Patent
US 11,479,876Method for producing a GaN laminate substrate
Yoshihiro Kubota
US
Copyright © 2026 Matter42. All rights reserved.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
FIG. 2 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a GaN laminate substrate, comprising the steps of: transferring a C-face sapphire thin film, which is separated from a C-face sapphire substrate having an off-angle of 0.5 to 5 0 by the ion-implantation separation technique, onto a handle substrate composed of a glass, ceramic or single crystal material having a coefficient of thermal expansion at 800K which is greater than that of silicon and less than that of C-face sapphire, to construct a GaN epitaxial growth substrate; performing high-temperature nitriding treatment on the GaN epitaxial growth substrate at 800 to 1,000 ° C and/or deposition treatment of crystalline A l N on the C-face sapphire thin film of the GaN epitaxial growth substrate, for thereby covering the surface of the C-face sapphire thin film with a surface treated layer of A lN; effecting GaN epitaxial growth on the surface treated layer of the surface treated GaN epitaxial growth substrate, to construct a GaN film carrier having a front surface which is an N- polarity surface; subjecting the GaN film to ion implantation to form an ion-implanted region; attaching and bonding together the GaN film-side surface of the ion-implanted GaN film carrier and a support substrate; and separating a GaN thin film from the GaN film along the ion-implanted region and transferring the GaN thin film onto the support substrate, thereby obtaining a GaN laminate substrate having the GaN thin film on the support substrate, the GaN thin film having a front surface which is a Ga-polarity surface. Original
The method of claim 1 wherein the handle substrate is composed of a borosilicate glass, G aN sintered body, A l N sintered body or GaAs single crystal. Original
The method of claim 1 wherein in the step of transferring a C- face sapphire thin film onto a handle substrate, a thin film of silicon oxide, silicon nitride or silicon oxynitride is interposed between the handle substrate and the C-face sapphire thin film. Previously presented
The method of claim 1 wherein the G aN epitaxial growth substrate has a warpage of up to 300 pm. Previously presented
The method of claim 1 wherein the step of effecting G aN epitaxial growth is at a temperature from higher than 1,000 0 C to 1,200 0 C. Currently amended
The method of claim 1 wherein the step of effecting GaN epitaxial growth is by the MOCVD technique. Previously presented
The method of claim 1 wherein after the surface treatment of the C-face sapphire substrate, a G aN buffer layer is formed on the surface treated layer at 700 0 C or lower, and the G aN epitaxial growth is then effected on the G aN buffer layer. Previously presented
The method of claim 1 wherein after the formation of the GaN film by epitaxial growth, a silicon oxide film is formed on the GaN film to construct the GaN film carrier. Previously presented
The method of claim 1 wherein prior to the ion implantation, the surface of the GaN film carrier subject to ion implantation is smoothed to an arithmetic average roughness Ra of 0.3 nm or less. Previously presented
The method of claim 1 wherein the ion implantation to the GaN film is a treatment using hydrogen ions (H +) and/or hydrogen molecule ions (H₂) in an implantation energy of 100 to 160 keV and a dose of 1.Ox 10 17 to 3.5x 10 17 atoms/cm 2. Previously presented
The method of claim 1 wherein the support substrate is made of Si, A 1 203, SiC, A l N or SiO
Layer stacks claimed or described, ordered top of device to substrate.
GaN epitaxial growth substrate
GaN film carrier
GaN laminate substrate
Materials described outside the worked examples.
C-face sapphire thin film
Al₂O₃
handle substrate (glass, ceramic or single crystal)
GaN film
GaN
AlN surface treated layer
AlN
borosilicate glass
GaAs single crystal
GaAs
silicon oxide thin film
SiO₂
silicon nitride thin film
Si₃N₄
silicon oxynitride thin film
SiOxNy
Si support substrate
Si
SiC support substrate
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
FIG. 2 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN epitaxial growth substrate warpage (claimed max) | 300 µm | — |
GaN film carrier surface Ra prior to ion implantation (claimed max) | 0.3 nm | GaN |
GaN buffer layer thickness (claimed range) | 20–40 nm | GaN |
Temperature | 800–1000 °C | — |
Duration | 30–1800 s | — |
Thickness | 300–1000 nm | — |
Duration | 5–30 seconds | — |
Thickness | 200–1000 nm | — |
Duration | 5–24 hours | — |
Thickness | ≥ 150 mm | — |
Table 1
It is noted that the surface rou ghn ess Ra in Table 1 is an arithmetic average rou gh SVG 17266178.
