Patent
US 10,411,108VERTICAL GALLIUM NITRIDE SCHOTTKY DIODE
Vladimir Odnoblyudov, Ozgur Aktas
Qromis Technology, Inc.·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,411,108Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Because the engineered substrate includes a core 110 (e.g., A l N) that may have a coefficient of thermal expansion (CTE) that is substantially matched …
FIG. 2 shows a simplified flowchart illustrating a method of forming a Schottky barrier diode (SBD) according to some embodiments of the present invention. [0008]
FIG. 3F. Referring to
FIG. 4 illustrates schematically a perspective view of a Schottky diode 400 that may be made using the method 200 described above, according to an embodiment …
FIG. 5 illustrates schematically a cross-sectional view of a vertical Schottky diode 500 according to some embodiments of the present invention. The vertical …
FIG. 6 illustrates schematically a cross-sectional view of a vertical junction barrier Schottky (JBS) diode according to some embodiments of the present …
FIG. 8 shows a gray-scale plot of the doping concentrations of a Schottky diode according to some embodiments of the present invention. For example, the doping …
FIG. 9 shows a gray-scale plot of the doping concentrations of a Schottky diode according to some other embodiments of the present invention. Each of the first …
FIG. 10 shows a simplified flowchart illustrating a method 1000 of forming a vertical Schottky diode according to some embodiments of the present invention. The …
FIG. 11 illustrates schematically a cross- sectional view of a vertical Schottky diode 1100 according to some embodiments of the present invention. The …
FIG. 12 is suitable for a variety of electronic and optical applications. The engineered substrate 1200 includes a core 1210 that may have a coefficient of …
FIG. 13 is suitable for a variety of electronic and optical applications. The engineered substrate 1300 includes a core 1310 that may have a coefficient of …
FIG. 14, it will be appreciated that deposition of adhesion layer material on other portions of the core 1410 will not adversely impact the performance of the …
FIG. 15 is a simplified flowchart illustrating a method 1500 of forming a vertical Schottky diode according to an embodiment of the present invention. The method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical Schottky diode comprising: an ohmic contact; a first epitaxial N-type gallium nitride layer physically contacting the ohmic contact and having a first doping concentration; a second epitaxial N-type gallium nitride layer physically contacting the first epitaxial N-type gallium nitride layer and having a second doping concentration that is lower than the first doping concentration; a first edge termination region and a second edge termination region coupled to the second epitaxial N-type gallium nitride layer and separated from each other by a portion of the second epitaxial N-type gallium nitride layer; and a Schottky contact coupled to the portion of the second epitaxial N-type gallium nitride layer, and to the first edge termination region and the second edge termination region. Withdrawn
The vertical Schottky diode of claim 1 further comprising a metal tab attached to the ohmic contact via a solder. Withdrawn
The vertical Schottky diode of claim 1 wherein the second epitaxial N-type gallium nitride layer has a thickness ranging from about 10 p m to about 25 pm. Withdrawn
The vertical Schottky diode of claim 1 wherein the second epitaxial N-type gallium nitride layer comprises an epitaxial interfacial layer at an interface with the first epitaxial N-type gallium nitride layer. Withdrawn
The vertical Schottky diode of claim 1 wherein the first doping concentration ranges from about 1 x101 8 c m3 to about 5 x101 8 c m 3. Withdrawn
The vertical Schottky diode of claim 1 wherein each of the first edge termination region and the second edge termination region comprises gallium nitride doped with magnesium (Mg). Withdrawn
The vertical Schottky diode of claim 1 further comprising a plurality of junction barrier Schottky (JBS) grid regions in the portion of the second epitaxial N- type gallium nitride layer between the first edge termination region and the second edge termination region, the plurality of JBS grid regions being coupled to the Schot t ky contact. Withdrawn
