Patent
US 9,962,914METHOD FOR TRANSFERRING A LARGE-AREA GRAPHENE SHEET
Farag Saeed Marshoud AL-HAZMI
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,962,914Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B are illustrations of one embodiment of subjecting a graphene 20 film (GF) on the contacting surface of a sheet of a flexible target substrate (FTS) to a …
FIG. 2 is an illustration of another embodiment of subjecting a graphene film (GF) on the contacting surface of a sheet of a flexible target substrate (FTS) to a …
FIG. 3 is a graphical presentation of the Raman spectrum of a monolayered, a bilayered, and a multi-layered graphene film formed on a transparent polymer sheet …
FIG. 4 is a graphical presentation of the optical transmittance of a monolayered, a bilayered, and a multi-layered graphene film formed on a transparent polymer …
FIG. 5 is a graphical presentation of the I (current)-V (voltage) relationship graphs of a monolayered, a bilayered, and a multi-layered graphene film formed on …
FIG. 6 is a graphical presentation of the resistance-mechanical stretching relationship 15 graphs of a monolayered, a bilayered, and a multi-layered graphene …
FIG. 7 is a graphical presentation of the resistance- mechanical bending strain relationship graphs of a monolayered, a bilayered, and a multi-layered graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring a graphene layer on a fi rst substrate onto a second target substrate, comprising: contacting a graphene layer on the fi rst substrate, which comprises one or more layers of graphene formed on a copper fi lm that is formed on a surface of a metal foil, with a contacting surface of the second target substrate under substantially uniform pressure and heat, thereby transferring the at least one graphene layer from the fi rst substrate onto the contacting surface of the second target substrate; wherein the thickness of the copper fi lm that is formed on the surface of the metal foil of the fi rst substrate is about 200-800 nm; and wherein the transferring consists essentially of applying substantially uniform pressure and heat. Currently amended
The method of claim 1, wherein the thickness of the copper fi lm that is formed on the surface of the metal foil of the fi rst substrate is about 400-500 nm. Currently amended
The method of claim 1, wherein the metal foil of the fi rst substrate is an alloy comprising Cu and at least one metal selected from the group consisting of silicon, Ni, Co, Fe, Pt, Au, Al, Cr, Ge, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, and Zr [[,]]. Currently amended
The method of claim 1, wherein the metal foil is a copper foil. Previously presented
The method of claim 1, further comprising growing the one or more graphene layers on the metal foil by contacting the foil with a reaction gas comprising carbon and with heat, thereby growing the one or more graphene layers on the foil. Previously presented
The method of claim 1, wherein the second target substrate comprises at least one selected from the group consisting of a polymer, a polymer mixture, a plastic, a rubber, a glass, a metal, Si, and S iO 2. Previously presented
The method of claim 1, wherein the substantially uniform pressure is at least 5 psi. Original
The method of claim 1, wherein the contacting of the graphene layer on the fi rst substrate to the contacting surface of the second target substrate occurs at a temperature of at least 1 80 0 C. Currently amended
The method of claim 1, wherein the transferring consists essentially of applying substantially uniform pressure of at least 2 psi and heat of at least 150 0 C and substantially uniform pressure and temperature vary by no more than 10% over the contacting surface of the second target substrate. Previously presented
(Pre v iousl y Presented): The method of claim 1, wherein the transferring consists essentially of applying substantially uniform pressure of at least 10 psi and heat of at least 300 0 C and substantially uniform pressure and temperature va rn by no more than 1% over the contacting surface of the second target substrate. Previously presented
