GaN single crystal grown on a 2-inch AlN template seed crystal using HIP yoke-frame system. Alumina crucible (100 mm diameter, 120 mm height) loaded with 200 g Na and 200 g Ga. Gas mixture: 40% N₂/60% Ar at 1200 atms total pressure (480 atms N₂ partial pressure), temperature 1000°C, held 24 h then elevated to contact seed, grown 100 h. Result: GaN single crystal 5 mm thick, 2 inches diameter.

Same procedure as Example 1 except total pressure 300 atms (40% N₂/60% Ar, nitrogen partial pressure 120 atms), temperature 1000°C. Result: GaN single crystal ~2.5 mm thick, 2 inches diameter. Trace Na evaporation observed but did not substantially affect growth.

Same procedure as Example 1 except growing temperature 850°C. Many GaN single crystals 1-3 mm in size were grown on crucible inner wall and AlN template; no large single crystal obtained.

Same procedure as Example 1 except 100 g Ga, 100 g Na, 0.5 g Li used and pure N₂ at 300 atms total pressure (nitrogen partial pressure 300 atms). Result: GaN single crystal 4 mm thick, 2 inches diameter.

Same procedure as Example 4 except 50% N₂/50% Ar gas mixture and growth temperature 1200°C. Total pressure 1200 atms, nitrogen partial pressure 600 atms. Result: GaN single crystal ~5 mm thick, 2 inches diameter.

Same procedure as Example 1 except total pressure 200 atms and nitrogen partial pressure 80 atms. AlN template was molten; GaN single crystal could not be obtained. Part of Na evaporated, changing solution height.

GaN single crystal grown on a 2-inch AlN template seed crystal using HIP yoke-frame system. Alumina crucible (100 mm diameter, 120 mm height) loaded with 200 g Na and 200 g Ga. Gas mixture: 40% N₂/60% Ar at 1200 atms total pressure (480 atms N₂ partial pressure), temperature 1000°C, held 24 h then elevated to contact seed, grown 100 h. Result: GaN single crystal 5 mm thick, 2 inches diameter.

Same procedure as Example 1 except total pressure 300 atms (40% N₂/60% Ar, nitrogen partial pressure 120 atms), temperature 1000°C. Result: GaN single crystal ~2.5 mm thick, 2 inches diameter. Trace Na evaporation observed but did not substantially affect growth.

Same procedure as Example 1 except growing temperature 850°C. Many GaN single crystals 1-3 mm in size were grown on crucible inner wall and AlN template; no large single crystal obtained.

Same procedure as Example 1 except 100 g Ga, 100 g Na, 0.5 g Li used and pure N₂ at 300 atms total pressure (nitrogen partial pressure 300 atms). Result: GaN single crystal 4 mm thick, 2 inches diameter.

Same procedure as Example 4 except 50% N₂/50% Ar gas mixture and growth temperature 1200°C. Total pressure 1200 atms, nitrogen partial pressure 600 atms. Result: GaN single crystal ~5 mm thick, 2 inches diameter.

Same procedure as Example 1 except total pressure 200 atms and nitrogen partial pressure 80 atms. AlN template was molten; GaN single crystal could not be obtained. Part of Na evaporated, changing solution height.

GaN single crystal grown on a 2-inch AlN template seed crystal using HIP yoke-frame system. Alumina crucible (100 mm diameter, 120 mm height) loaded with 200 g Na and 200 g Ga. Gas mixture: 40% N₂/60% Ar at 1200 atms total pressure (480 atms N₂ partial pressure), temperature 1000°C, held 24 h then elevated to contact seed, grown 100 h. Result: GaN single crystal 5 mm thick, 2 inches diameter.

Same procedure as Example 1 except total pressure 300 atms (40% N₂/60% Ar, nitrogen partial pressure 120 atms), temperature 1000°C. Result: GaN single crystal ~2.5 mm thick, 2 inches diameter. Trace Na evaporation observed but did not substantially affect growth.

Same procedure as Example 1 except growing temperature 850°C. Many GaN single crystals 1-3 mm in size were grown on crucible inner wall and AlN template; no large single crystal obtained.

Same procedure as Example 1 except 100 g Ga, 100 g Na, 0.5 g Li used and pure N₂ at 300 atms total pressure (nitrogen partial pressure 300 atms). Result: GaN single crystal 4 mm thick, 2 inches diameter.

Same procedure as Example 4 except 50% N₂/50% Ar gas mixture and growth temperature 1200°C. Total pressure 1200 atms, nitrogen partial pressure 600 atms. Result: GaN single crystal ~5 mm thick, 2 inches diameter.

Same procedure as Example 1 except total pressure 200 atms and nitrogen partial pressure 80 atms. AlN template was molten; GaN single crystal could not be obtained. Part of Na evaporated, changing solution height.

GaN single crystal grown on a 2-inch AlN template seed crystal using HIP yoke-frame system. Alumina crucible (100 mm diameter, 120 mm height) loaded with 200 g Na and 200 g Ga. Gas mixture: 40% N₂/60% Ar at 1200 atms total pressure (480 atms N₂ partial pressure), temperature 1000°C, held 24 h then elevated to contact seed, grown 100 h. Result: GaN single crystal 5 mm thick, 2 inches diameter.

Same procedure as Example 1 except total pressure 300 atms (40% N₂/60% Ar, nitrogen partial pressure 120 atms), temperature 1000°C. Result: GaN single crystal ~2.5 mm thick, 2 inches diameter. Trace Na evaporation observed but did not substantially affect growth.

Same procedure as Example 1 except growing temperature 850°C. Many GaN single crystals 1-3 mm in size were grown on crucible inner wall and AlN template; no large single crystal obtained.

Same procedure as Example 1 except 100 g Ga, 100 g Na, 0.5 g Li used and pure N₂ at 300 atms total pressure (nitrogen partial pressure 300 atms). Result: GaN single crystal 4 mm thick, 2 inches diameter.

Same procedure as Example 4 except 50% N₂/50% Ar gas mixture and growth temperature 1200°C. Total pressure 1200 atms, nitrogen partial pressure 600 atms. Result: GaN single crystal ~5 mm thick, 2 inches diameter.

Same procedure as Example 1 except total pressure 200 atms and nitrogen partial pressure 80 atms. AlN template was molten; GaN single crystal could not be obtained. Part of Na evaporated, changing solution height.