Patent
Atlas literature
Patent
US 9,859,513Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multi-terminal device, comprising a substrate with an atomically- thin source electrode and an atomically-thin drain electrode both on a top surface thereof, wherein the source electrode and the drain electrode are separated by a nanogap of between 0.1 and 100 nm and commensurate with each other, and at least one atomically-thin channel material with a uniform crystallographic orientation to at least one commensurate electrode, wherein the atomically-thin channel material is deposited on top of the source and drain electrodes and bridges over the nanogap to form a device architecture, wherein a first overlap between the atomically-thin channel and the source electrode and a second overlap between the atomically-thin channel and the drain electrode provide uniform electrical interfaces. Currently amended
The multi-terminal device of claim 1, wherein the channel material has the same uniform crystallographic orientation to multiple commensurate electrodes. Original
The multi-terminal device of claim 1, wherein the channel material is perpendicular to the nanogap. Original
The multi-terminal device of claim 1, wherein the channel material is selected from the group consisting of, for example, carbon nanotubes, graphene, M o S 2, WSe2, transition metal dichalcogenides, and black phosphorous. Original
The multi-terminal device of claim 1, wherein the channel material comprises a carbon nanotube or a nanotube constructed from another 2D material. Original
The multi-terminal device of claim 1, wherein the channel material comprises at least two carbon nanotubes or two nanotubes constructed from another 2D material that bridge the nanogap. Original
The multi-terminal device of claim 1, wherein within the nanogap lies at least one graphene nanoribbon commensurate with the other nearby graphene. Original
The multi-terminal device of claim 1, further comprising a dielectric layer between the device architecture and a conducting layer. Original
The multi-terminal device of claim 1, wherein the nanogap is between 0.1 nm and 10 nm. Original
The multi-terminal device of claim 1, wherein the nanogap is a crystallographically uniform channel between the graphene source electrode and the graphene drain electrode. Original
The multi-terminal device of claim 1, wherein each material of the device architecture is atomically thin. Original
The multi-terminal device of claim 1, wherein the source electrode is comprised of graphene. Original
The multi-terminal device of claim 1, wherein the drain electrode is comprised of graphene. Original
A method of preparing a multi-terminal device, comprising: providing a source electrode and a drain electrode on a substrate material that are separated by a nanogap, wherein the source electrode and the drain electrode are commensurate with each other; and, depositing a channel material on the source electrode and the drain electrode that bridges over the nanogap, wherein the channel material crystallographically aligns with at least one electrode and further wherein a first overlap between the atomically- thin channel and the source electrode and a second overlap between the atomically- thin channel and the drain electrode provide uniform electrical interfaces. Currently amended
The method of claim 17, wherein the channel atomically-thin material. Original
The method of claim 17, wherein the other group consisting of transition metal dichalcogenides, from laminar materials. Original
The method of claim 17, wherein the source
The method of claim 17, wherein the drain
The method of claim 17, wherein the nanogap uniform channel between the graphene source Original material comprises a carbon nanotube or other atomically thin material is selected from the black phosphorous, and nanotubes formed electrode is comprised of g rap he ne. Original electrode is comprised of g rap he ne. Original provides a crystallographically and spatially electrode and the graphene drain electrode.
Layer stacks claimed or described, ordered top of device to substrate.
multi-terminal device with atomically-thin commensurate electrodes and nanogap channel
few-layer graphene nanogap (GNG) device with carbon nanotube channel
Materials described outside the worked examples.
