Patent
US 8,383,494METHOD FOR FORMING BUFFER LAYER FOR GaN SINGLE CRYSTAL
Kyung Seob HAN
US
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Patent
Atlas literature
Patent
US 8,383,494Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an optical microscope image of a buffer layer according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a buffer layer for growing gallium nitride single crystals on a sapphire substrate using hydride vapor phase epitaxy (HVPE), wherein the buffer layer is formed in the form of an undoped vertical gallium nitride (GaN) single crystal film with a nanoporosity of 0.10 to 0.15 p m on the sapphire substrate by reacting HCl and NH₃ as a Group IIUV mix gas, wherein the method comprises: first reacting HCl and NH₃ as the mix gas in a ratio of 1: 2 2C₂₀ to 1: 280 for 5 to 15 minutes to grow a film of a thickness of 1 to 5 pm; second reacting HCl and NH₃ as the mix gas in a ratio of 1: 4213) to 1: 150 for 15 to 25 minutes to grow a film of a thickness of 1 to 10 p m, thereby forming a nano-porous vertical film with nanoporosity of 0.10 to 0.15 pm; third reacting HCL and NH₃ as the mix gas in a ratio of 1: 7080 to 1: 100 for 20 to 35 minutes to grow a film of a thickness of 1 to 7 pm; treating the film grown by the third reaction of HCl and NH₃ with nitride; treating the film treated with nitride with gallium chloride (GaCl) for 10 to 20 minutes; and 2 LNK⁻⁰²²²-SE repeating the previous second reaction of HCl and NH₃ to form a film to a thickness of 1 to 5 pm, wherein the method further comprises treating the sapphire substrate with gallium chloride (GaCl) at a temperature of 500 to 1,200 C, before the formation of the buffer layer.
The method according to claim 1, wherein the buffer layer is formed to a total thickness of 5 to 25 pm.
canceled
The method according to ehirrclairn 1, further comprising dipping the substrate in phosphoric acid (H₃P O 4) at 50 to 150 C for 10 to 330 seconds, after the formation of the buffer layer.
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials6 process steps
A 2-inch sapphire substrate (430 µm thick) is pre-treated with GaCl and loaded into a HVPE reactor at 1,040°C. A buffer layer is formed by: (1) reacting HCl:NH₃ at 1:220 for 10 min to grow a 4 µm film; (2) reacting HCl:NH₃ at 1:130 for 20 min to form a nano-porous vertical film of 9 µm; (3) reacting HCl:NH₃ at 1:80 for 30 min to grow a 7 µm film, then nitrating with ammonia and treating with GaCl for 20 min; (4) reacting HCl:NH₃ at 1:130 for 15 min to grow a 5 µm film; total buffer layer thickness 25 µm. The buffer layer is dipped in H₃PO₄ at 120°C for 5 min. GaN is then grown by reacting HCl:NH₃ at 1:8 for 30 min, then at 1:1 for 6 hours with 5 cc/min dichlorosilane, forming an n-type GaN single crystal film of 500 µm total thickness. The GaN is separated from sapphire by LLO to yield a free-standing GaN wafer. Characterization by DXRD, PL, and optical microscopy shows FWHM (DCRC ω-scan) <100 arcsec, dislocation density <10⁵/cm², thickness uniformity 5%, no cracks.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-sapphire with nanoporous GaN buffer layer
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
FWHM of DCRC (ω-scan) | <100 arcsec | GaN |
Dislocation Density in GaN | ≤ 100000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,383,494Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an optical microscope image of a buffer layer according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a buffer layer for growing gallium nitride single crystals on a sapphire substrate using hydride vapor phase epitaxy (HVPE), wherein the buffer layer is formed in the form of an undoped vertical gallium nitride (GaN) single crystal film with a nanoporosity of 0.10 to 0.15 p m on the sapphire substrate by reacting HCl and NH₃ as a Group IIUV mix gas, wherein the method comprises: first reacting HCl and NH₃ as the mix gas in a ratio of 1: 2 2C₂₀ to 1: 280 for 5 to 15 minutes to grow a film of a thickness of 1 to 5 pm; second reacting HCl and NH₃ as the mix gas in a ratio of 1: 4213) to 1: 150 for 15 to 25 minutes to grow a film of a thickness of 1 to 10 p m, thereby forming a nano-porous vertical film with nanoporosity of 0.10 to 0.15 pm; third reacting HCL and NH₃ as the mix gas in a ratio of 1: 7080 to 1: 100 for 20 to 35 minutes to grow a film of a thickness of 1 to 7 pm; treating the film grown by the third reaction of HCl and NH₃ with nitride; treating the film treated with nitride with gallium chloride (GaCl) for 10 to 20 minutes; and 2 LNK⁻⁰²²²-SE repeating the previous second reaction of HCl and NH₃ to form a film to a thickness of 1 to 5 pm, wherein the method further comprises treating the sapphire substrate with gallium chloride (GaCl) at a temperature of 500 to 1,200 C, before the formation of the buffer layer.
