A method for fabricating a light emitting diode (LED), comprising: forming an epitaxial active region between first and second oppositely doped epitaxial layers on a growth substrate with said first oppositely doped layer adjacent said growth substrate, wherein said epitaxial layers are formed on said growth substrate with alternating face polarities; removing said growth substrate exposing a surface of said first oppositely doped layer, wherein said exposed surface comprises an N-face polarity; and forming a first contact layer on said exposed surface of said first oppositely doped layer, said first contact layer cooperating with the polarization effects of said face polarity of said exposed surface to form an ohmic contact.

A method for fabricating a light emitting diode (LED), comprising: Page 2 of 10 App l e. No. 12/012,376 Amdt. Dated 22 March 2011 Rep l y to Off. Act. of 3 December 2010 and Adv. Act. of 22 February 2011 forming an epitaxial active region between first and second oppositely doped epitaxial layers on a growth substrate with said first oppositely doped layer adjacent said growth substrate, wherein said epitaxial layers are formed on said growth substrate with alternating face polarities; removing said growth substrate exposing a surface of said first oppositely doped layer; and forming a first contact layer on said exposed surface of said first oppositely doped layer, said first contact layer cooperating with the polarization effects of said face polarity of said exposed surface to form an ohmic contact; wherein said epitaxial layers are formed of alternating N- face and Ga-face polarities, said exposed surface having an N- face polarity.

A method for fabricating a light emitting diode (LED), comprising: forming an epitaxial active region between first and second oppositely doped epitaxial layers on a growth substrate with said first oppositely doped layer adjacent said growth substrate, wherein said epitaxial layers are formed on said growth substrate with alternating face polarities; removing said growth substrate exposing a surface of said first oppositely doped layer; and forming a first contact layer on said exposed surface of said first oppositely doped layer, said first contact layer cooperating with the polarization effects of said face polarity of said exposed surface to form an ohmic contact; wherein said epitaxial layers are formed from a GaN material system and wherein said first contact layer comprises indium nitride (InN).

A light emitting diode (LED), comprising: a Group-I II nitride active epitaxial region between two Group-I II nitride oppositely doped epitaxial layers, said oppositely doped layers having alternating face polarities from the Group III and nitrogen (N) materials, at least one of said oppositely doped layers having an exposed surface with an N-face polarity; a first contact layer on and forming an ohmic contact with said exposed N-face polarity surface.

A light emitting diode (LED), comprising: a gallium nitride (G aN) based active region between a GaN based p-type layer and a G aN based n-type layer, said n-type layer having an exposed surface with an N-face polarity; a first contact layer on and forming an ohmic contact with said exposed N-face polarity surface.

A method for fabricating a light emitting diode (LED), comprising: forming an a first doped semiconductor layer made of a material having alternating face polarities surfaces, with one of said face polarities being an nitrogen (N)-face polarity; forming a first contact layer integral to said first doped layer, said first contact layer cooperating with one of said N- face polarity surfaces to provide an ohmic contact to said first doped layer; forming an active semiconductor region on said first doped layer; and forming a second doped semiconductor layer on said active region.

A method for fabricating a light emitting diode (LED), comprising: forming an epitaxial active region between first and second oppositely doped epitaxial layers on a growth substrate with said first oppositely doped layer adjacent said growth substrate, wherein said epitaxial layers are formed on said growth substrate with alternating face polarities; removing said growth substrate exposing a surface of said first oppositely doped layer, wherein said exposed surface comprises an N-face polarity; and forming a first contact layer on said exposed surface of said first oppositely doped layer, said first contact layer cooperating with the polarization effects of said face polarity of said exposed surface to form an ohmic contact.

A method for fabricating a light emitting diode (LED), comprising: Page 2 of 10 App l e. No. 12/012,376 Amdt. Dated 22 March 2011 Rep l y to Off. Act. of 3 December 2010 and Adv. Act. of 22 February 2011 forming an epitaxial active region between first and second oppositely doped epitaxial layers on a growth substrate with said first oppositely doped layer adjacent said growth substrate, wherein said epitaxial layers are formed on said growth substrate with alternating face polarities; removing said growth substrate exposing a surface of said first oppositely doped layer; and forming a first contact layer on said exposed surface of said first oppositely doped layer, said first contact layer cooperating with the polarization effects of said face polarity of said exposed surface to form an ohmic contact; wherein said epitaxial layers are formed of alternating N- face and Ga-face polarities, said exposed surface having an N- face polarity.