atomically-thin channel material
atomically-thin source electrode
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 32–40 nm | — |
Thickness | 5–6 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,859,513Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multi-terminal device, comprising a substrate with an atomically- thin source electrode and an atomically-thin drain electrode both on a top surface thereof, wherein the source electrode and the drain electrode are separated by a nanogap of between 0.1 and 100 nm and commensurate with each other, and at least one atomically-thin channel material with a uniform crystallographic orientation to at least one commensurate electrode, wherein the atomically-thin channel material is deposited on top of the source and drain electrodes and bridges over the nanogap to form a device architecture, wherein a first overlap between the atomically-thin channel and the source electrode and a second overlap between the atomically-thin channel and the drain electrode provide uniform electrical interfaces. Currently amended
The multi-terminal device of claim 1, wherein the channel material has the same uniform crystallographic orientation to multiple commensurate electrodes. Original
The multi-terminal device of claim 1, wherein the channel material is perpendicular to the nanogap. Original
The multi-terminal device of claim 1, wherein the channel material is selected from the group consisting of, for example, carbon nanotubes, graphene, M o S 2, WSe2, transition metal dichalcogenides, and black phosphorous. Original
The multi-terminal device of claim 1, wherein the channel material comprises a carbon nanotube or a nanotube constructed from another 2D material. Original
The multi-terminal device of claim 1, wherein the channel material comprises at least two carbon nanotubes or two nanotubes constructed from another 2D material that bridge the nanogap. Original
The multi-terminal device of claim 1, wherein within the nanogap lies at least one graphene nanoribbon commensurate with the other nearby graphene. Original
The multi-terminal device of claim 1, further comprising a dielectric layer between the device architecture and a conducting layer. Original
The multi-terminal device of claim 1, wherein the nanogap is between 0.1 nm and 10 nm. Original
The multi-terminal device of claim 1, wherein the nanogap is a crystallographically uniform channel between the graphene source electrode and the graphene drain electrode. Original
The multi-terminal device of claim 1, wherein each material of the device architecture is atomically thin. Original
The multi-terminal device of claim 1, wherein the source electrode is comprised of graphene. Original
The multi-terminal device of claim 1, wherein the drain electrode is comprised of graphene. Original
A method of preparing a multi-terminal device, comprising: providing a source electrode and a drain electrode on a substrate material that are separated by a nanogap, wherein the source electrode and the drain electrode are commensurate with each other; and, depositing a channel material on the source electrode and the drain electrode that bridges over the nanogap, wherein the channel material crystallographically aligns with at least one electrode and further wherein a first overlap between the atomically- thin channel and the source electrode and a second overlap between the atomically- thin channel and the drain electrode provide uniform electrical interfaces. Currently amended
The method of claim 17, wherein the channel atomically-thin material. Original
The method of claim 17, wherein the other group consisting of transition metal dichalcogenides, from laminar materials. Original
The method of claim 17, wherein the source
The method of claim 17, wherein the drain
The method of claim 17, wherein the nanogap uniform channel between the graphene source Original material comprises a carbon nanotube or other atomically thin material is selected from the black phosphorous, and nanotubes formed electrode is comprised of g rap he ne. Original electrode is comprised of g rap he ne. Original provides a crystallographically and spatially electrode and the graphene drain electrode.
Layer stacks claimed or described, ordered top of device to substrate.
multi-terminal device with atomically-thin commensurate electrodes and nanogap channel
few-layer graphene nanogap (GNG) device with carbon nanotube channel
Materials described outside the worked examples.
