Patent
US 9,546,995NANOPORE DEVICE INCLUDING GRAPHENE NANOPORE AND METHOD OF MANUFACTURING THE SAME
Tae-han JEON
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,546,995Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a structure of a nanopore device according to an example embodiment; [0027]
FIG. 2 is a schematic plan view illustrating a disposition relation between a first insulating layer, a graphene layer, electrode layers, and a second …
FIG. 3 is a schematic diagram illustrating a plurality of graphene layer portions at which nanopores are formed in the nanopore device illustrated in
FIGS. 4A to 4L are cross-sectional views illustrating a process of manufacturing the nanopore device illustrated in
FIG. 41, the center portions of the dielectric layer 28 and the insulating layer 29 located under the substrate 21 are etched and removed. Then, the center …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanopore device comprising: a first insulating layer; a multilayer graphene structure disposed on the first insulating layer and having a nanopore disposed at a center portion of the multilayer graphene structure; and first and second electrode layers disposed respectively at opposite sides of the nanopore on a top surface of the multilayer graphene structure, wherein a center region of the first insulating layer has been removed such that the center portion of the multilayer graphene structure is exposed, wherein the multilayer graphene structure comprises: a bottom graphene layer disposed on the first insulating layer; an intermediate graphene layer directly disposed on the bottom graphene layer; and a top graphene layer directly disposed on the intermediate graphene layer, a center portion of an upper surface of the top graphene laver being exposed, wherein each of the bottom, intermediate and top graphene layers is formed of graphene, wherein a width of the removed center region of the first insulating la y er is lar g er than a diameter of the nanopore such that a center portion of a lower surface of the bottom graphene laver is exposed.
The nanopore device of claim 1, further comprising a second insulating layer disposed on the multilayer graphene structure and which covers entire side surfaces and entire top surfaces of the first and second electrode layers such that all surfaces of the first and second electrode layers are sealed by between the second insulating layer and the multila y er graphene structure, thereby preventing a current leakage. Page 2 of 10 Application No. 14/257,654 Reply to Non-Final Office Action
The nanopore device of claim 1, wherein an exposed region of the top graphene layer and the bottom graphene layer among the at least three graphene layers is passivated to have insulating properties.
The nanopore device of claim 1, wherein the intermediate graphene layer among the at least three graphene layers is conductive.
The nanopore device of claim 1, further comprising a substrate disposed under the first insulating layer, wherein an opening is disposed at a center portion of the substrate so as to expose the nanopore.
The nanopore device of claim 1, further comprising: a first power supply unit configured to generate an electric field between a sample solution, which is disposed on the nanopore, and an electrolyte, which is disposed under the nanopore; and a second power supply unit configured to apply a voltage between the first electrode layer and the second electrode layer.
The nanopore device of claim 1, wherein the multilayer graphene structure has a thickness of about 1 nm.
The nanopore device of claim 1, wherein lengths of the bottom, intermediate and top graphene layers are identical to each other. Page 6 of
canceled
The nanopore device of claim [[1]]5, wherein the passivation passivated exposed region of the top graphene laver and the bottom graphene laver combines at least one element of fluorine (F), chlorine (Cl), and bromine (Br) at exposed surfaces of the top graphene layer and the bottom graphene layer.
A method of manufacturing a nanopore device, comprising: providing a substrate; sequentially forming a dielectric layer and a first insulating layer on a top surface of the substrate; forming a graphene layer on the first insulating layer; forming first and second electrode layers respectively at opposite sides of a center region on the graphene layer and patterning the graphene layer; exposing a bottom surface of a center region of the first insulating layer and a bottom surface of the center region of the graphene layer by etching a center portion of the substrate; passivating an exposed surface of the graphene layer; and forming a nanopore at an exposed region of the graphene layer. withdrawn
The method of claim 12, wherein the forming of the graphene layer comp ri ses: partially etching and removing a center portion of the first insulating layer and filling the removed region of the center portion of the first insulating layer with a selective etch layer; and transferring a graphene layer onto the first insulating layer and the selective etch layer. withdrawn
The method of claim 12, wherein the forming of the first and second electrode layers and patterning of the graphene layer comprises: forming a conductive layer on the graphene layer and patterning the conductive layer; Page 4 of 10 Application No. 14/257,654 Reply to Non-Final Office Action using the patterned conductive layer as a mask, removing the exposed graphene layer leaving only the graphene layer under the patterned conductive layer; and removing a center portion of the conductive layer to form divided first and second electrode layers, and exposing a center portion of the graphene layer. withdrawn
The method of claim 12, wherein the graphene layer comprises a multilayer graphene structure having a stack of at least three graphene layers, wherein an exposed region of the top graphene layer and the bottom graphene layer among the at least three graphene layers is passivated to have insulating properties. Page 5 of 10 Application No. 14/257,654 Reply to NonFinal Office Action withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
nanopore device with multilayer graphene structure
Materials described outside the worked examples.
