A gallium nitride based semiconductor light-emitting device comprising: a semiconductor region of a gallium nitride based semiconductor; an InGaN layer provided directly on a primary surface of the semiconductor region; an active layer comprising a well layer of InGaN, the active layer being provided on a primary surface of the InGaN layer; and a support base comprising a hexagonal gallium nitride and having a primary surface, the primary surface of the support base being inclined at an angle of not less than 10 degrees and not more than 80 degrees with respect to a plane perpendicular to a reference axis, and the reference axis extending in a direction of a [0001] axis of the gallium nitride, the InGaN layer being provided between the active layer and the semiconductor region, the primary surface of the semiconductor region being inclined to have semipolar nature and being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one or more gallium nitride based semiconductor layers, each gallium nitride based semiconductor layer comprising one of GaN, AlGaN, InGaN and InA l GaN, a material of the primary surface of the semiconductor region being different from that of the InGaN layer, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, the thickness of the InGaN layer being not less than 100 nm, the semiconductor region being provided on the primary surface of the support base, the InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, 2 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of the support base having a first GaN lattice constant in a first direction perpendicular to the reference axis thereof and a second GaN lattice constant in a second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

An epitaxial wafer for a gallium nitride based semiconductor light-emitting device, comprising: a substrate comprising a hexagonal gallium nitride and having a primary surface, the primary surface being inclined at an angle of not less than 10 degrees and not more than degrees with respect to a plane perpendicular to a reference axis, and the reference axis extending in a direction of a [0001] axis of the gallium nitride; a semiconductor region comprising one or more gallium nitride based semiconductor layers; an InGaN layer provided directly on a primary surface of the semiconductor region; an active layer comprising a well layer of InGaN and provided on the primary surface of the substrate; and the InGaN layer being provided between the active layer and the semiconductor region, the primary surface of the semiconductor region being inclined to have semipolar nature and being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one or more gallium nitride based semiconductor layers, Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of each gallium nitride based semiconductor layer comprising one of GaN, AlGaN, InGaN and InA l GaN, a material of the primary surface of the semiconductor region being different from that of the InGaN layer, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, the thickness of the InGaN layer being not less than 100 nm, the semiconductor region being provided on the primary surface of the substrate, the InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the substrate having a first GaN lattice constant in a first direction the reference axis thereof and a second GaN lattice constant in a second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

A method for fabricating a gallium nitride based semiconductor light- emitting device, the method comprising the steps o f: preparing a substrate of a hexagonal gallium nitride, the substrate having a primary surface, the primary surface being inclined at an angle of not less than 10 degrees and not more than 80 degrees with respect to a plane perpendicular to a reference axis, and the reference axis extending in a direction of a [0001] axis of the gallium nitride; growing a semiconductor region on the substrate, the semiconductor region comprising a gallium nitride based semiconductor and having a primary surface, and the primary surface having semipolar nature; growing an InGaN layer directly on the primary surface of the semiconductor region, the InGaN layer having a thickness of not less than 100 nm, and the InGaN layer including anisotropic lattice relaxation; and growing an active layer on a primary surface of the InGaN layer, the active layer comprising a well layer of InGaN, 6 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of the primary surface of the semiconductor region being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one of GaN, AlGaN, InGaN and InA l GaN, a material of the primary surface of the semiconductor region being different from the InGaN layer, the InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the substrate having a first GaN lattice constant in a first direction perpendicular to the reference axis thereof and a second GaN lattice constant in a second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, the second InGaN lattice constant being different from the second GaN lattice constant, and a thickness of the semiconductor region being larger than a thickness of the InGaN layer.

A gallium nitride based light-emitting diode comprising: a semiconductor region of a gallium nitride based semiconductor; an InGaN layer provided directly on a primary surface of the semiconductor region; a n4 an active layer comprising a well layer of InGaN and provided on a primary surface of the InGaN layer[[,]]; and a support base, the support base including a hexa g onal gallium nitride and havin g a primary surface inclined with respect to a plane perpendicular to a reference axis which extends in a direction of a [00011 axis of the gallium nitride, the InGaN layer being provided between the active layer and the semiconductor region, the primary surface of the semiconductor region being inclined to have semipolar nature and being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one or more gallium nitride based semiconductor layers, 7 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of each gallium nitride based semiconductor layer comprising one of GaN and AlGaN, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, and the thickness of the InGaN layer being not less than 150 nm, and the semiconductor region being provided on the primary surface of the support base, the first InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the support base having a first GaN lattice constant in the first direction perpendicular to the reference axis thereof and a second GaN lattice constant in the second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

20.

