A method for electrical activation of dopant species in a GaN film

Claire AGRAFFEIL

Patent

Atlas literature

Patent

US 9,337,039

A method for electrical activation of dopant species in a GaN film

Claire AGRAFFEIL

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 12 dependent

1
IndependentGaNshielding layerGaN activation structure
A method for electrical activation of dopant species in a ﬁlm of GaN wherein the method comprises the steps of: a) Providing a stack comprising a support substrate and a ﬁlm of GaN comprising dopant species, b).......gby direct bonding a shielding layer having a thickness higher than 2 micrometers to the surface of the ﬁlm of GaN, so as to form an activation structure, and c) Applying a thermal budget to said activation structure according to conditions conﬁgured to electrically activate at least one portion of said dopant species.
1. 2
  Dependent← claim 1GaN
  The method according to claim 1, wherein hstep c) of applying the thermal budget comprises applying at least one thermal treatment at a temperature higher than 1000 ° C, and even higher than 1200 ° C, for a time period ranging from several minutes to several days.
2. 3
  Dependent← claim 1GaN
  The method according to claim 1, wherein-step c) of applying the thermal budget comprises applying several thermal treatment sequences, each sequence being carried out at an identical or variable temperature and on an identical or variable time period.
3. 4
  Dependent← claim 1GaN
  The method according to claim 1, wherein the method comprises, prior to:':; step a), a step i) 44s-of carrying out an epitaxy of the ﬁlm of GaN on the support substrate.
4. 6
  Dependent← claim 1GaN
  The method according to claim 1, wherein the method comprises, prior to _b step a), a step j) consisting of implanting the dopant species in the ﬁlm of GaN.
5. 8
  Dependent← claim 1Al₂O₃Al₂O₃Al₂O₃Siglass shielding layer
  The method according to claim 1, wherein the support substrate is composed of sapphire and the shielding layer is composed of sapphire or of alumina, or in that the support substrate is composed of silicon and the shielding layer is composed of silicon or of glass.
6. 9
  Dependent← claim 1shielding layer
  The method according to claim 1, wherein the shielding layer is composed of a crystalline material.
7. 10
  Dependent← claim 1shielding layer
  The method according to claim 1, wherein the method comprises, prior to ite step b) of bonding, a step k) consisting of implanting ionic species in a source substrate so as to create an embrittlement plane delimiting either side thereof the shielding layer and a negative substrate of the source substrate.
8. 11
  Dependent← claim 1SiO₂Si₃N₄AlNAl₂O₃Si
  The method according to claim 1, wherein the method comprises, prior to k step b) of bonding, a step m) consisting of depositing a covering layer on the shielding layer, the covering layer comprising at least one material selected from SiO2, Si₃N4, A l N, A 120 3, n amorp hous Si.
9. 13
  Dependent← claim 1GaN
  The method according to claim 1, wherein the method comprises, after _-a step c) of applying the thermal budget, a step d) consisting of removing -9- Application No. 14/314,333 SVG 14314333.10-09-2015.IFK₅BVG₂PXXIFW3.CLM.1.svg 0.39 6.24 Black and white step d), a step e) consisting of manufacturing devices from the ﬁlm of doped GaN for applications in the ﬁeld of optoelectronics or power devices. -10-

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

GaN activation structure

shielding layershielding layer (>2 µm, direct bonded)

GaNGaN film with dopants

Al₂O₃support substrate

Materials

Materials described outside the worked examples.

GaN film with dopant species

GaN

Semiconductor Film To Be Doped And Activated

shielding layer

Shielding Layer Bonded To GaN Surface, Thickness > 2 Micrometers

Process steps

Additional fabrication and treatment steps described in the patent.

Thermal Annealing

Step 1

Temperature

1000, 1200°C

Process details

description:Thermal budget applied to activation structure to electrically activate dopant species; temperature higher than 1000 C and even higher than 1200 C, for a time period ranging from several minutes to several days; up to 1300-1350 C for silicon substrate, up to 1600 C for sapphire substrate

Why these are connected

Related documents with shared materials, methods, properties, or citations.

A method for electrical activation of dopant species in a GaN film | Matter42 Literature