomic layer to select the band 0 4US Application No. 13/905,527 Response disposing a second oxide layer on the first oxide repeating the disposing and the forming to graphene and form an additional oxide layer on additional metal atomic layer. 4 RE₂₀₁ 10751
Layer stacks claimed or described, ordered top of device to substrate.
graphene semiconductor
Materials described outside the worked examples.
graphene
alkali metal atomic layer
alkali metal oxide (first oxide layer)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | ≥ 0.4 | graphene |
Optical Band Gap | 0.45–0.8 |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED SWITCHING ELEMENTS USING A DIAMOND-SHAPED NANO-PATCH AND INTERCONNECTING NANO-RIBBONS
GRAPHENE SUBSTITUTED WITH BORON AND NITROGEN, METHOD OF FABRICATING THE SAME, AND TRANSISTOR HAVING THE SAME
Patent
Atlas literature
Patent
US 9,269,764Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a band gap of a graphene; [0010]
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0011]
FIG. 3 is a graph of transmittance (percent, %) versus wavelength (nanometer, nm), which illustrates a light transmittance of the graphene monolayer prepared …
FIG. 4 illustrates a scanning tunneling microscope ("STM") image of the graphene monolayer obtained in Preparation Example 1, and
FIG. 5A.
FIGS. 6 through 9 illustrate a process of depositing sodium on monolayer graphene prepared according to Example 1; [0016]
FIG. 7 shows sodium nanorods, and
FIGS. 8 and 9 show a two-dimensional thin film structure of sodium. [00128]
FIG. 10 illustrates a band gap of the pure graphene shown in
FIG. 11, it can be seen that a band gap of about 0.6 eV was formed. The band gap evaluation results were obtained by using an optical transmission measurement …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene semiconductor comprising: graphene; a metal atomic layer disposed on the graphene; and a first oxide layer disposed on the metal atomic layer, wherein the metal atomic layer comprises an alkali metal, which is capable of charge transfer with the graphene, the first oxide layer comprises an a lk ali metal oxide, the alkali metal oxide is an oxidation product of a surface of the metal atomic layer, and a thickness of the first oxide layer is in a range of about 1 nanometer to about 100 nanometers.
The graphene semiconductor of claim 1, wherein the metal atomic layer comprises sodium.
The graphene semiconductor of claim 1, wherein the metal atomic layer is disposed on a surface of the graphene.
The graphene semiconductor of claim 1, wherein the metal atomic layer comprises a two-dimensional film structure.
The graphene semiconductor of claim 1, wherein the metal atomic layer has a form of a film, a nanorod, a nano-cluster, or a combination thereof.
The graphene semiconductor of claim 1, wherein the metal atomic layer occupies about 30 % to about 99 % of an entire surface of the graphene.
The graphene semiconductor of claim 1, wherein the graphene semiconductor has a band gap of about 0.4 electron volt or more.
The graphene semiconductor of claim 1, wherein the graphene semiconductor has a band gap of about 0.45 electron volt to about 0.8 electron volt.
The graphene semiconductor of claim 1 further comprising a second oxide layer disposed on the first oxide layer.
An electrical device comprising the graphene semiconductor of claim 1.
. canceled
. canceled
canceled
. canceled
A method of selecting a band gap of graphene, the method comprising: disposing graphene on a substrate; disposing a metal atomic layer comprising an a lk ali metal on the graphene; and forming a first oxide layer having a thickness in a nanometers on the graphene by oxidizing a surface gap of the graphene.
The method of claim 16, further comprising layer.
The method of claim 16, further comprising dispose an additional metal atomic layer on the additional metal atomic layer by oxidizing the l1US₀/SI-39876-US/YPL₁₂ 0 4US range of about 1 nanometer to about 100 of the metal atomic layer to select the band 0 4US Application No. 13/905,527 Response disposing a second oxide layer on the first oxide repeating the disposing and the forming to graphene and form an additional oxide layer on additional metal atomic layer. 4 RE₂₀₁ 10751
Layer stacks claimed or described, ordered top of device to substrate.
graphene semiconductor
Materials described outside the worked examples.
