Patent
US 10,325,851GRAPHENE WIRING STRUCTURE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING GRAPHENE WIRING STRUCTURE, AND METHOD FOR MANUFACTURING WIRING STRUCTURE
Hisao MIYAZAKI
US
Copyright © 2026 Matter42. All rights reserved.
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US 10,325,851Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sch e matic diagram of a graphene wiring structure according to an embodiment; [0006]
FIG. 2 is a graph illustrating a relationsh i p between an angle of a zigzag direction of graphene crystals with respect to an el ectric c o nduct io n direct …
FIG. 3B. SVG 15691257.08-30-2017.J₆ZIHZ₅DRXEAPX2.SPEC.13.1.1749.291.1761.319.svg 0.093 0.04 Chemistry Black and white [0048] F I G. 3D is a schematic diagram …
FIG. 4 illustrates the z i gzag direction of the microcrystalline graphene 3. T he insulating film 1 is not formed of singl e crystals but is p o lycrystallin …
FIG. 5 is a process diagram of a graph e ne wiring structure according to an embodiment; [0010] F I G. 6 is a process diagram of a graphene wir ing str u cture …
FIGS. 6 and 7 are common to the above-descr i bed manufacturing method. [0059] A method for man u fact u ring the graphene wiring structure 10 including the …
FIG. 7. I n the schematic diagram of F I G. 7, a plurality of the multilayer graphenes 2 of the graphene wir ing structure 10 is present, and is arranged in …
FIG. 8 is a process diagram of a graphene wir ing struc t ure according to an embodiment; [0013] F I G. 9 is a process diagram of a graphene wiring structure …
FIG. 10A illustrates a member in which the first micr o crystallin e graphene 3A is provided o n the insulating film 1. The crystal orie n tati o n of t h is …
FIG. 11 A, additional growth of a graphene is performed in a similar ma ni ner to the f irst e mbodime n t, and the memb er in which a polycrysta lli ne …
FIG. 12 is a schematic diagram of a wiring structure acc o rding to a n embodiment; [001/]
FIGS. 13 to 19 are top diagrams viewed from a Y direction. [0073] First, as illustrated in the process diagram of SVG …
FIG. 14 is a process diagram of a wi ri ng structure of an emb o diment; [0019] F IG. 15 is a process diagram of a wiri n g struc t ure of an embodiments; …
FIG. 16, the liquid crystal 24, the monomer 25, and the polymerization initiator 2 6 o n the crystal layer 23B in which crystals are not oriented in the ul t …
FIG. 17 is a pr o cess diagram of a w i ring structure of an emb o diment; [0022]
FIG. 18, when the polymer mask 27 is remov e d, a member in which the crysta l laye r 23A having a uniform crystal orientation is disposed i s obtained on the …
FIG. 19 is a pr o cess diagram of a wiring structure of an emb odime nt; [0024]
FIG. 20 is a schematic diagram of a graphen e wiring structure acc o rding to an emb o diment; and [0025] F IG. 2 1 i s a schematic diagram of a semiconductor …
FIG. 21 illustrates a sc hem atic cross-sectional diagram of a three- di mensi on al NAND type flash memory as an example of a semico n duc tor device …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene wiring structure comprising: an amorphous or polycrystalline insulating film; and a multilayer graphene on the amorphous or polycr y stalline insulating film, the multilayer graphene including a plurality of graphene crystals having a zigzag direction oriented at 17 degrees or less w ith respect to an electric conduction direction, wherein the zigzag direction of the plurality of graphene crystals which are oriented linearly is uniform within 17 degrees with respect to the electric conduction direction. Currently amended
The structure according to claim 1, wherein the multilayer graphene is a laminate of a plurality of strip-shaped graphene sheets. Original
The structure according to claim 1, further comprising a cyclic structure of a five-membered ring or a seven-membered ring in the graphene crystals. Original
The structure according to claim 1, wherein the average particle diameter of the plurality of graphene crystals is larger than the width of the multilayer graphene. Currently amended
The structure according to claim 1, wherein the electric conduction direction is a longitudinal direction of the multilayer graphene. Original
The structure according to claim 1, wherein the zigzag direction of the plurality of graphene c r ystals with respect to the electric conduction di rection is 1 degree or m ore. Currently amended
The structure according to claim 1, wherein the amorphous or polycrystalline insulating film contains at least one selected from the group consisting of SiO 2, A 12O 3, and Ti O 2. Currently amended
The structure according to claim 1, further comprising a conductive portion electrically connected to the multilayer graphene in the amorphous or polycrystalline insulating film. Currently amended