bottom graphene layer
intermediate graphene layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
multilayer graphene structure thickness | 1 nm | bottom graphene layerintermediate graphene layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,546,995Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a structure of a nanopore device according to an example embodiment; [0027]
FIG. 2 is a schematic plan view illustrating a disposition relation between a first insulating layer, a graphene layer, electrode layers, and a second …
FIG. 3 is a schematic diagram illustrating a plurality of graphene layer portions at which nanopores are formed in the nanopore device illustrated in
FIGS. 4A to 4L are cross-sectional views illustrating a process of manufacturing the nanopore device illustrated in
FIG. 41, the center portions of the dielectric layer 28 and the insulating layer 29 located under the substrate 21 are etched and removed. Then, the center …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanopore device comprising: a first insulating layer; a multilayer graphene structure disposed on the first insulating layer and having a nanopore disposed at a center portion of the multilayer graphene structure; and first and second electrode layers disposed respectively at opposite sides of the nanopore on a top surface of the multilayer graphene structure, wherein a center region of the first insulating layer has been removed such that the center portion of the multilayer graphene structure is exposed, wherein the multilayer graphene structure comprises: a bottom graphene layer disposed on the first insulating layer; an intermediate graphene layer directly disposed on the bottom graphene layer; and a top graphene layer directly disposed on the intermediate graphene layer, a center portion of an upper surface of the top graphene laver being exposed, wherein each of the bottom, intermediate and top graphene layers is formed of graphene, wherein a width of the removed center region of the first insulating la y er is lar g er than a diameter of the nanopore such that a center portion of a lower surface of the bottom graphene laver is exposed.
The nanopore device of claim 1, further comprising a second insulating layer disposed on the multilayer graphene structure and which covers entire side surfaces and entire top surfaces of the first and second electrode layers such that all surfaces of the first and second electrode layers are sealed by between the second insulating layer and the multila y er graphene structure, thereby preventing a current leakage. Page 2 of 10 Application No. 14/257,654 Reply to Non-Final Office Action
The nanopore device of claim 1, wherein an exposed region of the top graphene layer and the bottom graphene layer among the at least three graphene layers is passivated to have insulating properties.
The nanopore device of claim 1, wherein the intermediate graphene layer among the at least three graphene layers is conductive.
The nanopore device of claim 1, further comprising a substrate disposed under the first insulating layer, wherein an opening is disposed at a center portion of the substrate so as to expose the nanopore.
The nanopore device of claim 1, further comprising: a first power supply unit configured to generate an electric field between a sample solution, which is disposed on the nanopore, and an electrolyte, which is disposed under the nanopore; and a second power supply unit configured to apply a voltage between the first electrode layer and the second electrode layer.
The nanopore device of claim 1, wherein the multilayer graphene structure has a thickness of about 1 nm.
The nanopore device of claim 1, wherein lengths of the bottom, intermediate and top graphene layers are identical to each other. Page 6 of
canceled
The nanopore device of claim [[1]]5, wherein the passivation passivated exposed region of the top graphene laver and the bottom graphene laver combines at least one element of fluorine (F), chlorine (Cl), and bromine (Br) at exposed surfaces of the top graphene layer and the bottom graphene layer.