p. 23
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GALLIUM NITRIDE COMPLEMENTARY TRANSISTORS
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Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
FIG. 2 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a GaN laminate substrate, comprising the steps of: transferring a C-face sapphire thin film, which is separated from a C-face sapphire substrate having an off-angle of 0.5 to 5 0 by the ion-implantation separation technique, onto a handle substrate composed of a glass, ceramic or single crystal material having a coefficient of thermal expansion at 800K which is greater than that of silicon and less than that of C-face sapphire, to construct a GaN epitaxial growth substrate; performing high-temperature nitriding treatment on the GaN epitaxial growth substrate at 800 to 1,000 ° C and/or deposition treatment of crystalline A l N on the C-face sapphire thin film of the GaN epitaxial growth substrate, for thereby covering the surface of the C-face sapphire thin film with a surface treated layer of A lN; effecting GaN epitaxial growth on the surface treated layer of the surface treated GaN epitaxial growth substrate, to construct a GaN film carrier having a front surface which is an N- polarity surface; subjecting the GaN film to ion implantation to form an ion-implanted region; attaching and bonding together the GaN film-side surface of the ion-implanted GaN film carrier and a support substrate; and separating a GaN thin film from the GaN film along the ion-implanted region and transferring the GaN thin film onto the support substrate, thereby obtaining a GaN laminate substrate having the GaN thin film on the support substrate, the GaN thin film having a front surface which is a Ga-polarity surface. Original
The method of claim 1 wherein the handle substrate is composed of a borosilicate glass, G aN sintered body, A l N sintered body or GaAs single crystal. Original
The method of claim 1 wherein in the step of transferring a C- face sapphire thin film onto a handle substrate, a thin film of silicon oxide, silicon nitride or silicon oxynitride is interposed between the handle substrate and the C-face sapphire thin film. Previously presented
The method of claim 1 wherein the G aN epitaxial growth substrate has a warpage of up to 300 pm. Previously presented
The method of claim 1 wherein the step of effecting G aN epitaxial growth is at a temperature from higher than 1,000 0 C to 1,200 0 C. Currently amended
The method of claim 1 wherein the step of effecting GaN epitaxial growth is by the MOCVD technique. Previously presented
The method of claim 1 wherein after the surface treatment of the C-face sapphire substrate, a G aN buffer layer is formed on the surface treated layer at 700 0 C or lower, and the G aN epitaxial growth is then effected on the G aN buffer layer. Previously presented
The method of claim 1 wherein after the formation of the GaN film by epitaxial growth, a silicon oxide film is formed on the GaN film to construct the GaN film carrier. Previously presented
The method of claim 1 wherein prior to the ion implantation, the surface of the GaN film carrier subject to ion implantation is smoothed to an arithmetic average roughness Ra of 0.3 nm or less. Previously presented
The method of claim 1 wherein the ion implantation to the GaN film is a treatment using hydrogen ions (H +) and/or hydrogen molecule ions (H₂) in an implantation energy of 100 to 160 keV and a dose of 1.Ox 10 17 to 3.5x 10 17 atoms/cm 2. Previously presented
The method of claim 1 wherein the support substrate is made of Si, A 1 203, SiC, A l N or SiO
Layer stacks claimed or described, ordered top of device to substrate.
GaN epitaxial growth substrate
GaN film carrier
GaN laminate substrate
Materials described outside the worked examples.
