INDIUM SURFACTANT ASSISTED HVPE OF HIGH QUALITY GALLIUM NITRIDE AND GALLIUM NITRIDE ALLOY FILMS

Jie Su

Patent

Atlas literature

Patent

US 8,148,241

INDIUM SURFACTANT ASSISTED HVPE OF HIGH QUALITY GALLIUM NITRIDE AND GALLIUM NITRIDE ALLOY FILMS

Jie Su, Olga Kryliouk

2012-04-03·US

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 7 dependent

1
IndependentInGaNgroup III nitride film
A method of depositing a group III nitride ﬁlm comprising: providing an In source and a Ga source; depositing a GaN ﬁlm; depositing a monolayer of In on the surface of the GaN ﬁlm; and heating the GaN ﬁlm to a deposition temperature suﬃciently high to prevent the In from being incorporated into the GaN ﬁlm.
1. 2
  Dependent← claim 1GaN
  The method of claim 1, wherein the GaN ﬁlm is deposited on a substrate.
2. 5
  Dependent← claim 1InGaN
  The method of claim 1, wherein the atomic ratio of In to Ga is 1-10% In to 90-99% Ga.
3. 6
  Dependent← claim 1
  The method of claim 1, wherein the deposition temperature is greater than 900 °C.
4. 7
  Dependent← claim 1InGaN
  The method of claim 1, wherein the In and the Ga are provided as a single source alloy.
5. 8
  Dependent← claim 1InGaN
  The method of claim 1, wherein the In and the Ga are provided as separate sources.
6. 9
  Dependent← claim 1GaNgroup III nitride device stack
  The method of claim 1, wherein a buﬀer layer is deposited on top of the substrate, the G aN ﬁlm is deposited on top of the buﬀer layer and one or more device layers are deposited on top of the GaN ﬁlm.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

group III nitride device stack

device layersdevice layers

GaNGaN film

buffer layerbuffer layer

substratesubstrate

Materials

Materials described outside the worked examples.

Indium (In)

Surfactant/Claimed Source Material

GaN

Claimed Film Material

group III nitride film

Process steps

Additional fabrication and treatment steps described in the patent.

Hvpe Growth

Step 1

Process details

method:HVPE

In role:surfactant monolayer; not incorporated into GaN film

source configuration:single source alloy or separate sources

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Temperature	≥ 900 °C	—

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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