The structure according to claim 1, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 17 degrees or less with respect to the electric conduction direction. Original
The structure according to claim 1, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 13 degrees or less with respect to the electric conduction direction. Original
1: The structure according to claim 1, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 11 degrees or less with respect to the electric conduction direction. Original
A semiconductor device using the graphene wiring structure according to claim 1. Withdrawn
The structure according to claim 1, wherein an entirely of the plurality of graphene crystals have the zigzag direction oriented at 17 degrees or less with respect to the electric conduction direction. New
The st ru cture according to claim 1, wherein a crystallinity of the plurality of the graphene crystals is not corresponding to a c r ystallinity of the amorphous or polycrystalline insulating film. New
The st ru cture according to claim 1, the multilayer graphene is directly on the amorphous or polycrystalline insulating film. New
Claims 13-17. Canceled
Canceled
A graphene wiring structure comprising: an amorphous or polycrystalline insulating film; and a multilayer graphene on the amorphous or polycrystalline insulating film, the multilayer graphene including a plurality of graphene crystals, wherein an entirely of the plurality of graphene crystals have a zigzag direction oriented at 17 degrees or less with respect to the electric conduction direction. New
The structure according to claim 19, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 17 degrees or less with respect to the electric conduction direction. New
The structure according to claim 19, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 13 degrees or less with respect to the electric conduction direction. New
The st ru cture according to claim 19, a crystallinity of the plurality of the graphene crystals is not corresponding to a crystallinity of the amorphous or polycrystalline insulating film. New
The st ru cture according to claim 19, the multilayer graphene is directly on the amorphous or polycrystalline insulating film. New
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring structure
Materials described outside the worked examples.
amorphous or polycrystalline insulating film
multilayer graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph illustrating a relationsh i p between an angle of a zigzag direction of graphene crystals with respect to an el ectric c o nduct io n direct …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,325,851Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sch e matic diagram of a graphene wiring structure according to an embodiment; [0006]
FIG. 2 is a graph illustrating a relationsh i p between an angle of a zigzag direction of graphene crystals with respect to an el ectric c o nduct io n direct …
FIG. 3B. SVG 15691257.08-30-2017.J₆ZIHZ₅DRXEAPX2.SPEC.13.1.1749.291.1761.319.svg 0.093 0.04 Chemistry Black and white [0048] F I G. 3D is a schematic diagram …
FIG. 4 illustrates the z i gzag direction of the microcrystalline graphene 3. T he insulating film 1 is not formed of singl e crystals but is p o lycrystallin …
FIG. 5 is a process diagram of a graph e ne wiring structure according to an embodiment; [0010] F I G. 6 is a process diagram of a graphene wir ing str u cture …
FIGS. 6 and 7 are common to the above-descr i bed manufacturing method. [0059] A method for man u fact u ring the graphene wiring structure 10 including the …
FIG. 7. I n the schematic diagram of F I G. 7, a plurality of the multilayer graphenes 2 of the graphene wir ing structure 10 is present, and is arranged in …
FIG. 8 is a process diagram of a graphene wir ing struc t ure according to an embodiment; [0013] F I G. 9 is a process diagram of a graphene wiring structure …
FIG. 10A illustrates a member in which the first micr o crystallin e graphene 3A is provided o n the insulating film 1. The crystal orie n tati o n of t h is …
FIG. 11 A, additional growth of a graphene is performed in a similar ma ni ner to the f irst e mbodime n t, and the memb er in which a polycrysta lli ne …
FIG. 12 is a schematic diagram of a wiring structure acc o rding to a n embodiment; [001/]
FIGS. 13 to 19 are top diagrams viewed from a Y direction. [0073] First, as illustrated in the process diagram of SVG …
FIG. 14 is a process diagram of a wi ri ng structure of an emb o diment; [0019] F IG. 15 is a process diagram of a wiri n g struc t ure of an embodiments; …
FIG. 16, the liquid crystal 24, the monomer 25, and the polymerization initiator 2 6 o n the crystal layer 23B in which crystals are not oriented in the ul t …
