Patent
US 8,816,320GaN-CONTAINING SEMICONDUCTOR LIGHT EMITTING DEVICE
Sho IWAYAMA
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-containing semiconductor light emitting device comprising: an n-type semiconductor layer formed of GaN-containing 5 semiconductor having an n-type electric conductivity L [EL,]] an active layer formed on the n-type semiconductor layer, the active la y er bein g formed of GaN-containing semiconductor [[,]] and having a multiple quantum well structure including a plurality of barrier layers and well layers stacked 10 alternately L [[,]] and a p-type semiconductor layer formed on the active layer and beincg formed of GaN-containing semiconductor having a p-type electric conductivity L [Er]] wherein [[:]] the barrier layers comprise: 15 a first barrier layer disposed nearest to the n-type semiconductor layer among the barrier layers and bein g formed of a GaN/A l GaN layer which has a layered structure of a GaN sublayer and [[a]] an A l GaN sublayer i [[,]] and second barrier layers disposed nearer to the p-type 20 semiconductor layer than the first barrier layer and including an InGaN/GaN layer which has a layered structure of [[a]] an InGaN sublayer and a GaN sublayer; and -2- SVG 13743961.12-10-2013.HP₁GUJXDPXXIFW3.CLM8507149.1.300.300.2244.376.svg 0.253 6.48 Chemistry Black and white wherein the well layers are each formed of an InGaN layer having a narrower band gap than that [[in]] of the InGaN sublayer of the second barrier layers.
The GaN-containing semiconductor light emitting device as claimed in claim 1, wherein the second barrier layers comprise a third barrier layer disposed nearest to the p-type semiconductor layer among the second barrier layers and beincg formed of an InGaN layer. Claims 3-5.
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-containing semiconductor light emitting device (LED) with multiple quantum well active layer
GaN-containing semiconductor LED-first embodiment (simulation structure)
GaN-containing semiconductor LED-first comparative example (simulation structure)
GaN-containing semiconductor LED-modified first embodiment (InGaN last barrier)
Materials described outside the worked examples.
GaN-containing semiconductor (n-type)
GaN/AlGaN (first barrier layer)
InGaN/GaN (second barrier layers)
InGaN (well layers)
GaN-containing semiconductor (p-type)
GaN-containing semiconductor (active layer)
InGaN (third barrier layer)
n-type GaN
GaN
p-type Al0.15Ga0.85N (p-type clad/electron block layer)
Al0.15Ga0.85N
In0.03Ga0.97N/GaN (internal and last barrier layers, first comparative example)
In0.03Ga0.97N/GaN
In0.17Ga0.83N (well layers)
In0.17Ga0.83N
GaN/Al0.03Ga0.97N (first barrier, first embodiment)
GaN/Al0.03Ga0.97N
In0.03Ga0.97N (last barrier layer, modified first embodiment)
In0.03Ga0.97N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron mobility assumed in simulation | 200 cm2/V.s | — |
hole mobility assumed in simulation | 5 cm2/V.s | — |
In fraction x in well layers InxGa1-xN (range) | 0.1–0.25 | In0.17Ga0.83N |
In fraction y in barrier layers InyGa1-yN sublayer (range) | 0.01–0.05 | In0.03Ga0.97N/GaN |
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GAN LED ELEMENT AND LIGHT EMITTING DEVICE HAVING A STRUCTURE TO REDUCE LIGHT ABSORPTION BY A PAD ELECTRODE INCLUDED THEREIN
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Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-containing semiconductor light emitting device comprising: an n-type semiconductor layer formed of GaN-containing 5 semiconductor having an n-type electric conductivity L [EL,]] an active layer formed on the n-type semiconductor layer, the active la y er bein g formed of GaN-containing semiconductor [[,]] and having a multiple quantum well structure including a plurality of barrier layers and well layers stacked 10 alternately L [[,]] and a p-type semiconductor layer formed on the active layer and beincg formed of GaN-containing semiconductor having a p-type electric conductivity L [Er]] wherein [[:]] the barrier layers comprise: 15 a first barrier layer disposed nearest to the n-type semiconductor layer among the barrier layers and bein g formed of a GaN/A l GaN layer which has a layered structure of a GaN sublayer and [[a]] an A l GaN sublayer i [[,]] and second barrier layers disposed nearer to the p-type 20 semiconductor layer than the first barrier layer and including an InGaN/GaN layer which has a layered structure of [[a]] an InGaN sublayer and a GaN sublayer; and -2- SVG 13743961.12-10-2013.HP₁GUJXDPXXIFW3.CLM8507149.1.300.300.2244.376.svg 0.253 6.48 Chemistry Black and white wherein the well layers are each formed of an InGaN layer having a narrower band gap than that [[in]] of the InGaN sublayer of the second barrier layers.
The GaN-containing semiconductor light emitting device as claimed in claim 1, wherein the second barrier layers comprise a third barrier layer disposed nearest to the p-type semiconductor layer among the second barrier layers and beincg formed of an InGaN layer. Claims 3-5.