The vertical Schottky diode of claim 1 wherein each of the first edge termination region and the second edge termination region comprises a single zone having a third doping concentration ranging from about 2 x10 5 cm- 3 to about 5 x 10 16 cm- 3. Withdrawn
The vertical Schottky diode of claim 1 wherein each of the first edge termination region and the second edge termination region comprises a first zone and a second zone, the first zone having a third doping concentration ranging from about 2x 10' 5 cm⁻³ to about 5 x 10 16 cm⁻³, and the second zone having a fourth doping concentration ranging from about 5 x101 6 CM- 3 to about 5x 101 7 cm 3. Withdrawn
A method of forming a vertical Schottky diode, the method comprising: providing an engineered substrate, the engineered substrate comprising: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline silicon layer coupled to the bounding layer; forming a first epitaxial N-type gallium nitride layer coupled to the substantially single crystalline silicon layer and having a first doping concentration; forming a second epitaxial N-type gallium nitride layer coupled to the first epitaxial N-type gallium nitride layer and having a second doping concentration that is lower than the first doping concentration; forming a first edge termination region and a second edge termination region coupled to the second epitaxial N-type gallium nitride layer and separated from each other by a portion of the second epitaxial N-type gallium nitride layer; forming a Schottky contact coupled to the portion of the second epitaxial N-type gallium nitride layer and to the first edge termination region and the second edge termination region; removing the engineered substrate to expose a back surface of the first epitaxial N-type gallium nitride layer; and forming an ohmic contact coupled to the back surface of the first epitaxial N-type gallium nitride layer. Original
The method of claim 12 further comprising forming a metal tab attached to the ohmic contact via a solder. Original
The method of claim 12 wherein the second epitaxial N-type gallium nitride layer has a thickness ranging from about 10 p m to about 25 pm. Original
The method of claim 12 wherein forming the first edge termination region and the second edge termination region comprises ion implanting magnesium (Mg) a first portion and a second portion of the second epitaxial N-type gallium nitride layer. Original
The method of claim 12 further comprising: forming a plurality of junction barrier Schottky (JBS) grid regions in the portion of the second epitaxial N-type gallium nitride layer between the first edge termination region and the second edge termination region, wherein the plurality of JB S grid regions are coupled to the Schottky contact. Withdrawn
A vertical Schottky diode comprising: a metal tab; an ohmic contact coupled to the metal tab; a first epitaxial N-type gallium nitride layer electrically contacting the ohmic contact and having a first doping concentration; a second epitaxial N-type gallium nitride layer physically contacting the first epitaxial N-type gallium nitride layer and having a second doping concentration that is lower than the first doping concentration; and a Schottky contact coupled to a portion of the second epitaxial N-type gallium nitride layer, the Schottky contact having a step-wise structure such that a cross-section of the Schottky contact is narrower in a region proximal to the second epitaxial N-type gallium nitride layer and wider in a second region distal to the second epitaxial N-type gallium nitride layer. Withdrawn
The vertical Schottky diode of claim 18 wherein the second epitaxial N-type gallium nitride layer has a thickness ranging from about 10 p m to about 25 pm. Withdrawn
The vertical Schottky diode of claim 18 wherein the first doping concentration ranges from about 1 x10 1 8 to about 5 x 10 18. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
vertical Schottky diode
vertical junction barrier Schottky (JBS) diode
Materials described outside the worked examples.