A method of manufacturing a nanopore device, comprising: providing a substrate; sequentially forming a dielectric layer and a first insulating layer on a top surface of the substrate; forming a graphene layer on the first insulating layer; forming first and second electrode layers respectively at opposite sides of a center region on the graphene layer and patterning the graphene layer; exposing a bottom surface of a center region of the first insulating layer and a bottom surface of the center region of the graphene layer by etching a center portion of the substrate; passivating an exposed surface of the graphene layer; and forming a nanopore at an exposed region of the graphene layer. withdrawn
The method of claim 12, wherein the forming of the graphene layer comp ri ses: partially etching and removing a center portion of the first insulating layer and filling the removed region of the center portion of the first insulating layer with a selective etch layer; and transferring a graphene layer onto the first insulating layer and the selective etch layer. withdrawn
The method of claim 12, wherein the forming of the first and second electrode layers and patterning of the graphene layer comprises: forming a conductive layer on the graphene layer and patterning the conductive layer; Page 4 of 10 Application No. 14/257,654 Reply to Non-Final Office Action using the patterned conductive layer as a mask, removing the exposed graphene layer leaving only the graphene layer under the patterned conductive layer; and removing a center portion of the conductive layer to form divided first and second electrode layers, and exposing a center portion of the graphene layer. withdrawn
The method of claim 12, wherein the graphene layer comprises a multilayer graphene structure having a stack of at least three graphene layers, wherein an exposed region of the top graphene layer and the bottom graphene layer among the at least three graphene layers is passivated to have insulating properties. Page 5 of 10 Application No. 14/257,654 Reply to NonFinal Office Action withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
nanopore device with multilayer graphene structure
Materials described outside the worked examples.
bottom graphene layer
intermediate graphene layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
multilayer graphene structure thickness | 1 nm | bottom graphene layerintermediate graphene layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,546,995Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a structure of a nanopore device according to an example embodiment; [0027]
FIG. 2 is a schematic plan view illustrating a disposition relation between a first insulating layer, a graphene layer, electrode layers, and a second …
FIG. 3 is a schematic diagram illustrating a plurality of graphene layer portions at which nanopores are formed in the nanopore device illustrated in
FIGS. 4A to 4L are cross-sectional views illustrating a process of manufacturing the nanopore device illustrated in
FIG. 41, the center portions of the dielectric layer 28 and the insulating layer 29 located under the substrate 21 are etched and removed. Then, the center …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanopore device comprising: a first insulating layer; a multilayer graphene structure disposed on the first insulating layer and having a nanopore disposed at a center portion of the multilayer graphene structure; and first and second electrode layers disposed respectively at opposite sides of the nanopore on a top surface of the multilayer graphene structure, wherein a center region of the first insulating layer has been removed such that the center portion of the multilayer graphene structure is exposed, wherein the multilayer graphene structure comprises: a bottom graphene layer disposed on the first insulating layer; an intermediate graphene layer directly disposed on the bottom graphene layer; and a top graphene layer directly disposed on the intermediate graphene layer, a center portion of an upper surface of the top graphene laver being exposed, wherein each of the bottom, intermediate and top graphene layers is formed of graphene, wherein a width of the removed center region of the first insulating la y er is lar g er than a diameter of the nanopore such that a center portion of a lower surface of the bottom graphene laver is exposed.
The nanopore device of claim 1, further comprising a second insulating layer disposed on the multilayer graphene structure and which covers entire side surfaces and entire top surfaces of the first and second electrode layers such that all surfaces of the first and second electrode layers are sealed by between the second insulating layer and the multila y er graphene structure, thereby preventing a current leakage. Page 2 of 10 Application No. 14/257,654 Reply to Non-Final Office Action
The nanopore device of claim 1, wherein an exposed region of the top graphene layer and the bottom graphene layer among the at least three graphene layers is passivated to have insulating properties.
The nanopore device of claim 1, wherein the intermediate graphene layer among the at least three graphene layers is conductive.
The nanopore device of claim 1, further comprising a substrate disposed under the first insulating layer, wherein an opening is disposed at a center portion of the substrate so as to expose the nanopore.
The nanopore device of claim 1, further comprising: a first power supply unit configured to generate an electric field between a sample solution, which is disposed on the nanopore, and an electrolyte, which is disposed under the nanopore; and a second power supply unit configured to apply a voltage between the first electrode layer and the second electrode layer.
The nanopore device of claim 1, wherein the multilayer graphene structure has a thickness of about 1 nm.
