Patent
Atlas literature
Patent
US 11,680,476 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic depiction of an AlGaN/GaN HEMT transistor. 30
FIG. 2 depicts an embodiment of an AlGaN/GaN HEMT transistor sensor as part of a sensor package on a drill.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising a transistor capable of operating from 250° C. to 400° C. and at pressures greater than 20,000 psi.
The device of claim 1 capable of operating while experiencing a mechanical shear force of up to 100×g.
The device of claim 1 capable of making measurements comprising wellbore azimuth, wellbore inclination, gravity toolface, magnetic toolface, vibration monitoring, along-string measurements, downhole weight, downhole torque, and gamma-ray detection.
The device of claim 1 wherein the transistor comprises AlGaN/GaN.
The device of claim 1 wherein the transistor comprises Ga₂O₃/GaN.
The device of claim 1 wherein the transistor comprises SiC/GaN.
The device of claim 1 wherein the transistor comprises a heterostructure field-effect transistor or a double-heterostructure field-effect transistor.
The device of claim 1 wherein the transistor is capable of exhibiting breakdown voltages of greater than one kilo-volt. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
high-temperature high-pressure transistor
No layer stack recorded.
heterostructure field-effect transistor (HFET)
No layer stack recorded.
double-heterostructure field-effect transistor (DHFET)
No layer stack recorded.
Materials described outside the worked examples.
transistor material (generic)
AlGaN
GaN
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
breakdown voltage | — | — |
Temperature | 250–400 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,680,476 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic depiction of an AlGaN/GaN HEMT transistor. 30
FIG. 2 depicts an embodiment of an AlGaN/GaN HEMT transistor sensor as part of a sensor package on a drill.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising a transistor capable of operating from 250° C. to 400° C. and at pressures greater than 20,000 psi.
The device of claim 1 capable of operating while experiencing a mechanical shear force of up to 100×g.
The device of claim 1 capable of making measurements comprising wellbore azimuth, wellbore inclination, gravity toolface, magnetic toolface, vibration monitoring, along-string measurements, downhole weight, downhole torque, and gamma-ray detection.
The device of claim 1 wherein the transistor comprises AlGaN/GaN.
The device of claim 1 wherein the transistor comprises Ga₂O₃/GaN.
The device of claim 1 wherein the transistor comprises SiC/GaN.
The device of claim 1 wherein the transistor comprises a heterostructure field-effect transistor or a double-heterostructure field-effect transistor.
The device of claim 1 wherein the transistor is capable of exhibiting breakdown voltages of greater than one kilo-volt. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
high-temperature high-pressure transistor
No layer stack recorded.
heterostructure field-effect transistor (HFET)
No layer stack recorded.
double-heterostructure field-effect transistor (DHFET)
No layer stack recorded.
Materials described outside the worked examples.
transistor material (generic)
AlGaN
GaN
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
breakdown voltage | — | — |
Temperature | 250–400 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,680,476 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic depiction of an AlGaN/GaN HEMT transistor. 30
FIG. 2 depicts an embodiment of an AlGaN/GaN HEMT transistor sensor as part of a sensor package on a drill.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising a transistor capable of operating from 250° C. to 400° C. and at pressures greater than 20,000 psi.
The device of claim 1 capable of operating while experiencing a mechanical shear force of up to 100×g.
The device of claim 1 capable of making measurements comprising wellbore azimuth, wellbore inclination, gravity toolface, magnetic toolface, vibration monitoring, along-string measurements, downhole weight, downhole torque, and gamma-ray detection.
The device of claim 1 wherein the transistor comprises AlGaN/GaN.
The device of claim 1 wherein the transistor comprises Ga₂O₃/GaN.
The device of claim 1 wherein the transistor comprises SiC/GaN.
The device of claim 1 wherein the transistor comprises a heterostructure field-effect transistor or a double-heterostructure field-effect transistor.
The device of claim 1 wherein the transistor is capable of exhibiting breakdown voltages of greater than one kilo-volt. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
high-temperature high-pressure transistor
No layer stack recorded.
heterostructure field-effect transistor (HFET)
No layer stack recorded.
double-heterostructure field-effect transistor (DHFET)
No layer stack recorded.
Materials described outside the worked examples.
transistor material (generic)
AlGaN
GaN
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
breakdown voltage | — | — |
Temperature | 250–400 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,680,476 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic depiction of an AlGaN/GaN HEMT transistor. 30
FIG. 2 depicts an embodiment of an AlGaN/GaN HEMT transistor sensor as part of a sensor package on a drill.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A device comprising a transistor capable of operating from 250° C. to 400° C. and at pressures greater than 20,000 psi.
The device of claim 1 capable of operating while experiencing a mechanical shear force of up to 100×g.
The device of claim 1 capable of making measurements comprising wellbore azimuth, wellbore inclination, gravity toolface, magnetic toolface, vibration monitoring, along-string measurements, downhole weight, downhole torque, and gamma-ray detection.
The device of claim 1 wherein the transistor comprises AlGaN/GaN.
The device of claim 1 wherein the transistor comprises Ga₂O₃/GaN.
The device of claim 1 wherein the transistor comprises SiC/GaN.
The device of claim 1 wherein the transistor comprises a heterostructure field-effect transistor or a double-heterostructure field-effect transistor.
The device of claim 1 wherein the transistor is capable of exhibiting breakdown voltages of greater than one kilo-volt. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
high-temperature high-pressure transistor
No layer stack recorded.
heterostructure field-effect transistor (HFET)
No layer stack recorded.
double-heterostructure field-effect transistor (DHFET)
No layer stack recorded.
Materials described outside the worked examples.
transistor material (generic)
AlGaN
GaN
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
breakdown voltage | — | — |
Temperature | 250–400 °C |
Related documents with shared materials, methods, properties, or citations.
Ga₂O₃
SiC
FIG. 2 depicts an embodiment of an AlGaN/GaN HEMT transistor sensor as part of a sensor package on a drill.
| — |
Temperature | ≤ 175 °C | — |
Temperature | ≥ 250 °C | — |
Pressure | ≥ 20000 psi | — |
Temperature | ≥ 200 °C | — |
Ga₂O₃
SiC
FIG. 2 depicts an embodiment of an AlGaN/GaN HEMT transistor sensor as part of a sensor package on a drill.
| — |
Temperature | ≤ 175 °C | — |
Temperature | ≥ 250 °C | — |
Pressure | ≥ 20000 psi | — |
Temperature | ≥ 200 °C | — |
Ga₂O₃
SiC
FIG. 2 depicts an embodiment of an AlGaN/GaN HEMT transistor sensor as part of a sensor package on a drill.
| — |
Temperature | ≤ 175 °C | — |
Temperature | ≥ 250 °C | — |
Pressure | ≥ 20000 psi | — |
Temperature | ≥ 200 °C | — |
Ga₂O₃
SiC
FIG. 2 depicts an embodiment of an AlGaN/GaN HEMT transistor sensor as part of a sensor package on a drill.
| — |
Temperature | ≤ 175 °C | — |
Temperature | ≥ 250 °C | — |
Pressure | ≥ 20000 psi | — |
Temperature | ≥ 200 °C | — |
