A device comprising: a substrate; a light-emitting structure comprising an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, said active layer emitting light of a predetermined wavelength in said active layer when electrons and holes from said n-type GaN layer and said p-type GaN layer, respectively, combine therein; a transition layer comprising p-type GaN, said transition layer comprising substantially parallel top surface and bottom surfaces, wherein said bot t om surface is a first N-face surface facing said substrate, and wherein said top surface exposes a second N-face; and a light scattering surface comprising a GaN crystalline layer characterized by a third N- face surface, said third N-face surface including features that scatter light of said predetermined wavelength, wherein said transition layer is between said third N-face surface and said substrate; and wherein said transition layer is directly adjacent said p-type GaN layer.

The device of Claim I wherein said features have dimensions that are greater than said predetermined wavelength in said scattering layer.

The device of Claim I wherein said light scattering surface comprises a first GaN layer that is doped with Mg to a concentration of 102 0 atoms/cm 3 or greater.

canceled

A device comprising: a substrate; a light-emitting structure comprising an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, said active layer emitting light of a predetermined wavelength in said active layer when electrons and holes from said n-type GaN layer and said p-type GaN layer, respectively, combine therein; a transition layer comprising p-type GaN, said transition layer comprising substantially parallel top surface and bottom surfaces, wherein said bot t om surface is a first N-face surface facing said substrate, and wherein said top surface exposes a second N-face; and a light scattering surface comprising a GaN crystalline layer characterized by a third N- face surface, said third N-face surface including features that scatter light of said predetermined wavelength, wherein said transition layer is between said third N-face surface and said substrate; and wherein said transition layer is directly adjacent said p-type GaN layer.

The device of Claim I wherein said features have dimensions that are greater than said predetermined wavelength in said scattering layer.

The device of Claim I wherein said light scattering surface comprises a first GaN layer that is doped with Mg to a concentration of 102 0 atoms/cm 3 or greater.

canceled

A device comprising: a substrate; a light-emitting structure comprising an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, said active layer emitting light of a predetermined wavelength in said active layer when electrons and holes from said n-type GaN layer and said p-type GaN layer, respectively, combine therein; a transition layer comprising p-type GaN, said transition layer comprising substantially parallel top surface and bottom surfaces, wherein said bot t om surface is a first N-face surface facing said substrate, and wherein said top surface exposes a second N-face; and a light scattering surface comprising a GaN crystalline layer characterized by a third N- face surface, said third N-face surface including features that scatter light of said predetermined wavelength, wherein said transition layer is between said third N-face surface and said substrate; and wherein said transition layer is directly adjacent said p-type GaN layer.

The device of Claim I wherein said features have dimensions that are greater than said predetermined wavelength in said scattering layer.

The device of Claim I wherein said light scattering surface comprises a first GaN layer that is doped with Mg to a concentration of 102 0 atoms/cm 3 or greater.

canceled

A device comprising: a substrate; a light-emitting structure comprising an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, said active layer emitting light of a predetermined wavelength in said active layer when electrons and holes from said n-type GaN layer and said p-type GaN layer, respectively, combine therein; a transition layer comprising p-type GaN, said transition layer comprising substantially parallel top surface and bottom surfaces, wherein said bot t om surface is a first N-face surface facing said substrate, and wherein said top surface exposes a second N-face; and a light scattering surface comprising a GaN crystalline layer characterized by a third N- face surface, said third N-face surface including features that scatter light of said predetermined wavelength, wherein said transition layer is between said third N-face surface and said substrate; and wherein said transition layer is directly adjacent said p-type GaN layer.

The device of Claim I wherein said features have dimensions that are greater than said predetermined wavelength in said scattering layer.

The device of Claim I wherein said light scattering surface comprises a first GaN layer that is doped with Mg to a concentration of 102 0 atoms/cm 3 or greater.

canceled