The nanopore device of claim 1, wherein lengths of the bottom, intermediate and top graphene layers are identical to each other. Page 6 of
canceled
The nanopore device of claim [[1]]5, wherein the passivation passivated exposed region of the top graphene laver and the bottom graphene laver combines at least one element of fluorine (F), chlorine (Cl), and bromine (Br) at exposed surfaces of the top graphene layer and the bottom graphene layer.
A method of manufacturing a nanopore device, comprising: providing a substrate; sequentially forming a dielectric layer and a first insulating layer on a top surface of the substrate; forming a graphene layer on the first insulating layer; forming first and second electrode layers respectively at opposite sides of a center region on the graphene layer and patterning the graphene layer; exposing a bottom surface of a center region of the first insulating layer and a bottom surface of the center region of the graphene layer by etching a center portion of the substrate; passivating an exposed surface of the graphene layer; and forming a nanopore at an exposed region of the graphene layer. withdrawn
The method of claim 12, wherein the forming of the graphene layer comp ri ses: partially etching and removing a center portion of the first insulating layer and filling the removed region of the center portion of the first insulating layer with a selective etch layer; and transferring a graphene layer onto the first insulating layer and the selective etch layer. withdrawn
The method of claim 12, wherein the forming of the first and second electrode layers and patterning of the graphene layer comprises: forming a conductive layer on the graphene layer and patterning the conductive layer; Page 4 of 10 Application No. 14/257,654 Reply to Non-Final Office Action using the patterned conductive layer as a mask, removing the exposed graphene layer leaving only the graphene layer under the patterned conductive layer; and removing a center portion of the conductive layer to form divided first and second electrode layers, and exposing a center portion of the graphene layer. withdrawn
The method of claim 12, wherein the graphene layer comprises a multilayer graphene structure having a stack of at least three graphene layers, wherein an exposed region of the top graphene layer and the bottom graphene layer among the at least three graphene layers is passivated to have insulating properties. Page 5 of 10 Application No. 14/257,654 Reply to NonFinal Office Action withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
nanopore device with multilayer graphene structure
Materials described outside the worked examples.
bottom graphene layer
intermediate graphene layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
multilayer graphene structure thickness | 1 nm | bottom graphene layerintermediate graphene layer |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,546,995Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view illustrating a structure of a nanopore device according to an example embodiment; [0027]
FIG. 2 is a schematic plan view illustrating a disposition relation between a first insulating layer, a graphene layer, electrode layers, and a second …
FIG. 3 is a schematic diagram illustrating a plurality of graphene layer portions at which nanopores are formed in the nanopore device illustrated in
FIGS. 4A to 4L are cross-sectional views illustrating a process of manufacturing the nanopore device illustrated in
FIG. 41, the center portions of the dielectric layer 28 and the insulating layer 29 located under the substrate 21 are etched and removed. Then, the center …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanopore device comprising: a first insulating layer; a multilayer graphene structure disposed on the first insulating layer and having a nanopore disposed at a center portion of the multilayer graphene structure; and first and second electrode layers disposed respectively at opposite sides of the nanopore on a top surface of the multilayer graphene structure, wherein a center region of the first insulating layer has been removed such that the center portion of the multilayer graphene structure is exposed, wherein the multilayer graphene structure comprises: a bottom graphene layer disposed on the first insulating layer; an intermediate graphene layer directly disposed on the bottom graphene layer; and a top graphene layer directly disposed on the intermediate graphene layer, a center portion of an upper surface of the top graphene laver being exposed, wherein each of the bottom, intermediate and top graphene layers is formed of graphene, wherein a width of the removed center region of the first insulating la y er is lar g er than a diameter of the nanopore such that a center portion of a lower surface of the bottom graphene laver is exposed.
The nanopore device of claim 1, further comprising a second insulating layer disposed on the multilayer graphene structure and which covers entire side surfaces and entire top surfaces of the first and second electrode layers such that all surfaces of the first and second electrode layers are sealed by between the second insulating layer and the multila y er graphene structure, thereby preventing a current leakage. Page 2 of 10 Application No. 14/257,654 Reply to Non-Final Office Action
The nanopore device of claim 1, wherein an exposed region of the top graphene layer and the bottom graphene layer among the at least three graphene layers is passivated to have insulating properties.
The nanopore device of claim 1, wherein the intermediate graphene layer among the at least three graphene layers is conductive.