graphene
alkali metal atomic layer
alkali metal oxide (first oxide layer)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | ≥ 0.4 | graphene |
Optical Band Gap | 0.45–0.8 |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED SWITCHING ELEMENTS USING A DIAMOND-SHAPED NANO-PATCH AND INTERCONNECTING NANO-RIBBONS
GRAPHENE SUBSTITUTED WITH BORON AND NITROGEN, METHOD OF FABRICATING THE SAME, AND TRANSISTOR HAVING THE SAME
Patent
Atlas literature
Patent
US 9,269,764Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a band gap of a graphene; [0010]
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0011]
FIG. 3 is a graph of transmittance (percent, %) versus wavelength (nanometer, nm), which illustrates a light transmittance of the graphene monolayer prepared …
FIG. 4 illustrates a scanning tunneling microscope ("STM") image of the graphene monolayer obtained in Preparation Example 1, and
FIG. 5A.
FIGS. 6 through 9 illustrate a process of depositing sodium on monolayer graphene prepared according to Example 1; [0016]
FIG. 7 shows sodium nanorods, and
FIGS. 8 and 9 show a two-dimensional thin film structure of sodium. [00128]
FIG. 10 illustrates a band gap of the pure graphene shown in
FIG. 11, it can be seen that a band gap of about 0.6 eV was formed. The band gap evaluation results were obtained by using an optical transmission measurement …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene semiconductor comprising: graphene; a metal atomic layer disposed on the graphene; and a first oxide layer disposed on the metal atomic layer, wherein the metal atomic layer comprises an alkali metal, which is capable of charge transfer with the graphene, the first oxide layer comprises an a lk ali metal oxide, the alkali metal oxide is an oxidation product of a surface of the metal atomic layer, and a thickness of the first oxide layer is in a range of about 1 nanometer to about 100 nanometers.
The graphene semiconductor of claim 1, wherein the metal atomic layer comprises sodium.
The graphene semiconductor of claim 1, wherein the metal atomic layer is disposed on a surface of the graphene.
The graphene semiconductor of claim 1, wherein the metal atomic layer comprises a two-dimensional film structure.
The graphene semiconductor of claim 1, wherein the metal atomic layer has a form of a film, a nanorod, a nano-cluster, or a combination thereof.
The graphene semiconductor of claim 1, wherein the metal atomic layer occupies about 30 % to about 99 % of an entire surface of the graphene.
The graphene semiconductor of claim 1, wherein the graphene semiconductor has a band gap of about 0.4 electron volt or more.
The graphene semiconductor of claim 1, wherein the graphene semiconductor has a band gap of about 0.45 electron volt to about 0.8 electron volt.
The graphene semiconductor of claim 1 further comprising a second oxide layer disposed on the first oxide layer.
An electrical device comprising the graphene semiconductor of claim 1.
. canceled
. canceled
canceled
. canceled
A method of selecting a band gap of graphene, the method comprising: disposing graphene on a substrate; disposing a metal atomic layer comprising an a lk ali metal on the graphene; and forming a first oxide layer having a thickness in a nanometers on the graphene by oxidizing a surface gap of the graphene.
The method of claim 16, further comprising layer.
The method of claim 16, further comprising dispose an additional metal atomic layer on the additional metal atomic layer by oxidizing the l1US₀/SI-39876-US/YPL₁₂ 0 4US range of about 1 nanometer to about 100 of the metal atomic layer to select the band 0 4US Application No. 13/905,527 Response disposing a second oxide layer on the first oxide repeating the disposing and the forming to graphene and form an additional oxide layer on additional metal atomic layer. 4 RE₂₀₁ 10751
Layer stacks claimed or described, ordered top of device to substrate.
graphene semiconductor
Materials described outside the worked examples.
graphene
alkali metal atomic layer
alkali metal oxide (first oxide layer)
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | ≥ 0.4 | graphene |
Optical Band Gap | 0.45–0.8 |
Related documents with shared materials, methods, properties, or citations.