An epitaxial wafer for a gallium nitride based light-emitting diode, comprising: 9 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of a substrate comprising a hexagonal gallium nitride and having a primary surface, the primary surface being inclined with respect to a plane perpendicular to a reference axis which extends in a direction of a [0001] axis of the gallium nitride; a semiconductor region comprising one or more gallium nitride based semiconductor layers; an InGaN layer provided directly on a primary surface of the semiconductor region; and an active layer comprising a well layer of InGaN and provided above the primary surface of the support base, the semiconductor region being provided between the support base and the InGaN layer, the InGaN layer being provided between the active layer and the semiconductor region, each gallium nitride based semiconductor layer comprising one of GaN or AlGaN, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, and the InGaN layer having a thickness of not less than 150 nm the semiconductor region being provided on the primary surface of the substrate, the first InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the substrate having a first GaN lattice constant in the first direction perpendicular to the reference axis thereof and a second GaN lattice constant in the second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

A method for fabricating a gallium nitride based light-emitting diode, comprising the steps o f: growing an InGaN layer directly on a primary surface, the primary surface of a semiconductor region of a gallium nitride based semiconductor having semipolar nature, and the InGaN layer having a thickness of not less than 150 nm; and growing an active layer on a primary surface of the InGaN layer, 10 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of the InGaN layer including anisotropic lattice relaxation, the active layer comprising a well layer of InGaN, the primary surface of the semiconductor region being inclined with respect to a plane perpendicular to a reference axis which extends in a direction of a [0001] axis in the primary surface, the semiconductor region comprising one of GaN and AlGaN, and a thickness of the semiconductor region being larger than the thickness of the InGaN layer.

A gallium nitride based semiconductor light-emitting device comprising: a semiconductor region of a gallium nitride based semiconductor; an InGaN layer provided directly on a primary surface of the semiconductor region; an active layer comprising a well layer of InGaN, the active layer being provided on a primary surface of the InGaN layer; and a support base comprising a hexagonal gallium nitride and having a primary surface, the primary surface of the support base being inclined at an angle of not less than 10 degrees and not more than 80 degrees with respect to a plane perpendicular to a reference axis, and the reference axis extending in a direction of a [0001] axis of the gallium nitride, the InGaN layer being provided between the active layer and the semiconductor region, the primary surface of the semiconductor region being inclined to have semipolar nature and being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one or more gallium nitride based semiconductor layers, each gallium nitride based semiconductor layer comprising one of GaN, AlGaN, InGaN and InA l GaN, a material of the primary surface of the semiconductor region being different from that of the InGaN layer, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, the thickness of the InGaN layer being not less than 100 nm, the semiconductor region being provided on the primary surface of the support base, the InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, 2 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of the support base having a first GaN lattice constant in a first direction perpendicular to the reference axis thereof and a second GaN lattice constant in a second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

An epitaxial wafer for a gallium nitride based semiconductor light-emitting device, comprising: a substrate comprising a hexagonal gallium nitride and having a primary surface, the primary surface being inclined at an angle of not less than 10 degrees and not more than degrees with respect to a plane perpendicular to a reference axis, and the reference axis extending in a direction of a [0001] axis of the gallium nitride; a semiconductor region comprising one or more gallium nitride based semiconductor layers; an InGaN layer provided directly on a primary surface of the semiconductor region; an active layer comprising a well layer of InGaN and provided on the primary surface of the substrate; and the InGaN layer being provided between the active layer and the semiconductor region, the primary surface of the semiconductor region being inclined to have semipolar nature and being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one or more gallium nitride based semiconductor layers, Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of each gallium nitride based semiconductor layer comprising one of GaN, AlGaN, InGaN and InA l GaN, a material of the primary surface of the semiconductor region being different from that of the InGaN layer, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, the thickness of the InGaN layer being not less than 100 nm, the semiconductor region being provided on the primary surface of the substrate, the InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the substrate having a first GaN lattice constant in a first direction the reference axis thereof and a second GaN lattice constant in a second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

