A GaN series LED structure, including: a substrate; at least one GaN series layer, wherein the GaN series layer is formed over said substrate; a light-emitting layer, wherein the light-emitting layer is formed over said GaN series layer; a p-type GaN serieslayer, wherein the p-type GaN series layer is formed over said light-emitting layer; and at least one interface blocking layer, wherein the interface blocking layer is formed between said GaN series layer and said light-emitting layer.

A GaN series LED structure, including: a substrate; a GaN series buffer layer, wherein the GaN series buffer layer is formed over said substrate; a first n-type GaN series superlattice structure layer, wherein the first n-type 15 GaN series superlattice structure layer is formed over the GaN series buffer layer; a first n-type GaN series layer, wherein the first n-type GaN series layer is formed over said first n-type GaN series superlattice structure layer; a second n-type GaN series superlattice structure layer, wherein the second n- type GaN series superlattice structure layer is formed over said first n-type GaN series layer; a third n-type GaN series layer, wherein the third n-type GaN series layer is formed over said second n-type GaN series superlattice structure layer; a light-emitting layer, wherein the light-emitting layer is formed over said third n- type GaN series layer; and a p-type GaN series layer, wherein the p-type GaN series layer is formed over said light-emitting layer.

A GaN series LED structure, including: a substrate; at least one GaN series layer, wherein the GaN series layer is formed over said substrate; a light-emitting layer, wherein the light-emitting layer is formed over said GaN series layer; a p-type GaN serieslayer, wherein the p-type GaN series layer is formed over said light-emitting layer; and at least one interface blocking layer, wherein the interface blocking layer is formed between said GaN series layer and said light-emitting layer.

A GaN series LED structure, including: a substrate; a GaN series buffer layer, wherein the GaN series buffer layer is formed over said substrate; a first n-type GaN series superlattice structure layer, wherein the first n-type 15 GaN series superlattice structure layer is formed over the GaN series buffer layer; a first n-type GaN series layer, wherein the first n-type GaN series layer is formed over said first n-type GaN series superlattice structure layer; a second n-type GaN series superlattice structure layer, wherein the second n- type GaN series superlattice structure layer is formed over said first n-type GaN series layer; a third n-type GaN series layer, wherein the third n-type GaN series layer is formed over said second n-type GaN series superlattice structure layer; a light-emitting layer, wherein the light-emitting layer is formed over said third n- type GaN series layer; and a p-type GaN series layer, wherein the p-type GaN series layer is formed over said light-emitting layer.

A GaN series LED structure, including: a substrate; at least one GaN series layer, wherein the GaN series layer is formed over said substrate; a light-emitting layer, wherein the light-emitting layer is formed over said GaN series layer; a p-type GaN serieslayer, wherein the p-type GaN series layer is formed over said light-emitting layer; and at least one interface blocking layer, wherein the interface blocking layer is formed between said GaN series layer and said light-emitting layer.

A GaN series LED structure, including: a substrate; a GaN series buffer layer, wherein the GaN series buffer layer is formed over said substrate; a first n-type GaN series superlattice structure layer, wherein the first n-type 15 GaN series superlattice structure layer is formed over the GaN series buffer layer; a first n-type GaN series layer, wherein the first n-type GaN series layer is formed over said first n-type GaN series superlattice structure layer; a second n-type GaN series superlattice structure layer, wherein the second n- type GaN series superlattice structure layer is formed over said first n-type GaN series layer; a third n-type GaN series layer, wherein the third n-type GaN series layer is formed over said second n-type GaN series superlattice structure layer; a light-emitting layer, wherein the light-emitting layer is formed over said third n- type GaN series layer; and a p-type GaN series layer, wherein the p-type GaN series layer is formed over said light-emitting layer.

A GaN series LED structure, including: a substrate; at least one GaN series layer, wherein the GaN series layer is formed over said substrate; a light-emitting layer, wherein the light-emitting layer is formed over said GaN series layer; a p-type GaN serieslayer, wherein the p-type GaN series layer is formed over said light-emitting layer; and at least one interface blocking layer, wherein the interface blocking layer is formed between said GaN series layer and said light-emitting layer.

A GaN series LED structure, including: a substrate; a GaN series buffer layer, wherein the GaN series buffer layer is formed over said substrate; a first n-type GaN series superlattice structure layer, wherein the first n-type 15 GaN series superlattice structure layer is formed over the GaN series buffer layer; a first n-type GaN series layer, wherein the first n-type GaN series layer is formed over said first n-type GaN series superlattice structure layer; a second n-type GaN series superlattice structure layer, wherein the second n- type GaN series superlattice structure layer is formed over said first n-type GaN series layer; a third n-type GaN series layer, wherein the third n-type GaN series layer is formed over said second n-type GaN series superlattice structure layer; a light-emitting layer, wherein the light-emitting layer is formed over said third n- type GaN series layer; and a p-type GaN series layer, wherein the p-type GaN series layer is formed over said light-emitting layer.