first epitaxial N-type gallium nitride layer
GaN
gallium nitride doped with magnesium
GaN:Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. Because the engineered substrate includes a core 110 (e.g., A l N) that may have a coefficient of thermal expansion (CTE) that is substantially matched …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 0.1 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,411,108Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Because the engineered substrate includes a core 110 (e.g., A l N) that may have a coefficient of thermal expansion (CTE) that is substantially matched …
FIG. 2 shows a simplified flowchart illustrating a method of forming a Schottky barrier diode (SBD) according to some embodiments of the present invention. [0008]
FIG. 3F. Referring to
FIG. 4 illustrates schematically a perspective view of a Schottky diode 400 that may be made using the method 200 described above, according to an embodiment …
FIG. 5 illustrates schematically a cross-sectional view of a vertical Schottky diode 500 according to some embodiments of the present invention. The vertical …
FIG. 6 illustrates schematically a cross-sectional view of a vertical junction barrier Schottky (JBS) diode according to some embodiments of the present …
FIG. 8 shows a gray-scale plot of the doping concentrations of a Schottky diode according to some embodiments of the present invention. For example, the doping …
FIG. 9 shows a gray-scale plot of the doping concentrations of a Schottky diode according to some other embodiments of the present invention. Each of the first …
FIG. 10 shows a simplified flowchart illustrating a method 1000 of forming a vertical Schottky diode according to some embodiments of the present invention. The …
FIG. 11 illustrates schematically a cross- sectional view of a vertical Schottky diode 1100 according to some embodiments of the present invention. The …
FIG. 12 is suitable for a variety of electronic and optical applications. The engineered substrate 1200 includes a core 1210 that may have a coefficient of …
FIG. 13 is suitable for a variety of electronic and optical applications. The engineered substrate 1300 includes a core 1310 that may have a coefficient of …
FIG. 14, it will be appreciated that deposition of adhesion layer material on other portions of the core 1410 will not adversely impact the performance of the …
FIG. 15 is a simplified flowchart illustrating a method 1500 of forming a vertical Schottky diode according to an embodiment of the present invention. The method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical Schottky diode comprising: an ohmic contact; a first epitaxial N-type gallium nitride layer physically contacting the ohmic contact and having a first doping concentration; a second epitaxial N-type gallium nitride layer physically contacting the first epitaxial N-type gallium nitride layer and having a second doping concentration that is lower than the first doping concentration; a first edge termination region and a second edge termination region coupled to the second epitaxial N-type gallium nitride layer and separated from each other by a portion of the second epitaxial N-type gallium nitride layer; and a Schottky contact coupled to the portion of the second epitaxial N-type gallium nitride layer, and to the first edge termination region and the second edge termination region. Withdrawn
The vertical Schottky diode of claim 1 further comprising a metal tab attached to the ohmic contact via a solder. Withdrawn
The vertical Schottky diode of claim 1 wherein the second epitaxial N-type gallium nitride layer has a thickness ranging from about 10 p m to about 25 pm. Withdrawn
The vertical Schottky diode of claim 1 wherein the second epitaxial N-type gallium nitride layer comprises an epitaxial interfacial layer at an interface with the first epitaxial N-type gallium nitride layer. Withdrawn
The vertical Schottky diode of claim 1 wherein the first doping concentration ranges from about 1 x101 8 c m3 to about 5 x101 8 c m 3. Withdrawn
The vertical Schottky diode of claim 1 wherein each of the first edge termination region and the second edge termination region comprises gallium nitride doped with magnesium (Mg). Withdrawn
The vertical Schottky diode of claim 1 further comprising a plurality of junction barrier Schottky (JBS) grid regions in the portion of the second epitaxial N- type gallium nitride layer between the first edge termination region and the second edge termination region, the plurality of JBS grid regions being coupled to the Schot t ky contact. Withdrawn
The vertical Schottky diode of claim 1 wherein each of the first edge termination region and the second edge termination region comprises a single zone having a third doping concentration ranging from about 2 x10 5 cm- 3 to about 5 x 10 16 cm- 3. Withdrawn
The vertical Schottky diode of claim 1 wherein each of the first edge termination region and the second edge termination region comprises a first zone and a second zone, the first zone having a third doping concentration ranging from about 2x 10' 5 cm⁻³ to about 5 x 10 16 cm⁻³, and the second zone having a fourth doping concentration ranging from about 5 x101 6 CM- 3 to about 5x 101 7 cm 3. Withdrawn