A method for fabricating a gallium nitride based semiconductor light- emitting device, the method comprising the steps o f: preparing a substrate of a hexagonal gallium nitride, the substrate having a primary surface, the primary surface being inclined at an angle of not less than 10 degrees and not more than 80 degrees with respect to a plane perpendicular to a reference axis, and the reference axis extending in a direction of a [0001] axis of the gallium nitride; growing a semiconductor region on the substrate, the semiconductor region comprising a gallium nitride based semiconductor and having a primary surface, and the primary surface having semipolar nature; growing an InGaN layer directly on the primary surface of the semiconductor region, the InGaN layer having a thickness of not less than 100 nm, and the InGaN layer including anisotropic lattice relaxation; and growing an active layer on a primary surface of the InGaN layer, the active layer comprising a well layer of InGaN, 6 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of the primary surface of the semiconductor region being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one of GaN, AlGaN, InGaN and InA l GaN, a material of the primary surface of the semiconductor region being different from the InGaN layer, the InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the substrate having a first GaN lattice constant in a first direction perpendicular to the reference axis thereof and a second GaN lattice constant in a second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, the second InGaN lattice constant being different from the second GaN lattice constant, and a thickness of the semiconductor region being larger than a thickness of the InGaN layer.

A gallium nitride based light-emitting diode comprising: a semiconductor region of a gallium nitride based semiconductor; an InGaN layer provided directly on a primary surface of the semiconductor region; a n4 an active layer comprising a well layer of InGaN and provided on a primary surface of the InGaN layer[[,]]; and a support base, the support base including a hexa g onal gallium nitride and havin g a primary surface inclined with respect to a plane perpendicular to a reference axis which extends in a direction of a [00011 axis of the gallium nitride, the InGaN layer being provided between the active layer and the semiconductor region, the primary surface of the semiconductor region being inclined to have semipolar nature and being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one or more gallium nitride based semiconductor layers, 7 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of each gallium nitride based semiconductor layer comprising one of GaN and AlGaN, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, and the thickness of the InGaN layer being not less than 150 nm, and the semiconductor region being provided on the primary surface of the support base, the first InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the support base having a first GaN lattice constant in the first direction perpendicular to the reference axis thereof and a second GaN lattice constant in the second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

20.

An epitaxial wafer for a gallium nitride based light-emitting diode, comprising: 9 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of a substrate comprising a hexagonal gallium nitride and having a primary surface, the primary surface being inclined with respect to a plane perpendicular to a reference axis which extends in a direction of a [0001] axis of the gallium nitride; a semiconductor region comprising one or more gallium nitride based semiconductor layers; an InGaN layer provided directly on a primary surface of the semiconductor region; and an active layer comprising a well layer of InGaN and provided above the primary surface of the support base, the semiconductor region being provided between the support base and the InGaN layer, the InGaN layer being provided between the active layer and the semiconductor region, each gallium nitride based semiconductor layer comprising one of GaN or AlGaN, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, and the InGaN layer having a thickness of not less than 150 nm the semiconductor region being provided on the primary surface of the substrate, the first InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the substrate having a first GaN lattice constant in the first direction perpendicular to the reference axis thereof and a second GaN lattice constant in the second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

A method for fabricating a gallium nitride based light-emitting diode, comprising the steps o f: growing an InGaN layer directly on a primary surface, the primary surface of a semiconductor region of a gallium nitride based semiconductor having semipolar nature, and the InGaN layer having a thickness of not less than 150 nm; and growing an active layer on a primary surface of the InGaN layer, 10 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of the InGaN layer including anisotropic lattice relaxation, the active layer comprising a well layer of InGaN, the primary surface of the semiconductor region being inclined with respect to a plane perpendicular to a reference axis which extends in a direction of a [0001] axis in the primary surface, the semiconductor region comprising one of GaN and AlGaN, and a thickness of the semiconductor region being larger than the thickness of the InGaN layer.

