Patent
US 9,087,692METHOD FOR TRANSFERRING A GRAPHENE LAYER
Corrado Accardi
US
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Patent
Atlas literature
Patent
US 9,087,692Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 2A-2F schematically show different steps of a method for transferring graphene on a substrate using a liquid resist, according to the prior art;
Figure 3A-3G schematically show different steps of a first embodiment of a method for transferring graphene on a substrate, according to the present disclosure; and 8
Figures 4A-4G schematically show different steps of a second embodiment of a method for transferring graphene on a substrate, according to the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: providing a metal layer; growing a graphene layer on said metal layer; laminating a dry film photo-resist on said graphene layer; laminating a tape on said dry film photo-resist; obtaining an initial structure, including said tape, said dry film photo-resist, and said graphene layer, by chemically etching away said metal layer; laminating said initial structure on a final substrate; obtaining an intermediate structure, including said dry film photo-resist, said graphene layer, and said final substrate, by thermally releasing said tape from the graphene layer; and obtaining a final structure, wherein obtaining the final structure includes removing said dry film photo-resist, where in the dry film photo-resis t i s a L-sens iti ve dry film photo-resist.
A method according to claim 1, wherein removing the dry film photo-resist comprises chemically etching said dry film photo-resist.
A method according to claim 1, wherein obtaining the final structure includes: patterning said dry film photo-resist by exposing said dry film photo-resist film to ultraviolet light through a mask; and 2 Application No. 13/762,8 19 Reply to Office Action dated patterning said graphene layer by chemically etching said graphene layer through the patterned dry film photo-resist.
A method according to claim 1, wherein laminating the dry film photo-resist on said graphene layer comprises laminating a dry film negative photo- resist with a thickness in a range of 1 0-100p m on said graphene layer.
A method according to claim 1, wherein said metal layer is a nickel layer or a copper layer.
A method according to claim 1, wherein providing said metal layer includes forming the metal layer on a donor substrate that includes at least one of a semiconductor or insulator crystal substrate, a semiconductor device substrate, an epitaxial layer, a flexible substrate, a metal film, and an organic device substrate.
A method according to claim 1, wherein laminating the tape on said dry film photo-resist comprises laminating a thermal releasing tape on
A method according to claim 1, wherein a release temperature in the range of 90 ° C and between 2 bar and 5 bar.
3 canceled said dry film photo- resist. laminating the tape uses a thermal release tape having 200 ° C and a lamination pressure ranging
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor (FET) with graphene channel
Materials described outside the worked examples.
graphene
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 90–200 °C | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,087,692Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 2A-2F schematically show different steps of a method for transferring graphene on a substrate using a liquid resist, according to the prior art;
Figure 3A-3G schematically show different steps of a first embodiment of a method for transferring graphene on a substrate, according to the present disclosure; and 8
Figures 4A-4G schematically show different steps of a second embodiment of a method for transferring graphene on a substrate, according to the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: providing a metal layer; growing a graphene layer on said metal layer; laminating a dry film photo-resist on said graphene layer; laminating a tape on said dry film photo-resist; obtaining an initial structure, including said tape, said dry film photo-resist, and said graphene layer, by chemically etching away said metal layer; laminating said initial structure on a final substrate; obtaining an intermediate structure, including said dry film photo-resist, said graphene layer, and said final substrate, by thermally releasing said tape from the graphene layer; and obtaining a final structure, wherein obtaining the final structure includes removing said dry film photo-resist, where in the dry film photo-resis t i s a L-sens iti ve dry film photo-resist.
A method according to claim 1, wherein removing the dry film photo-resist comprises chemically etching said dry film photo-resist.
A method according to claim 1, wherein obtaining the final structure includes: patterning said dry film photo-resist by exposing said dry film photo-resist film to ultraviolet light through a mask; and 2 Application No. 13/762,8 19 Reply to Office Action dated patterning said graphene layer by chemically etching said graphene layer through the patterned dry film photo-resist.
A method according to claim 1, wherein laminating the dry film photo-resist on said graphene layer comprises laminating a dry film negative photo- resist with a thickness in a range of 1 0-100p m on said graphene layer.
A method according to claim 1, wherein said metal layer is a nickel layer or a copper layer.
A method according to claim 1, wherein providing said metal layer includes forming the metal layer on a donor substrate that includes at least one of a semiconductor or insulator crystal substrate, a semiconductor device substrate, an epitaxial layer, a flexible substrate, a metal film, and an organic device substrate.
A method according to claim 1, wherein laminating the tape on said dry film photo-resist comprises laminating a thermal releasing tape on
A method according to claim 1, wherein a release temperature in the range of 90 ° C and between 2 bar and 5 bar.
