Patent
US 9,012,306MANUFACTURING OF LOW DEFECT DENSITY FREE-STANDING GALLIUM NITRIDE SUBSTRATES AND DEVICES FABRICATED THEREOF
Bernard Beaumont
US
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Atlas literature
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US 9,012,306Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a single crystal of nitride by epitaxial growth on a support (100) comprising a growth face (105), the method comprising the steps of: formation of a sacrificial bed (101) on the support (100), wherein a plurality of first openings within the sacrificial bed expose portions of the growth face; epitaxial growth of a layer including a material compatible with GaN epitaxial growth, wherein the layer is grown from the portions of the growth face and extending over the sacrificial bed; formation of pillars (102) on said sacrificial bed, said pillars being formed by patterning the layer; formation of a first mask between the pillars, wherein at least a portion of the mask covers a portion of the growth face; growth of a nitride crystal layer (103) on the pillars, under growing conditions such that the nitride crystal layer does not extend down to the support within the holes (107) formed between the pillars; and removing the nitride crystal layer from the support.
The method according to claim 1, wherein each pillar of the pillars (102) comprises walls (104), said walls being perpendicular to the growth face of the support.
The method according to claim 1, wherein the pillars (102) have substantially the same height (D).
The method according to claim 1, wherein the pillars (102) have superior faces defining a growth face, the superior faces being above 20% of an overall surface of a growth face of the support.
The method according to claim 1, wherein the pillars (102) define a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars, and wherein the ratio D/d is greater than or equal to 1.5.
The method according to claim 1, wherein the pillars (102) are discrete pillars, separated from each other by a distance (d).
The method according to claim 1, wherein the pillars (102) are uniformly distributed on the support.
The method according to claim 1, wherein the pillars (102) are made of GaN.
The method according to claim 1, wherein the sacrificial bed (101) comprises a chemically removable material.
The method according to claim 1, wherein the layer including the material compatible with GaN epitaxial growth comprises GaN.
The method according to claim 1, wherein patterning the layer including the material compatible with GaN epitaxial growth comprises: deposition of a second mask on the layer, said second mask comprising a plurality of second openings; and etching the layer to form the pillars (102).
The method according to claim 1, wherein removing the nitride crystal layer from the support comprises etching the sacrificial bed.
A substrate for manufacturing a single crystal of nitride by epitaxial growth, said substrate comprising a support and a plurality of pillars on the support, wherein said substrate further comprises a sacrificial bed between the support and the pillars as defined in claim 1, wherein a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars is greater than or equal to 1.5.
A semiconductor material comprising a substrate and a single crystal of nitride on the substrate, wherein said substrate comprises a support, a sacrificial bed on the support, and a plurality of pillars on said sacrificial bed as defined in claim 1, wherein a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars is greater than or equal to 1.5.
. A single crystal of nitride comprising pillars, said single Page 4 of 8 U. S. App. No.: 13/167,925 crystal being obtained by a method according to claim 1, wherein a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars is greater than or equal to 1.5. Page 5 of 8 U.S. App. No.: 13/167,925
canceled
Page 3 of 8 U. S. App. No.: 13/167,925 canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
pillar-based epitaxial growth substrate for nitride single crystal manufacturing
substrate for nitride epitaxial growth with sacrificial bed and pillars
Materials described outside the worked examples.
nitride single crystal
GaN
material compatible with GaN epitaxial growth
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 60–360 seconds | — |
Thickness | 20–30 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,012,306Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a single crystal of nitride by epitaxial growth on a support (100) comprising a growth face (105), the method comprising the steps of: formation of a sacrificial bed (101) on the support (100), wherein a plurality of first openings within the sacrificial bed expose portions of the growth face; epitaxial growth of a layer including a material compatible with GaN epitaxial growth, wherein the layer is grown from the portions of the growth face and extending over the sacrificial bed; formation of pillars (102) on said sacrificial bed, said pillars being formed by patterning the layer; formation of a first mask between the pillars, wherein at least a portion of the mask covers a portion of the growth face; growth of a nitride crystal layer (103) on the pillars, under growing conditions such that the nitride crystal layer does not extend down to the support within the holes (107) formed between the pillars; and removing the nitride crystal layer from the support.
The method according to claim 1, wherein each pillar of the pillars (102) comprises walls (104), said walls being perpendicular to the growth face of the support.
The method according to claim 1, wherein the pillars (102) have substantially the same height (D).
The method according to claim 1, wherein the pillars (102) have superior faces defining a growth face, the superior faces being above 20% of an overall surface of a growth face of the support.
The method according to claim 1, wherein the pillars (102) define a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars, and wherein the ratio D/d is greater than or equal to 1.5.