FIG. 17 is a pr o cess diagram of a w i ring structure of an emb o diment; [0022]
FIG. 18, when the polymer mask 27 is remov e d, a member in which the crysta l laye r 23A having a uniform crystal orientation is disposed i s obtained on the …
FIG. 19 is a pr o cess diagram of a wiring structure of an emb odime nt; [0024]
FIG. 20 is a schematic diagram of a graphen e wiring structure acc o rding to an emb o diment; and [0025] F IG. 2 1 i s a schematic diagram of a semiconductor …
FIG. 21 illustrates a sc hem atic cross-sectional diagram of a three- di mensi on al NAND type flash memory as an example of a semico n duc tor device …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene wiring structure comprising: an amorphous or polycrystalline insulating film; and a multilayer graphene on the amorphous or polycr y stalline insulating film, the multilayer graphene including a plurality of graphene crystals having a zigzag direction oriented at 17 degrees or less w ith respect to an electric conduction direction, wherein the zigzag direction of the plurality of graphene crystals which are oriented linearly is uniform within 17 degrees with respect to the electric conduction direction. Currently amended
The structure according to claim 1, wherein the multilayer graphene is a laminate of a plurality of strip-shaped graphene sheets. Original
The structure according to claim 1, further comprising a cyclic structure of a five-membered ring or a seven-membered ring in the graphene crystals. Original
The structure according to claim 1, wherein the average particle diameter of the plurality of graphene crystals is larger than the width of the multilayer graphene. Currently amended
The structure according to claim 1, wherein the electric conduction direction is a longitudinal direction of the multilayer graphene. Original
The structure according to claim 1, wherein the zigzag direction of the plurality of graphene c r ystals with respect to the electric conduction di rection is 1 degree or m ore. Currently amended
The structure according to claim 1, wherein the amorphous or polycrystalline insulating film contains at least one selected from the group consisting of SiO 2, A 12O 3, and Ti O 2. Currently amended
The structure according to claim 1, further comprising a conductive portion electrically connected to the multilayer graphene in the amorphous or polycrystalline insulating film. Currently amended
The structure according to claim 1, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 17 degrees or less with respect to the electric conduction direction. Original
The structure according to claim 1, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 13 degrees or less with respect to the electric conduction direction. Original
1: The structure according to claim 1, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 11 degrees or less with respect to the electric conduction direction. Original
A semiconductor device using the graphene wiring structure according to claim 1. Withdrawn
The structure according to claim 1, wherein an entirely of the plurality of graphene crystals have the zigzag direction oriented at 17 degrees or less with respect to the electric conduction direction. New
The st ru cture according to claim 1, wherein a crystallinity of the plurality of the graphene crystals is not corresponding to a c r ystallinity of the amorphous or polycrystalline insulating film. New
The st ru cture according to claim 1, the multilayer graphene is directly on the amorphous or polycrystalline insulating film. New
Claims 13-17. Canceled
Canceled
A graphene wiring structure comprising: an amorphous or polycrystalline insulating film; and a multilayer graphene on the amorphous or polycrystalline insulating film, the multilayer graphene including a plurality of graphene crystals, wherein an entirely of the plurality of graphene crystals have a zigzag direction oriented at 17 degrees or less with respect to the electric conduction direction. New
The structure according to claim 19, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 17 degrees or less with respect to the electric conduction direction. New
The structure according to claim 19, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 13 degrees or less with respect to the electric conduction direction. New
The st ru cture according to claim 19, a crystallinity of the plurality of the graphene crystals is not corresponding to a crystallinity of the amorphous or polycrystalline insulating film. New
The st ru cture according to claim 19, the multilayer graphene is directly on the amorphous or polycrystalline insulating film. New
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring structure
Materials described outside the worked examples.