The nanopore device of claim 1, further comprising a substrate disposed under the first insulating layer, wherein an opening is disposed at a center portion of the substrate so as to expose the nanopore.
The nanopore device of claim 1, further comprising: a first power supply unit configured to generate an electric field between a sample solution, which is disposed on the nanopore, and an electrolyte, which is disposed under the nanopore; and a second power supply unit configured to apply a voltage between the first electrode layer and the second electrode layer.
The nanopore device of claim 1, wherein the multilayer graphene structure has a thickness of about 1 nm.
The nanopore device of claim 1, wherein lengths of the bottom, intermediate and top graphene layers are identical to each other. Page 6 of
canceled
The nanopore device of claim [[1]]5, wherein the passivation passivated exposed region of the top graphene laver and the bottom graphene laver combines at least one element of fluorine (F), chlorine (Cl), and bromine (Br) at exposed surfaces of the top graphene layer and the bottom graphene layer.
A method of manufacturing a nanopore device, comprising: providing a substrate; sequentially forming a dielectric layer and a first insulating layer on a top surface of the substrate; forming a graphene layer on the first insulating layer; forming first and second electrode layers respectively at opposite sides of a center region on the graphene layer and patterning the graphene layer; exposing a bottom surface of a center region of the first insulating layer and a bottom surface of the center region of the graphene layer by etching a center portion of the substrate; passivating an exposed surface of the graphene layer; and forming a nanopore at an exposed region of the graphene layer. withdrawn
The method of claim 12, wherein the forming of the graphene layer comp ri ses: partially etching and removing a center portion of the first insulating layer and filling the removed region of the center portion of the first insulating layer with a selective etch layer; and transferring a graphene layer onto the first insulating layer and the selective etch layer. withdrawn
The method of claim 12, wherein the forming of the first and second electrode layers and patterning of the graphene layer comprises: forming a conductive layer on the graphene layer and patterning the conductive layer; Page 4 of 10 Application No. 14/257,654 Reply to Non-Final Office Action using the patterned conductive layer as a mask, removing the exposed graphene layer leaving only the graphene layer under the patterned conductive layer; and removing a center portion of the conductive layer to form divided first and second electrode layers, and exposing a center portion of the graphene layer. withdrawn
The method of claim 12, wherein the graphene layer comprises a multilayer graphene structure having a stack of at least three graphene layers, wherein an exposed region of the top graphene layer and the bottom graphene layer among the at least three graphene layers is passivated to have insulating properties. Page 5 of 10 Application No. 14/257,654 Reply to NonFinal Office Action withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
nanopore device with multilayer graphene structure
Materials described outside the worked examples.
bottom graphene layer
intermediate graphene layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
multilayer graphene structure thickness | 1 nm | bottom graphene layerintermediate graphene layer |
Related documents with shared materials, methods, properties, or citations.
top graphene layer
second insulating layer
amorphous silicon selective etch layer
first insulating layer
SiO₂
SiNx
Al₂O₃
gold
Au
titanium
Ti
first and second insulating layer thickness | 30 nm | first insulating layersecond insulating layer |
nanopore diameter upper bound | 10 nm | — |
Thickness | 100–300 nm | — |
top graphene layer
second insulating layer
amorphous silicon selective etch layer
first insulating layer
SiO₂
SiNx
Al₂O₃
gold
Au
titanium
Ti
first and second insulating layer thickness | 30 nm | first insulating layersecond insulating layer |
nanopore diameter upper bound | 10 nm | — |
Thickness | 100–300 nm | — |
top graphene layer
second insulating layer
amorphous silicon selective etch layer
first insulating layer
SiO₂
SiNx
Al₂O₃
gold
Au
titanium
Ti
first and second insulating layer thickness | 30 nm | first insulating layersecond insulating layer |
nanopore diameter upper bound | 10 nm | — |
Thickness | 100–300 nm | — |
top graphene layer
second insulating layer
amorphous silicon selective etch layer
first insulating layer
SiO₂
SiNx
Al₂O₃
gold
Au
titanium
Ti
first and second insulating layer thickness | 30 nm | first insulating layersecond insulating layer |
nanopore diameter upper bound | 10 nm | — |
Thickness | 100–300 nm | — |