The method according to claim 1, wherein the pillars (102) are discrete pillars, separated from each other by a distance (d).
The method according to claim 1, wherein the pillars (102) are uniformly distributed on the support.
The method according to claim 1, wherein the pillars (102) are made of GaN.
The method according to claim 1, wherein the sacrificial bed (101) comprises a chemically removable material.
The method according to claim 1, wherein the layer including the material compatible with GaN epitaxial growth comprises GaN.
The method according to claim 1, wherein patterning the layer including the material compatible with GaN epitaxial growth comprises: deposition of a second mask on the layer, said second mask comprising a plurality of second openings; and etching the layer to form the pillars (102).
The method according to claim 1, wherein removing the nitride crystal layer from the support comprises etching the sacrificial bed.
A substrate for manufacturing a single crystal of nitride by epitaxial growth, said substrate comprising a support and a plurality of pillars on the support, wherein said substrate further comprises a sacrificial bed between the support and the pillars as defined in claim 1, wherein a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars is greater than or equal to 1.5.
A semiconductor material comprising a substrate and a single crystal of nitride on the substrate, wherein said substrate comprises a support, a sacrificial bed on the support, and a plurality of pillars on said sacrificial bed as defined in claim 1, wherein a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars is greater than or equal to 1.5.
. A single crystal of nitride comprising pillars, said single Page 4 of 8 U. S. App. No.: 13/167,925 crystal being obtained by a method according to claim 1, wherein a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars is greater than or equal to 1.5. Page 5 of 8 U.S. App. No.: 13/167,925
canceled
Page 3 of 8 U. S. App. No.: 13/167,925 canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
pillar-based epitaxial growth substrate for nitride single crystal manufacturing
substrate for nitride epitaxial growth with sacrificial bed and pillars
Materials described outside the worked examples.
nitride single crystal
GaN
material compatible with GaN epitaxial growth
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 60–360 seconds | — |
Thickness | 20–30 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,012,306Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a single crystal of nitride by epitaxial growth on a support (100) comprising a growth face (105), the method comprising the steps of: formation of a sacrificial bed (101) on the support (100), wherein a plurality of first openings within the sacrificial bed expose portions of the growth face; epitaxial growth of a layer including a material compatible with GaN epitaxial growth, wherein the layer is grown from the portions of the growth face and extending over the sacrificial bed; formation of pillars (102) on said sacrificial bed, said pillars being formed by patterning the layer; formation of a first mask between the pillars, wherein at least a portion of the mask covers a portion of the growth face; growth of a nitride crystal layer (103) on the pillars, under growing conditions such that the nitride crystal layer does not extend down to the support within the holes (107) formed between the pillars; and removing the nitride crystal layer from the support.
The method according to claim 1, wherein each pillar of the pillars (102) comprises walls (104), said walls being perpendicular to the growth face of the support.
The method according to claim 1, wherein the pillars (102) have substantially the same height (D).
The method according to claim 1, wherein the pillars (102) have superior faces defining a growth face, the superior faces being above 20% of an overall surface of a growth face of the support.
The method according to claim 1, wherein the pillars (102) define a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars, and wherein the ratio D/d is greater than or equal to 1.5.
The method according to claim 1, wherein the pillars (102) are discrete pillars, separated from each other by a distance (d).
The method according to claim 1, wherein the pillars (102) are uniformly distributed on the support.
The method according to claim 1, wherein the pillars (102) are made of GaN.
The method according to claim 1, wherein the sacrificial bed (101) comprises a chemically removable material.
The method according to claim 1, wherein the layer including the material compatible with GaN epitaxial growth comprises GaN.
The method according to claim 1, wherein patterning the layer including the material compatible with GaN epitaxial growth comprises: deposition of a second mask on the layer, said second mask comprising a plurality of second openings; and etching the layer to form the pillars (102).
The method according to claim 1, wherein removing the nitride crystal layer from the support comprises etching the sacrificial bed.
A substrate for manufacturing a single crystal of nitride by epitaxial growth, said substrate comprising a support and a plurality of pillars on the support, wherein said substrate further comprises a sacrificial bed between the support and the pillars as defined in claim 1, wherein a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars is greater than or equal to 1.5.
A semiconductor material comprising a substrate and a single crystal of nitride on the substrate, wherein said substrate comprises a support, a sacrificial bed on the support, and a plurality of pillars on said sacrificial bed as defined in claim 1, wherein a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars is greater than or equal to 1.5.