A gallium nitride based semiconductor light-emitting device comprising: a semiconductor region of a gallium nitride based semiconductor; an InGaN layer provided directly on a primary surface of the semiconductor region; an active layer comprising a well layer of InGaN, the active layer being provided on a primary surface of the InGaN layer; and a support base comprising a hexagonal gallium nitride and having a primary surface, the primary surface of the support base being inclined at an angle of not less than 10 degrees and not more than 80 degrees with respect to a plane perpendicular to a reference axis, and the reference axis extending in a direction of a [0001] axis of the gallium nitride, the InGaN layer being provided between the active layer and the semiconductor region, the primary surface of the semiconductor region being inclined to have semipolar nature and being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one or more gallium nitride based semiconductor layers, each gallium nitride based semiconductor layer comprising one of GaN, AlGaN, InGaN and InA l GaN, a material of the primary surface of the semiconductor region being different from that of the InGaN layer, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, the thickness of the InGaN layer being not less than 100 nm, the semiconductor region being provided on the primary surface of the support base, the InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, 2 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of the support base having a first GaN lattice constant in a first direction perpendicular to the reference axis thereof and a second GaN lattice constant in a second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

An epitaxial wafer for a gallium nitride based semiconductor light-emitting device, comprising: a substrate comprising a hexagonal gallium nitride and having a primary surface, the primary surface being inclined at an angle of not less than 10 degrees and not more than degrees with respect to a plane perpendicular to a reference axis, and the reference axis extending in a direction of a [0001] axis of the gallium nitride; a semiconductor region comprising one or more gallium nitride based semiconductor layers; an InGaN layer provided directly on a primary surface of the semiconductor region; an active layer comprising a well layer of InGaN and provided on the primary surface of the substrate; and the InGaN layer being provided between the active layer and the semiconductor region, the primary surface of the semiconductor region being inclined to have semipolar nature and being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one or more gallium nitride based semiconductor layers, Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of each gallium nitride based semiconductor layer comprising one of GaN, AlGaN, InGaN and InA l GaN, a material of the primary surface of the semiconductor region being different from that of the InGaN layer, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, the thickness of the InGaN layer being not less than 100 nm, the semiconductor region being provided on the primary surface of the substrate, the InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the substrate having a first GaN lattice constant in a first direction the reference axis thereof and a second GaN lattice constant in a second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

A method for fabricating a gallium nitride based semiconductor light- emitting device, the method comprising the steps o f: preparing a substrate of a hexagonal gallium nitride, the substrate having a primary surface, the primary surface being inclined at an angle of not less than 10 degrees and not more than 80 degrees with respect to a plane perpendicular to a reference axis, and the reference axis extending in a direction of a [0001] axis of the gallium nitride; growing a semiconductor region on the substrate, the semiconductor region comprising a gallium nitride based semiconductor and having a primary surface, and the primary surface having semipolar nature; growing an InGaN layer directly on the primary surface of the semiconductor region, the InGaN layer having a thickness of not less than 100 nm, and the InGaN layer including anisotropic lattice relaxation; and growing an active layer on a primary surface of the InGaN layer, the active layer comprising a well layer of InGaN, 6 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of the primary surface of the semiconductor region being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one of GaN, AlGaN, InGaN and InA l GaN, a material of the primary surface of the semiconductor region being different from the InGaN layer, the InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the substrate having a first GaN lattice constant in a first direction perpendicular to the reference axis thereof and a second GaN lattice constant in a second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, the second InGaN lattice constant being different from the second GaN lattice constant, and a thickness of the semiconductor region being larger than a thickness of the InGaN layer.

A gallium nitride based light-emitting diode comprising: a semiconductor region of a gallium nitride based semiconductor; an InGaN layer provided directly on a primary surface of the semiconductor region; a n4 an active layer comprising a well layer of InGaN and provided on a primary surface of the InGaN layer[[,]]; and a support base, the support base including a hexa g onal gallium nitride and havin g a primary surface inclined with respect to a plane perpendicular to a reference axis which extends in a direction of a [00011 axis of the gallium nitride, the InGaN layer being provided between the active layer and the semiconductor region, the primary surface of the semiconductor region being inclined to have semipolar nature and being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one or more gallium nitride based semiconductor layers, 7 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of each gallium nitride based semiconductor layer comprising one of GaN and AlGaN, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, and the thickness of the InGaN layer being not less than 150 nm, and the semiconductor region being provided on the primary surface of the support base, the first InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the support base having a first GaN lattice constant in the first direction perpendicular to the reference axis thereof and a second GaN lattice constant in the second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

20.