The method according to claim 1, wherein the buffer layer is formed to a total thickness of 5 to 25 pm.
canceled
The method according to ehirrclairn 1, further comprising dipping the substrate in phosphoric acid (H₃P O 4) at 50 to 150 C for 10 to 330 seconds, after the formation of the buffer layer.
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials6 process steps
A 2-inch sapphire substrate (430 µm thick) is pre-treated with GaCl and loaded into a HVPE reactor at 1,040°C. A buffer layer is formed by: (1) reacting HCl:NH₃ at 1:220 for 10 min to grow a 4 µm film; (2) reacting HCl:NH₃ at 1:130 for 20 min to form a nano-porous vertical film of 9 µm; (3) reacting HCl:NH₃ at 1:80 for 30 min to grow a 7 µm film, then nitrating with ammonia and treating with GaCl for 20 min; (4) reacting HCl:NH₃ at 1:130 for 15 min to grow a 5 µm film; total buffer layer thickness 25 µm. The buffer layer is dipped in H₃PO₄ at 120°C for 5 min. GaN is then grown by reacting HCl:NH₃ at 1:8 for 30 min, then at 1:1 for 6 hours with 5 cc/min dichlorosilane, forming an n-type GaN single crystal film of 500 µm total thickness. The GaN is separated from sapphire by LLO to yield a free-standing GaN wafer. Characterization by DXRD, PL, and optical microscopy shows FWHM (DCRC ω-scan) <100 arcsec, dislocation density <10⁵/cm², thickness uniformity 5%, no cracks.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-sapphire with nanoporous GaN buffer layer
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
FWHM of DCRC (ω-scan) | <100 arcsec | GaN |
Dislocation Density in GaN | ≤ 100000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,383,494Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an optical microscope image of a buffer layer according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a buffer layer for growing gallium nitride single crystals on a sapphire substrate using hydride vapor phase epitaxy (HVPE), wherein the buffer layer is formed in the form of an undoped vertical gallium nitride (GaN) single crystal film with a nanoporosity of 0.10 to 0.15 p m on the sapphire substrate by reacting HCl and NH₃ as a Group IIUV mix gas, wherein the method comprises: first reacting HCl and NH₃ as the mix gas in a ratio of 1: 2 2C₂₀ to 1: 280 for 5 to 15 minutes to grow a film of a thickness of 1 to 5 pm; second reacting HCl and NH₃ as the mix gas in a ratio of 1: 4213) to 1: 150 for 15 to 25 minutes to grow a film of a thickness of 1 to 10 p m, thereby forming a nano-porous vertical film with nanoporosity of 0.10 to 0.15 pm; third reacting HCL and NH₃ as the mix gas in a ratio of 1: 7080 to 1: 100 for 20 to 35 minutes to grow a film of a thickness of 1 to 7 pm; treating the film grown by the third reaction of HCl and NH₃ with nitride; treating the film treated with nitride with gallium chloride (GaCl) for 10 to 20 minutes; and 2 LNK⁻⁰²²²-SE repeating the previous second reaction of HCl and NH₃ to form a film to a thickness of 1 to 5 pm, wherein the method further comprises treating the sapphire substrate with gallium chloride (GaCl) at a temperature of 500 to 1,200 C, before the formation of the buffer layer.
The method according to claim 1, wherein the buffer layer is formed to a total thickness of 5 to 25 pm.
canceled
The method according to ehirrclairn 1, further comprising dipping the substrate in phosphoric acid (H₃P O 4) at 50 to 150 C for 10 to 330 seconds, after the formation of the buffer layer.