A method of forming a vertical Schottky diode, the method comprising: providing an engineered substrate, the engineered substrate comprising: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline silicon layer coupled to the bounding layer; forming a first epitaxial N-type gallium nitride layer coupled to the substantially single crystalline silicon layer and having a first doping concentration; forming a second epitaxial N-type gallium nitride layer coupled to the first epitaxial N-type gallium nitride layer and having a second doping concentration that is lower than the first doping concentration; forming a first edge termination region and a second edge termination region coupled to the second epitaxial N-type gallium nitride layer and separated from each other by a portion of the second epitaxial N-type gallium nitride layer; forming a Schottky contact coupled to the portion of the second epitaxial N-type gallium nitride layer and to the first edge termination region and the second edge termination region; removing the engineered substrate to expose a back surface of the first epitaxial N-type gallium nitride layer; and forming an ohmic contact coupled to the back surface of the first epitaxial N-type gallium nitride layer. Original
The method of claim 12 further comprising forming a metal tab attached to the ohmic contact via a solder. Original
The method of claim 12 wherein the second epitaxial N-type gallium nitride layer has a thickness ranging from about 10 p m to about 25 pm. Original
The method of claim 12 wherein forming the first edge termination region and the second edge termination region comprises ion implanting magnesium (Mg) a first portion and a second portion of the second epitaxial N-type gallium nitride layer. Original
The method of claim 12 further comprising: forming a plurality of junction barrier Schottky (JBS) grid regions in the portion of the second epitaxial N-type gallium nitride layer between the first edge termination region and the second edge termination region, wherein the plurality of JB S grid regions are coupled to the Schottky contact. Withdrawn
A vertical Schottky diode comprising: a metal tab; an ohmic contact coupled to the metal tab; a first epitaxial N-type gallium nitride layer electrically contacting the ohmic contact and having a first doping concentration; a second epitaxial N-type gallium nitride layer physically contacting the first epitaxial N-type gallium nitride layer and having a second doping concentration that is lower than the first doping concentration; and a Schottky contact coupled to a portion of the second epitaxial N-type gallium nitride layer, the Schottky contact having a step-wise structure such that a cross-section of the Schottky contact is narrower in a region proximal to the second epitaxial N-type gallium nitride layer and wider in a second region distal to the second epitaxial N-type gallium nitride layer. Withdrawn
The vertical Schottky diode of claim 18 wherein the second epitaxial N-type gallium nitride layer has a thickness ranging from about 10 p m to about 25 pm. Withdrawn
The vertical Schottky diode of claim 18 wherein the first doping concentration ranges from about 1 x10 1 8 to about 5 x 10 18. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
vertical Schottky diode
vertical junction barrier Schottky (JBS) diode
Materials described outside the worked examples.
first epitaxial N-type gallium nitride layer
GaN
gallium nitride doped with magnesium
GaN:Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. Because the engineered substrate includes a core 110 (e.g., A l N) that may have a coefficient of thermal expansion (CTE) that is substantially matched …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 0.1 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,411,108Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Because the engineered substrate includes a core 110 (e.g., A l N) that may have a coefficient of thermal expansion (CTE) that is substantially matched …
FIG. 2 shows a simplified flowchart illustrating a method of forming a Schottky barrier diode (SBD) according to some embodiments of the present invention. [0008]
FIG. 3F. Referring to
FIG. 4 illustrates schematically a perspective view of a Schottky diode 400 that may be made using the method 200 described above, according to an embodiment …
FIG. 5 illustrates schematically a cross-sectional view of a vertical Schottky diode 500 according to some embodiments of the present invention. The vertical …
FIG. 6 illustrates schematically a cross-sectional view of a vertical junction barrier Schottky (JBS) diode according to some embodiments of the present …
FIG. 8 shows a gray-scale plot of the doping concentrations of a Schottky diode according to some embodiments of the present invention. For example, the doping …
FIG. 9 shows a gray-scale plot of the doping concentrations of a Schottky diode according to some other embodiments of the present invention. Each of the first …
FIG. 10 shows a simplified flowchart illustrating a method 1000 of forming a vertical Schottky diode according to some embodiments of the present invention. The …
