Pnictide Buffer Structures and Devices for GaN Base Applications

and Published:

Patent

Atlas literature

Patent

US 10,615,141

Pnictide Buffer Structures and Devices for GaN Base Applications

CLARK, Andrew

IQE, PLC·07 December 2017·US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 depicts a pnictide alloy map illustrating lattice constant of pnictides with various group V species and rare-earth elements, according to an …

FIG. 2

FIG. 2 depicts a layer diagram including a pnictide buﬀer region with two rare earth pnictides, according to an illustrative implementation; [0020]

FIG. 3

FIG. 3 depicts a layer diagram including a pnictide buﬀer region with three rare earth pnictides, according to an illustrative implementation; [0021]

FIG. 4

FIG. 4 depicts layer diagrams including GaN and GaAs layers, according to an illustrative implementation; [0022]

FIG. 5

FIG. 5 depicts a layer diagram including GaN and Si layers, according to an illustrative implementation; [0023]

FIG. 6

FIG. 6 depicts a layer diagram including GaN and InP layers, according to an illustrative implementation; [0024]

FIG. 7

FIG. 7 depicts a layer diagram including a pnictide buﬀer region with three rare earth pnictides and an isolating layer, according to an illustrative …

FIG. 8

FIG. 8 depicts a layer diagram including electrical contacts, according to an illustrative implementation; and [0026]

FIG. 9

FIG. 9 depicts layer diagrams including a pnictide buﬀer region with a gradient, according to an illustrative implementation.

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 13 dependent

1
IndependentIII-N layerfirst rare earth pnictide layersecond rare earth pnictide layersemiconductor layerpnictide buffer structure
A structure comprising: a I II -N layer with a ﬁrst lattice constant; a ﬁrst rare earth pnictide layer with a second lattice constant epitaxially grown over the I II -N layer, wherein a ﬁrst diﬀerence between the ﬁrst lattice constant and the second lattice constant is less than one percent; a second rare earth pnictide layer with a third lattice constant epitaxially grown over the ﬁrst rare earth pnictide layer; and a semiconductor layer with a fourth lattice constant epitaxially grown over the second rare earth pnictide layer, wherein a second diﬀerence between the third lattice constant and the fourth lattice constant is less than one percent. Original
1. 2
  Dependent← claim 1ScxRE₁-xN
  The structure of claim 1, wherein the ﬁrst rare earth pnictide layer comprises an alloy comprising Sc and a rare earth element, wherein the alloy is represented by Sc xRE l -xN, wherein x is greater than zero and less than or equal to one. Original
2. 3
  Dependent← claim 1GaNSiSiCAl₂O₃
  The structure of claim 1, wherein the I II-N layer is part of a device epitaxially grown over one of a GaN substrate, a Si substrate, a SiC substrate, and a sapphire substrate. Currently amended
3. 4
  Dependent← claim 1GaN
  The structure of claim 1, wherein the I II-N layer comprises a GaN material. Currently amended
4. 5
  Dependent← claim 1
  The structure of claim 1, wherein the I II-N layer comprises one or more of Al, Ga, and In. Currently amended
5. 6
  Dependent← claim 1
  The structure of claim 1, wherein the second rare earth pnictide layer comprises at least two rare earth pnictide layers, wherein each of the rare earth pnictide layers has a diﬀerent ﬁxed lattice constant. Currently amended
6. 7
  Dependent← claim 1third rare earth pnictide layer (graded)pnictide buffer structure with graded third layer
  The structure of claim 1, further comprising a third rare earth pnictide layer between the ﬁrst rare earth pnictide layer and the second rare earth pnictide layer, wherein: the third rare earth pnictide layer has a ﬁfth lattice constant that varies across a thickness of the third rare earth pnictide layer, the third rare earth pnictide layer has a ﬁrst surface adjacent to the ﬁrst rare earth pnictide layer and a second surface adjacent to the second rare earth pnictide layer, and the ﬁfth lattice constant is graded to match the ﬁrst lattice constant at the ﬁrst surface and to match the second lattice constant at the second surface. Currently amended
7. 13
  Dependent← claim 1transistor with III-N layer
  The structure of claim 1, wherein the I II-N layer is part of a transistor. Currently amended
8. 14
  Dependent← claim 1diode with III-N layer
  The structure of claim 1, wherein the I II-N layer is part of a diode. Currently amended

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

pnictide buffer structure

semiconductor layertop semiconductor

second rare earth pnictide layersecond buffer

first rare earth pnictide layerfirst buffer

III-N layerbase layer

pnictide buffer structure with graded third layer

semiconductor layertop semiconductor

Materials

Materials described outside the worked examples.

III-N layer

Base Semiconductor Layer

first rare earth pnictide layer

Buffer Layer

Characterization

Measurements and analyses referenced in the patent, with their drawing references.

fet electrical

Fet Electrical

FIG. 8 depicts a layer diagram including electrical contacts, according to an illustrative implementation; and [0026]

Figure references

FIG. 8

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Pnictide Buffer Structures and Devices for GaN Base Applications | Matter42 Literature