. A single crystal of nitride comprising pillars, said single Page 4 of 8 U. S. App. No.: 13/167,925 crystal being obtained by a method according to claim 1, wherein a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars is greater than or equal to 1.5. Page 5 of 8 U.S. App. No.: 13/167,925
canceled
Page 3 of 8 U. S. App. No.: 13/167,925 canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
pillar-based epitaxial growth substrate for nitride single crystal manufacturing
substrate for nitride epitaxial growth with sacrificial bed and pillars
Materials described outside the worked examples.
nitride single crystal
GaN
material compatible with GaN epitaxial growth
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 60–360 seconds | — |
Thickness | 20–30 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,012,306Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a single crystal of nitride by epitaxial growth on a support (100) comprising a growth face (105), the method comprising the steps of: formation of a sacrificial bed (101) on the support (100), wherein a plurality of first openings within the sacrificial bed expose portions of the growth face; epitaxial growth of a layer including a material compatible with GaN epitaxial growth, wherein the layer is grown from the portions of the growth face and extending over the sacrificial bed; formation of pillars (102) on said sacrificial bed, said pillars being formed by patterning the layer; formation of a first mask between the pillars, wherein at least a portion of the mask covers a portion of the growth face; growth of a nitride crystal layer (103) on the pillars, under growing conditions such that the nitride crystal layer does not extend down to the support within the holes (107) formed between the pillars; and removing the nitride crystal layer from the support.
The method according to claim 1, wherein each pillar of the pillars (102) comprises walls (104), said walls being perpendicular to the growth face of the support.
The method according to claim 1, wherein the pillars (102) have substantially the same height (D).
The method according to claim 1, wherein the pillars (102) have superior faces defining a growth face, the superior faces being above 20% of an overall surface of a growth face of the support.
The method according to claim 1, wherein the pillars (102) define a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars, and wherein the ratio D/d is greater than or equal to 1.5.
The method according to claim 1, wherein the pillars (102) are discrete pillars, separated from each other by a distance (d).
The method according to claim 1, wherein the pillars (102) are uniformly distributed on the support.
The method according to claim 1, wherein the pillars (102) are made of GaN.
The method according to claim 1, wherein the sacrificial bed (101) comprises a chemically removable material.
The method according to claim 1, wherein the layer including the material compatible with GaN epitaxial growth comprises GaN.
The method according to claim 1, wherein patterning the layer including the material compatible with GaN epitaxial growth comprises: deposition of a second mask on the layer, said second mask comprising a plurality of second openings; and etching the layer to form the pillars (102).
The method according to claim 1, wherein removing the nitride crystal layer from the support comprises etching the sacrificial bed.
A substrate for manufacturing a single crystal of nitride by epitaxial growth, said substrate comprising a support and a plurality of pillars on the support, wherein said substrate further comprises a sacrificial bed between the support and the pillars as defined in claim 1, wherein a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars is greater than or equal to 1.5.
A semiconductor material comprising a substrate and a single crystal of nitride on the substrate, wherein said substrate comprises a support, a sacrificial bed on the support, and a plurality of pillars on said sacrificial bed as defined in claim 1, wherein a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars is greater than or equal to 1.5.
. A single crystal of nitride comprising pillars, said single Page 4 of 8 U. S. App. No.: 13/167,925 crystal being obtained by a method according to claim 1, wherein a ratio D/d of a height D of one pillar to a distance d between two adjacent pillars is greater than or equal to 1.5. Page 5 of 8 U.S. App. No.: 13/167,925
canceled
Page 3 of 8 U. S. App. No.: 13/167,925 canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
pillar-based epitaxial growth substrate for nitride single crystal manufacturing
substrate for nitride epitaxial growth with sacrificial bed and pillars
Materials described outside the worked examples.
nitride single crystal
GaN
material compatible with GaN epitaxial growth
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 60–360 seconds | — |
Thickness | 20–30 nm |
Related documents with shared materials, methods, properties, or citations.
semiconductor material with nitride single crystal on pillar substrate
chemically removable material
silicon dioxide
SiO₂
sapphire
| — |
Temperature | 800–1200 °C | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 1000000 cm | — |
semiconductor material with nitride single crystal on pillar substrate
chemically removable material
silicon dioxide
SiO₂
sapphire
| — |
Temperature | 800–1200 °C | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 1000000 cm | — |
semiconductor material with nitride single crystal on pillar substrate
chemically removable material
silicon dioxide
SiO₂
sapphire
| — |
Temperature | 800–1200 °C | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 1000000 cm | — |
semiconductor material with nitride single crystal on pillar substrate
chemically removable material
silicon dioxide
SiO₂
sapphire
| — |
Temperature | 800–1200 °C | — |
Thickness | ≤ 10 cm | — |
Thickness | ≤ 1000000 cm | — |