A method of transferring a graphene layer on a fi rst substrate onto a flexible second target substrate, comprising: contacting a graphene layer on the fi rst substrate, which comprises one or more layers of graphene formed on a copper fi lm that is formed on a surface of a metal foil, with a contacting surface of the flexible second target substrate under substantially uniform pressure and heat, thereby transferring the at least one graphene layer from the fi rst substrate onto the contacting surface of the fl exible second target substrate, and subjecting the fl exible second target substrate to which the at least one graphene layer has been transferred to at least one blank page printing operation conducted by a printing device which comprises at least one fuser unit that comprises at least one heat roller and at least one pressure roller; wherein during the at least one blank page printing operation the at least one fuser unit applies substantially uniform pressure and heat on the fl exible second target substrate to which the at least one graphene layer has been transferred via the at least one pressure roller and via the at least one heat roller; wherein the thickness of the copper fi lm coating the surface of the metal foil of the fi rst substrate is about 200-800 nm; and wherein the transferring consists essentially of applying substantially uniform pressure and heat. Currently amended
The method of claim 9, wherein the metal foil is etched to remove its surface prior to formation of the copper fi lm on it. Previously presented
The method of claim 9, wherein the flexible second target substrate comprises at least one selected from the group consisting of polyethylene terephthalate, polyimide, cellulose acetate, glass, polyethylene naphthalate, polycarbonate, plastic, and rubber. Previously presented
The method of claim 9, wherein only one layer of graphene on the fi rst substrate is transferred to the contacting surface of the flexible second substrate where it forms a monolayered graphene fi lm. Previously presented
The method of claim 9, wherein the graphene film on the contacting surface of the fl exible second target substrate has a resistance of no greater than 250 Q/cm 2 by a four probe Van der Pauw method. Previously presented
The method of claim 9, further comprising stretching the graphene fi lm on the contacting surface of the flexible second target substrate to form an elongated graphene fi lm, wherein the elongated graphene fi lm has a dimension that is longer, but no greater than about 20 % longer than the graphene fi lm before the stretching, and wherein the elongated graphene fi lm has a resistance that is the same as, or different from, the resistance of the graphene fi lm before the stretching, but no more than about 10 % different from the resistance of the graphene fi lm before the stretching. Previously presented
The method of claim 9, further comprising stretching the graphene fi lm on the contacting surface of the flexible second target substrate to form an elongated graphene fi lm, wherein the elongated graphene fi lm has a dimension that is longer, but no greater than 20 % longer than the graphene fi lm before the stretching, and then relaxing the elongated graphene fi lm from the stretching to form a relaxed graphene fi lm, wherein the relaxed graphene fi lm has a resistance that is the same as, or different from, the resistance of the graphene fi lm before the stretching, but no more than about 10% different from the resistance of the graphene fi lm before the stretching. Previously presented
The method of claim 9, further comprising subjecting the graphene fi lm on the contacting surface of the flexible second target substrate to a bending strain of no greater than about 3 0% to form a bent graphene fi lm, wherein the bent graphene fi lm has a resistance that is the same as, or different from, the resistance of the graphene fi lm before being subjected to the bending strain, but no more than about 10% different from the resistance of the graphene fi lm before being subjected to the bending strain. Previously presented
The method of claim 9, further comprising subjecting the graphene fi lm on the contacting surface of the fl exible second target substrate to a bending strain of no greater than about 3 0% to form a bent graphene fi lm, and then relaxing the bent graphene fi lm from the bending strain to form a relaxed graphene fi lm, wherein the relaxed graphene f ilm has a resistance that is the same as, or different from, the resistance of the graphene film before being subjected to the bending strain, but no more than about 10 % different from the resistance of the graphene film before being subjected to the bending strain. Previously presented
Materials described outside the worked examples.