GRAPHENE-BASED SWITCHING ELEMENTS USING A DIAMOND-SHAPED NANO-PATCH AND INTERCONNECTING NANO-RIBBONS
GRAPHENE SUBSTITUTED WITH BORON AND NITROGEN, METHOD OF FABRICATING THE SAME, AND TRANSISTOR HAVING THE SAME
sodium
Na
second oxide layer
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0011]
FIG. 3 is a graph of transmittance (percent, %) versus wavelength (nanometer, nm), which illustrates a light transmittance of the graphene monolayer prepared …
FIG. 10 illustrates a band gap of the pure graphene shown in
FIG. 11, it can be seen that a band gap of about 0.6 eV was formed. The band gap evaluation results were obtained by using an optical transmission measurement …
Optical Band Gap | -0.3 | graphene |
— | 0.45–0.8 eV | — |
— | 0.6–0.8 eV | — |
Thickness | 5–30 nm | — |
Duration | 600–86400 s | — |
Duration | 60–7200 s | — |
Pressure | 100–700 torr | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 0.2–10 nm | — |
Thickness | 4–300 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Thickness | 450–700 nm | — |
Thickness | 2–200 Å | — |
Duration | 1–20 hours | — |
Duration | 2–10 hours | — |
Duration | 0.001–1000 hours | — |
Thickness | 1–100 nm | — |
sodium
Na
second oxide layer
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0011]
FIG. 3 is a graph of transmittance (percent, %) versus wavelength (nanometer, nm), which illustrates a light transmittance of the graphene monolayer prepared …
FIG. 10 illustrates a band gap of the pure graphene shown in
FIG. 11, it can be seen that a band gap of about 0.6 eV was formed. The band gap evaluation results were obtained by using an optical transmission measurement …
Optical Band Gap | -0.3 | graphene |
— | 0.45–0.8 eV | — |
— | 0.6–0.8 eV | — |
Thickness | 5–30 nm | — |
Duration | 600–86400 s | — |
Duration | 60–7200 s | — |
Pressure | 100–700 torr | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 0.2–10 nm | — |
Thickness | 4–300 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Thickness | 450–700 nm | — |
Thickness | 2–200 Å | — |
Duration | 1–20 hours | — |
Duration | 2–10 hours | — |
Duration | 0.001–1000 hours | — |
Thickness | 1–100 nm | — |
sodium
Na
second oxide layer
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0011]
FIG. 3 is a graph of transmittance (percent, %) versus wavelength (nanometer, nm), which illustrates a light transmittance of the graphene monolayer prepared …
FIG. 10 illustrates a band gap of the pure graphene shown in
FIG. 11, it can be seen that a band gap of about 0.6 eV was formed. The band gap evaluation results were obtained by using an optical transmission measurement …
Optical Band Gap | -0.3 | graphene |
— | 0.45–0.8 eV | — |
— | 0.6–0.8 eV | — |
Thickness | 5–30 nm | — |
Duration | 600–86400 s | — |
Duration | 60–7200 s | — |
Pressure | 100–700 torr | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 0.2–10 nm | — |
Thickness | 4–300 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Thickness | 450–700 nm | — |
Thickness | 2–200 Å | — |
Duration | 1–20 hours | — |
Duration | 2–10 hours | — |
Duration | 0.001–1000 hours | — |
Thickness | 1–100 nm | — |
sodium
Na
second oxide layer
FIG. 2 is a schematic view of an embodiment of a field effect transistor; [0011]
FIG. 3 is a graph of transmittance (percent, %) versus wavelength (nanometer, nm), which illustrates a light transmittance of the graphene monolayer prepared …
FIG. 10 illustrates a band gap of the pure graphene shown in
FIG. 11, it can be seen that a band gap of about 0.6 eV was formed. The band gap evaluation results were obtained by using an optical transmission measurement …
Optical Band Gap | -0.3 | graphene |
— | 0.45–0.8 eV | — |
— | 0.6–0.8 eV | — |
Thickness | 5–30 nm | — |
Duration | 600–86400 s | — |
Duration | 60–7200 s | — |
Pressure | 100–700 torr | — |
Thickness | 0.5–50 nm | — |
Thickness | 1–10 nm | — |
Thickness | 0.2–10 nm | — |
Thickness | 4–300 nm | — |
Thickness | 0.1–30 nm | — |
Thickness | 0.3–20 nm | — |
Thickness | 450–700 nm | — |
Thickness | 2–200 Å | — |
Duration | 1–20 hours | — |
Duration | 2–10 hours | — |
Duration | 0.001–1000 hours | — |
Thickness | 1–100 nm | — |