atomically-thin channel material
atomically-thin source electrode
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 32–40 nm | — |
Thickness | 5–6 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,859,513Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multi-terminal device, comprising a substrate with an atomically- thin source electrode and an atomically-thin drain electrode both on a top surface thereof, wherein the source electrode and the drain electrode are separated by a nanogap of between 0.1 and 100 nm and commensurate with each other, and at least one atomically-thin channel material with a uniform crystallographic orientation to at least one commensurate electrode, wherein the atomically-thin channel material is deposited on top of the source and drain electrodes and bridges over the nanogap to form a device architecture, wherein a first overlap between the atomically-thin channel and the source electrode and a second overlap between the atomically-thin channel and the drain electrode provide uniform electrical interfaces. Currently amended
The multi-terminal device of claim 1, wherein the channel material has the same uniform crystallographic orientation to multiple commensurate electrodes. Original
The multi-terminal device of claim 1, wherein the channel material is perpendicular to the nanogap. Original
The multi-terminal device of claim 1, wherein the channel material is selected from the group consisting of, for example, carbon nanotubes, graphene, M o S 2, WSe2, transition metal dichalcogenides, and black phosphorous. Original
The multi-terminal device of claim 1, wherein the channel material comprises a carbon nanotube or a nanotube constructed from another 2D material. Original
The multi-terminal device of claim 1, wherein the channel material comprises at least two carbon nanotubes or two nanotubes constructed from another 2D material that bridge the nanogap. Original
The multi-terminal device of claim 1, wherein within the nanogap lies at least one graphene nanoribbon commensurate with the other nearby graphene. Original
The multi-terminal device of claim 1, further comprising a dielectric layer between the device architecture and a conducting layer. Original
The multi-terminal device of claim 1, wherein the nanogap is between 0.1 nm and 10 nm. Original
The multi-terminal device of claim 1, wherein the nanogap is a crystallographically uniform channel between the graphene source electrode and the graphene drain electrode. Original
The multi-terminal device of claim 1, wherein each material of the device architecture is atomically thin. Original
The multi-terminal device of claim 1, wherein the source electrode is comprised of graphene. Original
The multi-terminal device of claim 1, wherein the drain electrode is comprised of graphene. Original
A method of preparing a multi-terminal device, comprising: providing a source electrode and a drain electrode on a substrate material that are separated by a nanogap, wherein the source electrode and the drain electrode are commensurate with each other; and, depositing a channel material on the source electrode and the drain electrode that bridges over the nanogap, wherein the channel material crystallographically aligns with at least one electrode and further wherein a first overlap between the atomically- thin channel and the source electrode and a second overlap between the atomically- thin channel and the drain electrode provide uniform electrical interfaces. Currently amended
The method of claim 17, wherein the channel atomically-thin material. Original
The method of claim 17, wherein the other group consisting of transition metal dichalcogenides, from laminar materials. Original
The method of claim 17, wherein the source
The method of claim 17, wherein the drain
The method of claim 17, wherein the nanogap uniform channel between the graphene source Original material comprises a carbon nanotube or other atomically thin material is selected from the black phosphorous, and nanotubes formed electrode is comprised of g rap he ne. Original electrode is comprised of g rap he ne. Original provides a crystallographically and spatially electrode and the graphene drain electrode.
Layer stacks claimed or described, ordered top of device to substrate.
multi-terminal device with atomically-thin commensurate electrodes and nanogap channel
few-layer graphene nanogap (GNG) device with carbon nanotube channel
Materials described outside the worked examples.
atomically-thin channel material
atomically-thin source electrode
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 32–40 nm | — |
Thickness | 5–6 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,859,513Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A multi-terminal device, comprising a substrate with an atomically- thin source electrode and an atomically-thin drain electrode both on a top surface thereof, wherein the source electrode and the drain electrode are separated by a nanogap of between 0.1 and 100 nm and commensurate with each other, and at least one atomically-thin channel material with a uniform crystallographic orientation to at least one commensurate electrode, wherein the atomically-thin channel material is deposited on top of the source and drain electrodes and bridges over the nanogap to form a device architecture, wherein a first overlap between the atomically-thin channel and the source electrode and a second overlap between the atomically-thin channel and the drain electrode provide uniform electrical interfaces. Currently amended