amorphous or polycrystalline insulating film
multilayer graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph illustrating a relationsh i p between an angle of a zigzag direction of graphene crystals with respect to an el ectric c o nduct io n direct …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,325,851Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sch e matic diagram of a graphene wiring structure according to an embodiment; [0006]
FIG. 2 is a graph illustrating a relationsh i p between an angle of a zigzag direction of graphene crystals with respect to an el ectric c o nduct io n direct …
FIG. 3B. SVG 15691257.08-30-2017.J₆ZIHZ₅DRXEAPX2.SPEC.13.1.1749.291.1761.319.svg 0.093 0.04 Chemistry Black and white [0048] F I G. 3D is a schematic diagram …
FIG. 4 illustrates the z i gzag direction of the microcrystalline graphene 3. T he insulating film 1 is not formed of singl e crystals but is p o lycrystallin …
FIG. 5 is a process diagram of a graph e ne wiring structure according to an embodiment; [0010] F I G. 6 is a process diagram of a graphene wir ing str u cture …
FIGS. 6 and 7 are common to the above-descr i bed manufacturing method. [0059] A method for man u fact u ring the graphene wiring structure 10 including the …
FIG. 7. I n the schematic diagram of F I G. 7, a plurality of the multilayer graphenes 2 of the graphene wir ing structure 10 is present, and is arranged in …
FIG. 8 is a process diagram of a graphene wir ing struc t ure according to an embodiment; [0013] F I G. 9 is a process diagram of a graphene wiring structure …
FIG. 10A illustrates a member in which the first micr o crystallin e graphene 3A is provided o n the insulating film 1. The crystal orie n tati o n of t h is …
FIG. 11 A, additional growth of a graphene is performed in a similar ma ni ner to the f irst e mbodime n t, and the memb er in which a polycrysta lli ne …
FIG. 12 is a schematic diagram of a wiring structure acc o rding to a n embodiment; [001/]
FIGS. 13 to 19 are top diagrams viewed from a Y direction. [0073] First, as illustrated in the process diagram of SVG …
FIG. 14 is a process diagram of a wi ri ng structure of an emb o diment; [0019] F IG. 15 is a process diagram of a wiri n g struc t ure of an embodiments; …
FIG. 16, the liquid crystal 24, the monomer 25, and the polymerization initiator 2 6 o n the crystal layer 23B in which crystals are not oriented in the ul t …
FIG. 17 is a pr o cess diagram of a w i ring structure of an emb o diment; [0022]
FIG. 18, when the polymer mask 27 is remov e d, a member in which the crysta l laye r 23A having a uniform crystal orientation is disposed i s obtained on the …
FIG. 19 is a pr o cess diagram of a wiring structure of an emb odime nt; [0024]
FIG. 20 is a schematic diagram of a graphen e wiring structure acc o rding to an emb o diment; and [0025] F IG. 2 1 i s a schematic diagram of a semiconductor …
FIG. 21 illustrates a sc hem atic cross-sectional diagram of a three- di mensi on al NAND type flash memory as an example of a semico n duc tor device …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene wiring structure comprising: an amorphous or polycrystalline insulating film; and a multilayer graphene on the amorphous or polycr y stalline insulating film, the multilayer graphene including a plurality of graphene crystals having a zigzag direction oriented at 17 degrees or less w ith respect to an electric conduction direction, wherein the zigzag direction of the plurality of graphene crystals which are oriented linearly is uniform within 17 degrees with respect to the electric conduction direction. Currently amended
The structure according to claim 1, wherein the multilayer graphene is a laminate of a plurality of strip-shaped graphene sheets. Original
The structure according to claim 1, further comprising a cyclic structure of a five-membered ring or a seven-membered ring in the graphene crystals. Original
The structure according to claim 1, wherein the average particle diameter of the plurality of graphene crystals is larger than the width of the multilayer graphene. Currently amended
The structure according to claim 1, wherein the electric conduction direction is a longitudinal direction of the multilayer graphene. Original
The structure according to claim 1, wherein the zigzag direction of the plurality of graphene c r ystals with respect to the electric conduction di rection is 1 degree or m ore. Currently amended
The structure according to claim 1, wherein the amorphous or polycrystalline insulating film contains at least one selected from the group consisting of SiO 2, A 12O 3, and Ti O 2. Currently amended
The structure according to claim 1, further comprising a conductive portion electrically connected to the multilayer graphene in the amorphous or polycrystalline insulating film. Currently amended
The structure according to claim 1, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 17 degrees or less with respect to the electric conduction direction. Original
The structure according to claim 1, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 13 degrees or less with respect to the electric conduction direction. Original
1: The structure according to claim 1, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 11 degrees or less with respect to the electric conduction direction. Original
A semiconductor device using the graphene wiring structure according to claim 1. Withdrawn
The structure according to claim 1, wherein an entirely of the plurality of graphene crystals have the zigzag direction oriented at 17 degrees or less with respect to the electric conduction direction. New
The st ru cture according to claim 1, wherein a crystallinity of the plurality of the graphene crystals is not corresponding to a c r ystallinity of the amorphous or polycrystalline insulating film. New
The st ru cture according to claim 1, the multilayer graphene is directly on the amorphous or polycrystalline insulating film. New
Claims 13-17. Canceled
Canceled
A graphene wiring structure comprising: an amorphous or polycrystalline insulating film; and a multilayer graphene on the amorphous or polycrystalline insulating film, the multilayer graphene including a plurality of graphene crystals, wherein an entirely of the plurality of graphene crystals have a zigzag direction oriented at 17 degrees or less with respect to the electric conduction direction. New
The structure according to claim 19, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 17 degrees or less with respect to the electric conduction direction. New
The structure according to claim 19, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 13 degrees or less with respect to the electric conduction direction. New
The st ru cture according to claim 19, a crystallinity of the plurality of the graphene crystals is not corresponding to a crystallinity of the amorphous or polycrystalline insulating film. New
The st ru cture according to claim 19, the multilayer graphene is directly on the amorphous or polycrystalline insulating film. New
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring structure
Materials described outside the worked examples.