C-face sapphire thin film
Al₂O₃
handle substrate (glass, ceramic or single crystal)
GaN film
GaN
AlN surface treated layer
AlN
borosilicate glass
GaAs single crystal
GaAs
silicon oxide thin film
SiO₂
silicon nitride thin film
Si₃N₄
silicon oxynitride thin film
SiOxNy
Si support substrate
Si
SiC support substrate
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
FIG. 2 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN epitaxial growth substrate warpage (claimed max) | 300 µm | — |
GaN film carrier surface Ra prior to ion implantation (claimed max) | 0.3 nm | GaN |
GaN buffer layer thickness (claimed range) | 20–40 nm | GaN |
Temperature | 800–1000 °C | — |
Duration | 30–1800 s | — |
Thickness | 300–1000 nm | — |
Duration | 5–30 seconds | — |
Thickness | 200–1000 nm | — |
Duration | 5–24 hours | — |
Thickness | ≥ 150 mm | — |
Table 1
It is noted that the surface rou ghn ess Ra in Table 1 is an arithmetic average rou gh SVG 17266178.
p. 23
Related documents with shared materials, methods, properties, or citations.
GALLIUM NITRIDE COMPLEMENTARY TRANSISTORS
INDIUM SURFACTANT ASSISTED HVPE OF HIGH QUALITY GALLIUM NITRIDE AND GALLIUM NITRIDE ALLOY FILMS
AMMONOTHERMAL METHOD FOR GROWTH OF BULK GALLIUM NITRIDE
FABRICATION OF GAN SUBSTRATE BY DEFECT SELECTIVE PASSIVATION
PROCESS FOR MANUFACTURING A RELAXED GAN/INGAN STRUCTURE
VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE
SELF-ALIGNED SIDEWALL GATE GAN HEMT
GaN EPITAXIAL GROWTH METHOD
OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES AND GROWTH STRUCTURES FOR LASER APPLICATIONS
METHOD FOR ELECTRICAL ACTIVATION OF DOPANT SPECIES IN A GAN FILM
MULTILAYER SUBSTRATE HAVING GALLIUM NITRIDE LAYER AND METHOD FOR FORMING THE SAME
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
FIG. 2 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a GaN laminate substrate, comprising the steps of: transferring a C-face sapphire thin film, which is separated from a C-face sapphire substrate having an off-angle of 0.5 to 5 0 by the ion-implantation separation technique, onto a handle substrate composed of a glass, ceramic or single crystal material having a coefficient of thermal expansion at 800K which is greater than that of silicon and less than that of C-face sapphire, to construct a GaN epitaxial growth substrate; performing high-temperature nitriding treatment on the GaN epitaxial growth substrate at 800 to 1,000 ° C and/or deposition treatment of crystalline A l N on the C-face sapphire thin film of the GaN epitaxial growth substrate, for thereby covering the surface of the C-face sapphire thin film with a surface treated layer of A lN; effecting GaN epitaxial growth on the surface treated layer of the surface treated GaN epitaxial growth substrate, to construct a GaN film carrier having a front surface which is an N- polarity surface; subjecting the GaN film to ion implantation to form an ion-implanted region; attaching and bonding together the GaN film-side surface of the ion-implanted GaN film carrier and a support substrate; and separating a GaN thin film from the GaN film along the ion-implanted region and transferring the GaN thin film onto the support substrate, thereby obtaining a GaN laminate substrate having the GaN thin film on the support substrate, the GaN thin film having a front surface which is a Ga-polarity surface. Original
The method of claim 1 wherein the handle substrate is composed of a borosilicate glass, G aN sintered body, A l N sintered body or GaAs single crystal. Original
The method of claim 1 wherein in the step of transferring a C- face sapphire thin film onto a handle substrate, a thin film of silicon oxide, silicon nitride or silicon oxynitride is interposed between the handle substrate and the C-face sapphire thin film. Previously presented
The method of claim 1 wherein the G aN epitaxial growth substrate has a warpage of up to 300 pm. Previously presented
The method of claim 1 wherein the step of effecting G aN epitaxial growth is at a temperature from higher than 1,000 0 C to 1,200 0 C. Currently amended
The method of claim 1 wherein the step of effecting GaN epitaxial growth is by the MOCVD technique. Previously presented
The method of claim 1 wherein after the surface treatment of the C-face sapphire substrate, a G aN buffer layer is formed on the surface treated layer at 700 0 C or lower, and the G aN epitaxial growth is then effected on the G aN buffer layer. Previously presented
The method of claim 1 wherein after the formation of the GaN film by epitaxial growth, a silicon oxide film is formed on the GaN film to construct the GaN film carrier. Previously presented
The method of claim 1 wherein prior to the ion implantation, the surface of the GaN film carrier subject to ion implantation is smoothed to an arithmetic average roughness Ra of 0.3 nm or less. Previously presented
The method of claim 1 wherein the ion implantation to the GaN film is a treatment using hydrogen ions (H +) and/or hydrogen molecule ions (H₂) in an implantation energy of 100 to 160 keV and a dose of 1.Ox 10 17 to 3.5x 10 17 atoms/cm 2. Previously presented
The method of claim 1 wherein the support substrate is made of Si, A 1 203, SiC, A l N or SiO
Layer stacks claimed or described, ordered top of device to substrate.