graphene
C
copper film
Cu
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graphical presentation of the Raman spectrum of a monolayered, a bilayered, and a multi-layered graphene film formed on a transparent polymer sheet …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical transmittance of monolayered graphene film | ≥ 88 % | C |
sheet resistance by four probe Van der Pauw method | ≤ 250 Ω/cm² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,962,914Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B are illustrations of one embodiment of subjecting a graphene 20 film (GF) on the contacting surface of a sheet of a flexible target substrate (FTS) to a …
FIG. 2 is an illustration of another embodiment of subjecting a graphene film (GF) on the contacting surface of a sheet of a flexible target substrate (FTS) to a …
FIG. 3 is a graphical presentation of the Raman spectrum of a monolayered, a bilayered, and a multi-layered graphene film formed on a transparent polymer sheet …
FIG. 4 is a graphical presentation of the optical transmittance of a monolayered, a bilayered, and a multi-layered graphene film formed on a transparent polymer …
FIG. 5 is a graphical presentation of the I (current)-V (voltage) relationship graphs of a monolayered, a bilayered, and a multi-layered graphene film formed on …
FIG. 6 is a graphical presentation of the resistance-mechanical stretching relationship 15 graphs of a monolayered, a bilayered, and a multi-layered graphene …
FIG. 7 is a graphical presentation of the resistance- mechanical bending strain relationship graphs of a monolayered, a bilayered, and a multi-layered graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring a graphene layer on a fi rst substrate onto a second target substrate, comprising: contacting a graphene layer on the fi rst substrate, which comprises one or more layers of graphene formed on a copper fi lm that is formed on a surface of a metal foil, with a contacting surface of the second target substrate under substantially uniform pressure and heat, thereby transferring the at least one graphene layer from the fi rst substrate onto the contacting surface of the second target substrate; wherein the thickness of the copper fi lm that is formed on the surface of the metal foil of the fi rst substrate is about 200-800 nm; and wherein the transferring consists essentially of applying substantially uniform pressure and heat. Currently amended
The method of claim 1, wherein the thickness of the copper fi lm that is formed on the surface of the metal foil of the fi rst substrate is about 400-500 nm. Currently amended
The method of claim 1, wherein the metal foil of the fi rst substrate is an alloy comprising Cu and at least one metal selected from the group consisting of silicon, Ni, Co, Fe, Pt, Au, Al, Cr, Ge, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, and Zr [[,]]. Currently amended
The method of claim 1, wherein the metal foil is a copper foil. Previously presented
The method of claim 1, further comprising growing the one or more graphene layers on the metal foil by contacting the foil with a reaction gas comprising carbon and with heat, thereby growing the one or more graphene layers on the foil. Previously presented
The method of claim 1, wherein the second target substrate comprises at least one selected from the group consisting of a polymer, a polymer mixture, a plastic, a rubber, a glass, a metal, Si, and S iO 2. Previously presented
The method of claim 1, wherein the substantially uniform pressure is at least 5 psi. Original
The method of claim 1, wherein the contacting of the graphene layer on the fi rst substrate to the contacting surface of the second target substrate occurs at a temperature of at least 1 80 0 C. Currently amended
The method of claim 1, wherein the transferring consists essentially of applying substantially uniform pressure of at least 2 psi and heat of at least 150 0 C and substantially uniform pressure and temperature vary by no more than 10% over the contacting surface of the second target substrate. Previously presented
(Pre v iousl y Presented): The method of claim 1, wherein the transferring consists essentially of applying substantially uniform pressure of at least 10 psi and heat of at least 300 0 C and substantially uniform pressure and temperature va rn by no more than 1% over the contacting surface of the second target substrate. Previously presented
A method of transferring a graphene layer on a fi rst substrate onto a flexible second target substrate, comprising: contacting a graphene layer on the fi rst substrate, which comprises one or more layers of graphene formed on a copper fi lm that is formed on a surface of a metal foil, with a contacting surface of the flexible second target substrate under substantially uniform pressure and heat, thereby transferring the at least one graphene layer from the fi rst substrate onto the contacting surface of the fl exible second target substrate, and subjecting the fl exible second target substrate to which the at least one graphene layer has been transferred to at least one blank page printing operation conducted by a printing device which comprises at least one fuser unit that comprises at least one heat roller and at least one pressure roller; wherein during the at least one blank page printing operation the at least one fuser unit applies substantially uniform pressure and heat on the fl exible second target substrate to which the at least one graphene layer has been transferred via the at least one pressure roller and via the at least one heat roller; wherein the thickness of the copper fi lm coating the surface of the metal foil of the fi rst substrate is about 200-800 nm; and wherein the transferring consists essentially of applying substantially uniform pressure and heat. Currently amended