An epitaxial wafer for a gallium nitride based light-emitting diode, comprising: 9 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of a substrate comprising a hexagonal gallium nitride and having a primary surface, the primary surface being inclined with respect to a plane perpendicular to a reference axis which extends in a direction of a [0001] axis of the gallium nitride; a semiconductor region comprising one or more gallium nitride based semiconductor layers; an InGaN layer provided directly on a primary surface of the semiconductor region; and an active layer comprising a well layer of InGaN and provided above the primary surface of the support base, the semiconductor region being provided between the support base and the InGaN layer, the InGaN layer being provided between the active layer and the semiconductor region, each gallium nitride based semiconductor layer comprising one of GaN or AlGaN, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, and the InGaN layer having a thickness of not less than 150 nm the semiconductor region being provided on the primary surface of the substrate, the first InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the substrate having a first GaN lattice constant in the first direction perpendicular to the reference axis thereof and a second GaN lattice constant in the second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

A method for fabricating a gallium nitride based light-emitting diode, comprising the steps o f: growing an InGaN layer directly on a primary surface, the primary surface of a semiconductor region of a gallium nitride based semiconductor having semipolar nature, and the InGaN layer having a thickness of not less than 150 nm; and growing an active layer on a primary surface of the InGaN layer, 10 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of the InGaN layer including anisotropic lattice relaxation, the active layer comprising a well layer of InGaN, the primary surface of the semiconductor region being inclined with respect to a plane perpendicular to a reference axis which extends in a direction of a [0001] axis in the primary surface, the semiconductor region comprising one of GaN and AlGaN, and a thickness of the semiconductor region being larger than the thickness of the InGaN layer.

A gallium nitride based semiconductor light-emitting device comprising: a semiconductor region of a gallium nitride based semiconductor; an InGaN layer provided directly on a primary surface of the semiconductor region; an active layer comprising a well layer of InGaN, the active layer being provided on a primary surface of the InGaN layer; and a support base comprising a hexagonal gallium nitride and having a primary surface, the primary surface of the support base being inclined at an angle of not less than 10 degrees and not more than 80 degrees with respect to a plane perpendicular to a reference axis, and the reference axis extending in a direction of a [0001] axis of the gallium nitride, the InGaN layer being provided between the active layer and the semiconductor region, the primary surface of the semiconductor region being inclined to have semipolar nature and being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one or more gallium nitride based semiconductor layers, each gallium nitride based semiconductor layer comprising one of GaN, AlGaN, InGaN and InA l GaN, a material of the primary surface of the semiconductor region being different from that of the InGaN layer, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, the thickness of the InGaN layer being not less than 100 nm, the semiconductor region being provided on the primary surface of the support base, the InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, 2 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of the support base having a first GaN lattice constant in a first direction perpendicular to the reference axis thereof and a second GaN lattice constant in a second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

An epitaxial wafer for a gallium nitride based semiconductor light-emitting device, comprising: a substrate comprising a hexagonal gallium nitride and having a primary surface, the primary surface being inclined at an angle of not less than 10 degrees and not more than degrees with respect to a plane perpendicular to a reference axis, and the reference axis extending in a direction of a [0001] axis of the gallium nitride; a semiconductor region comprising one or more gallium nitride based semiconductor layers; an InGaN layer provided directly on a primary surface of the semiconductor region; an active layer comprising a well layer of InGaN and provided on the primary surface of the substrate; and the InGaN layer being provided between the active layer and the semiconductor region, the primary surface of the semiconductor region being inclined to have semipolar nature and being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one or more gallium nitride based semiconductor layers, Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of each gallium nitride based semiconductor layer comprising one of GaN, AlGaN, InGaN and InA l GaN, a material of the primary surface of the semiconductor region being different from that of the InGaN layer, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, the thickness of the InGaN layer being not less than 100 nm, the semiconductor region being provided on the primary surface of the substrate, the InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the substrate having a first GaN lattice constant in a first direction the reference axis thereof and a second GaN lattice constant in a second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

