METHOD FOR INTEGRATING MEMS MICROSWITCHES ON GaN SUBSTRATES COMPRISING ELECTRONIC POWER COMPONENTS

Afshin Ziaei

Patent

Atlas literature

Patent

US 8,859,318

METHOD FOR INTEGRATING MEMS MICROSWITCHES ON GaN SUBSTRATES COMPRISING ELECTRONIC POWER COMPONENTS

Afshin Ziaei

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 9 dependent

1
IndependentGaNSiO₂Si₃N₄electronic module with power electronic components and MEMS micro-switches on GaN substrate
A method of f abrie ati on- ef fabricatin g an electronic module comp risin g power electronic components fabricated on a substrate made of gallium nitride (GaN) and micro-switches usin g electrostatic activation of [[the]] a MEMS (Micro Electro Mechanical System) type, wherein the powe r electronic components and the micro-switches are fabricated on a single substrate of gallium nitride and the method comprises: at least the following fabrieatio steps-. Step 1: Fa bieation-e f fabricating the power electronic components on the gallium nitride substrate; Ste p 2: Depo sit ion-ef de p ositing a ﬁrst common p assivation lay er on [[said]] the power electronic components and over the entire gallium nitride substrate; Step 3: Fabr -ication e f fabricating the micro-switches on [[said]] the gallium nitride substrate.
1. 2
  Dependent← claim 1GaNSiO₂Si₃N₄electronic module with power electronic components and MEMS micro-switches on GaN substrate
  The method of fab ri4eatien-o f fabricating an electronic module as elaimed -in of claim 1, wherein [[the]] step 2 is followed by a step 2b preceding [[the]] step 3, [[the]] step 2b eensisting -o f comprisin g the fer- mati en-of formin g a second passivation layer at [[the]] a location of the micro-switches. SVG 13696569.05-05-2014.HUUBPCJTPXXIFW3.CLM₁7348975.25.264.2509.2515.2660.svg 0.503 7.503 Drawing Black and white el aime d-in of claim 2, wherein [[the]] step 2b is followed by a step 2c preceding [[the]] step 3, [[the]] step 2c ee n sisti ng- in comprisin g locally eliminating the ﬁrst common passivatio n layer on 2 PATENT Atty D kt 95781.15740 Cust. No. 30734 top of [[the]] electrical interconnection regions of the powe r electronic components and in depositing a conductive layer on top of [[said]] the electrical interconnection regions.
2. 4
  Dependent← claim 1GaNelectronic module with power electronic components and MEMS micro-switches on GaN substrateMEMS micro-switch with suspended membrane
  The method of fab ri4atien-e f fabricatin g an electronic module as elaimed -in of claim 1, wherein [[the]] step 3 essentially eens ists in further co m prises depositing electrically conducting lugs at [[the]] locations of the micro-switches and in forming on top of [[said]] the electrically conducting lugs at least one suspended membrane, the Whole assembly eenstituting-said wherein the micro-switches constitute a whole assembly.
3. 5
  Dependent← claim 1SiO₂Si₃N₄
  5. The method of fab rie ati on-e f fabricating an electronic module as elaimed-in of claim 1, wherein the ﬁrst common passivation l aye rs-- are l a yer is made of silicon oxide (Si O 2) or o f silicon nitride (Si₃N₄).
6
IndependentGaNSiO₂Si₃N₄electronic module with power electronic components and MEMS micro-switches on GaN substrateMEMS micro-switch with suspended membraneHEMT transistor on GaN substrate
An electronic module comprising power electronic components fabricated on a substrate made of g allium nitride (GaN) usin g transistors of [[the] an "HEMT" (High Electron Mobility Transistor) type, wherein the power electronic components and the entire substrate except on top of electrical interconnection regions are covered by a passivation layer and [[that]] the electronic module also comprises, on the same gallium nitride substrate, micro-switches using electrostatic activation of [[the]] a MEMS type.
1. 7
  Dependent← claim 6electronic module with power electronic components and MEMS micro-switches on GaN substrate
  The electronic module as -elaimed-- in of claim 6, wherein the electronic module is a radiofrequency transmission-reception module. 3 PATENT Atty Dkt 95781.15740 C ust. No. 30734
9
Dependent← claim 3GaNelectronic module with power electronic components and MEMS micro-switches on GaN substrateMEMS micro-switch with suspended membrane
The method of fa bie ati en-o f fabricating an electronic module as elaime d- in of claim 3, wherein [[the]] step 3 essentially consists i further comprises depositing electrically conducting lugs at [[the]] locations of the micro-switches and in forming on top of [[said]] the electrically conducting lugs at least one suspended membrane, the whole assembly eensti tut ing-said wherein the micro-switches constitute a whole assembly.
11
Dependent← claim 3SiO₂Si₃N₄
The method of fab rie ati on-of fabricating an electronic module as elaimed -in of claim 3, wherein the passivation layers are made of silicon oxide (Si O 2) or of silicon nitride (Si₃N₄).

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

electronic module with power electronic components and MEMS micro-switches on GaN substrate

SiO₂passivation layer

GaNsubstrate

MEMS micro-switch with suspended membrane

suspended_membranesuspended membrane

SiO₂passivation layer

GaNsubstrate

Materials

Materials described outside the worked examples.

gallium nitride

GaN

Substrate

silicon oxide

SiO₂

Passivation Layer

Why these are connected

Related documents with shared materials, methods, properties, or citations.

METHOD FOR INTEGRATING MEMS MICROSWITCHES ON GaN SUBSTRATES COMPRISING ELECTRONIC POWER COMPONENTS | Matter42 Literature