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-containing semiconductor light emitting device (LED) with multiple quantum well active layer
GaN-containing semiconductor LED-first embodiment (simulation structure)
GaN-containing semiconductor LED-first comparative example (simulation structure)
GaN-containing semiconductor LED-modified first embodiment (InGaN last barrier)
Materials described outside the worked examples.
GaN-containing semiconductor (n-type)
GaN/AlGaN (first barrier layer)
InGaN/GaN (second barrier layers)
InGaN (well layers)
GaN-containing semiconductor (p-type)
GaN-containing semiconductor (active layer)
InGaN (third barrier layer)
n-type GaN
GaN
p-type Al0.15Ga0.85N (p-type clad/electron block layer)
Al0.15Ga0.85N
In0.03Ga0.97N/GaN (internal and last barrier layers, first comparative example)
In0.03Ga0.97N/GaN
In0.17Ga0.83N (well layers)
In0.17Ga0.83N
GaN/Al0.03Ga0.97N (first barrier, first embodiment)
GaN/Al0.03Ga0.97N
In0.03Ga0.97N (last barrier layer, modified first embodiment)
In0.03Ga0.97N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron mobility assumed in simulation | 200 cm2/V.s | — |
hole mobility assumed in simulation | 5 cm2/V.s | — |
In fraction x in well layers InxGa1-xN (range) | 0.1–0.25 | In0.17Ga0.83N |
In fraction y in barrier layers InyGa1-yN sublayer (range) | 0.01–0.05 | In0.03Ga0.97N/GaN |
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GAN LED ELEMENT AND LIGHT EMITTING DEVICE HAVING A STRUCTURE TO REDUCE LIGHT ABSORPTION BY A PAD ELECTRODE INCLUDED THEREIN
THREE-DIMENSIONAL GALLIUM NITRIDE (GAN) PILLAR STRUCTURE LIGHT EMITTING DIODE (LED)
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Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-containing semiconductor light emitting device comprising: an n-type semiconductor layer formed of GaN-containing 5 semiconductor having an n-type electric conductivity L [EL,]] an active layer formed on the n-type semiconductor layer, the active la y er bein g formed of GaN-containing semiconductor [[,]] and having a multiple quantum well structure including a plurality of barrier layers and well layers stacked 10 alternately L [[,]] and a p-type semiconductor layer formed on the active layer and beincg formed of GaN-containing semiconductor having a p-type electric conductivity L [Er]] wherein [[:]] the barrier layers comprise: 15 a first barrier layer disposed nearest to the n-type semiconductor layer among the barrier layers and bein g formed of a GaN/A l GaN layer which has a layered structure of a GaN sublayer and [[a]] an A l GaN sublayer i [[,]] and second barrier layers disposed nearer to the p-type 20 semiconductor layer than the first barrier layer and including an InGaN/GaN layer which has a layered structure of [[a]] an InGaN sublayer and a GaN sublayer; and -2- SVG 13743961.12-10-2013.HP₁GUJXDPXXIFW3.CLM8507149.1.300.300.2244.376.svg 0.253 6.48 Chemistry Black and white wherein the well layers are each formed of an InGaN layer having a narrower band gap than that [[in]] of the InGaN sublayer of the second barrier layers.
The GaN-containing semiconductor light emitting device as claimed in claim 1, wherein the second barrier layers comprise a third barrier layer disposed nearest to the p-type semiconductor layer among the second barrier layers and beincg formed of an InGaN layer. Claims 3-5.
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-containing semiconductor light emitting device (LED) with multiple quantum well active layer
GaN-containing semiconductor LED-first embodiment (simulation structure)
GaN-containing semiconductor LED-first comparative example (simulation structure)
GaN-containing semiconductor LED-modified first embodiment (InGaN last barrier)
Materials described outside the worked examples.