A method for fabricating a gallium nitride based semiconductor light- emitting device, the method comprising the steps o f: preparing a substrate of a hexagonal gallium nitride, the substrate having a primary surface, the primary surface being inclined at an angle of not less than 10 degrees and not more than 80 degrees with respect to a plane perpendicular to a reference axis, and the reference axis extending in a direction of a [0001] axis of the gallium nitride; growing a semiconductor region on the substrate, the semiconductor region comprising a gallium nitride based semiconductor and having a primary surface, and the primary surface having semipolar nature; growing an InGaN layer directly on the primary surface of the semiconductor region, the InGaN layer having a thickness of not less than 100 nm, and the InGaN layer including anisotropic lattice relaxation; and growing an active layer on a primary surface of the InGaN layer, the active layer comprising a well layer of InGaN, 6 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of the primary surface of the semiconductor region being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one of GaN, AlGaN, InGaN and InA l GaN, a material of the primary surface of the semiconductor region being different from the InGaN layer, the InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the substrate having a first GaN lattice constant in a first direction perpendicular to the reference axis thereof and a second GaN lattice constant in a second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, the second InGaN lattice constant being different from the second GaN lattice constant, and a thickness of the semiconductor region being larger than a thickness of the InGaN layer.

A gallium nitride based light-emitting diode comprising: a semiconductor region of a gallium nitride based semiconductor; an InGaN layer provided directly on a primary surface of the semiconductor region; a n4 an active layer comprising a well layer of InGaN and provided on a primary surface of the InGaN layer[[,]]; and a support base, the support base including a hexa g onal gallium nitride and havin g a primary surface inclined with respect to a plane perpendicular to a reference axis which extends in a direction of a [00011 axis of the gallium nitride, the InGaN layer being provided between the active layer and the semiconductor region, the primary surface of the semiconductor region being inclined to have semipolar nature and being inclined with respect to a plane perpendicular to an axis which extends in a direction of a [0001] axis in the primary surface thereof, the semiconductor region comprising one or more gallium nitride based semiconductor layers, 7 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of each gallium nitride based semiconductor layer comprising one of GaN and AlGaN, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, and the thickness of the InGaN layer being not less than 150 nm, and the semiconductor region being provided on the primary surface of the support base, the first InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the support base having a first GaN lattice constant in the first direction perpendicular to the reference axis thereof and a second GaN lattice constant in the second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

20.

An epitaxial wafer for a gallium nitride based light-emitting diode, comprising: 9 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of a substrate comprising a hexagonal gallium nitride and having a primary surface, the primary surface being inclined with respect to a plane perpendicular to a reference axis which extends in a direction of a [0001] axis of the gallium nitride; a semiconductor region comprising one or more gallium nitride based semiconductor layers; an InGaN layer provided directly on a primary surface of the semiconductor region; and an active layer comprising a well layer of InGaN and provided above the primary surface of the support base, the semiconductor region being provided between the support base and the InGaN layer, the InGaN layer being provided between the active layer and the semiconductor region, each gallium nitride based semiconductor layer comprising one of GaN or AlGaN, a thickness of the semiconductor region being larger than a thickness of the InGaN layer, and the InGaN layer having a thickness of not less than 150 nm the semiconductor region being provided on the primary surface of the substrate, the first InGaN layer having a first InGaN lattice constant in a first direction perpendicular to the reference axis and a second InGaN lattice constant in a second direction perpendicular to the reference axis, the first direction being perpendicular to the second direction, the substrate having a first GaN lattice constant in the first direction perpendicular to the reference axis thereof and a second GaN lattice constant in the second direction perpendicular to the reference axis thereof, the first InGaN lattice constant being equal to the first GaN lattice constant, and the second InGaN lattice constant being different from the second GaN lattice constant.

A method for fabricating a gallium nitride based light-emitting diode, comprising the steps o f: growing an InGaN layer directly on a primary surface, the primary surface of a semiconductor region of a gallium nitride based semiconductor having semipolar nature, and the InGaN layer having a thickness of not less than 150 nm; and growing an active layer on a primary surface of the InGaN layer, 10 Application No. 13/082,101 Docket No.: 87136-303188 Reply to Office Action of the InGaN layer including anisotropic lattice relaxation, the active layer comprising a well layer of InGaN, the primary surface of the semiconductor region being inclined with respect to a plane perpendicular to a reference axis which extends in a direction of a [0001] axis in the primary surface, the semiconductor region comprising one of GaN and AlGaN, and a thickness of the semiconductor region being larger than the thickness of the InGaN layer.