3 canceled said dry film photo- resist. laminating the tape uses a thermal release tape having 200 ° C and a lamination pressure ranging
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor (FET) with graphene channel
Materials described outside the worked examples.
graphene
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 90–200 °C | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,087,692Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 2A-2F schematically show different steps of a method for transferring graphene on a substrate using a liquid resist, according to the prior art;
Figure 3A-3G schematically show different steps of a first embodiment of a method for transferring graphene on a substrate, according to the present disclosure; and 8
Figures 4A-4G schematically show different steps of a second embodiment of a method for transferring graphene on a substrate, according to the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: providing a metal layer; growing a graphene layer on said metal layer; laminating a dry film photo-resist on said graphene layer; laminating a tape on said dry film photo-resist; obtaining an initial structure, including said tape, said dry film photo-resist, and said graphene layer, by chemically etching away said metal layer; laminating said initial structure on a final substrate; obtaining an intermediate structure, including said dry film photo-resist, said graphene layer, and said final substrate, by thermally releasing said tape from the graphene layer; and obtaining a final structure, wherein obtaining the final structure includes removing said dry film photo-resist, where in the dry film photo-resis t i s a L-sens iti ve dry film photo-resist.
A method according to claim 1, wherein removing the dry film photo-resist comprises chemically etching said dry film photo-resist.
A method according to claim 1, wherein obtaining the final structure includes: patterning said dry film photo-resist by exposing said dry film photo-resist film to ultraviolet light through a mask; and 2 Application No. 13/762,8 19 Reply to Office Action dated patterning said graphene layer by chemically etching said graphene layer through the patterned dry film photo-resist.
A method according to claim 1, wherein laminating the dry film photo-resist on said graphene layer comprises laminating a dry film negative photo- resist with a thickness in a range of 1 0-100p m on said graphene layer.
A method according to claim 1, wherein said metal layer is a nickel layer or a copper layer.
A method according to claim 1, wherein providing said metal layer includes forming the metal layer on a donor substrate that includes at least one of a semiconductor or insulator crystal substrate, a semiconductor device substrate, an epitaxial layer, a flexible substrate, a metal film, and an organic device substrate.
A method according to claim 1, wherein laminating the tape on said dry film photo-resist comprises laminating a thermal releasing tape on
A method according to claim 1, wherein a release temperature in the range of 90 ° C and between 2 bar and 5 bar.
3 canceled said dry film photo- resist. laminating the tape uses a thermal release tape having 200 ° C and a lamination pressure ranging
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor (FET) with graphene channel
Materials described outside the worked examples.
graphene
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 90–200 °C | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,087,692Patent drawings and their descriptions. Click a drawing to enlarge it.
Figures 2A-2F schematically show different steps of a method for transferring graphene on a substrate using a liquid resist, according to the prior art;
Figure 3A-3G schematically show different steps of a first embodiment of a method for transferring graphene on a substrate, according to the present disclosure; and 8
Figures 4A-4G schematically show different steps of a second embodiment of a method for transferring graphene on a substrate, according to the present disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method, comprising: providing a metal layer; growing a graphene layer on said metal layer; laminating a dry film photo-resist on said graphene layer; laminating a tape on said dry film photo-resist; obtaining an initial structure, including said tape, said dry film photo-resist, and said graphene layer, by chemically etching away said metal layer; laminating said initial structure on a final substrate; obtaining an intermediate structure, including said dry film photo-resist, said graphene layer, and said final substrate, by thermally releasing said tape from the graphene layer; and obtaining a final structure, wherein obtaining the final structure includes removing said dry film photo-resist, where in the dry film photo-resis t i s a L-sens iti ve dry film photo-resist.
A method according to claim 1, wherein removing the dry film photo-resist comprises chemically etching said dry film photo-resist.
A method according to claim 1, wherein obtaining the final structure includes: patterning said dry film photo-resist by exposing said dry film photo-resist film to ultraviolet light through a mask; and 2 Application No. 13/762,8 19 Reply to Office Action dated patterning said graphene layer by chemically etching said graphene layer through the patterned dry film photo-resist.
A method according to claim 1, wherein laminating the dry film photo-resist on said graphene layer comprises laminating a dry film negative photo- resist with a thickness in a range of 1 0-100p m on said graphene layer.
A method according to claim 1, wherein said metal layer is a nickel layer or a copper layer.
A method according to claim 1, wherein providing said metal layer includes forming the metal layer on a donor substrate that includes at least one of a semiconductor or insulator crystal substrate, a semiconductor device substrate, an epitaxial layer, a flexible substrate, a metal film, and an organic device substrate.
A method according to claim 1, wherein laminating the tape on said dry film photo-resist comprises laminating a thermal releasing tape on
A method according to claim 1, wherein a release temperature in the range of 90 ° C and between 2 bar and 5 bar.
3 canceled said dry film photo- resist. laminating the tape uses a thermal release tape having 200 ° C and a lamination pressure ranging
Layer stacks claimed or described, ordered top of device to substrate.
field-effect transistor (FET) with graphene channel
Materials described outside the worked examples.
graphene
metal layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 90–200 °C | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
dry film photo-resist
nickel
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copper
Cu
graphene monolayer
dry film negative photo-resist
| 2–5 bar |
| — |
dry film photo-resist
nickel
Ni
copper
Cu
graphene monolayer
dry film negative photo-resist
| 2–5 bar |
| — |
dry film photo-resist
nickel
Ni
copper
Cu
graphene monolayer
dry film negative photo-resist
| 2–5 bar |
| — |
dry film photo-resist
nickel
Ni
copper
Cu
graphene monolayer
dry film negative photo-resist
| 2–5 bar |
| — |