FIG. 11 illustrates schematically a cross- sectional view of a vertical Schottky diode 1100 according to some embodiments of the present invention. The …
FIG. 12 is suitable for a variety of electronic and optical applications. The engineered substrate 1200 includes a core 1210 that may have a coefficient of …
FIG. 13 is suitable for a variety of electronic and optical applications. The engineered substrate 1300 includes a core 1310 that may have a coefficient of …
FIG. 14, it will be appreciated that deposition of adhesion layer material on other portions of the core 1410 will not adversely impact the performance of the …
FIG. 15 is a simplified flowchart illustrating a method 1500 of forming a vertical Schottky diode according to an embodiment of the present invention. The method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical Schottky diode comprising: an ohmic contact; a first epitaxial N-type gallium nitride layer physically contacting the ohmic contact and having a first doping concentration; a second epitaxial N-type gallium nitride layer physically contacting the first epitaxial N-type gallium nitride layer and having a second doping concentration that is lower than the first doping concentration; a first edge termination region and a second edge termination region coupled to the second epitaxial N-type gallium nitride layer and separated from each other by a portion of the second epitaxial N-type gallium nitride layer; and a Schottky contact coupled to the portion of the second epitaxial N-type gallium nitride layer, and to the first edge termination region and the second edge termination region. Withdrawn
The vertical Schottky diode of claim 1 further comprising a metal tab attached to the ohmic contact via a solder. Withdrawn
The vertical Schottky diode of claim 1 wherein the second epitaxial N-type gallium nitride layer has a thickness ranging from about 10 p m to about 25 pm. Withdrawn
The vertical Schottky diode of claim 1 wherein the second epitaxial N-type gallium nitride layer comprises an epitaxial interfacial layer at an interface with the first epitaxial N-type gallium nitride layer. Withdrawn
The vertical Schottky diode of claim 1 wherein the first doping concentration ranges from about 1 x101 8 c m3 to about 5 x101 8 c m 3. Withdrawn
The vertical Schottky diode of claim 1 wherein each of the first edge termination region and the second edge termination region comprises gallium nitride doped with magnesium (Mg). Withdrawn
The vertical Schottky diode of claim 1 further comprising a plurality of junction barrier Schottky (JBS) grid regions in the portion of the second epitaxial N- type gallium nitride layer between the first edge termination region and the second edge termination region, the plurality of JBS grid regions being coupled to the Schot t ky contact. Withdrawn
The vertical Schottky diode of claim 1 wherein each of the first edge termination region and the second edge termination region comprises a single zone having a third doping concentration ranging from about 2 x10 5 cm- 3 to about 5 x 10 16 cm- 3. Withdrawn
The vertical Schottky diode of claim 1 wherein each of the first edge termination region and the second edge termination region comprises a first zone and a second zone, the first zone having a third doping concentration ranging from about 2x 10' 5 cm⁻³ to about 5 x 10 16 cm⁻³, and the second zone having a fourth doping concentration ranging from about 5 x101 6 CM- 3 to about 5x 101 7 cm 3. Withdrawn
A method of forming a vertical Schottky diode, the method comprising: providing an engineered substrate, the engineered substrate comprising: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline silicon layer coupled to the bounding layer; forming a first epitaxial N-type gallium nitride layer coupled to the substantially single crystalline silicon layer and having a first doping concentration; forming a second epitaxial N-type gallium nitride layer coupled to the first epitaxial N-type gallium nitride layer and having a second doping concentration that is lower than the first doping concentration; forming a first edge termination region and a second edge termination region coupled to the second epitaxial N-type gallium nitride layer and separated from each other by a portion of the second epitaxial N-type gallium nitride layer; forming a Schottky contact coupled to the portion of the second epitaxial N-type gallium nitride layer and to the first edge termination region and the second edge termination region; removing the engineered substrate to expose a back surface of the first epitaxial N-type gallium nitride layer; and forming an ohmic contact coupled to the back surface of the first epitaxial N-type gallium nitride layer. Original
The method of claim 12 further comprising forming a metal tab attached to the ohmic contact via a solder. Original
The method of claim 12 wherein the second epitaxial N-type gallium nitride layer has a thickness ranging from about 10 p m to about 25 pm. Original
The method of claim 12 wherein forming the first edge termination region and the second edge termination region comprises ion implanting magnesium (Mg) a first portion and a second portion of the second epitaxial N-type gallium nitride layer. Original
