Patent

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Patent

GaN-based LED element and light emitting device

Drawings

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Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

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IndependentAlalnbGa₁-a-bNlight-transmissive conductive oxide filmGaN-based LED element
A GaN-based LED element comprising: a semiconductor laminate composed of a plurality of GaN-based semiconductor layers, the semiconductor laminate including a p-type layer, a light emitting layer arranged on a side of one surface of the p-type layer, and an n-type layer arranged so as to sandwich the light emitting layer between the p-type layer and the n-type layer; a light-transmissive conductive oxide ﬁlm formed on another surface of the p-type layer; and a positive pad electrode formed on the light-transmissive conductive oxide ﬁlm, wherein the light-transmissive conductive oxide ﬁlm includes a ﬁrst conductive ﬁlm and a second conductive ﬁlm electrically connected to the ﬁrst conductive ﬁlm, wherein the light-transmissive conductive oxide ﬁlm has, in a part in contact with the p- type layer, a ﬁrst contact portion which is a part of the ﬁrst conductive ﬁlm and a second contact portion which is a part of the second conductive ﬁlm, wherein at least a part of the positive pad electrode is formed on the second contact portion, wherein a current supplied from the light-transmissive conductive oxide ﬁlm to the p- type layer ﬂows to the p-type layer mainly through the ﬁrst contact portion, wherein the GaN-based LED element has an unevenness artiﬁcially formed in a surface of the light-transmissive conductive oxide ﬁlm in a region not covered by the positive pad electrode, 2 wherein the light-transmissive conductive oxide ﬁlm has a multilayer structure part composed of a plurality of ﬁlms including the ﬁrst conductive ﬁlm, on an interface between the ﬁrst contact portion and the p-type layer, such that the unevenness is formed in the surface of the multilayer structure part, wherein the multilayer structure part includes the second conductive ﬁlm, and wherein a part of the second conductive ﬁlm formed on the ﬁrst conductive ﬁlm has a dot-shaped, stripe-shaped, or net-shaped pattern to serve as a convex part.
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  Dependent← claim 20GaN-based LED element
  The GaN-based LED element of claim 20, wherein a contact resistance of the light-transmissive conductive oxide ﬁlm with the p-type layer is lower in the ﬁrst contact portion than in the second contact portion.
2. 22
  Dependent← claim 20GaN-based LED element
  The GaN-based LED element of claim 20, wherein a contact between the ﬁrst contact portion and the p-type layer is ohmic, and a contact between the second contact portion and the p-type layer is non-ohmic.
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  Dependent← claim 20GaN-based LED element
  The GaN-based LED element of claim 20, wherein at least 25% of an area of the positive pad electrode is formed on the second contact portion.
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  Dependent← claim 20GaN-based LED element
  The GaN-based LED element of claim 20, wherein a whole of the positive pad electrode is formed on the second contact portion.
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  Dependent← claim 20GaN-based LED element
  The GaN-based LED element of claim 20, wherein the positive pad electrode is composed of a body part used for bonding to a material used for making a connection to an external electrode, and a protrusion part projecting from the body part, and wherein at least a whole of the body part of the positive pad electrode is formed on the second contact portion.
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  Dependent← claim 20GaN-based LED element
  The GaN-based LED element of claim 20, wherein a part of the second conductive ﬁlm formed on the ﬁrst conductive ﬁlm is made into the dot-shaped pattern to serve as the convex part.
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  Dependent← claim 20reflection layer materialGaN-based LED element
  The GaN-based LED element of claim 20, wherein the positive pad electrode has a reﬂection layer made of Al, Ag, or a platinum group element as a main component.
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  Dependent← claim 20flip-chip mounted light emitting device
  A light emitting device wherein the GaN-based LED element of claim 20 is ﬂip-chip mounted.
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Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN-based LED element

positive pad electrodepositive pad electrode

light-transmissive conductive oxide filmlight-transmissive conductive oxide film (first conductive film + second conductive film)

AlalnbGa₁-a-bNp-type layer

AlalnbGa₁-a-bNlight emitting layer

AlalnbGa₁-a-bNn-type layer

flip-chip mounted light emitting device

Materials

Materials described outside the worked examples.

GaN-based semiconductor

AlalnbGa₁-a-bN

Semiconductor Laminate

light-transmissive conductive oxide film

Transparent Electrode

Why these are connected

Related documents with shared materials, methods, properties, or citations.

GaN-based LED element and light emitting device | Matter42 Literature