Methods of generating porous gallium nitride and optoelectronic devices based thereon

Yu Zhang

Patent

Atlas literature

Patent

US 10,458,038

Methods of generating porous gallium nitride and optoelectronic devices based thereon

Yu Zhang

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

5 independent · 21 dependent

1
Independent
1-56. Canceled
56
Independent
Canceled
57
IndependentGaNGaNintegrated optoelectronic device with porous GaN distributed Bragg reflector
An integrated optoelectronic device comprising: a ﬁrst layer comprising gallium nitride located on a substrate; a second layer comprising porous gallium nitride having an n-type conductivity located on a side of the ﬁrst layer opposite the substrate and forming one layer of a distributed Bragg reﬂector; and an active region formed on a side of the second layer opposite the substrate. Previously presented
1. 58
  Dependent← claim 57GaNGaNintegrated optoelectronic device with porous GaN distributed Bragg reflector
  The integrated device of claim 57, wherein a refractive index of the second layer is less than a refractive index of the ﬁrst layer. Previously presented
2. 61
  Dependent← claim 57GaN
  The integrated device of claim 57, wherein the second layer has a dopant density greater than 2x10 1 8 cm⁻³. Previously presented
3. 62
  Dependent← claim 57GaN
  The integrated device of claim 57, further comprising a third layer comprising porous gallium nitride having an n-type conductivity located on a side of the ﬁrst layer opposite the substrate. Previously presented
66
IndependentGaNGaNintegrated optoelectronic device with porous GaN distributed Bragg reflector
A method for making an integrated optoelectronic device, the method comprising: forming a ﬁrst layer comprising gallium nitride on a substrate; forming a second layer comprising gallium nitride having an n-type conductivity on a side of the ﬁrst layer opposite the substrate; forming an active region on a side of the second layer opposite the ﬁrst layer; and electrochemically etching the second layer to form a ﬁrst porous layer that is one layer of a distributed Bragg reﬂector. Previously presented
1. 67
  Dependent← claim 66GaN
  The method of claim 66, wherein forming the second layer comprises doping the second layer to greater than 2x10 1 8 cm⁻³. Previously presented
2. 74
  Dependent← claim 66GaN
  The method of claim 66, further comprising: forming a third layer comprising gallium nitride having an n-type conductivity that is diﬀerent from the n-type conductivity of the second layer; and electrochemically etching the third layer to form a second porous layer that is a second layer of the distributed Bragg reﬂector. Previously presented
75
IndependentGaNGaN
A method of lateral etching to form porous gallium nitride layers for optoelectronic devices, the method comprising: forming a ﬁrst layer comprising gallium nitride on a substrate; forming a second layer comprising gallium nitride having an n-type conductivity on a side of the ﬁrst layer opposite the substrate; forming a third layer comprising gallium nitride having a ﬁrst conductivity on a side of the second layer opposite the ﬁrst layer; exposing a side wall of the second layer; and electrochemically and laterally etching the second layer between the ﬁrst and third layers to form a ﬁrst porous gallium nitride layer. Previously presented
1. 76
  Dependent← claim 75GaN
  The method of claim 75, wherein forming the second layer comprises doping the second layer to greater than 2x10 1 8 cm⁻³. Previously presented

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

integrated optoelectronic device with porous GaN distributed Bragg reflector

active_regionactive region

GaNdistributed Bragg reflector layer porous n-GaN

GaNfirst layer

substratesubstrate

vertical-cavity surface-emitting laser or light-emitting diode

No layer stack recorded.

Materials

Materials described outside the worked examples.

gallium nitride

GaN

First Layer

Distributed Bragg Reflector LayerAdditional Distributed Bragg Reflector Layer

Process steps

Additional fabrication and treatment steps described in the patent.

Electrochemical Etching

Step 1

Process details

etchants:oxalic acid, hydrochloric acid, potassium hydroxide

etching direction:lateral or vertical

bias voltage range V:5-30

optical radiation required:false

Materials:

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Methods of generating porous gallium nitride and optoelectronic devices based thereon | Matter42 Literature