The method of claim 12 further comprising: forming a plurality of junction barrier Schottky (JBS) grid regions in the portion of the second epitaxial N-type gallium nitride layer between the first edge termination region and the second edge termination region, wherein the plurality of JB S grid regions are coupled to the Schottky contact. Withdrawn
A vertical Schottky diode comprising: a metal tab; an ohmic contact coupled to the metal tab; a first epitaxial N-type gallium nitride layer electrically contacting the ohmic contact and having a first doping concentration; a second epitaxial N-type gallium nitride layer physically contacting the first epitaxial N-type gallium nitride layer and having a second doping concentration that is lower than the first doping concentration; and a Schottky contact coupled to a portion of the second epitaxial N-type gallium nitride layer, the Schottky contact having a step-wise structure such that a cross-section of the Schottky contact is narrower in a region proximal to the second epitaxial N-type gallium nitride layer and wider in a second region distal to the second epitaxial N-type gallium nitride layer. Withdrawn
The vertical Schottky diode of claim 18 wherein the second epitaxial N-type gallium nitride layer has a thickness ranging from about 10 p m to about 25 pm. Withdrawn
The vertical Schottky diode of claim 18 wherein the first doping concentration ranges from about 1 x10 1 8 to about 5 x 10 18. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
vertical Schottky diode
vertical junction barrier Schottky (JBS) diode
Materials described outside the worked examples.
first epitaxial N-type gallium nitride layer
GaN
gallium nitride doped with magnesium
GaN:Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. Because the engineered substrate includes a core 110 (e.g., A l N) that may have a coefficient of thermal expansion (CTE) that is substantially matched …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 0.1 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,411,108Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. Because the engineered substrate includes a core 110 (e.g., A l N) that may have a coefficient of thermal expansion (CTE) that is substantially matched …
FIG. 2 shows a simplified flowchart illustrating a method of forming a Schottky barrier diode (SBD) according to some embodiments of the present invention. [0008]
FIG. 3F. Referring to
FIG. 4 illustrates schematically a perspective view of a Schottky diode 400 that may be made using the method 200 described above, according to an embodiment …
FIG. 5 illustrates schematically a cross-sectional view of a vertical Schottky diode 500 according to some embodiments of the present invention. The vertical …
FIG. 6 illustrates schematically a cross-sectional view of a vertical junction barrier Schottky (JBS) diode according to some embodiments of the present …
FIG. 8 shows a gray-scale plot of the doping concentrations of a Schottky diode according to some embodiments of the present invention. For example, the doping …
FIG. 9 shows a gray-scale plot of the doping concentrations of a Schottky diode according to some other embodiments of the present invention. Each of the first …
FIG. 10 shows a simplified flowchart illustrating a method 1000 of forming a vertical Schottky diode according to some embodiments of the present invention. The …
FIG. 11 illustrates schematically a cross- sectional view of a vertical Schottky diode 1100 according to some embodiments of the present invention. The …
FIG. 12 is suitable for a variety of electronic and optical applications. The engineered substrate 1200 includes a core 1210 that may have a coefficient of …
FIG. 13 is suitable for a variety of electronic and optical applications. The engineered substrate 1300 includes a core 1310 that may have a coefficient of …
FIG. 14, it will be appreciated that deposition of adhesion layer material on other portions of the core 1410 will not adversely impact the performance of the …
FIG. 15 is a simplified flowchart illustrating a method 1500 of forming a vertical Schottky diode according to an embodiment of the present invention. The method …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical Schottky diode comprising: an ohmic contact; a first epitaxial N-type gallium nitride layer physically contacting the ohmic contact and having a first doping concentration; a second epitaxial N-type gallium nitride layer physically contacting the first epitaxial N-type gallium nitride layer and having a second doping concentration that is lower than the first doping concentration; a first edge termination region and a second edge termination region coupled to the second epitaxial N-type gallium nitride layer and separated from each other by a portion of the second epitaxial N-type gallium nitride layer; and a Schottky contact coupled to the portion of the second epitaxial N-type gallium nitride layer, and to the first edge termination region and the second edge termination region. Withdrawn