A method for fabricating a light emitting diode (LED), comprising: forming an epitaxial active region between first and second oppositely doped epitaxial layers on a growth substrate with said first oppositely doped layer adjacent said growth substrate, wherein said epitaxial layers are formed on said growth substrate with alternating face polarities; removing said growth substrate exposing a surface of said first oppositely doped layer; and forming a first contact layer on said exposed surface of said first oppositely doped layer, said first contact layer cooperating with the polarization effects of said face polarity of said exposed surface to form an ohmic contact; wherein said epitaxial layers are formed from a GaN material system and wherein said first contact layer comprises indium nitride (InN).

A light emitting diode (LED), comprising: a Group-I II nitride active epitaxial region between two Group-I II nitride oppositely doped epitaxial layers, said oppositely doped layers having alternating face polarities from the Group III and nitrogen (N) materials, at least one of said oppositely doped layers having an exposed surface with an N-face polarity; a first contact layer on and forming an ohmic contact with said exposed N-face polarity surface.

A light emitting diode (LED), comprising: a gallium nitride (G aN) based active region between a GaN based p-type layer and a G aN based n-type layer, said n-type layer having an exposed surface with an N-face polarity; a first contact layer on and forming an ohmic contact with said exposed N-face polarity surface.

A method for fabricating a light emitting diode (LED), comprising: forming an a first doped semiconductor layer made of a material having alternating face polarities surfaces, with one of said face polarities being an nitrogen (N)-face polarity; forming a first contact layer integral to said first doped layer, said first contact layer cooperating with one of said N- face polarity surfaces to provide an ohmic contact to said first doped layer; forming an active semiconductor region on said first doped layer; and forming a second doped semiconductor layer on said active region.

A method for fabricating a light emitting diode (LED), comprising: forming an epitaxial active region between first and second oppositely doped epitaxial layers on a growth substrate with said first oppositely doped layer adjacent said growth substrate, wherein said epitaxial layers are formed on said growth substrate with alternating face polarities; removing said growth substrate exposing a surface of said first oppositely doped layer, wherein said exposed surface comprises an N-face polarity; and forming a first contact layer on said exposed surface of said first oppositely doped layer, said first contact layer cooperating with the polarization effects of said face polarity of said exposed surface to form an ohmic contact.

A method for fabricating a light emitting diode (LED), comprising: Page 2 of 10 App l e. No. 12/012,376 Amdt. Dated 22 March 2011 Rep l y to Off. Act. of 3 December 2010 and Adv. Act. of 22 February 2011 forming an epitaxial active region between first and second oppositely doped epitaxial layers on a growth substrate with said first oppositely doped layer adjacent said growth substrate, wherein said epitaxial layers are formed on said growth substrate with alternating face polarities; removing said growth substrate exposing a surface of said first oppositely doped layer; and forming a first contact layer on said exposed surface of said first oppositely doped layer, said first contact layer cooperating with the polarization effects of said face polarity of said exposed surface to form an ohmic contact; wherein said epitaxial layers are formed of alternating N- face and Ga-face polarities, said exposed surface having an N- face polarity.

A method for fabricating a light emitting diode (LED), comprising: forming an epitaxial active region between first and second oppositely doped epitaxial layers on a growth substrate with said first oppositely doped layer adjacent said growth substrate, wherein said epitaxial layers are formed on said growth substrate with alternating face polarities; removing said growth substrate exposing a surface of said first oppositely doped layer; and forming a first contact layer on said exposed surface of said first oppositely doped layer, said first contact layer cooperating with the polarization effects of said face polarity of said exposed surface to form an ohmic contact; wherein said epitaxial layers are formed from a GaN material system and wherein said first contact layer comprises indium nitride (InN).