The method of claim 9, wherein the metal foil is etched to remove its surface prior to formation of the copper fi lm on it. Previously presented
The method of claim 9, wherein the flexible second target substrate comprises at least one selected from the group consisting of polyethylene terephthalate, polyimide, cellulose acetate, glass, polyethylene naphthalate, polycarbonate, plastic, and rubber. Previously presented
The method of claim 9, wherein only one layer of graphene on the fi rst substrate is transferred to the contacting surface of the flexible second substrate where it forms a monolayered graphene fi lm. Previously presented
The method of claim 9, wherein the graphene film on the contacting surface of the fl exible second target substrate has a resistance of no greater than 250 Q/cm 2 by a four probe Van der Pauw method. Previously presented
The method of claim 9, further comprising stretching the graphene fi lm on the contacting surface of the flexible second target substrate to form an elongated graphene fi lm, wherein the elongated graphene fi lm has a dimension that is longer, but no greater than about 20 % longer than the graphene fi lm before the stretching, and wherein the elongated graphene fi lm has a resistance that is the same as, or different from, the resistance of the graphene fi lm before the stretching, but no more than about 10 % different from the resistance of the graphene fi lm before the stretching. Previously presented
The method of claim 9, further comprising stretching the graphene fi lm on the contacting surface of the flexible second target substrate to form an elongated graphene fi lm, wherein the elongated graphene fi lm has a dimension that is longer, but no greater than 20 % longer than the graphene fi lm before the stretching, and then relaxing the elongated graphene fi lm from the stretching to form a relaxed graphene fi lm, wherein the relaxed graphene fi lm has a resistance that is the same as, or different from, the resistance of the graphene fi lm before the stretching, but no more than about 10% different from the resistance of the graphene fi lm before the stretching. Previously presented
The method of claim 9, further comprising subjecting the graphene fi lm on the contacting surface of the flexible second target substrate to a bending strain of no greater than about 3 0% to form a bent graphene fi lm, wherein the bent graphene fi lm has a resistance that is the same as, or different from, the resistance of the graphene fi lm before being subjected to the bending strain, but no more than about 10% different from the resistance of the graphene fi lm before being subjected to the bending strain. Previously presented
The method of claim 9, further comprising subjecting the graphene fi lm on the contacting surface of the fl exible second target substrate to a bending strain of no greater than about 3 0% to form a bent graphene fi lm, and then relaxing the bent graphene fi lm from the bending strain to form a relaxed graphene fi lm, wherein the relaxed graphene f ilm has a resistance that is the same as, or different from, the resistance of the graphene film before being subjected to the bending strain, but no more than about 10 % different from the resistance of the graphene film before being subjected to the bending strain. Previously presented
Materials described outside the worked examples.
graphene
C
copper film
Cu
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graphical presentation of the Raman spectrum of a monolayered, a bilayered, and a multi-layered graphene film formed on a transparent polymer sheet …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical transmittance of monolayered graphene film | ≥ 88 % | C |
sheet resistance by four probe Van der Pauw method | ≤ 250 Ω/cm² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,962,914Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B are illustrations of one embodiment of subjecting a graphene 20 film (GF) on the contacting surface of a sheet of a flexible target substrate (FTS) to a …
FIG. 2 is an illustration of another embodiment of subjecting a graphene film (GF) on the contacting surface of a sheet of a flexible target substrate (FTS) to a …
FIG. 3 is a graphical presentation of the Raman spectrum of a monolayered, a bilayered, and a multi-layered graphene film formed on a transparent polymer sheet …
FIG. 4 is a graphical presentation of the optical transmittance of a monolayered, a bilayered, and a multi-layered graphene film formed on a transparent polymer …
FIG. 5 is a graphical presentation of the I (current)-V (voltage) relationship graphs of a monolayered, a bilayered, and a multi-layered graphene film formed on …
FIG. 6 is a graphical presentation of the resistance-mechanical stretching relationship 15 graphs of a monolayered, a bilayered, and a multi-layered graphene …