The vertical Schottky diode of claim 1 further comprising a metal tab attached to the ohmic contact via a solder. Withdrawn
The vertical Schottky diode of claim 1 wherein the second epitaxial N-type gallium nitride layer has a thickness ranging from about 10 p m to about 25 pm. Withdrawn
The vertical Schottky diode of claim 1 wherein the second epitaxial N-type gallium nitride layer comprises an epitaxial interfacial layer at an interface with the first epitaxial N-type gallium nitride layer. Withdrawn
The vertical Schottky diode of claim 1 wherein the first doping concentration ranges from about 1 x101 8 c m3 to about 5 x101 8 c m 3. Withdrawn
The vertical Schottky diode of claim 1 wherein each of the first edge termination region and the second edge termination region comprises gallium nitride doped with magnesium (Mg). Withdrawn
The vertical Schottky diode of claim 1 further comprising a plurality of junction barrier Schottky (JBS) grid regions in the portion of the second epitaxial N- type gallium nitride layer between the first edge termination region and the second edge termination region, the plurality of JBS grid regions being coupled to the Schot t ky contact. Withdrawn
The vertical Schottky diode of claim 1 wherein each of the first edge termination region and the second edge termination region comprises a single zone having a third doping concentration ranging from about 2 x10 5 cm- 3 to about 5 x 10 16 cm- 3. Withdrawn
The vertical Schottky diode of claim 1 wherein each of the first edge termination region and the second edge termination region comprises a first zone and a second zone, the first zone having a third doping concentration ranging from about 2x 10' 5 cm⁻³ to about 5 x 10 16 cm⁻³, and the second zone having a fourth doping concentration ranging from about 5 x101 6 CM- 3 to about 5x 101 7 cm 3. Withdrawn
A method of forming a vertical Schottky diode, the method comprising: providing an engineered substrate, the engineered substrate comprising: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline silicon layer coupled to the bounding layer; forming a first epitaxial N-type gallium nitride layer coupled to the substantially single crystalline silicon layer and having a first doping concentration; forming a second epitaxial N-type gallium nitride layer coupled to the first epitaxial N-type gallium nitride layer and having a second doping concentration that is lower than the first doping concentration; forming a first edge termination region and a second edge termination region coupled to the second epitaxial N-type gallium nitride layer and separated from each other by a portion of the second epitaxial N-type gallium nitride layer; forming a Schottky contact coupled to the portion of the second epitaxial N-type gallium nitride layer and to the first edge termination region and the second edge termination region; removing the engineered substrate to expose a back surface of the first epitaxial N-type gallium nitride layer; and forming an ohmic contact coupled to the back surface of the first epitaxial N-type gallium nitride layer. Original
The method of claim 12 further comprising forming a metal tab attached to the ohmic contact via a solder. Original
The method of claim 12 wherein the second epitaxial N-type gallium nitride layer has a thickness ranging from about 10 p m to about 25 pm. Original
The method of claim 12 wherein forming the first edge termination region and the second edge termination region comprises ion implanting magnesium (Mg) a first portion and a second portion of the second epitaxial N-type gallium nitride layer. Original
The method of claim 12 further comprising: forming a plurality of junction barrier Schottky (JBS) grid regions in the portion of the second epitaxial N-type gallium nitride layer between the first edge termination region and the second edge termination region, wherein the plurality of JB S grid regions are coupled to the Schottky contact. Withdrawn
A vertical Schottky diode comprising: a metal tab; an ohmic contact coupled to the metal tab; a first epitaxial N-type gallium nitride layer electrically contacting the ohmic contact and having a first doping concentration; a second epitaxial N-type gallium nitride layer physically contacting the first epitaxial N-type gallium nitride layer and having a second doping concentration that is lower than the first doping concentration; and a Schottky contact coupled to a portion of the second epitaxial N-type gallium nitride layer, the Schottky contact having a step-wise structure such that a cross-section of the Schottky contact is narrower in a region proximal to the second epitaxial N-type gallium nitride layer and wider in a second region distal to the second epitaxial N-type gallium nitride layer. Withdrawn
The vertical Schottky diode of claim 18 wherein the second epitaxial N-type gallium nitride layer has a thickness ranging from about 10 p m to about 25 pm. Withdrawn
The vertical Schottky diode of claim 18 wherein the first doping concentration ranges from about 1 x10 1 8 to about 5 x 10 18. Withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
vertical Schottky diode
vertical junction barrier Schottky (JBS) diode
Materials described outside the worked examples.