A light emitting diode (LED), comprising: a Group-I II nitride active epitaxial region between two Group-I II nitride oppositely doped epitaxial layers, said oppositely doped layers having alternating face polarities from the Group III and nitrogen (N) materials, at least one of said oppositely doped layers having an exposed surface with an N-face polarity; a first contact layer on and forming an ohmic contact with said exposed N-face polarity surface.

A light emitting diode (LED), comprising: a gallium nitride (G aN) based active region between a GaN based p-type layer and a G aN based n-type layer, said n-type layer having an exposed surface with an N-face polarity; a first contact layer on and forming an ohmic contact with said exposed N-face polarity surface.

A method for fabricating a light emitting diode (LED), comprising: forming an a first doped semiconductor layer made of a material having alternating face polarities surfaces, with one of said face polarities being an nitrogen (N)-face polarity; forming a first contact layer integral to said first doped layer, said first contact layer cooperating with one of said N- face polarity surfaces to provide an ohmic contact to said first doped layer; forming an active semiconductor region on said first doped layer; and forming a second doped semiconductor layer on said active region.

A method for fabricating a light emitting diode (LED), comprising: forming an epitaxial active region between first and second oppositely doped epitaxial layers on a growth substrate with said first oppositely doped layer adjacent said growth substrate, wherein said epitaxial layers are formed on said growth substrate with alternating face polarities; removing said growth substrate exposing a surface of said first oppositely doped layer, wherein said exposed surface comprises an N-face polarity; and forming a first contact layer on said exposed surface of said first oppositely doped layer, said first contact layer cooperating with the polarization effects of said face polarity of said exposed surface to form an ohmic contact.

A method for fabricating a light emitting diode (LED), comprising: Page 2 of 10 App l e. No. 12/012,376 Amdt. Dated 22 March 2011 Rep l y to Off. Act. of 3 December 2010 and Adv. Act. of 22 February 2011 forming an epitaxial active region between first and second oppositely doped epitaxial layers on a growth substrate with said first oppositely doped layer adjacent said growth substrate, wherein said epitaxial layers are formed on said growth substrate with alternating face polarities; removing said growth substrate exposing a surface of said first oppositely doped layer; and forming a first contact layer on said exposed surface of said first oppositely doped layer, said first contact layer cooperating with the polarization effects of said face polarity of said exposed surface to form an ohmic contact; wherein said epitaxial layers are formed of alternating N- face and Ga-face polarities, said exposed surface having an N- face polarity.

A method for fabricating a light emitting diode (LED), comprising: forming an epitaxial active region between first and second oppositely doped epitaxial layers on a growth substrate with said first oppositely doped layer adjacent said growth substrate, wherein said epitaxial layers are formed on said growth substrate with alternating face polarities; removing said growth substrate exposing a surface of said first oppositely doped layer; and forming a first contact layer on said exposed surface of said first oppositely doped layer, said first contact layer cooperating with the polarization effects of said face polarity of said exposed surface to form an ohmic contact; wherein said epitaxial layers are formed from a GaN material system and wherein said first contact layer comprises indium nitride (InN).

A light emitting diode (LED), comprising: a Group-I II nitride active epitaxial region between two Group-I II nitride oppositely doped epitaxial layers, said oppositely doped layers having alternating face polarities from the Group III and nitrogen (N) materials, at least one of said oppositely doped layers having an exposed surface with an N-face polarity; a first contact layer on and forming an ohmic contact with said exposed N-face polarity surface.

A light emitting diode (LED), comprising: a gallium nitride (G aN) based active region between a GaN based p-type layer and a G aN based n-type layer, said n-type layer having an exposed surface with an N-face polarity; a first contact layer on and forming an ohmic contact with said exposed N-face polarity surface.

A method for fabricating a light emitting diode (LED), comprising: forming an a first doped semiconductor layer made of a material having alternating face polarities surfaces, with one of said face polarities being an nitrogen (N)-face polarity; forming a first contact layer integral to said first doped layer, said first contact layer cooperating with one of said N- face polarity surfaces to provide an ohmic contact to said first doped layer; forming an active semiconductor region on said first doped layer; and forming a second doped semiconductor layer on said active region.