FIG. 7 is a graphical presentation of the resistance- mechanical bending strain relationship graphs of a monolayered, a bilayered, and a multi-layered graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring a graphene layer on a fi rst substrate onto a second target substrate, comprising: contacting a graphene layer on the fi rst substrate, which comprises one or more layers of graphene formed on a copper fi lm that is formed on a surface of a metal foil, with a contacting surface of the second target substrate under substantially uniform pressure and heat, thereby transferring the at least one graphene layer from the fi rst substrate onto the contacting surface of the second target substrate; wherein the thickness of the copper fi lm that is formed on the surface of the metal foil of the fi rst substrate is about 200-800 nm; and wherein the transferring consists essentially of applying substantially uniform pressure and heat. Currently amended
The method of claim 1, wherein the thickness of the copper fi lm that is formed on the surface of the metal foil of the fi rst substrate is about 400-500 nm. Currently amended
The method of claim 1, wherein the metal foil of the fi rst substrate is an alloy comprising Cu and at least one metal selected from the group consisting of silicon, Ni, Co, Fe, Pt, Au, Al, Cr, Ge, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, and Zr [[,]]. Currently amended
The method of claim 1, wherein the metal foil is a copper foil. Previously presented
The method of claim 1, further comprising growing the one or more graphene layers on the metal foil by contacting the foil with a reaction gas comprising carbon and with heat, thereby growing the one or more graphene layers on the foil. Previously presented
The method of claim 1, wherein the second target substrate comprises at least one selected from the group consisting of a polymer, a polymer mixture, a plastic, a rubber, a glass, a metal, Si, and S iO 2. Previously presented
The method of claim 1, wherein the substantially uniform pressure is at least 5 psi. Original
The method of claim 1, wherein the contacting of the graphene layer on the fi rst substrate to the contacting surface of the second target substrate occurs at a temperature of at least 1 80 0 C. Currently amended
The method of claim 1, wherein the transferring consists essentially of applying substantially uniform pressure of at least 2 psi and heat of at least 150 0 C and substantially uniform pressure and temperature vary by no more than 10% over the contacting surface of the second target substrate. Previously presented
(Pre v iousl y Presented): The method of claim 1, wherein the transferring consists essentially of applying substantially uniform pressure of at least 10 psi and heat of at least 300 0 C and substantially uniform pressure and temperature va rn by no more than 1% over the contacting surface of the second target substrate. Previously presented
A method of transferring a graphene layer on a fi rst substrate onto a flexible second target substrate, comprising: contacting a graphene layer on the fi rst substrate, which comprises one or more layers of graphene formed on a copper fi lm that is formed on a surface of a metal foil, with a contacting surface of the flexible second target substrate under substantially uniform pressure and heat, thereby transferring the at least one graphene layer from the fi rst substrate onto the contacting surface of the fl exible second target substrate, and subjecting the fl exible second target substrate to which the at least one graphene layer has been transferred to at least one blank page printing operation conducted by a printing device which comprises at least one fuser unit that comprises at least one heat roller and at least one pressure roller; wherein during the at least one blank page printing operation the at least one fuser unit applies substantially uniform pressure and heat on the fl exible second target substrate to which the at least one graphene layer has been transferred via the at least one pressure roller and via the at least one heat roller; wherein the thickness of the copper fi lm coating the surface of the metal foil of the fi rst substrate is about 200-800 nm; and wherein the transferring consists essentially of applying substantially uniform pressure and heat. Currently amended
The method of claim 9, wherein the metal foil is etched to remove its surface prior to formation of the copper fi lm on it. Previously presented
The method of claim 9, wherein the flexible second target substrate comprises at least one selected from the group consisting of polyethylene terephthalate, polyimide, cellulose acetate, glass, polyethylene naphthalate, polycarbonate, plastic, and rubber. Previously presented
The method of claim 9, wherein only one layer of graphene on the fi rst substrate is transferred to the contacting surface of the flexible second substrate where it forms a monolayered graphene fi lm. Previously presented
The method of claim 9, wherein the graphene film on the contacting surface of the fl exible second target substrate has a resistance of no greater than 250 Q/cm 2 by a four probe Van der Pauw method. Previously presented
The method of claim 9, further comprising stretching the graphene fi lm on the contacting surface of the flexible second target substrate to form an elongated graphene fi lm, wherein the elongated graphene fi lm has a dimension that is longer, but no greater than about 20 % longer than the graphene fi lm before the stretching, and wherein the elongated graphene fi lm has a resistance that is the same as, or different from, the resistance of the graphene fi lm before the stretching, but no more than about 10 % different from the resistance of the graphene fi lm before the stretching. Previously presented