first epitaxial N-type gallium nitride layer
GaN
gallium nitride doped with magnesium
GaN:Mg
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. Because the engineered substrate includes a core 110 (e.g., A l N) that may have a coefficient of thermal expansion (CTE) that is substantially matched …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 0.1 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
vertical Schottky diode with step-wise Schottky contact and metal tab
engineered substrate
polycrystalline aluminum nitride core
AlN
TEOS oxide adhesion/encapsulation layer
SiO₂
exfoliated silicon (111) layer
Si
FIG. 12 is suitable for a variety of electronic and optical applications. The engineered substrate 1200 includes a core 1210 that may have a coefficient of …
FIG. 14, it will be appreciated that deposition of adhesion layer material on other portions of the core 1410 will not adversely impact the performance of the …
FIG. 14, it will be appreciated that deposition of adhesion layer material on other portions of the core 1410 will not adversely impact the performance of the …
| — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 0.2 nm | — |
Temperature | ≥ 20 k | — |
vertical Schottky diode with step-wise Schottky contact and metal tab
engineered substrate
polycrystalline aluminum nitride core
AlN
TEOS oxide adhesion/encapsulation layer
SiO₂
exfoliated silicon (111) layer
Si
FIG. 12 is suitable for a variety of electronic and optical applications. The engineered substrate 1200 includes a core 1210 that may have a coefficient of …
FIG. 14, it will be appreciated that deposition of adhesion layer material on other portions of the core 1410 will not adversely impact the performance of the …
FIG. 14, it will be appreciated that deposition of adhesion layer material on other portions of the core 1410 will not adversely impact the performance of the …
| — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 0.2 nm | — |
Temperature | ≥ 20 k | — |
vertical Schottky diode with step-wise Schottky contact and metal tab
engineered substrate
polycrystalline aluminum nitride core
AlN
TEOS oxide adhesion/encapsulation layer
SiO₂
exfoliated silicon (111) layer
Si
FIG. 12 is suitable for a variety of electronic and optical applications. The engineered substrate 1200 includes a core 1210 that may have a coefficient of …
FIG. 14, it will be appreciated that deposition of adhesion layer material on other portions of the core 1410 will not adversely impact the performance of the …
FIG. 14, it will be appreciated that deposition of adhesion layer material on other portions of the core 1410 will not adversely impact the performance of the …
| — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 0.2 nm | — |
Temperature | ≥ 20 k | — |
vertical Schottky diode with step-wise Schottky contact and metal tab
engineered substrate
polycrystalline aluminum nitride core
AlN
TEOS oxide adhesion/encapsulation layer
SiO₂
exfoliated silicon (111) layer
Si
FIG. 12 is suitable for a variety of electronic and optical applications. The engineered substrate 1200 includes a core 1210 that may have a coefficient of …
FIG. 14, it will be appreciated that deposition of adhesion layer material on other portions of the core 1410 will not adversely impact the performance of the …
FIG. 14, it will be appreciated that deposition of adhesion layer material on other portions of the core 1410 will not adversely impact the performance of the …
| — |
Thickness | ≤ 0.5 nm | — |
Thickness | ≤ 0.2 nm | — |
Temperature | ≥ 20 k | — |