Patent
US 9,056,424METHODS OF TRANSFERRING GRAPHENE AND MANUFACTURING DEVICE USING THE SAME
Xianyu WENXU
US
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Atlas literature
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US 9,056,424Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 H are perspective views illustrating methods of transferring graphene, according to example embodiments; [0018]
FIG. 2 illustrates a structure of a graphene device manufactured by methods of transferring graphene, according to example embodiments; [0019]
FIG. 3 illustrates a structure of a graphene device manufactured by methods of transferring graphene, according to example embodiments; and [0020]
FIG. 4 illustrates a structure of a solar cell including graphene prepared by methods of transferring graphene, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of transferring graphene, the method comprising: forming a sacrificial layer and a graphene layer sequentially on a first substrate; bonding the graphene layer to a target layer; and removing the sacrificial layer using a laser to separate the first substrate from the graphene layer, wherein the removing entirely removes the sacrificial layer.
The method according to claim 1, wherein the removing the sacrificial layer includes removing the sacrificial layer made of a material that shatters when a gas is generated by the laser.
The method according to claim 1, wherein the forming a sacrificial layer forms the sacrificial layer having a melting point lower than that of a layer adjacent to the sacrificial layer.
The method according to claim 1, wherein the forming a sacrificial layer forms at least one of TiN, TaN, A l N, WN, NiO, Ti O 2, Ta₂ O5, ZnO, Ce O2, PZT, BTO, and LMO.
The method according to claim 1, wherein the removing irradiates the sacrificial layer through the first substrate. Page 2 SVG 13918066.01-12-2015.I₅₆X₉Q₇EPXXIFW4.CLM7846144.5.1354.140.2280.239.svg 0.33 3.087 Graph Black and white
The method according to claim 1, wherein the removing uses an excimer laser.
The method according to claim 1, wherein the removing separates the first substrate from. the graphene layer while the first substrate is immersed in a deionized water (DI) solution.
The method according to claim 1, wherein the forming a sacrificial layer and a graphene layer comprises: forming the sacrificial layer on the first substrate; forming a catalyst layer on the sacrificial layer; and growing the graphene layer on the catalyst layer.
The method according to claim 1, wherein the forming a sacrificial layer and a graphene layer includes forming an insulating material on the graphene layer.
A method of manufacturing a device including graphene, the method comprising: transferring the graphene layer to a second substrate according to the method of claim 1; and forming a device including the graphene layer on the second substrate.
Materials described outside the worked examples.
sacrificial layer
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–15 µm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,056,424Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 H are perspective views illustrating methods of transferring graphene, according to example embodiments; [0018]
FIG. 2 illustrates a structure of a graphene device manufactured by methods of transferring graphene, according to example embodiments; [0019]
FIG. 3 illustrates a structure of a graphene device manufactured by methods of transferring graphene, according to example embodiments; and [0020]
FIG. 4 illustrates a structure of a solar cell including graphene prepared by methods of transferring graphene, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of transferring graphene, the method comprising: forming a sacrificial layer and a graphene layer sequentially on a first substrate; bonding the graphene layer to a target layer; and removing the sacrificial layer using a laser to separate the first substrate from the graphene layer, wherein the removing entirely removes the sacrificial layer.
The method according to claim 1, wherein the removing the sacrificial layer includes removing the sacrificial layer made of a material that shatters when a gas is generated by the laser.
The method according to claim 1, wherein the forming a sacrificial layer forms the sacrificial layer having a melting point lower than that of a layer adjacent to the sacrificial layer.
The method according to claim 1, wherein the forming a sacrificial layer forms at least one of TiN, TaN, A l N, WN, NiO, Ti O 2, Ta₂ O5, ZnO, Ce O2, PZT, BTO, and LMO.
The method according to claim 1, wherein the removing irradiates the sacrificial layer through the first substrate. Page 2 SVG 13918066.01-12-2015.I₅₆X₉Q₇EPXXIFW4.CLM7846144.5.1354.140.2280.239.svg 0.33 3.087 Graph Black and white
The method according to claim 1, wherein the removing uses an excimer laser.
The method according to claim 1, wherein the removing separates the first substrate from. the graphene layer while the first substrate is immersed in a deionized water (DI) solution.
The method according to claim 1, wherein the forming a sacrificial layer and a graphene layer comprises: forming the sacrificial layer on the first substrate; forming a catalyst layer on the sacrificial layer; and growing the graphene layer on the catalyst layer.
The method according to claim 1, wherein the forming a sacrificial layer and a graphene layer includes forming an insulating material on the graphene layer.
A method of manufacturing a device including graphene, the method comprising: transferring the graphene layer to a second substrate according to the method of claim 1; and forming a device including the graphene layer on the second substrate.
Materials described outside the worked examples.
sacrificial layer
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–15 µm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,056,424Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 H are perspective views illustrating methods of transferring graphene, according to example embodiments; [0018]
FIG. 2 illustrates a structure of a graphene device manufactured by methods of transferring graphene, according to example embodiments; [0019]
FIG. 3 illustrates a structure of a graphene device manufactured by methods of transferring graphene, according to example embodiments; and [0020]
FIG. 4 illustrates a structure of a solar cell including graphene prepared by methods of transferring graphene, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of transferring graphene, the method comprising: forming a sacrificial layer and a graphene layer sequentially on a first substrate; bonding the graphene layer to a target layer; and removing the sacrificial layer using a laser to separate the first substrate from the graphene layer, wherein the removing entirely removes the sacrificial layer.