GaN-containing semiconductor (n-type)
GaN/AlGaN (first barrier layer)
InGaN/GaN (second barrier layers)
InGaN (well layers)
GaN-containing semiconductor (p-type)
GaN-containing semiconductor (active layer)
InGaN (third barrier layer)
n-type GaN
GaN
p-type Al0.15Ga0.85N (p-type clad/electron block layer)
Al0.15Ga0.85N
In0.03Ga0.97N/GaN (internal and last barrier layers, first comparative example)
In0.03Ga0.97N/GaN
In0.17Ga0.83N (well layers)
In0.17Ga0.83N
GaN/Al0.03Ga0.97N (first barrier, first embodiment)
GaN/Al0.03Ga0.97N
In0.03Ga0.97N (last barrier layer, modified first embodiment)
In0.03Ga0.97N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron mobility assumed in simulation | 200 cm2/V.s | — |
hole mobility assumed in simulation | 5 cm2/V.s | — |
In fraction x in well layers InxGa1-xN (range) | 0.1–0.25 | In0.17Ga0.83N |
In fraction y in barrier layers InyGa1-yN sublayer (range) | 0.01–0.05 | In0.03Ga0.97N/GaN |
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GAN LED ELEMENT AND LIGHT EMITTING DEVICE HAVING A STRUCTURE TO REDUCE LIGHT ABSORPTION BY A PAD ELECTRODE INCLUDED THEREIN
THREE-DIMENSIONAL GALLIUM NITRIDE (GAN) PILLAR STRUCTURE LIGHT EMITTING DIODE (LED)
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CONDUCTIVITY BASED ON SELECTIVE ETCH FOR GAN DEVICES AND APPLICATIONS THEREOF
VERTICAL GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
OHMIC CONTACTS TO NITROGEN POLARITY GAN
GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING HIGH EMISSION EFFICIENCY AND METHOD OF MANUFACTURING THE SAME
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GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME, GALLIUM NITRIDE BASED LIGHT-EMITTING DIODE, EPITAXIAL WAFER, AND METHOD FOR FABRICATING GALLIUM NITRIDE LIGHT-EMITTING DIODE
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN-containing semiconductor light emitting device comprising: an n-type semiconductor layer formed of GaN-containing 5 semiconductor having an n-type electric conductivity L [EL,]] an active layer formed on the n-type semiconductor layer, the active la y er bein g formed of GaN-containing semiconductor [[,]] and having a multiple quantum well structure including a plurality of barrier layers and well layers stacked 10 alternately L [[,]] and a p-type semiconductor layer formed on the active layer and beincg formed of GaN-containing semiconductor having a p-type electric conductivity L [Er]] wherein [[:]] the barrier layers comprise: 15 a first barrier layer disposed nearest to the n-type semiconductor layer among the barrier layers and bein g formed of a GaN/A l GaN layer which has a layered structure of a GaN sublayer and [[a]] an A l GaN sublayer i [[,]] and second barrier layers disposed nearer to the p-type 20 semiconductor layer than the first barrier layer and including an InGaN/GaN layer which has a layered structure of [[a]] an InGaN sublayer and a GaN sublayer; and -2- SVG 13743961.12-10-2013.HP₁GUJXDPXXIFW3.CLM8507149.1.300.300.2244.376.svg 0.253 6.48 Chemistry Black and white wherein the well layers are each formed of an InGaN layer having a narrower band gap than that [[in]] of the InGaN sublayer of the second barrier layers.
The GaN-containing semiconductor light emitting device as claimed in claim 1, wherein the second barrier layers comprise a third barrier layer disposed nearest to the p-type semiconductor layer among the second barrier layers and beincg formed of an InGaN layer. Claims 3-5.
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN-containing semiconductor light emitting device (LED) with multiple quantum well active layer
GaN-containing semiconductor LED-first embodiment (simulation structure)
GaN-containing semiconductor LED-first comparative example (simulation structure)
GaN-containing semiconductor LED-modified first embodiment (InGaN last barrier)
Materials described outside the worked examples.
GaN-containing semiconductor (n-type)
GaN/AlGaN (first barrier layer)
InGaN/GaN (second barrier layers)
InGaN (well layers)
GaN-containing semiconductor (p-type)
GaN-containing semiconductor (active layer)
InGaN (third barrier layer)
n-type GaN
GaN
p-type Al0.15Ga0.85N (p-type clad/electron block layer)
Al0.15Ga0.85N
In0.03Ga0.97N/GaN (internal and last barrier layers, first comparative example)
In0.03Ga0.97N/GaN
In0.17Ga0.83N (well layers)
In0.17Ga0.83N
GaN/Al0.03Ga0.97N (first barrier, first embodiment)
GaN/Al0.03Ga0.97N
In0.03Ga0.97N (last barrier layer, modified first embodiment)
In0.03Ga0.97N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electron mobility assumed in simulation | 200 cm2/V.s | — |
hole mobility assumed in simulation | 5 cm2/V.s | — |
In fraction x in well layers InxGa1-xN (range) | 0.1–0.25 | In0.17Ga0.83N |
In fraction y in barrier layers InyGa1-yN sublayer (range) | 0.01–0.05 | In0.03Ga0.97N/GaN |
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THREE-DIMENSIONAL GALLIUM NITRIDE (GAN) PILLAR STRUCTURE LIGHT EMITTING DIODE (LED)
Microcontroller for IoT GaN power devices and mesh network comprising one or more microcontroller controlled IoT GaN devices
METHOD OF DRIVING GAN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD OF DRIVING GAN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT OF IMAGE DISPLAY DEVICE, METHOD OF DRIVING PLANAR LIGHT SOURCE DEVICE, AND METHOD OF DRIVING LIGHT EMITTING DEVICE
LIGHT EMITTING DEVICE HAVING UNDOPED GaN LAYER
CONDUCTIVITY BASED ON SELECTIVE ETCH FOR GAN DEVICES AND APPLICATIONS THEREOF
VERTICAL GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
OHMIC CONTACTS TO NITROGEN POLARITY GAN
GALLIUM NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING HIGH EMISSION EFFICIENCY AND METHOD OF MANUFACTURING THE SAME
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