The method of claim 9, further comprising stretching the graphene fi lm on the contacting surface of the flexible second target substrate to form an elongated graphene fi lm, wherein the elongated graphene fi lm has a dimension that is longer, but no greater than 20 % longer than the graphene fi lm before the stretching, and then relaxing the elongated graphene fi lm from the stretching to form a relaxed graphene fi lm, wherein the relaxed graphene fi lm has a resistance that is the same as, or different from, the resistance of the graphene fi lm before the stretching, but no more than about 10% different from the resistance of the graphene fi lm before the stretching. Previously presented
The method of claim 9, further comprising subjecting the graphene fi lm on the contacting surface of the flexible second target substrate to a bending strain of no greater than about 3 0% to form a bent graphene fi lm, wherein the bent graphene fi lm has a resistance that is the same as, or different from, the resistance of the graphene fi lm before being subjected to the bending strain, but no more than about 10% different from the resistance of the graphene fi lm before being subjected to the bending strain. Previously presented
The method of claim 9, further comprising subjecting the graphene fi lm on the contacting surface of the fl exible second target substrate to a bending strain of no greater than about 3 0% to form a bent graphene fi lm, and then relaxing the bent graphene fi lm from the bending strain to form a relaxed graphene fi lm, wherein the relaxed graphene f ilm has a resistance that is the same as, or different from, the resistance of the graphene film before being subjected to the bending strain, but no more than about 10 % different from the resistance of the graphene film before being subjected to the bending strain. Previously presented
Materials described outside the worked examples.
graphene
C
copper film
Cu
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graphical presentation of the Raman spectrum of a monolayered, a bilayered, and a multi-layered graphene film formed on a transparent polymer sheet …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical transmittance of monolayered graphene film | ≥ 88 % | C |
sheet resistance by four probe Van der Pauw method | ≤ 250 Ω/cm² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,962,914Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B are illustrations of one embodiment of subjecting a graphene 20 film (GF) on the contacting surface of a sheet of a flexible target substrate (FTS) to a …
FIG. 2 is an illustration of another embodiment of subjecting a graphene film (GF) on the contacting surface of a sheet of a flexible target substrate (FTS) to a …
FIG. 3 is a graphical presentation of the Raman spectrum of a monolayered, a bilayered, and a multi-layered graphene film formed on a transparent polymer sheet …
FIG. 4 is a graphical presentation of the optical transmittance of a monolayered, a bilayered, and a multi-layered graphene film formed on a transparent polymer …
FIG. 5 is a graphical presentation of the I (current)-V (voltage) relationship graphs of a monolayered, a bilayered, and a multi-layered graphene film formed on …
FIG. 6 is a graphical presentation of the resistance-mechanical stretching relationship 15 graphs of a monolayered, a bilayered, and a multi-layered graphene …
FIG. 7 is a graphical presentation of the resistance- mechanical bending strain relationship graphs of a monolayered, a bilayered, and a multi-layered graphene …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for transferring a graphene layer on a fi rst substrate onto a second target substrate, comprising: contacting a graphene layer on the fi rst substrate, which comprises one or more layers of graphene formed on a copper fi lm that is formed on a surface of a metal foil, with a contacting surface of the second target substrate under substantially uniform pressure and heat, thereby transferring the at least one graphene layer from the fi rst substrate onto the contacting surface of the second target substrate; wherein the thickness of the copper fi lm that is formed on the surface of the metal foil of the fi rst substrate is about 200-800 nm; and wherein the transferring consists essentially of applying substantially uniform pressure and heat. Currently amended
The method of claim 1, wherein the thickness of the copper fi lm that is formed on the surface of the metal foil of the fi rst substrate is about 400-500 nm. Currently amended
The method of claim 1, wherein the metal foil of the fi rst substrate is an alloy comprising Cu and at least one metal selected from the group consisting of silicon, Ni, Co, Fe, Pt, Au, Al, Cr, Ge, Mg, Mn, Mo, Rh, Si, Ta, Ti, W, U, V, and Zr [[,]]. Currently amended
The method of claim 1, wherein the metal foil is a copper foil. Previously presented
The method of claim 1, further comprising growing the one or more graphene layers on the metal foil by contacting the foil with a reaction gas comprising carbon and with heat, thereby growing the one or more graphene layers on the foil. Previously presented
The method of claim 1, wherein the second target substrate comprises at least one selected from the group consisting of a polymer, a polymer mixture, a plastic, a rubber, a glass, a metal, Si, and S iO 2. Previously presented
The method of claim 1, wherein the substantially uniform pressure is at least 5 psi. Original
The method of claim 1, wherein the contacting of the graphene layer on the fi rst substrate to the contacting surface of the second target substrate occurs at a temperature of at least 1 80 0 C. Currently amended