GaN epitaxial growth substrate
GaN film carrier
GaN laminate substrate
Materials described outside the worked examples.
C-face sapphire thin film
Al₂O₃
handle substrate (glass, ceramic or single crystal)
GaN film
GaN
AlN surface treated layer
AlN
borosilicate glass
GaAs single crystal
GaAs
silicon oxide thin film
SiO₂
silicon nitride thin film
Si₃N₄
silicon oxynitride thin film
SiOxNy
Si support substrate
Si
SiC support substrate
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
FIG. 2 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN epitaxial growth substrate warpage (claimed max) | 300 µm | — |
GaN film carrier surface Ra prior to ion implantation (claimed max) | 0.3 nm | GaN |
GaN buffer layer thickness (claimed range) | 20–40 nm | GaN |
Temperature | 800–1000 °C | — |
Duration | 30–1800 s | — |
Thickness | 300–1000 nm | — |
Duration | 5–30 seconds | — |
Thickness | 200–1000 nm | — |
Duration | 5–24 hours | — |
Thickness | ≥ 150 mm | — |
Table 1
It is noted that the surface rou ghn ess Ra in Table 1 is an arithmetic average rou gh SVG 17266178.
p. 23
Related documents with shared materials, methods, properties, or citations.
GALLIUM NITRIDE COMPLEMENTARY TRANSISTORS
INDIUM SURFACTANT ASSISTED HVPE OF HIGH QUALITY GALLIUM NITRIDE AND GALLIUM NITRIDE ALLOY FILMS
AMMONOTHERMAL METHOD FOR GROWTH OF BULK GALLIUM NITRIDE
FABRICATION OF GAN SUBSTRATE BY DEFECT SELECTIVE PASSIVATION
PROCESS FOR MANUFACTURING A RELAXED GAN/INGAN STRUCTURE
VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE
SELF-ALIGNED SIDEWALL GATE GAN HEMT
GaN EPITAXIAL GROWTH METHOD
OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES AND GROWTH STRUCTURES FOR LASER APPLICATIONS
METHOD FOR ELECTRICAL ACTIVATION OF DOPANT SPECIES IN A GAN FILM
MULTILAYER SUBSTRATE HAVING GALLIUM NITRIDE LAYER AND METHOD FOR FORMING THE SAME
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
FIG. 2 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for producing a GaN laminate substrate, comprising the steps of: transferring a C-face sapphire thin film, which is separated from a C-face sapphire substrate having an off-angle of 0.5 to 5 0 by the ion-implantation separation technique, onto a handle substrate composed of a glass, ceramic or single crystal material having a coefficient of thermal expansion at 800K which is greater than that of silicon and less than that of C-face sapphire, to construct a GaN epitaxial growth substrate; performing high-temperature nitriding treatment on the GaN epitaxial growth substrate at 800 to 1,000 ° C and/or deposition treatment of crystalline A l N on the C-face sapphire thin film of the GaN epitaxial growth substrate, for thereby covering the surface of the C-face sapphire thin film with a surface treated layer of A lN; effecting GaN epitaxial growth on the surface treated layer of the surface treated GaN epitaxial growth substrate, to construct a GaN film carrier having a front surface which is an N- polarity surface; subjecting the GaN film to ion implantation to form an ion-implanted region; attaching and bonding together the GaN film-side surface of the ion-implanted GaN film carrier and a support substrate; and separating a GaN thin film from the GaN film along the ion-implanted region and transferring the GaN thin film onto the support substrate, thereby obtaining a GaN laminate substrate having the GaN thin film on the support substrate, the GaN thin film having a front surface which is a Ga-polarity surface. Original
The method of claim 1 wherein the handle substrate is composed of a borosilicate glass, G aN sintered body, A l N sintered body or GaAs single crystal. Original