The method according to claim 1, wherein the removing the sacrificial layer includes removing the sacrificial layer made of a material that shatters when a gas is generated by the laser.
The method according to claim 1, wherein the forming a sacrificial layer forms the sacrificial layer having a melting point lower than that of a layer adjacent to the sacrificial layer.
The method according to claim 1, wherein the forming a sacrificial layer forms at least one of TiN, TaN, A l N, WN, NiO, Ti O 2, Ta₂ O5, ZnO, Ce O2, PZT, BTO, and LMO.
The method according to claim 1, wherein the removing irradiates the sacrificial layer through the first substrate. Page 2 SVG 13918066.01-12-2015.I₅₆X₉Q₇EPXXIFW4.CLM7846144.5.1354.140.2280.239.svg 0.33 3.087 Graph Black and white
The method according to claim 1, wherein the removing uses an excimer laser.
The method according to claim 1, wherein the removing separates the first substrate from. the graphene layer while the first substrate is immersed in a deionized water (DI) solution.
The method according to claim 1, wherein the forming a sacrificial layer and a graphene layer comprises: forming the sacrificial layer on the first substrate; forming a catalyst layer on the sacrificial layer; and growing the graphene layer on the catalyst layer.
The method according to claim 1, wherein the forming a sacrificial layer and a graphene layer includes forming an insulating material on the graphene layer.
A method of manufacturing a device including graphene, the method comprising: transferring the graphene layer to a second substrate according to the method of claim 1; and forming a device including the graphene layer on the second substrate.
Materials described outside the worked examples.
sacrificial layer
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–15 µm | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,056,424Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 A to 1 H are perspective views illustrating methods of transferring graphene, according to example embodiments; [0018]
FIG. 2 illustrates a structure of a graphene device manufactured by methods of transferring graphene, according to example embodiments; [0019]
FIG. 3 illustrates a structure of a graphene device manufactured by methods of transferring graphene, according to example embodiments; and [0020]
FIG. 4 illustrates a structure of a solar cell including graphene prepared by methods of transferring graphene, according to example embodiments.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of transferring graphene, the method comprising: forming a sacrificial layer and a graphene layer sequentially on a first substrate; bonding the graphene layer to a target layer; and removing the sacrificial layer using a laser to separate the first substrate from the graphene layer, wherein the removing entirely removes the sacrificial layer.
The method according to claim 1, wherein the removing the sacrificial layer includes removing the sacrificial layer made of a material that shatters when a gas is generated by the laser.
The method according to claim 1, wherein the forming a sacrificial layer forms the sacrificial layer having a melting point lower than that of a layer adjacent to the sacrificial layer.
The method according to claim 1, wherein the forming a sacrificial layer forms at least one of TiN, TaN, A l N, WN, NiO, Ti O 2, Ta₂ O5, ZnO, Ce O2, PZT, BTO, and LMO.
The method according to claim 1, wherein the removing irradiates the sacrificial layer through the first substrate. Page 2 SVG 13918066.01-12-2015.I₅₆X₉Q₇EPXXIFW4.CLM7846144.5.1354.140.2280.239.svg 0.33 3.087 Graph Black and white
The method according to claim 1, wherein the removing uses an excimer laser.
The method according to claim 1, wherein the removing separates the first substrate from. the graphene layer while the first substrate is immersed in a deionized water (DI) solution.
The method according to claim 1, wherein the forming a sacrificial layer and a graphene layer comprises: forming the sacrificial layer on the first substrate; forming a catalyst layer on the sacrificial layer; and growing the graphene layer on the catalyst layer.
The method according to claim 1, wherein the forming a sacrificial layer and a graphene layer includes forming an insulating material on the graphene layer.
A method of manufacturing a device including graphene, the method comprising: transferring the graphene layer to a second substrate according to the method of claim 1; and forming a device including the graphene layer on the second substrate.
Materials described outside the worked examples.
sacrificial layer
graphene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 1–15 µm | — |
Related documents with shared materials, methods, properties, or citations.
TiN
TaN
AlN
WN
NiO
TiO₂
Ta₂O₅
ZnO
CeO₂
PZT
PbZrxTi₁-xO₃
BTO
BaTiO₃
LMO
LaMnO₃
catalyst layer
insulating material
first substrate
quartz
sapphire
fused silica
TiN
TaN
AlN
WN
NiO
TiO₂
Ta₂O₅
ZnO
CeO₂
PZT
PbZrxTi₁-xO₃
BTO
BaTiO₃
LMO
LaMnO₃
catalyst layer
insulating material
first substrate
quartz
sapphire
fused silica
TiN
TaN
AlN
WN
NiO
TiO₂
Ta₂O₅
ZnO
CeO₂
PZT
PbZrxTi₁-xO₃
BTO
BaTiO₃
LMO
LaMnO₃
catalyst layer
insulating material
first substrate
quartz
sapphire
fused silica
TiN
TaN
AlN
WN
NiO
TiO₂
Ta₂O₅
ZnO
CeO₂
PZT
PbZrxTi₁-xO₃
BTO
BaTiO₃
LMO
LaMnO₃
catalyst layer
insulating material
first substrate
quartz
sapphire
fused silica