The method of claim 1, wherein the transferring consists essentially of applying substantially uniform pressure of at least 2 psi and heat of at least 150 0 C and substantially uniform pressure and temperature vary by no more than 10% over the contacting surface of the second target substrate. Previously presented
(Pre v iousl y Presented): The method of claim 1, wherein the transferring consists essentially of applying substantially uniform pressure of at least 10 psi and heat of at least 300 0 C and substantially uniform pressure and temperature va rn by no more than 1% over the contacting surface of the second target substrate. Previously presented
A method of transferring a graphene layer on a fi rst substrate onto a flexible second target substrate, comprising: contacting a graphene layer on the fi rst substrate, which comprises one or more layers of graphene formed on a copper fi lm that is formed on a surface of a metal foil, with a contacting surface of the flexible second target substrate under substantially uniform pressure and heat, thereby transferring the at least one graphene layer from the fi rst substrate onto the contacting surface of the fl exible second target substrate, and subjecting the fl exible second target substrate to which the at least one graphene layer has been transferred to at least one blank page printing operation conducted by a printing device which comprises at least one fuser unit that comprises at least one heat roller and at least one pressure roller; wherein during the at least one blank page printing operation the at least one fuser unit applies substantially uniform pressure and heat on the fl exible second target substrate to which the at least one graphene layer has been transferred via the at least one pressure roller and via the at least one heat roller; wherein the thickness of the copper fi lm coating the surface of the metal foil of the fi rst substrate is about 200-800 nm; and wherein the transferring consists essentially of applying substantially uniform pressure and heat. Currently amended
The method of claim 9, wherein the metal foil is etched to remove its surface prior to formation of the copper fi lm on it. Previously presented
The method of claim 9, wherein the flexible second target substrate comprises at least one selected from the group consisting of polyethylene terephthalate, polyimide, cellulose acetate, glass, polyethylene naphthalate, polycarbonate, plastic, and rubber. Previously presented
The method of claim 9, wherein only one layer of graphene on the fi rst substrate is transferred to the contacting surface of the flexible second substrate where it forms a monolayered graphene fi lm. Previously presented
The method of claim 9, wherein the graphene film on the contacting surface of the fl exible second target substrate has a resistance of no greater than 250 Q/cm 2 by a four probe Van der Pauw method. Previously presented
The method of claim 9, further comprising stretching the graphene fi lm on the contacting surface of the flexible second target substrate to form an elongated graphene fi lm, wherein the elongated graphene fi lm has a dimension that is longer, but no greater than about 20 % longer than the graphene fi lm before the stretching, and wherein the elongated graphene fi lm has a resistance that is the same as, or different from, the resistance of the graphene fi lm before the stretching, but no more than about 10 % different from the resistance of the graphene fi lm before the stretching. Previously presented
The method of claim 9, further comprising stretching the graphene fi lm on the contacting surface of the flexible second target substrate to form an elongated graphene fi lm, wherein the elongated graphene fi lm has a dimension that is longer, but no greater than 20 % longer than the graphene fi lm before the stretching, and then relaxing the elongated graphene fi lm from the stretching to form a relaxed graphene fi lm, wherein the relaxed graphene fi lm has a resistance that is the same as, or different from, the resistance of the graphene fi lm before the stretching, but no more than about 10% different from the resistance of the graphene fi lm before the stretching. Previously presented
The method of claim 9, further comprising subjecting the graphene fi lm on the contacting surface of the flexible second target substrate to a bending strain of no greater than about 3 0% to form a bent graphene fi lm, wherein the bent graphene fi lm has a resistance that is the same as, or different from, the resistance of the graphene fi lm before being subjected to the bending strain, but no more than about 10% different from the resistance of the graphene fi lm before being subjected to the bending strain. Previously presented
The method of claim 9, further comprising subjecting the graphene fi lm on the contacting surface of the fl exible second target substrate to a bending strain of no greater than about 3 0% to form a bent graphene fi lm, and then relaxing the bent graphene fi lm from the bending strain to form a relaxed graphene fi lm, wherein the relaxed graphene f ilm has a resistance that is the same as, or different from, the resistance of the graphene film before being subjected to the bending strain, but no more than about 10 % different from the resistance of the graphene film before being subjected to the bending strain. Previously presented
Materials described outside the worked examples.