The method of claim 1 wherein in the step of transferring a C- face sapphire thin film onto a handle substrate, a thin film of silicon oxide, silicon nitride or silicon oxynitride is interposed between the handle substrate and the C-face sapphire thin film. Previously presented
The method of claim 1 wherein the G aN epitaxial growth substrate has a warpage of up to 300 pm. Previously presented
The method of claim 1 wherein the step of effecting G aN epitaxial growth is at a temperature from higher than 1,000 0 C to 1,200 0 C. Currently amended
The method of claim 1 wherein the step of effecting GaN epitaxial growth is by the MOCVD technique. Previously presented
The method of claim 1 wherein after the surface treatment of the C-face sapphire substrate, a G aN buffer layer is formed on the surface treated layer at 700 0 C or lower, and the G aN epitaxial growth is then effected on the G aN buffer layer. Previously presented
The method of claim 1 wherein after the formation of the GaN film by epitaxial growth, a silicon oxide film is formed on the GaN film to construct the GaN film carrier. Previously presented
The method of claim 1 wherein prior to the ion implantation, the surface of the GaN film carrier subject to ion implantation is smoothed to an arithmetic average roughness Ra of 0.3 nm or less. Previously presented
The method of claim 1 wherein the ion implantation to the GaN film is a treatment using hydrogen ions (H +) and/or hydrogen molecule ions (H₂) in an implantation energy of 100 to 160 keV and a dose of 1.Ox 10 17 to 3.5x 10 17 atoms/cm 2. Previously presented
The method of claim 1 wherein the support substrate is made of Si, A 1 203, SiC, A l N or SiO
Layer stacks claimed or described, ordered top of device to substrate.
GaN epitaxial growth substrate
GaN film carrier
GaN laminate substrate
Materials described outside the worked examples.
C-face sapphire thin film
Al₂O₃
handle substrate (glass, ceramic or single crystal)
GaN film
GaN
AlN surface treated layer
AlN
borosilicate glass
GaAs single crystal
GaAs
silicon oxide thin film
SiO₂
silicon nitride thin film
Si₃N₄
silicon oxynitride thin film
SiOxNy
Si support substrate
Si
SiC support substrate
SiC
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
FIG. 2 illustrates, among steps of the method for producing a GaN laminate substrate according to one embodiment of the invention, those steps taken un til a …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
GaN epitaxial growth substrate warpage (claimed max) | 300 µm | — |
GaN film carrier surface Ra prior to ion implantation (claimed max) | 0.3 nm | GaN |
GaN buffer layer thickness (claimed range) | 20–40 nm | GaN |
Temperature | 800–1000 °C | — |
Duration | 30–1800 s | — |
Thickness | 300–1000 nm | — |
Duration | 5–30 seconds | — |
Thickness | 200–1000 nm | — |
Duration | 5–24 hours | — |
Thickness | ≥ 150 mm | — |
Table 1
It is noted that the surface rou ghn ess Ra in Table 1 is an arithmetic average rou gh SVG 17266178.
p. 23
Related documents with shared materials, methods, properties, or citations.
GALLIUM NITRIDE COMPLEMENTARY TRANSISTORS
INDIUM SURFACTANT ASSISTED HVPE OF HIGH QUALITY GALLIUM NITRIDE AND GALLIUM NITRIDE ALLOY FILMS
AMMONOTHERMAL METHOD FOR GROWTH OF BULK GALLIUM NITRIDE
FABRICATION OF GAN SUBSTRATE BY DEFECT SELECTIVE PASSIVATION
PROCESS FOR MANUFACTURING A RELAXED GAN/INGAN STRUCTURE
VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE
SELF-ALIGNED SIDEWALL GATE GAN HEMT
GaN EPITAXIAL GROWTH METHOD
OPTICAL DEVICE STRUCTURE USING GAN SUBSTRATES AND GROWTH STRUCTURES FOR LASER APPLICATIONS
METHOD FOR ELECTRICAL ACTIVATION OF DOPANT SPECIES IN A GAN FILM
MULTILAYER SUBSTRATE HAVING GALLIUM NITRIDE LAYER AND METHOD FOR FORMING THE SAME