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials6 process steps
A 2-inch sapphire substrate (430 µm thick) is pre-treated with GaCl and loaded into a HVPE reactor at 1,040°C. A buffer layer is formed by: (1) reacting HCl:NH₃ at 1:220 for 10 min to grow a 4 µm film; (2) reacting HCl:NH₃ at 1:130 for 20 min to form a nano-porous vertical film of 9 µm; (3) reacting HCl:NH₃ at 1:80 for 30 min to grow a 7 µm film, then nitrating with ammonia and treating with GaCl for 20 min; (4) reacting HCl:NH₃ at 1:130 for 15 min to grow a 5 µm film; total buffer layer thickness 25 µm. The buffer layer is dipped in H₃PO₄ at 120°C for 5 min. GaN is then grown by reacting HCl:NH₃ at 1:8 for 30 min, then at 1:1 for 6 hours with 5 cc/min dichlorosilane, forming an n-type GaN single crystal film of 500 µm total thickness. The GaN is separated from sapphire by LLO to yield a free-standing GaN wafer. Characterization by DXRD, PL, and optical microscopy shows FWHM (DCRC ω-scan) <100 arcsec, dislocation density <10⁵/cm², thickness uniformity 5%, no cracks.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-sapphire with nanoporous GaN buffer layer
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
FWHM of DCRC (ω-scan) | <100 arcsec | GaN |
Dislocation Density in GaN | ≤ 100000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,383,494Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is an optical microscope image of a buffer layer according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming a buffer layer for growing gallium nitride single crystals on a sapphire substrate using hydride vapor phase epitaxy (HVPE), wherein the buffer layer is formed in the form of an undoped vertical gallium nitride (GaN) single crystal film with a nanoporosity of 0.10 to 0.15 p m on the sapphire substrate by reacting HCl and NH₃ as a Group IIUV mix gas, wherein the method comprises: first reacting HCl and NH₃ as the mix gas in a ratio of 1: 2 2C₂₀ to 1: 280 for 5 to 15 minutes to grow a film of a thickness of 1 to 5 pm; second reacting HCl and NH₃ as the mix gas in a ratio of 1: 4213) to 1: 150 for 15 to 25 minutes to grow a film of a thickness of 1 to 10 p m, thereby forming a nano-porous vertical film with nanoporosity of 0.10 to 0.15 pm; third reacting HCL and NH₃ as the mix gas in a ratio of 1: 7080 to 1: 100 for 20 to 35 minutes to grow a film of a thickness of 1 to 7 pm; treating the film grown by the third reaction of HCl and NH₃ with nitride; treating the film treated with nitride with gallium chloride (GaCl) for 10 to 20 minutes; and 2 LNK⁻⁰²²²-SE repeating the previous second reaction of HCl and NH₃ to form a film to a thickness of 1 to 5 pm, wherein the method further comprises treating the sapphire substrate with gallium chloride (GaCl) at a temperature of 500 to 1,200 C, before the formation of the buffer layer.
The method according to claim 1, wherein the buffer layer is formed to a total thickness of 5 to 25 pm.
canceled
The method according to ehirrclairn 1, further comprising dipping the substrate in phosphoric acid (H₃P O 4) at 50 to 150 C for 10 to 330 seconds, after the formation of the buffer layer.
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials6 process steps
A 2-inch sapphire substrate (430 µm thick) is pre-treated with GaCl and loaded into a HVPE reactor at 1,040°C. A buffer layer is formed by: (1) reacting HCl:NH₃ at 1:220 for 10 min to grow a 4 µm film; (2) reacting HCl:NH₃ at 1:130 for 20 min to form a nano-porous vertical film of 9 µm; (3) reacting HCl:NH₃ at 1:80 for 30 min to grow a 7 µm film, then nitrating with ammonia and treating with GaCl for 20 min; (4) reacting HCl:NH₃ at 1:130 for 15 min to grow a 5 µm film; total buffer layer thickness 25 µm. The buffer layer is dipped in H₃PO₄ at 120°C for 5 min. GaN is then grown by reacting HCl:NH₃ at 1:8 for 30 min, then at 1:1 for 6 hours with 5 cc/min dichlorosilane, forming an n-type GaN single crystal film of 500 µm total thickness. The GaN is separated from sapphire by LLO to yield a free-standing GaN wafer. Characterization by DXRD, PL, and optical microscopy shows FWHM (DCRC ω-scan) <100 arcsec, dislocation density <10⁵/cm², thickness uniformity 5%, no cracks.
Layer stacks claimed or described, ordered top of device to substrate.
GaN-on-sapphire with nanoporous GaN buffer layer
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
FWHM of DCRC (ω-scan) | <100 arcsec | GaN |
Dislocation Density in GaN | ≤ 100000 cm⁻² |
Related documents with shared materials, methods, properties, or citations.
GaN |
Thickness Uniformity | 5 % | GaN |
Crack | Not present | GaN |
Overall dislocation density from nanoporous vertical buffer layer (description) | 5e5 to 1e6 cm⁻² | GaN |
Duration | 5–15 minutes | — |
Duration | 15–25 minutes | — |
Duration | 20–35 minutes | — |
Duration | 10–20 minutes | — |
Duration | 10–330 seconds | — |
GaN |
Thickness Uniformity | 5 % | GaN |
Crack | Not present | GaN |
Overall dislocation density from nanoporous vertical buffer layer (description) | 5e5 to 1e6 cm⁻² | GaN |
Duration | 5–15 minutes | — |
Duration | 15–25 minutes | — |
Duration | 20–35 minutes | — |
Duration | 10–20 minutes | — |
Duration | 10–330 seconds | — |
GaN |
Thickness Uniformity | 5 % | GaN |
Crack | Not present | GaN |
Overall dislocation density from nanoporous vertical buffer layer (description) | 5e5 to 1e6 cm⁻² | GaN |
Duration | 5–15 minutes | — |
Duration | 15–25 minutes | — |
Duration | 20–35 minutes | — |
Duration | 10–20 minutes | — |
Duration | 10–330 seconds | — |
GaN |
Thickness Uniformity | 5 % | GaN |
Crack | Not present | GaN |
Overall dislocation density from nanoporous vertical buffer layer (description) | 5e5 to 1e6 cm⁻² | GaN |
Duration | 5–15 minutes | — |
Duration | 15–25 minutes | — |
Duration | 20–35 minutes | — |
Duration | 10–20 minutes | — |
Duration | 10–330 seconds | — |