graphene
C
copper film
Cu
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a graphical presentation of the Raman spectrum of a monolayered, a bilayered, and a multi-layered graphene film formed on a transparent polymer sheet …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical transmittance of monolayered graphene film | ≥ 88 % | C |
sheet resistance by four probe Van der Pauw method | ≤ 250 Ω/cm² |
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Thickness | 300–2000 nm | — |
Thickness | 200–800 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 300–600 nm | — |
Thickness | 400–500 nm | — |
Thickness | 0.3–15 nm | — |
Thickness | 0.3–12 nm | — |
Thickness | 0.3–9 nm | — |
Thickness | 0.3–6 nm | — |
Thickness | 0.3–3 nm | — |
Thickness | 1–1.5 nm | — |
Thickness | 500–1800 nm | — |
Thickness | 700–1500 nm | — |
Thickness | 900–1300 nm | — |
Thickness | 1000–1200 nm | — |
Thickness | 1347 -49 cm | — |
Pressure | ≥ 5 psi | — |
Pressure | ≥ 2 psi | — |
Pressure | ≥ 8 psi | — |
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metal foil substrate
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Thickness | 300–2000 nm | — |
Thickness | 200–800 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 300–600 nm | — |
Thickness | 400–500 nm | — |
Thickness | 0.3–15 nm | — |
Thickness | 0.3–12 nm | — |
Thickness | 0.3–9 nm | — |
Thickness | 0.3–6 nm | — |
Thickness | 0.3–3 nm | — |
Thickness | 1–1.5 nm | — |
Thickness | 500–1800 nm | — |
Thickness | 700–1500 nm | — |
Thickness | 900–1300 nm | — |
Thickness | 1000–1200 nm | — |
Thickness | 1347 -49 cm | — |
Pressure | ≥ 5 psi | — |
Pressure | ≥ 2 psi | — |
Pressure | ≥ 8 psi | — |
Pressure | ≥ 10 psi | — |
metal foil substrate
second target substrate
flexible second target substrate
Thickness | 300–2000 nm | — |
Thickness | 200–800 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 300–600 nm | — |
Thickness | 400–500 nm | — |
Thickness | 0.3–15 nm | — |
Thickness | 0.3–12 nm | — |
Thickness | 0.3–9 nm | — |
Thickness | 0.3–6 nm | — |
Thickness | 0.3–3 nm | — |
Thickness | 1–1.5 nm | — |
Thickness | 500–1800 nm | — |
Thickness | 700–1500 nm | — |
Thickness | 900–1300 nm | — |
Thickness | 1000–1200 nm | — |
Thickness | 1347 -49 cm | — |
Pressure | ≥ 5 psi | — |
Pressure | ≥ 2 psi | — |
Pressure | ≥ 8 psi | — |
Pressure | ≥ 10 psi | — |
metal foil substrate
second target substrate
flexible second target substrate
Thickness | 300–2000 nm | — |
Thickness | 200–800 nm | — |
Thickness | 100–1000 nm | — |
Thickness | 300–600 nm | — |
Thickness | 400–500 nm | — |
Thickness | 0.3–15 nm | — |
Thickness | 0.3–12 nm | — |
Thickness | 0.3–9 nm | — |
Thickness | 0.3–6 nm | — |
Thickness | 0.3–3 nm | — |
Thickness | 1–1.5 nm | — |
Thickness | 500–1800 nm | — |
Thickness | 700–1500 nm | — |
Thickness | 900–1300 nm | — |
Thickness | 1000–1200 nm | — |
Thickness | 1347 -49 cm | — |
Pressure | ≥ 5 psi | — |
Pressure | ≥ 2 psi | — |
Pressure | ≥ 8 psi | — |
Pressure | ≥ 10 psi | — |