WAFER BONDED GAN MONOLITHIC INTEGRATED CIRCUITS AND METHODS OF

Matthew H. Kim

Patent

Atlas literature

Patent

US 11,239,348

WAFER BONDED GAN MONOLITHIC INTEGRATED CIRCUITS AND METHODS OF

Matthew H. Kim

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

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FIG. 18

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FIG. 26

FIG. 27

FIG. 28

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

12 independent · 10 dependent

1
IndependentInGaPGaAsGaNwafer bonded heterojunction bipolar transistor
A heterojunction bipolar transistor comprising: an N-type InGaP emitter; a P-type GaAs base, [[a]] an N-type GaN collector; an emitter-base junction between the N-type InGaP emitter and the P-type GaAs base, and comprising a ﬁrst conduction band oﬀset; and a base-collector junction between the P-type GaAs base and the N-type GaN collector, and comprising a second conduction band oﬀset, wherein:, a growth condition of the N-type InGaP emitter comp ri ses one of: ordered, disordered, or mixed; the P-type GaAs base is wafer bonded to the N-type GaN collector; the base-collector junction comprises a diode I-V characteristic; the ﬁrst conduction band oﬀset is less than 0.1 eV and adjustable based on the growth condition of the N-type InGaP emitter; and the second conduction band oﬀset is less than 0.1 eV. Currently amended
1. 6
  Dependent← claim 1GaAsGaNwafer bonded heterojunction bipolar transistor
  The heter oj unction bipolar transistor of claim 1, wherein: the heter oj unction bipolar transistor is a wafer bonded GaAs-GaN heter oj unction bipolar transistor. Currently amended
2. 7
  Dependent← claim 1InGaPGaAsGaNwafer bonded heterojunction bipolar transistor
  The heter oj unction bipolar transistor of claim 1, wherein: the heter oi unction bipolar transistor is a wafer bonded I nGaP-GaAs-GaN heter oi unction bipolar transistor. Currently amended
3. 8
  Dependent← claim 1GaNGaNSiCSiAl₂O₃Cwafer bonded heterojunction bipolar transistor
  The heter oi unction bipolar transistor f claim 1, wherein: the N-type GaN collector is grown on one of: a GaN substrate, a e r- SiC substrate, a eir -Si substrate, a er -sapphire substrate, or a diamond substrate. Currently amended
4. 9
  Dependent← claim 1GaAsGaNwafer bonded heterojunction bipolar transistor
  The heter oi unction bipolar transistor of claim 1, wherein: when the P-type GaAs base is wafer bonded to the N-type GaN collector, a wafer bonded interface is formed between the P-type GaAs base and the N-type GaN collector. Currently amended
5. 21
  Dependent← claim 1InGaPGaAswafer bonded heterojunction bipolar transistor
  The heterojunction bipolar transistor of claim 1, wherein: the N-type InGaP emitter is lattice matched or near lattice matched to the P-type GaAs base. New
2
IndependentInGaPGaAsGaNwafer bonded heterojunction bipolar transistor
A method of manufacturing a heterojunction bipolar transistor, the method comprising: forming an N-type InGaP emitter; forming a P-type GaAs base; forming [[a]] an N-type GaN collector; forming an emitter-base junction between the N-type InGaP emitter and the P-type GaAs base, wherein the emitter-base junction comprises a ﬁrst conduction band oﬀset; and forming a base-collector junction between the P-type GaAs base and the N-type GaN collector, wherein the base-collector junction comprises a second conduction band oﬀset, wherein:, a growth condition of the N-type InGaP emitter comp ri ses one of: ordered, disordered, or mixed; the P-type GaAs base is wafer bonded to the N-type GaN collector; the base-collector junction comprises a diode I -V characteristic; the ﬁrst conduction band oﬀset is less than 0.1 eV and adjustable based on the growth condition of the N-type InGaP emitter; and the second conduction band oﬀset is less than 0.1 eV. Currently amended
1. 15
  Dependent← claim 2GaAsGaNwafer bonded heterojunction bipolar transistor
  The method of claim 2, wherein: the hetero j unction bipolar transistor is a wafer bonded GaAs-GaN hetero j unction bipolar transistor. Currently amended
2. 16
  Dependent← claim 2InGaPGaAsGaNwafer bonded heterojunction bipolar transistor
  The method of claim 2, wherein: the heterojunction bipolar transistor is a wafer bonded I nGaP-GaAs-GaN hetero j unction bipolar transistor. Currently amended
3. 17
  Dependent← claim 2GaNGaNSiCSiAl₂O₃Cwafer bonded heterojunction bipolar transistor
  The method of claim 2, wherein: the N-type GaN collector is grown on one of: a GaN substrate, a e r- -SiC substrate, a e r- -Si substrate, a e r- -sapphire substrate, or a diamond substrate. Currently amended
4. 18
  Dependent← claim 2GaAsGaNwafer bonded heterojunction bipolar transistor
  The method of claim 2, wherein: when the P-type GaAs base is wafer bonded to the N-type GaN collector, a wafer bonded interface is formed between the P-type GaAs base and the N-type GaN collector. Currently amended
5. 22
  Dependent← claim 2InGaPGaAswafer bonded heterojunction bipolar transistor
  The method of claim 2, wherein: the N-type InGaP emitter is lattice matched or near lattice matched to the P-type GaAs base. New
3
Independent
Canceled
4
Independent
Canceled
5
Independent
Canceled
10
IndependentInAlNInGaNwafer bonded heterojunction bipolar transistor
The heterojunction bipolar transistor of SVG 16212655.06-16-2021.KQ09X₈T₄DFLYX11.CLM.1.svg 0.15 1.49 Black and white [[a]] the wafer bonded interface further comprises a layer of at least one of: InAl N or InGaN. Currently amended
11
IndependentInNwafer bonded heterojunction bipolar transistor
The heter oi unction bipolar transistor of SVG 16212655.06-16-2021.KQ09X₈T₄DFLYX11.CLM.2.svg 0.15 1.49 Black and white [[a]] the wafer bonded interface further comprises a layer of InN. Currently amended
12
Independent
Canceled
13
Independent
Canceled
14
Independent
Canceled
19
IndependentInAlNInGaNwafer bonded heterojunction bipolar transistor
The method of claim [[2]] 18, wherein: [[a]] the wafer bonded interface further comprises a layer of at least one of: InAl N or InGaN. Currently amended
20
IndependentInNwafer bonded heterojunction bipolar transistor
The method of claim [[2]] 18, wherein: [[a]] the wafer bonded interface further comprises a layer of InN. Currently amended

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

wafer bonded heterojunction bipolar transistor

GaNcollector

GaAsbase

InGaPemitter

Materials

Materials described outside the worked examples.

N-type InGaP emitter

InGaP

Emitter

P-type GaAs base

GaAs

Base

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
first conduction band offset (emitter-base junction, InGaP/GaAs)	≤ 0.1 eV	InGaPGaAs
second conduction band offset (base-collector junction, GaAs/GaN)

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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