The multi-terminal device of claim 1, wherein the channel material has the same uniform crystallographic orientation to multiple commensurate electrodes. Original
The multi-terminal device of claim 1, wherein the channel material is perpendicular to the nanogap. Original
The multi-terminal device of claim 1, wherein the channel material is selected from the group consisting of, for example, carbon nanotubes, graphene, M o S 2, WSe2, transition metal dichalcogenides, and black phosphorous. Original
The multi-terminal device of claim 1, wherein the channel material comprises a carbon nanotube or a nanotube constructed from another 2D material. Original
The multi-terminal device of claim 1, wherein the channel material comprises at least two carbon nanotubes or two nanotubes constructed from another 2D material that bridge the nanogap. Original
The multi-terminal device of claim 1, wherein within the nanogap lies at least one graphene nanoribbon commensurate with the other nearby graphene. Original
The multi-terminal device of claim 1, further comprising a dielectric layer between the device architecture and a conducting layer. Original
The multi-terminal device of claim 1, wherein the nanogap is between 0.1 nm and 10 nm. Original
The multi-terminal device of claim 1, wherein the nanogap is a crystallographically uniform channel between the graphene source electrode and the graphene drain electrode. Original
The multi-terminal device of claim 1, wherein each material of the device architecture is atomically thin. Original
The multi-terminal device of claim 1, wherein the source electrode is comprised of graphene. Original
The multi-terminal device of claim 1, wherein the drain electrode is comprised of graphene. Original
A method of preparing a multi-terminal device, comprising: providing a source electrode and a drain electrode on a substrate material that are separated by a nanogap, wherein the source electrode and the drain electrode are commensurate with each other; and, depositing a channel material on the source electrode and the drain electrode that bridges over the nanogap, wherein the channel material crystallographically aligns with at least one electrode and further wherein a first overlap between the atomically- thin channel and the source electrode and a second overlap between the atomically- thin channel and the drain electrode provide uniform electrical interfaces. Currently amended
The method of claim 17, wherein the channel atomically-thin material. Original
The method of claim 17, wherein the other group consisting of transition metal dichalcogenides, from laminar materials. Original
The method of claim 17, wherein the source
The method of claim 17, wherein the drain
The method of claim 17, wherein the nanogap uniform channel between the graphene source Original material comprises a carbon nanotube or other atomically thin material is selected from the black phosphorous, and nanotubes formed electrode is comprised of g rap he ne. Original electrode is comprised of g rap he ne. Original provides a crystallographically and spatially electrode and the graphene drain electrode.
Layer stacks claimed or described, ordered top of device to substrate.
multi-terminal device with atomically-thin commensurate electrodes and nanogap channel
few-layer graphene nanogap (GNG) device with carbon nanotube channel
Materials described outside the worked examples.
atomically-thin channel material
atomically-thin source electrode
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 32–40 nm | — |
Thickness | 5–6 nm |
Related documents with shared materials, methods, properties, or citations.
atomically-thin drain electrode
carbon nanotube
graphene
MoS₂
WSe₂
transition metal dichalcogenides
black phosphorous
nanotube from 2D material
graphene nanoribbon
dielectric layer
SiO₂
Al₂O₃
BN
| — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 0.1–10 nm | — |
Thickness | 0.3–100 nm | — |
atomically-thin drain electrode
carbon nanotube
graphene
MoS₂
WSe₂
transition metal dichalcogenides
black phosphorous
nanotube from 2D material
graphene nanoribbon
dielectric layer
SiO₂
Al₂O₃
BN
| — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 0.1–10 nm | — |
Thickness | 0.3–100 nm | — |
atomically-thin drain electrode
carbon nanotube
graphene
MoS₂
WSe₂
transition metal dichalcogenides
black phosphorous
nanotube from 2D material
graphene nanoribbon
dielectric layer
SiO₂
Al₂O₃
BN
| — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 0.1–10 nm | — |
Thickness | 0.3–100 nm | — |
atomically-thin drain electrode
carbon nanotube
graphene
MoS₂
WSe₂
transition metal dichalcogenides
black phosphorous
nanotube from 2D material
graphene nanoribbon
dielectric layer
SiO₂
Al₂O₃
BN
| — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 0.5 nm | — |
Thickness | 0.1–100 nm | — |
Thickness | 0.1–10 nm | — |
Thickness | 0.3–100 nm | — |