amorphous or polycrystalline insulating film
multilayer graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph illustrating a relationsh i p between an angle of a zigzag direction of graphene crystals with respect to an el ectric c o nduct io n direct …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,325,851Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a sch e matic diagram of a graphene wiring structure according to an embodiment; [0006]
FIG. 2 is a graph illustrating a relationsh i p between an angle of a zigzag direction of graphene crystals with respect to an el ectric c o nduct io n direct …
FIG. 3B. SVG 15691257.08-30-2017.J₆ZIHZ₅DRXEAPX2.SPEC.13.1.1749.291.1761.319.svg 0.093 0.04 Chemistry Black and white [0048] F I G. 3D is a schematic diagram …
FIG. 4 illustrates the z i gzag direction of the microcrystalline graphene 3. T he insulating film 1 is not formed of singl e crystals but is p o lycrystallin …
FIG. 5 is a process diagram of a graph e ne wiring structure according to an embodiment; [0010] F I G. 6 is a process diagram of a graphene wir ing str u cture …
FIGS. 6 and 7 are common to the above-descr i bed manufacturing method. [0059] A method for man u fact u ring the graphene wiring structure 10 including the …
FIG. 7. I n the schematic diagram of F I G. 7, a plurality of the multilayer graphenes 2 of the graphene wir ing structure 10 is present, and is arranged in …
FIG. 8 is a process diagram of a graphene wir ing struc t ure according to an embodiment; [0013] F I G. 9 is a process diagram of a graphene wiring structure …
FIG. 10A illustrates a member in which the first micr o crystallin e graphene 3A is provided o n the insulating film 1. The crystal orie n tati o n of t h is …
FIG. 11 A, additional growth of a graphene is performed in a similar ma ni ner to the f irst e mbodime n t, and the memb er in which a polycrysta lli ne …
FIG. 12 is a schematic diagram of a wiring structure acc o rding to a n embodiment; [001/]
FIGS. 13 to 19 are top diagrams viewed from a Y direction. [0073] First, as illustrated in the process diagram of SVG …
FIG. 14 is a process diagram of a wi ri ng structure of an emb o diment; [0019] F IG. 15 is a process diagram of a wiri n g struc t ure of an embodiments; …
FIG. 16, the liquid crystal 24, the monomer 25, and the polymerization initiator 2 6 o n the crystal layer 23B in which crystals are not oriented in the ul t …
FIG. 17 is a pr o cess diagram of a w i ring structure of an emb o diment; [0022]
FIG. 18, when the polymer mask 27 is remov e d, a member in which the crysta l laye r 23A having a uniform crystal orientation is disposed i s obtained on the …
FIG. 19 is a pr o cess diagram of a wiring structure of an emb odime nt; [0024]
FIG. 20 is a schematic diagram of a graphen e wiring structure acc o rding to an emb o diment; and [0025] F IG. 2 1 i s a schematic diagram of a semiconductor …
FIG. 21 illustrates a sc hem atic cross-sectional diagram of a three- di mensi on al NAND type flash memory as an example of a semico n duc tor device …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene wiring structure comprising: an amorphous or polycrystalline insulating film; and a multilayer graphene on the amorphous or polycr y stalline insulating film, the multilayer graphene including a plurality of graphene crystals having a zigzag direction oriented at 17 degrees or less w ith respect to an electric conduction direction, wherein the zigzag direction of the plurality of graphene crystals which are oriented linearly is uniform within 17 degrees with respect to the electric conduction direction. Currently amended
The structure according to claim 1, wherein the multilayer graphene is a laminate of a plurality of strip-shaped graphene sheets. Original
The structure according to claim 1, further comprising a cyclic structure of a five-membered ring or a seven-membered ring in the graphene crystals. Original
The structure according to claim 1, wherein the average particle diameter of the plurality of graphene crystals is larger than the width of the multilayer graphene. Currently amended
The structure according to claim 1, wherein the electric conduction direction is a longitudinal direction of the multilayer graphene. Original
The structure according to claim 1, wherein the zigzag direction of the plurality of graphene c r ystals with respect to the electric conduction di rection is 1 degree or m ore. Currently amended
The structure according to claim 1, wherein the amorphous or polycrystalline insulating film contains at least one selected from the group consisting of SiO 2, A 12O 3, and Ti O 2. Currently amended
The structure according to claim 1, further comprising a conductive portion electrically connected to the multilayer graphene in the amorphous or polycrystalline insulating film. Currently amended
The structure according to claim 1, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 17 degrees or less with respect to the electric conduction direction. Original
The structure according to claim 1, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 13 degrees or less with respect to the electric conduction direction. Original
1: The structure according to claim 1, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 11 degrees or less with respect to the electric conduction direction. Original
A semiconductor device using the graphene wiring structure according to claim 1. Withdrawn
The structure according to claim 1, wherein an entirely of the plurality of graphene crystals have the zigzag direction oriented at 17 degrees or less with respect to the electric conduction direction. New
The st ru cture according to claim 1, wherein a crystallinity of the plurality of the graphene crystals is not corresponding to a c r ystallinity of the amorphous or polycrystalline insulating film. New
The st ru cture according to claim 1, the multilayer graphene is directly on the amorphous or polycrystalline insulating film. New
Claims 13-17. Canceled
Canceled
A graphene wiring structure comprising: an amorphous or polycrystalline insulating film; and a multilayer graphene on the amorphous or polycrystalline insulating film, the multilayer graphene including a plurality of graphene crystals, wherein an entirely of the plurality of graphene crystals have a zigzag direction oriented at 17 degrees or less with respect to the electric conduction direction. New
The structure according to claim 19, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 17 degrees or less with respect to the electric conduction direction. New
The structure according to claim 19, wherein the plurality of graphene crystals has the zigzag direction oriented at 1 degree or more and 13 degrees or less with respect to the electric conduction direction. New
The st ru cture according to claim 19, a crystallinity of the plurality of the graphene crystals is not corresponding to a crystallinity of the amorphous or polycrystalline insulating film. New
The st ru cture according to claim 19, the multilayer graphene is directly on the amorphous or polycrystalline insulating film. New
Layer stacks claimed or described, ordered top of device to substrate.
graphene wiring structure
Materials described outside the worked examples.
amorphous or polycrystalline insulating film
multilayer graphene
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 is a graph illustrating a relationsh i p between an angle of a zigzag direction of graphene crystals with respect to an el ectric c o nduct io n direct …
Related documents with shared materials, methods, properties, or citations.
SiO₂
Al₂O₃
TiO₂
FIG. 2 is a graph illustrating a relationsh i p between an angle of a zigzag direction of graphene crystals with respect to an el ectric c o nduct io n direct …
SiO₂
Al₂O₃
TiO₂
FIG. 2 is a graph illustrating a relationsh i p between an angle of a zigzag direction of graphene crystals with respect to an el ectric c o nduct io n direct …
SiO₂
Al₂O₃
TiO₂
FIG. 2 is a graph illustrating a relationsh i p between an angle of a zigzag direction of graphene crystals with respect to an el ectric c o nduct io n direct …
SiO₂
Al₂O₃
TiO₂
FIG. 2 is a graph illustrating a relationsh i p between an angle of a zigzag direction of graphene crystals with respect to an el ectric c o nduct io n direct …